激励射流在超声速流场中的混合特性研究

将Hartmann-Sprenger(H-S)管集成到传统射流装置中形成激励射流,研究其在超声速流场中的混合特性.设计了3种频率的C02激励射流,将其横向注入Ma=2.5的均匀超声速来流当中.采用平面激光散射技术对其进行瞬态可视化成像,利用组分采样进行时均分析,结果表明: H-S激励射流可以有效提高射流穿透深度,形成较多大尺度结构,从而获得较好的混合效果

在相对论性激光_等离子体系统中初始物理参数对激光脉冲的影响

基于相对论性激光-等离子体动力学理论,研究了相对论性激光-等离子体系统中圆偏振入射脉冲激光和等离子体相互作用对激光脉冲宽度的影响.具体分析了在不同初始物理参数下脉冲激光的脉冲宽度在等离子体传播过程中的变化情况,重点分析了激光脉冲在等离子中压缩.计算结果表明增加入射激光的强度和入射脉冲宽度以及减小等离子体的初始密度,能够有效地实现脉冲宽度在等离子体中压缩;当激光脉冲的初始参数a0=0·12和τ=70以及等离子体密度n0=0·3时,脉冲宽度相对压缩T/τ接近于1/10,从而给出了激光压缩的理论优化参数.

高精度直流电源远程控制器的设计

高精度电源远程控制器的功能是实现对高精度、高稳定直流稳流/稳压电源的远程控制。介绍了基于AT89C51的电源远程控制器的设计,给出了硬件框图和主要电路。该控制器性能可靠,已在实际中应用。

重离子~(12)C~(6+)对~(60)Coγ射线诱发淋巴细胞微核效应的比较研究

目的　比较重离子束1 2 C6+对60 Coγ射线照射人离体血诱发淋巴细胞微核的效应。方法　用60 Coγ射线和地面加速器产生的重离子1 2 C6+(平均LET为 36 70keV μm) ,不同剂量照射离体人血 ,用CB微核法观察双核淋巴细胞的微核 ,计算重离子束1 2 C6+对60 Coγ射线的相对生物效能。结果　在 0～ 6Gy剂量范围内 ,重离子束1 2 C6+对60 Coγ射线的相对生物效能在 4 1 9～ 1 78之间 ,平均为 2 56。结论　重离子束1 2 C6+比60 Coγ射线有更高的生物效应

重离子束~(12)C~(6+)照射人离体血建立淋巴细胞微核的剂量-效应曲线

目的　研究建立重离子束1 2 C6 + 照射人离体血诱发淋巴细胞微核的剂量 效应曲线。方法　用地面加速器产生的重离子1 2 C6 + (平均LET为 36 70keV μm) ,不同吸收剂量、不同吸收剂量率照射离体人血 ,用CB微核法观察双核淋巴细胞中的微核。结果　在 0～ 6Gy吸收剂量范围内 ,淋巴细胞微核率随吸收剂量的增加而增加 ,拟合的最佳方程为Y =6 6 5 0 9×D0 .85。结论　1 2 C6 + 照射人离体血诱发淋巴细胞微核在 0～ 6Gy吸收剂量范围内呈幂函数关系。

多路高压电源带载测试仪

介绍了一种多路高压测试系统 ,并简要介绍了电路结构和电路设计、工作原理和技术指标。该仪器主要用于实验室和野外直流单路高压和多路高压系统电压值的测试 ,特别是对探测器偏压的测试。该仪器可以测量的额定电压最大值为 6k V,电流值为 0 .1～ 10 m A。仪器结构简单、集成度高、交直流供电、体积小、携带方便

Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation

Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.

Modification of ZnO films under high energy Xe-ion irradiations

ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Modification of Fe/Cu multilayers under 400 keV Xe20+ irradiation

Two kinds of Fe/Cu multilayers with different modulation wavelength were deposited on cleaved Si(100) substrates and then irradiated at room temperature using 400 keV Xe20+ in a wide range of irradiation fluences. As a comparison, thermal annealing at 300-900 degrees C was also carried out in vacuum. Then the samples were analyzed by XRD and the evolution of crystallite structures induced by irradiation was investigated. The obtained XRD patterns showed that, with increase of the irradiation fluence, the peaks of Fe became weaker, the peaks related to Cu-based fcc solid solution and Fe-based bcc solid solution phase became visible and the former became strong gradually. This implied that the intermixing at the Fe/Cu interface induced by ion irradiation resulted in the formation of the new phases which could not be achieved by thermal annealing. The possible intermixing mechanism of Fe/Cu multilayers induced by energetic ion irradiation was briefly discussed.