Effect of surface roughness on rarefied-gas heat transfer in microbearings

In this Letter, the rarefaction and roughness effects on the heat transfer process in gas microbearings are investigated. A heat transfer model is developed by introducing two-variable Weierstrass-Mandelbrot (W-M) function with fractal geometry. The heat transfer problem in the multiscale self-affine rough microbearings at slip flow regime is analyzed and discussed. The results show that rarefaction has more significant effect on heat transfer in rough microbearings with lower fractal dimension. The negative influence of roughness on heat transfer found to be the Nusselt number reduction. The heat transfer performance can be optimized with increasing fractal dimension of the rough surface. © 2012 Elsevier B.V. All rights reserved.

Intrinsic state lifetimes in Pd103 and Cd106,107

The mean-lifetimes, τ, of various medium-spin excited states in Pd103 and Cd106,107 have been deduced using the Recoil Distance Doppler Shift technique and the Differential Decay Curve Method. In Cd106, the mean-lifetimes of the Iπ=12+ state at Ex=5418 keV and the Iπ=11- state at Ex=4324 keV have been deduced as 11.4(17)ps and 8.2(7)ps, respectively. The associated β2 deformation within the axially-symmetric deformed rotor model for these states are 0.14(1) and 0.14(1), respectively. The β2 deformation of 0.14(1) for the Iπ=12+ state in Cd106 compares with a predicted β2 value from total Routhian surface (TRS) calculations of 0.17. In addition, the mean-lifetimes of the yrast Iπ=152- states in Pd103 (at Ex=1262 keV) and Cd107 (at Ex=1360 keV) have been deduced to be 31.2(44)ps and 31.4(17)ps, respectively, corresponding to β2 values of 0.16(1) and 0.12(1) assuming axial symmetry. Agreement with TRS calculations are good for Pd103 but deviate for that predicted for Cd107. © 2007 The American Physical Society.

Development of accurate, robust liquid equations of state for multi-phase CFD simulations with a modified AUSM+-up scheme

Eight equations of state (EOS) have been evaluated for the simulation of compressible liquid water properties, based on empirical correlations, the principle of corresponding states and thermodynamic relations. The IAPWS-IF97 EOS for water was employed as the reference case. These EOSs were coupled to a modified AUSM+-up convective flux solver to determine flow profiles for three test cases of differing flow conditions. The impact of the non-viscous interaction term discretisation scheme, interfacial pressure method and selection of low-Mach number diffusion were also compared. It was shown that a consistent discretisation scheme using the AUSM+-up solver for both the convective flux and the non-viscous interfacial term demonstrated both robustness and accuracy whilst facilitating a computationally cheaper solution than discretisation of the interfacial term independently by a central scheme. The simple empirical correlations gave excellent results in comparison to the reference IAPWS-IF97 EOS and were recommended for developmental work involving water as a cheaper and more accurate EOS than the more commonly used stiffened-gas model. The correlations based on the principles of corresponding-states and the modified Peng-Robinson cubic EOS also demonstrated a high degree of accuracy, which is promising for future work with generic fluids. Further work will encompass extension of the solver to multiple dimensions and to account for other source terms such as surface tension, along with the incorporation of phase changes. © 2013.

Wave propagation under vertically excited surface foundation

Recently developed equipment allows measurement of the shear modulus of soil in situ as a function of level of strain. In these field experiments, the excitation is applied on the ground surface using large scale shakers, and the response of the soil deposit is recorded through embedded receivers. The focus of this paper is on the simulation of signals which would be recorded at the receiver locations in idealized conditions to provide guidelines on the interpretation of field measurements. Discrete and finite element methods are employed to model one dimensional and three dimensional geometries, respectively, under various lateral boundary conditions. When the first times of arrival are detected by receivers under the vertical impulse, they coincide with the arrival of the P wave, related to the constrained modulus of the material, regardless of lateral boundary conditions. If one considers, on the other hand, phase differences between the motions at two receivers the picture is far more complicated and one would obtain propagation velocities, function of frequency and depth, which do not correspond to either the constrained modulus or Young's modulus. It is thus necessary to apply some care when interpreting the data from field tests based on vertical steady state vibrations. The use of inverse analysis can be considered as a way of extracting the shear modulus of soil from the field test measurements. © 2008 ASCE.

Optimizing the energy offset between dye and hole-transporting material in solid-state dye-sensitized solar cells

The power-conversion efficiency of solid-state dye-sensitized solar cells can be optimized by reducing the energy offset between the highest occupied molecular orbital (HOMO) levels of dye and hole-transporting material (HTM) to minimize the loss-in-potential. Here, we report a study of three novel HTMs with HOMO levels slightly above and below the one of the commonly used HTM 2,2′,7,7′- tetrakis(N,N-di-p-methoxyphenylamino)-9,9′- spirobifluorene (spiro-OMeTAD) to systematically explore this possibility. Using transient absorption spectroscopy and employing the ruthenium based dye Z907 as sensitizer, it is shown that, despite one new HTM showing a 100% hole-transfer yield, all devices based on the new HTMs performed worse than those incorporating spiro-OMeTAD. We further demonstrate that the design of the HTM has an additional impact on the electronic density of states present at the TiO2 electrode surface and hence influences not only hole- but also electron-transfer from the sensitizer. These results provide insight into the complex influence of the HTM on charge transfer and provide guidance for the molecular design of new materials. © 2013 American Chemical Society.

Free energy surface reconstruction from umbrella samples using Gaussian process regression

We demonstrate how the Gaussian process regression approach can be used to efficiently reconstruct free energy surfaces from umbrella sampling simulations. By making a prior assumption of smoothness and taking account of the sampling noise in a consistent fashion, we achieve a significant improvement in accuracy over the state of the art in two or more dimensions or, equivalently, a significant cost reduction to obtain the free energy surface within a prescribed tolerance in both regimes of spatially sparse data and short sampling trajectories. Stemming from its Bayesian interpretation the method provides meaningful error bars without significant additional computation. A software implementation is made available on www.libatoms.org.

On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

Gallium nitride (GaN) has a bright future in high voltage device owing to its remarkable physical properties and the possibility of growing heterostructures on silicon substrates. GaN High Electron Mobility Transistors (HEMTs) are expected to make a strong impact in off line applications and LED drives. However, unlike in silicon-based power devices, the on-state resistance of HEMT devices is hugely influenced by donor and acceptor traps at interfaces and in the bulk. This study focuses on the influence of donor traps located at the top interface between the semiconductor layer and the silicon nitride on the 2DEG density. It is shown through TCAD simulations and analytical study that the 2DEG charge density has an 'S' shape variation with two distinctive 'flat' regions, wherein it is not affected by the donor concentration, and one linear region. wherein the channel density increases proportionally with the donor concentration. We also show that the upper threshold value of the donor concentration within this 'S' shape increases significantly with the AIGaN thickness and the Al mole fraction and is highly affected by the presence of a thin GaN cap layer. © 2013 IEEE.

Dependence of dye regeneration and charge collection on the pore-filling fraction in solid-state dye-sensitized solar cells

Solid-state dye-sensitized solar cells rely on effective infiltration of a solid-state hole-transporting material into the pores of a nanoporous TiO 2 network to allow for dye regeneration and hole extraction. Using microsecond transient absorption spectroscopy and femtosecond photoluminescence upconversion spectroscopy, the hole-transfer yield from the dye to the hole-transporting material 2,2′,7,7′-tetrakis(N,N-di-p- methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) is shown to rise rapidly with higher pore-filling fractions as the dye-coated pore surface is increasingly covered with hole-transporting material. Once a pore-filling fraction of ≈30% is reached, further increases do not significantly change the hole-transfer yield. Using simple models of infiltration of spiro-OMeTAD into the TiO2 porous network, it is shown that this pore-filling fraction is less than the amount required to cover the dye surface with at least a single layer of hole-transporting material, suggesting that charge diffusion through the dye monolayer network precedes transfer to the hole-transporting material. Comparison of these results with device parameters shows that improvements of the power-conversion efficiency beyond ≈30% pore filling are not caused by a higher hole-transfer yield, but by a higher charge-collection efficiency, which is found to occur in steps. The observed sharp onsets in photocurrent and power-conversion efficiencies with increasing pore-filling fraction correlate well with percolation theory, predicting the points of cohesive pathway formation in successive spiro-OMeTAD layers adhered to the pore walls. From percolation theory it is predicted that, for standard mesoporous TiO2 with 20 nm pore size, the photocurrent should show no further improvement beyond an ≈83% pore-filling fraction. Solid-state dye-sensitized solar cells capable of complete hole transfer with pore-filling fractions as low as ∼30% are demonstrated. Improvements of device efficiencies beyond ∼30% are explained by a stepwise increase in charge-collection efficiency in agreement with percolation theory. Furthermore, it is predicted that, for a 20 nm pore size, the photocurrent reaches a maximum at ∼83% pore-filling fraction. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stable carbon isotope variations in surface bloom scum and subsurface seston among shallow eutrophic lakes

Carbon stable isotope analysis of surface bloom scum and subsurface seston samples was conducted in shallow eutrophic lakes in China during warm seasons from 2003 to 2004. delta C-13 values of bloom scum were always higher (averaged 5 parts per thousand) than those of seston in this study, and the possible reasons were attributed to (i) direct use of atmospheric CO2 at the air-water interface, (ii) decrease in C-13 fractionation due to higher carbon fixation, (iii) active CO2 transport, and/or (iv) HCO3 accumulation. Negative correlation between delta C-13(scum) - delta C-13(seston) and pH in the test lakes indicated that phytoplankton at the subsurface water column increased isotopic enrichment under the-carbon limitation along with the increase of pH, which might in turn decreased the differences in 313 C between the subsurface seston and the surface scums. Significant positive correlations of seston 8 13C with total concentrations of nitrogen and phosphorus in water column suggested that the increase in delta C-13 of seston with trophic state was depending on nutrient (N or P, or both) supply. Our study showed that delta C-13 of phytoplankton was indicative of carbon utilization, primary productivity, and nutrient supply among the eutrophic lakes. (C) 2007 Elsevier B.V All rights reserved.

Exogenous carbon acquisition of photosynthesis in Porphyra haitanensis (Bangiales, Rhodophyta) under emersed state

The photosynthetic performances of Porphyra haitanensis thalli were investigated in order to understand its mechanisms for exogenous carbon acquisition during emersion at low tide. The emersed photosynthesis was studied by altering the pH value in the water film on the thalli surface, treating them with carbonic anhydarase inhibitors (acetazolamide and 6-ethoxyzolamide), adjusting the CO2 concentrations in the air, and comparing the theoretical maximum CO2 supply rates within the adherent water film with the observed photosynthetic CO2 uptake rates. It was found that the principal exogenous inorganic carbon source for the photosynthesis of P. haitanensis during emersion was atmospheric CO2. The driving force of CO2 flux across the water film was the CO2 concentration gradient within it. Carbonic anhydrase accelerated both extracellular and intracellular CO2 transport. The emersed photosynthesis of P. haitanensis was limited by the present atmospheric CO2 level, and would be enhanced by atmospheric CO2 rise that would trigger global warming.

Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface

Fe films with the different thicknesses were grown on c(4x4) reconstructed GaAs (001) surfaces at low temperature by molecular-beam epitaxy. Well-ordered bcc structural Fe epitaxial films are confirmed by x-ray diffraction patterns and high-resolution cross-sectional transmission electron microscopy images. A large lattice expansion perpendicular to the surface in Fe film is observed. In-plane uniaxial magnetic anisotropy is determined by the difference between magnetizing energy along [110] and [110] directions, and the constant of interfacial uniaxial magnetic anisotropy is calculated to be 1.02x10(-4) J m(-2). We also find that magnetic anisotropy is not obviously influenced after in situ annealing, but in-plane strain is completely changed.

Observation of the surface circular photogalvanic effect in InN films

A sizable spin-dependent photocurrent related to the interband transition in InN films is observed. The surface charge accumulation layer is suggested to be the origin of the circular photogalvanic current, which is consistent with the result of uniaxial strain experiments and the comparison of front and back incidence. The homogeneous photocurrent demonstrates the existence of spin splitting in the InN surface layer, and the structure inversion asymmetry (SIA)-dominant mechanism indicates a great possibility for the manipulation of spin splitting, which would undoubtedly benefit further research and applications of spintronics. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density

Variable-temperature photoluminescence (PL) spectra of Si-doped self-assembled InGaAs quantum dots (QDs) with and without GaAs cap layers were measured. Narrow and strong emission peak at 1075 nm and broad and weak peak at 1310 nm were observed for the buried and surface QDs at low temperature, respectively. As large as 210 meV redshift of the PL peak of the surface QDs with respect to that of the buried QDs is mainly due to the change of the strain around QDs before and after growth of the GaAs cap layer. Using the developed localized-state luminescence model, we quantitatively calculate the temperature dependence of PL peaks and integrated intensities of the two samples. The results reveal that there exists a large difference in microscopic mechanisms of PL thermal quenching between two samples. (c) 2005 American Institute of Physics.

Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface

National Natural Science Foundation of China 60836002 10674130 60521001;Major State Basic Research of China 2007CB924903;Chinese Academy of Sciences KJCX2.YW.W09-1

Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process

Surface micro-roughness, surface chemical properties, and surface wettability are three important aspects of wafer surfaces during a wafer cleaning process, which determine the bonding quality of ordinary direct wafer bonding. In this study, InP wafers are divided into four groups and treated by different chemical processes. Subsequently, the characteristics of the treated InP surfaces are carefully studied by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle measurements. The optimal wafer treatment method for wafer bonding is determined by comparing the results of the processes as a whole. This optimization is later evaluated by a scanning electronic microscope (SEM), and the ridge waveguide 1.55 mu m Si-based InP/InGaAsP multi-quantum-well laser chips are also fabricated. (c) 2005 Elsevier B.V. All rights reserved.