Combined single-pass conversion of methane via oxidative coupling and dehydroaromatization

A new reaction mode, i.e., the combined single-pass conversion of methane via oxidative coupling (OCM) over mixed metal oxide (SLC) catalysts and dehydroaromatization (MDA) over Mo/HZSM-5 catalysts, is reported. With the assistance of an OCM reaction over SLC catalysts in the top layer of the reactor, the deactivation resistance of Mo/HZSM-5 catalysts is remarkably enhanced. Under the selected reaction conditions, the CH(4) conversion decreased from similar to18 to similar to1% and the aromatics yield decreased from 12.8 to 0.1%, respectively, after running the reaction for 960 min on both 6Mo/HZSM-5 and SLC-6Mo/HZSM-5 catalyst system without O(2) in the feed. On the other hand, for the SLC-6Mo/HZSM-5 catalyst system with O(2) in the feed, the deactivation was improved greatly, and after 960 min onstream the CH(4) conversion and aromatics yield were still as high as 12.0 and 8.0%, respectively. The promotion effect mainly appears to be associated with in situ formation of CO(2) in the OCM layer, which reacts with coke via the reverse Boudouard reaction.

p-p isotype organic heterojunction and ambipolar field-effect transistors

We realized ambipolar transport behavior in field-effect transistors by using p-p isotype heterojunction films as active layers, which consisted of two p-type semiconductor materials, 2, 2'; 7', 2 ''-terphenanthrenyl (Ph3) and vanadyl-phthalocyanine (VOPc). The ambipolar charge transport was attributed to the interfacial electronic structure of Ph3-VOPc isotype heterojunction, and electrons and holes were accumulated at both sides of the narrow band-gap VOPc and the wide band-gap Ph3, respectively, which were confirmed by the capacitance-voltage relationship of metal-oxide-semiconductor diodes. The accumulation thickness of carriers was also obtained by changing the heterojunction active layer thickness. Furthermore, the results indicate that the device performance is relative to interfacial electronic structures.

Polyaniline for corrosion prevention of mild steel coupled with copper

Polyaniline emeraldine base/epoxy resin (EB/ER) coating was investigated for corrosion protection of mild steel coupled with copper in 3.5% NaCl solution. EB/ER coating with 5-10 wt% EB had long-term corrosion resistance on both uncoupled steel and copper due to the passivation effect of EB on the metal surfaces. During the 150 immersion days, the impedance at 0.1 Hz for the coating increased in the first 1-40 days and subsequently remained constant above 10(9) Omega cm(2), whereas that for pure ER coating fell below 10(6) Omega cm(2) after only 30 or 40 days. Immersion tests on coated steel-copper galvanic couple showed that EB/ER coating offered 100 times more protection than ER coating against steel dissolution and coating delamination on copper, which was mainly attributed to the passive metal oxide films formed by EB blocking both the anodic and cathodic reactions. Salt spray tests showed that 100 mu m EB/ER coating protected steel-copper couple for at least 2000 h.

稀土离子对甲醇电氧化的影响

直接甲醇燃料电池(DMFC)是以固体聚合物为电解质,阳极以液相甲醇或蒸气相甲醇进料,阴极以空气或氧气为氧化剂.DMFC具有原料甲醇易储存、电池的理论电压高和能量效率高等特点,适于作电动车电源和便携式电源,具有广阔的发展前景.然而,在DMFC中,甲醇的阳极氧化涉及6个电子的传递过程,比氢气的氧化更困难,由于存在较高的阳极过电位,使得电池的实际输出电压低于理论电压;更为重要的是甲醇的部分氧化中间产物(CO)易使电催化剂中毒,因此,高效的阳极电催化剂一直是DMFC中的重要研究领域之一[1~7].目前解决这一问题的途径主要集中在对电催化剂的研究和改进上,如性能较好的Pt/Metal(oxide),即Pt复合金属或金属氧化物催化剂.稀土元素Ln系位于元素周期表中的B族,具有丰富的d轨道和f轨道电子,因此可以作为催化剂中的第二种金属元素加以研究.将稀土元素及其氧化物用于较低温度(250℃)下催化CO的化学氧化反应已早有研究[8].目前,已经有将Rh/Sm和Pt/Sm合金应用于CO的催化氧化反应的研究报道[9].本文选择几种稀土离子作为添加剂,研究了稀土离子对甲醇电氧化反应的影响.1实验部分1.1试剂与仪器甲醇(优级纯),...

Ambipolar organic field-effect transistors with air stability, high mobility, and balanced transport

Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm(2)/V s for the holes and 0.036 cm(2)/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.

Magnetic microsphere and its use in biochemical separation and analysis

Magnetic microsphere comprises a magnetically responsive metal or metal oxide core surrounded by a polymer shell with active groups. Nowadays, methods of directly coating polymer, monomer polymerazation, impregnation, extrusion and biological synthesis are generally used to prepare magnetic particles. This kind of superparamagnetic microspheres can be attached to chemical, biochemical and biological substances by their active groups, then applying a magnetic field to separate from the media. Preparation and utilization of magnetic microspheres in immunoassay, nucleic acid hybrization assay, gene sequencing, cell isolation, enzyme immoblization, receptor isolation and other Gelds are reviewed with 44 references in this paper. Also, the further development is outlooked.

Preparation of titania-based catalysts for formaldehyde photocatalytic oxidation from TiCl4 by the sol-gel method

Titania sols were prepared by acid hydrolysis of a TiCl4 precursor instead of titanium alkoxides. The effect of acid concentration on the particle size and stability of sol was investigated. Stable titania sols with mean particle size of 14 nm could be obtained when the H+/Ti molar ratio was 0.5. The titania sols were modified with Pt, SiO2, ZrO2, WO3 and MoO3 to prepare a series of modified catalysts, which were used for the photocatalytic oxidation of formaldehyde at 37 degreesC. They showed different photocatalytic activities due to the influence of the additives. Comparing with pure TiO2, the addition of silica or zirconia increased the photocatalytic activity, while the addition of Pt and MoO3 decreased the activity, and the addition Of WO3 had little effect on the activity. It is of great significance that the conversion of formaldehyde was increased up to 94% over the SiO2-TiO2 catalyst. The increased activity was partly due to higher surface area and porosity or smaller crystallite size. A comparison of our catalyst compositions with the literature in this field suggested that the difference in activity due to the addition of a second metal oxide maybe caused by the surface chemistry of the catalysts, particularly the acidity. (C) 2001 Elsevier Science B.V. All rights reserved.

Surface structure and reaction performances of highly dispersed and supported bimetallic catalysts

Surface structures of Pt-Sn and Pt-Fe bimetallic catalysts have been investigated by means of Mossbauer spectroscopy, Pt-L-III -edge EXAFS and H-2-adsorption. The results showed that the second component, such as Sn or Fe, remained in the oxidative state and dispersed on the gamma-Al2O3 surface after reduction, while Pt was completely reduced to the metallic state and dispersed on either the metal oxide surface or the gamma-Al2O3 surface. By correlating the distribution of Pt species on different surfaces with the reaction and adsorption performances, it is proposed that two kinds of active Pt species existed on the surfaces of both catalysts, named M-1 sites and M-2 sites. M-1 sites are the sites in which Pr directly anchored on the gamma-Al2O3 surface, while M-2 sites are those in which Pt anchored on the metal oxide surface. M-1 sites are favorable for low temperature H-2 adsorption, and responsible for the hydrogenolysis reaction and carbon deposition, while M-2 sites which adsorb more H-2 at higher temperature, are more resistant to the deactivation due to less carbon deposition, and provide major contribution to the dehydrogenation reaction.

Block copolymer self-assembly based device structures

This thesis investigated the block copolymer (BCP) thin film characteristics and pattern formation using a set of predetermined molecular weights of PS-b-PMMA and PS-b-PDMS. Post BCP pattern fabrication on the required base substrate a dry plasma etch process was utilised for successful pattern transfer of the BCP resist onto underlying substrate. The resultant sub-10 nm device features were used in front end of line (FEoL) fabrication of active device components in integrated circuits (IC). The potential use of BCP templates were further extended to metal and metal-oxide nanowire fabrication. These nanowires were further investigated in real-time applications as novel sensors and supercapacitors.

Low power predictable memory and processing architectures

Great demand in power optimized devices shows promising economic potential and draws lots of attention in industry and research area. Due to the continuously shrinking CMOS process, not only dynamic power but also static power has emerged as a big concern in power reduction. Other than power optimization, average-case power estimation is quite significant for power budget allocation but also challenging in terms of time and effort. In this thesis, we will introduce a methodology to support modular quantitative analysis in order to estimate average power of circuits, on the basis of two concepts named Random Bag Preserving and Linear Compositionality. It can shorten simulation time and sustain high accuracy, resulting in increasing the feasibility of power estimation of big systems. For power saving, firstly, we take advantages of the low power characteristic of adiabatic logic and asynchronous logic to achieve ultra-low dynamic and static power. We will propose two memory cells, which could run in adiabatic and non-adiabatic mode. About 90% dynamic power can be saved in adiabatic mode when compared to other up-to-date designs. About 90% leakage power is saved. Secondly, a novel logic, named Asynchronous Charge Sharing Logic (ACSL), will be introduced. The realization of completion detection is simplified considerably. Not just the power reduction improvement, ACSL brings another promising feature in average power estimation called data-independency where this characteristic would make power estimation effortless and be meaningful for modular quantitative average case analysis. Finally, a new asynchronous Arithmetic Logic Unit (ALU) with a ripple carry adder implemented using the logically reversible/bidirectional characteristic exhibiting ultra-low power dissipation with sub-threshold region operating point will be presented. The proposed adder is able to operate multi-functionally.

Reactivity of sub 1 nm supported clusters: (TiO2)(n) clusters supported on rutile TiO2 (110)

Metal oxide clusters of sub-nm dimensions dispersed on a metal oxide support are an important class of catalytic materials for a number of key chemical reactions, showing enhanced reactivity over the corresponding bulk oxide. In this paper we present the results of a density functional theory study of small sub-nm TiO2 clusters, Ti2O4, Ti3O6 and Ti4O8 supported on the rutile (110) surface. We find that all three clusters adsorb strongly with adsorption energies ranging from -3 eV to -4.5 eV. The more stable adsorption structures show a larger number of new Ti-O bonds formed between the cluster and the surface. These new bonds increase the coordination of cluster Ti and O as well as surface oxygen, so that each has more neighbours. The electronic structure shows that the top of the valence band is made up of cluster derived states, while the conduction band is made up of Ti 3d states from the surface, resulting in a reduction of the effective band gap and spatial separation of electrons and holes after photon absorption, which shows their potential utility in photocatalysis. To examine reactivity, we study the formation of oxygen vacancies in the cluster-support system. The most stable oxygen vacancy sites on the cluster show formation energies that are significantly lower than in bulk TiO2, demonstrating the usefulness of this composite system for redox catalysis.

Atomic layer deposition of interface control layers for the fabrication of III/V MOS devices

The continued advancement of metal oxide semiconductor field effect transistor (MOSFET) technology has shifted the focus from Si/SiO2 transistors towards high-κ/III-V transistors for high performance, faster devices. This has been necessary due to the limitations associated with the scaling of the SiO2 thickness below ~1 nm and the associated increased leakage current due to direct electron tunnelling through the gate oxide. The use of these materials exhibiting lower effective charge carrier mass in conjunction with the use of a high-κ gate oxide allows for the continuation of device scaling and increases in the associated MOSFET device performance. The high-κ/III-V interface is a critical challenge to the integration of high-κ dielectrics on III-V channels. The interfacial chemistry of the high-κ/III-V system is more complex than Si, due to the nature of the multitude of potential native oxide chemistries at the surface with the resultant interfacial layer showing poor electrical insulating properties when high-κ dielectrics are deposited directly on these oxides. It is necessary to ensure that a good quality interface is formed in order to reduce leakage and interface state defect density to maximise channel mobility and reduce variability and power dissipation. In this work, the ALD growth of aluminium oxide (Al2O3) and hafnium oxide (HfO2) after various surface pre-treatments was carried out, with the aim of improving the high-κ/III-V interface by reducing the Dit – the density of interface defects caused by imperfections such as dangling bonds, dimers and other unsatisfied bonds at the interfaces of materials. A brief investigation was performed into the structural and electrical properties of Al2O3 films deposited on In0.53Ga0.47As at 200 and 300oC via a novel amidinate precursor. Samples were determined to experience a severe nucleation delay when deposited directly on native oxides, leading to diminished functionality as a gate insulator due to largely reduced growth per cycle. Aluminium oxide MOS capacitors were prepared by ALD and the electrical characteristics of GaAs, In0.53Ga0.47As and InP capacitors which had been exposed to pre-pulse treatments from triethyl gallium and trimethyl indium were examined, to determine if self-cleaning reactions similar to those of trimethyl aluminium occur for other alkyl precursors. An improved C-V characteristic was observed for GaAs devices indicating an improved interface possibly indicating an improvement of the surface upon pre-pulsing with TEG, conversely degraded electrical characteristics observed for In0.53Ga0.47As and InP MOS devices after pre-treatment with triethyl gallium and trimethyl indium respectively. The electrical characteristics of Al2O3/In0.53Ga0.47As MOS capacitors after in-situ H2/Ar plasma treatment or in-situ ammonium sulphide passivation were investigated and estimates of interface Dit calculated. The use of plasma reduced the amount of interface defects as evidenced in the improved C-V characteristics. Samples treated with ammonium sulphide in the ALD chamber were found to display no significant improvement of the high-κ/III-V interface. HfO2 MOS capacitors were fabricated using two different precursors comparing the industry standard hafnium chloride process with deposition from amide precursors incorporating a ~1nm interface control layer of aluminium oxide and the structural and electrical properties investigated. Capacitors furnished from the chloride process exhibited lower hysteresis and improved C-V characteristics as compared to that of hafnium dioxide grown from an amide precursor, an indication that no etching of the film takes place using the chloride precursor in conjunction with a 1nm interlayer. Optimisation of the amide process was carried out and scaled samples electrically characterised in order to determine if reduced bilayer structures display improved electrical characteristics. Samples were determined to exhibit good electrical characteristics with a low midgap Dit indicative of an unpinned Fermi level