941 resultados para Technological physics


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In this review we describe current scientific and technological issues in the quest to reduce aeroengine noise, in the face of predicted rapid increases in the volume of air traffic, on the one hand, and increasingly strict environmental regulation, on the other. Alongside conventional ducted turbofan designs, new open-rotor contra-rotating power plants are currently under development, which present their own noise challenges. The key sources of tonal and broadband noise, and the way in which noise propagates away from the source, are surveyed in both cases. We also consider in detail two key aspects underpinning the flow physics that continue to receive considerable attention, namely the acoustics of swirling flow and unsteady flow-blade interactions. Finally, we describe possible innovations in open-rotor engine design for low noise.

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This paper describes a fundamental experimental study of the flow structure around a single three-dimensional (3D) transonic shock control bump (SCB) mounted on a flat surface in a wind tunnel. Tests have been carried out with a Mach 1.3 normal shock wave located at a number of streamwise positions relative to the SCB. Details of the flow have been studied using the experimental techniques of schlieren photography, surface oil flow visualization, pressure sensitive paint, and laser Doppler anemometry. The results of the work build on the findings of previous researchers and shed new light on the flow physics of 3D SCBs. It is found that spanwise pressure gradients across the SCB ramp and the shape of the SCB sides affect the magnitude and uniformity of flow turning generated by the bump, which can impact on the spanwise propagation of the quasi-two-dimensional (2D) shock structure produced by a 3DSCB. At the bump crest, vortices can form if the pressure on the crest is significantly lower than at either side of the bump. The trajectories of these vortices, which are relatively weak, are strongly influenced by any spanwise pressure gradients across the bump tail. Asignificant difference between 2D and 3D SCBs highlighted by the study is the impact of spanwise pressure gradients on 3D SCB performance. The magnitude of these spanwise pressure gradients is determined largely by SCB geometry and shock position. Copyright © 2011 by the American Institute of Aeronautics and Astronautics, Inc.

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The book contains invited lectures and selected contributions presented at the Enzo Levi and XVII Annual Meeting of the Fluid Dynamic Division of the Mexican Physical Society in 2011.

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The unique response of ferroic materials to external excitations facilitates them for diverse technologies, such as nonvolatile memory devices. The primary driving force behind this response is encoded in domain switching. In bulk ferroics, domains switch in a two-step process: nucleation and growth. For ferroelectrics, this can be explained by the Kolmogorov-Avrami-Ishibashi (KAI) model. Nevertheless, it is unclear whether domains remain correlated in finite geometries, as required by the KAI model. Moreover, although ferroelastic domains exist in many ferroelectrics, experimental limitations have hindered the study of their switching mechanisms. This uncertainty limits our understanding of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from reaching their full technological potential. Here we used piezoresponse force microscopy to study the switching mechanisms of ferroelectric-ferroelastic domains in thin polycrystalline Pb 0.7Zr0.3TiO3 films at the nanometer scale. We have found that switched biferroic domains can nucleate at multiple sites with a coherence length that may span several grains, and that nucleators merge to form mesoscale domains, in a manner consistent with that expected from the KAI model. © 2012 American Physical Society.

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This paper presents the steps and the challenges for implementing analytical, physics-based models for the insulated gate bipolar transistor (IGBT) and the PIN diode in hardware and more specifically in field programmable gate arrays (FPGAs). The models can be utilised in hardware co-simulation of complex power electronic converters and entire power systems in order to reduce the simulation time without compromising the accuracy of results. Such a co-simulation allows reliable prediction of the system's performance as well as accurate investigation of the power devices' behaviour during operation. Ultimately, this will allow application-specific optimisation of the devices' structure, circuit topologies as well as enhancement of the control and/or protection schemes.

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An experimental study on normal hole bleed in a supersonic turbulent boundary layer has been conducted. A combination of LDV, Schlieren imagery and oil flow visualization were used to provide a better understanding of the three-dimensional flow field surrounding a supersonic bleed array. Experiments were performed at Mach numbers of 1.8 and 2.5, while previously published results at Mach numbers of 1.3 and 1.5 were also incorporated. The bleed system was capable of removing up to approximately 10% of the incoming boundary layer through a tunnel-spanning array of discrete holes with diameters the same order of magnitude of boundary layer displacement thickness. Inspection of boundary layer profiles downstream of the bleed region indicates that vorticity generated by the discrete holes can have a substantial influence on changes to the boundary layer shape factor and skin friction coefficient, through modification of the lower 20% of the boundary layer. This vorticity was visualized through oil-flow visualization, and LDV measurements, showing the development of two vortices off each bleed hole, and corresponding upwash and downwash regions with far-reaching three dimensional effects. © 2013 by J. M. Oorebeek and H. Babinsky.

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This paper defines flipped learning and then examines its practical implementation in AS and A2 level physics classes, that is, classes for 16-18 year olds. The effect of this teaching style on student learning behaviour and its impact on test results are evaluated. The paper recounts the difficulties of implementing it and evaluates student preferences. It concludes with comments about this teaching style's appropriateness for various groups of students and identifies those for whom it is not suitable. A list of useful websites is included. © 2013 IOP Publishing Ltd.

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Most research on technology roadmapping has focused on its practical applications and the development of methods to enhance its operational process. Thus, despite a demand for well-supported, systematic information, little attention has been paid to how/which information can be utilised in technology roadmapping. Therefore, this paper aims at proposing a methodology to structure technological information in order to facilitate the process. To this end, eight methods are suggested to provide useful information for technology roadmapping: summary, information extraction, clustering, mapping, navigation, linking, indicators and comparison. This research identifies the characteristics of significant data that can potentially be used in roadmapping, and presents an approach to extracting important information from such raw data through various data mining techniques including text mining, multi-dimensional scaling and K-means clustering. In addition, this paper explains how this approach can be applied in each step of roadmapping. The proposed approach is applied to develop a roadmap of radio-frequency identification (RFID) technology to illustrate the process practically. © 2013 © 2013 Taylor & Francis.

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We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

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We present the fabrication of 1.3 mu m waveband p-doped InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with an extremely simple process. The continuous-wave saturated output power of 1.1 mW with a lasing wavelength of 1280 nm is obtained at room temperature. The high-speed modulation characteristics of p-doped QD VCSELs of two different oxide aperture sizes are investigated and compared. The maximum 3 dB modulation bandwidth of 2.5 GHz can be achieved at a bias current of 7 mA for a p-doped QD VCSEL with an oxide aperture size of 10 mu m in the small signal frequency response measurements. The crucial factors for the 3 dB bandwidth limitation are discussed according to the parameters' extraction from frequency response.