Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties

Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combining the emission from the rare-earth doped transparent oxide (Eu3+-doped SnO2 presents very efficient red emission) with a high mobility semiconductor. The advantage of this structure is the possibility of separation of the rare-earth emission centers from the electron scattering, leading to a strongly indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films, and the monochromatic light irradiation (266 nm) at low temperature of the heterojunction GaAs/SnO2:Eu leads to intense conductivity increase. Scanning electron microscopy (SEM) of the heterojunction cross section shows high adherence and good morphological quality of the interfaces substrate/SnO2 and SnO2/GaAs, even though the atomic force microscopy (AFM) image of the GaAs surface shows disordered particles, which increases with sample thickness. On the other hand, the good morphology of the SnO2:Eu surface, shown by AFM, assures the good electrical performance of the heterojunction. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels at the semiconductors interface, which may exhibit two-dimensional electron gas (2DEG) behavior. © 2012 Elsevier B.V. All rights reserved.

Hydrogen oxidation on ordered intermetallic phases of platinum and tin - A combined experimental and theoretical study

Hydrogen oxidation on the surfaces of the intermetallic compounds Pt 3Sn, PtSn and PtSn2 has been studied by the rotating disc electrode technique. Pt3Sn and PtSn were found to be good catalysts, about as good as Pt, while PtSn2 was inactive over the investigated range of potentials. Underpotential deposition of hydrogen is observed only on Pt3Sn. These results are explained by theoretical calculations based on a theory developed within our own group, and by density functional theory. © 2012 Elsevier B.V.

Role of acidic and basic electrolytes on the structure and morphology of cathodically reduced indium tin oxide (ITO) substrates

In this report we track the structural changes suffered by ITO along galvanostatic polarization at different current densities by X-ray diffraction and SEM micrographs. The XRD shown that cathodic treatment induces structural change in ITO, characterized by appearing peaks set distinct from ITO original structure associated to metallic phase of the solid solution of In-Sn. It is interesting to note that although the different ions present in the solution are not, at least to a noticeable degree, incorporated in the metallic phase, the SEM images show that they do influence its formation, pointing to some type of adsorptive mechanism of the inert ions during the lateral diffusion of the metallic ions. © 2013 Elsevier Ltd. All rights reserved.

Opciones tecnológicas y oportunidades para el desarrollo: un estudio comparativo entre el aluminio y el estaño = Technological options and opportunities for development: a comparative study between aluminium and tin

Incluye Bibliografía

Report of the Meeting on Technological Options and Opportunities for Development: the Aluminium and Tin Industries in Latin America and the Caribbean = Informe de la Reunión sobre Opciones Tecnológicas y Oportunidades para el Desarrollo: las Industrias del Aluminio y el Estaño en América Latina y el Caribe

Contiene discurso de inauguración, presentación y comentario de los documentos presentados y recomendaciones de la reunión en que se trataron las opciones tecnológicas para el desarrollo de las industrias del aluminio en América Latina y el Caribe.

Latin American supply and major world market demand for the principal metals, 1970-1990: aluminium, copper, iron, nickel, lead, zinc, tin

Includes bibliography

The tin industry of Latin America: technological options and opportunities for growth

Includes bibliography

Desenvolvimento de uma Plataforma de Software para a Modelagem Digital de Terrenos baseada em TIN

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo do crescimento e caracterização de nanofitas do sistema ITO

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influência do óxido de cromo nas propriedades varistoras do óxido de estanho

Pós-graduação em Química - IQ

Catalisadores 'PT' e 'PTSN' modificados com 'SN''O IND.2' para a oxidação eletroquímica de etanol

Pós-graduação em Química - IQ

Links of the transnational corporations with the tin industry in Bolivia = Vinculaciones de las empresas transnacionales con la industria del estaño en Bolivia

Includes bibliography

Síntese de nanofios de óxidos semicondutores para aplicações em dispositivos ópticos e eletrônicos

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)