Si-based resonant-cavity-enhanced photodetector

Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300nm, The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5V is measured 10.2mA/W at 1285nm, and a full-width at half maximum of 25nm for the top-illumination RCE photodetector, and 19mA/W at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305nm with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells

We report on the fabrication of circular waveguide photodetectors with a response near 1.3 mu m wavelength using SiGe/Si multiple quantum wells. The quantum efficiency of the circular waveguide photodetector is improved when compared with that of the rib waveguide photodetector in the same wavelength at 1.3 mu m The frequency response of the photodetectors is simulated. The emciency-bandwidth product of the circular waveguide photodetectors is improved correspondingly. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

The fabrication of thick SiO2 layer by anodization

Silicon-based silica waveguide (SiO2/Si) devices have huge applications in optical telecommunication. SiO2 up to 25-mu m thick is necessary for some passive SiO2/Si waveguide devices. Oxidizing porous silicon to obtain thick SiO2 as cladding layer is presented. The experimental results of porous layer and oxidized porous layer formation were given. The relationship between cracking of SiO2 and temperature varying rate was given experimentally. Such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent SiO2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (C) 2000 Elsevier Science B.V. All rights reserved.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

长期重金属污染胁迫下农田土壤微生物特征研究

本论文以沈阳张士污灌区土壤为例，首次采用传统微生物生态学与现代微生物分子生态学相结合的研究方法系统地研究了污灌区长期重金属污染胁迫下原位农田土壤微生物特征。结果表明，虽然已经停止污灌十多年，张士灌区土壤耕作层（0～30 cm）仍然存在普遍的Cd污染，灌区土壤Cd含量高达1.75～3.89 mg kg-1。部分区域土壤Cd呈现向下迁移的趋势,且同时伴随有Cu、Zn复合污染。灌区土壤Cd含量较高时清水灌溉能降低土壤表层Cd含量，灌区土壤Cd含量下降到一定程度（约2 mg kg-1）后，清水灌溉对消除土壤表层Cd污染的作用消失。重金属元素中Cd对土壤微生物的影响最突出，在三个不同季节中土壤Cd与土壤微生物生物量（MBC）和微生物商（qM）呈显著负相关，与土壤微生物代谢商（qCO2）呈显著正相关。所检测的微生物指标中qM和qCO2与多种重金属元素呈显著相关性，可作为评价一定程度重金属污染的微生物指标。土壤营养元素（除P外）与微生物特征呈显著正相关性，土壤营养元素对微生物的刺激作用有可能在某种程度上掩盖了重金属对土壤微生物的负面影响。 用16S rDNA-PCR-DGGE方法，研究了不同浓度Cd胁迫下土壤Cd抗性细菌群落结构的动态变化，结果表明在Cd的胁迫下Cd抗性细菌多样性显著增加，不同土壤样品中Cd抗性细菌群落结构向相似的方向偏移，群落结构最终将可能趋向一致。Cd胁迫使敏感菌Pontibacter消失，而伯克氏菌（Burkholderia）、罗尔斯通氏菌（Ralstonia）、芽孢杆菌（Bacillus）和节杆菌（Arthrobacter）则富集成为优势菌。 从张士灌区Cd污染土壤中分离出32株Cd抗性细菌，研究了Cd抗性细菌和Cd抗性基因cadA的分布特征。这32株Cd抗性细菌分别归属于拟杆菌门(Bacteroidetes)（37.5%）、变形菌门(Proteobacteria) （37.5%）、放线菌门(Actinobacteria)（9.4%） 和厚壁菌门(Firmicutes)（15.6%）。在液体LB培养基中对Cd的抗性浓度都大于2 mmol L-1，对Zn抗性浓度介于5～13 mmol L-1。首次从Cetobacillus属的Cd抗性菌株S1基因组DNA中扩增出cadA基因的部分片断。在芽孢杆菌属(Bacillus)的4株菌N7，N9，N10和N11的基因组DNA中扩增出cadA基因的部分片断。序列分析结果表明这5株菌的cadA基因序列相似性为99％～93％，它们与坚强芽孢杆菌（Bacillus firmus） cadA 基因序列(M90750）相似性为94％～92％。系统发育分析结果表明这5株菌的cadA都与Bacillus firmus cadA 基因有着较近的亲缘关系。不同属的Cd抗性细菌间cadA基因的高度相似性揭示了cadA基因能在不同种属间转移的特性。

Cell cycle and apoptosis alteration of human hepatocarcinoma cells by subclinical-dose C-12(6+)-beam irradiation

Objective The purpose of this study is to investigate the effect of subdinical-dose C-12(6+)-beam irradiation on cell cycle and cell apoptosis in hepatocarcinoma cells. Materials and methods The HepG(2) cells were exposed to 0-2.0 Gy of either the C-12(6+) beam or a gamma-ray. Cell survival was detected by clonogenic assay. Cell cycle was determined by flow-cytometry analysis. The apoptosis was monitored by fluorescence microscope with DAPI staining. p53 and p21 expression were detected by Western blot. Results The G(0)/G(1) cells in the irradiated groups were significantly more than those in the control (P<0.05). The C-12(6+)-ion irradiation had a greater effect on the cell cycle of HepG(2) cells (including promoting G(1)-phase and G(2)-phase arrest) than gamma-ray irradiation. The apoptotic cells induced by C-12(6+) beam were significantly more numerous than those induced by gamma-ray (P<0.05). The carbon ions had a stronger effect on p53 and p21 expression than the gamma-ray irradiation. The survival fractions for cells irradiated by C-12(6+) beam were significantly smaller than those irradiated by gamma-ray (P<0.05).

Alterations of immune functions induced by 12C6+ion irradiation in mice

Purpose: To estimate the biological risks to the immune system of the type of space radiation, 12C6+, encountered by cosmonauts during long-term travel in space. Materials and methods: The Kun-Ming strain mice were whole-body irradiated by 12C6+ ion with 0, 0.01, 0.05, 0.075, 0.2, 0.3, 0.5, 0.75, 1 or 2 Gy, at a dose rate of 1 Gy/min. At 35 days after irradiation, the thymus and spleen weights were measured, the natural killer (NK) cells activity of spleen was determined by 3-(4, 5-dimethylthiazol-2-yl)-2, 5-diphenyl tetrazolium bromide (MTT), and the interferon-gamma (IFN-gamma) levels in serum and thymus were detected with enzyme-linked immunosorbent assays (ELISA). Results: The results showed that the thymus weight, IFN-gamma levels in serum and the activity of splenic NK-cells had significantly increased at a dose of 0.05 Gy. With further dose increase, the weight of spleen continued to increase but the weight of thymus, IFN-gamma level and NK-cells activity declined. Conclusions: These results suggest that the dose of 0.05 Gy irradiation has a stimulatory effect on mouse immunity; this effect declined with increasing dose.

Alleviation of pre-exposure of mouse brain with low-dose C-12(6+) ion or Co-60 gamma-ray on male reproductive endocrine damages induced by subsequent high-dose irradiation

Irradiation has been widely reported to damage organisms by attacking on proteins, nucleic acid and lipids in cells. However, radiation hormesis after low-dose irradiation has become the focus of research in radiobiology in recent years. To investigate the effects of pre-exposure of mouse brain with low-dose C-12(6+) ion or Co-60 gamma (gamma)-ray on male reproductive endocrine capacity induced by subsequent high-dose irradiation, the brains of the B6C3F(1) hybrid strain male mice were irradiated with 0.05 Gy of C-12(6+) ion or Co-60 gamma-ray as the pre-exposure dose, and were then irradiated with 2 Gy as challenging irradiation dose at 4 h after pre-exposure. Serum pituitary gonadotropin hormones, follicle-stimulating hormone (FSH) and luteinizing hormone (LH), testosterone, testis weight, sperm count and shape were measured on the 35th day after irradiation. The results showed that there was a significant reduction in the levels of serum FSH, LH, testosterone, testis weight and sperm count, and a significant increase in sperm abnormalities by irradiation of the mouse brain with 2 Gy of C-12(6+) ion or Co-60 gamma-ray. Moreover, the effects were more obvious in the group irradiated by C-12(6+) ion than in that irradiated by Co-60 gamma-ray. Pre-exposure with low-dose C-12(6+) ion or Co-60 gamma-ray significantly alleviated the harmful effects induced by a subsequent high-dose irradiation.

Chromosomal aberrations induced by C-12(6+) ions and Co-60 gamma-rays in mouse immature oocytes

The ovaries of Kun-Ming strain mice (3 weeks) were irradiated with different doses of C-12(6+) ion or Co-60 gamma-ray. Chromosomal aberrations were analyzed in metaphase II oocytes at 7 weeks after irradiation. The relative biological effectiveness (RBE) of C C-12(6+) ion was calculated with respect to Co-60 gamma-ray for the induction of chromosornal aberrations. The C-12(6+) ion and Co-60 gamma-ray dose-response relationships for chromosomal aberrations were plotted by linear quadratic models. The data showed that there was a dose-related increase in frequency of chromosomal aberrations in all the treated groups compared to controls. The RBE values for C-12(6+) ions relative to (CO)-C-60 gamma-rays were 2.49, 2.29, 1.57, 1.42 or 1.32 for the doses of 0.5, 1.0, 2.07 4.0 or 6.0 Gy, respectively. Moreover, a different distribution of the various types of aberrations has been found for C-12(6+) ion and Co-60 gamma-ray irradiations. The dose-response relationships for C-12(6+) ion and (CO)-C-60 gamma-ray exhibited positive correlations. The results from the present study may be helpful for assessing genetic damage following exposure of immature oocytes to ionizing radiation.

eta photoproduction on the proton in a chiral constituent quark approach via a one-gluon-exchange model

A formalism based on a chiral quark model (chi QM) approach complemented with a one-gluon-exchange model, to take into account the breakdown of the SU(6)circle times O(3) symmetry, is presented. The configuration mixing of wave functions for nucleon and resonances are derived. With few adjustable parameters, differential cross-section and polarized-beam asymmetry for the gamma p -> eta p process are calculated and successfully compared with the data in the center-of-mass energy range from threshold to 2 GeV. The known resonances S-11(1535), S-11(1650), P-13(1720), D-13(1520), and F-15(1680), as well as two new S-11 and D-15 resonances, are found to be dominant in the reaction mechanism. Moreover, connections among the scattering amplitudes of the chi QM approach and the helicity amplitudes, as well as decay widths of resonances, are established. Possible contributions from the so-called missing resonances are investigated and found to be negligible.

Rotating wheel filter design and optimization for a uniform depth dose distribution in heavy ion therapy

Treatment planning of heavy-ion radiotherapy involves predictive calculation of not only the physical dose but also the biological dose in a patient body. The goal in designing beam-modulating devices for heavy ion therapy is to achieve uniform biological effects across the spread-out Bragg peak (SOBP). To achieve this, a mathematical model of Bragg peak movement is presented. The parameters of this model have been resolved with Monte Carlo method. And a rotating wheel filter is designed basing on the velocity of the Bragg peak movement.