Optimizing the energy offset between dye and hole-transporting material in solid-state dye-sensitized solar cells

The power-conversion efficiency of solid-state dye-sensitized solar cells can be optimized by reducing the energy offset between the highest occupied molecular orbital (HOMO) levels of dye and hole-transporting material (HTM) to minimize the loss-in-potential. Here, we report a study of three novel HTMs with HOMO levels slightly above and below the one of the commonly used HTM 2,2′,7,7′- tetrakis(N,N-di-p-methoxyphenylamino)-9,9′- spirobifluorene (spiro-OMeTAD) to systematically explore this possibility. Using transient absorption spectroscopy and employing the ruthenium based dye Z907 as sensitizer, it is shown that, despite one new HTM showing a 100% hole-transfer yield, all devices based on the new HTMs performed worse than those incorporating spiro-OMeTAD. We further demonstrate that the design of the HTM has an additional impact on the electronic density of states present at the TiO2 electrode surface and hence influences not only hole- but also electron-transfer from the sensitizer. These results provide insight into the complex influence of the HTM on charge transfer and provide guidance for the molecular design of new materials. © 2013 American Chemical Society.

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Functional magnetic resonance imaging of impaired sensory prediction in schizophrenia.

IMPORTANCE: Forward models predict the sensory consequences of planned actions and permit discrimination of self- and non-self-elicited sensation; their impairment in schizophrenia is implied by an abnormality in behavioral force-matching and the flawed agency judgments characteristic of positive symptoms, including auditory hallucinations and delusions of control. OBJECTIVE: To assess attenuation of sensory processing by self-action in individuals with schizophrenia and its relation to current symptom severity. DESIGN, SETTING, AND PARTICIPANTS: Functional magnetic resonance imaging data were acquired while medicated individuals with schizophrenia (n = 19) and matched controls (n = 19) performed a factorially designed sensorimotor task in which the occurrence and relative timing of action and sensation were manipulated. The study took place at the neuroimaging research unit at the Institute of Cognitive Neuroscience, University College London, and the Maudsley Hospital. RESULTS: In controls, a region of secondary somatosensory cortex exhibited attenuated activation when sensation and action were synchronous compared with when the former occurred after an unexpected delay or alone. By contrast, reduced attenuation was observed in the schizophrenia group, suggesting that these individuals were unable to predict the sensory consequences of their own actions. Furthermore, failure to attenuate secondary somatosensory cortex processing was predicted by current hallucinatory severity. CONCLUSIONS AND RELEVANCE: Although comparably reduced attenuation has been reported in the verbal domain, this work implies that a more general physiologic deficit underlies positive symptoms of schizophrenia.

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. © 2013 American Chemical Society.

Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy

Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s. © 2013 IEEE.

Transient terahertz spectroscopy of mono- and tri-layer CVD-grown MoS 2

Molybdenum disulpide, a novel two-dimensional semiconductor, was studied using optical-pump terahertz-probe spectroscopy. Mono and trilayer samples grown by chemical vapour deposition were compared to reveal their dynamic electrical response. © 2013 IEEE.

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy

Accurately measuring the electronic properties of nanowires is a crucial step in the development of novel semiconductor nanowire-based devices. With this in mind, optical pump-terahertz probe (OPTP) spectroscopy is ideally suited to studies of nanowires: it provides non-contact measurement of carrier transport and dynamics at room temperature. OPTP spectroscopy has been used to assess key electrical properties, including carrier lifetime and carrier mobility, of GaAs, InAs and InP nanowires. The measurements revealed that InAs nanowires exhibited the highest mobilities and InP nanowires exhibited the lowest surface recombination velocity. © 2013 Copyright SPIE.

Dependence of dye regeneration and charge collection on the pore-filling fraction in solid-state dye-sensitized solar cells

Solid-state dye-sensitized solar cells rely on effective infiltration of a solid-state hole-transporting material into the pores of a nanoporous TiO 2 network to allow for dye regeneration and hole extraction. Using microsecond transient absorption spectroscopy and femtosecond photoluminescence upconversion spectroscopy, the hole-transfer yield from the dye to the hole-transporting material 2,2′,7,7′-tetrakis(N,N-di-p- methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) is shown to rise rapidly with higher pore-filling fractions as the dye-coated pore surface is increasingly covered with hole-transporting material. Once a pore-filling fraction of ≈30% is reached, further increases do not significantly change the hole-transfer yield. Using simple models of infiltration of spiro-OMeTAD into the TiO2 porous network, it is shown that this pore-filling fraction is less than the amount required to cover the dye surface with at least a single layer of hole-transporting material, suggesting that charge diffusion through the dye monolayer network precedes transfer to the hole-transporting material. Comparison of these results with device parameters shows that improvements of the power-conversion efficiency beyond ≈30% pore filling are not caused by a higher hole-transfer yield, but by a higher charge-collection efficiency, which is found to occur in steps. The observed sharp onsets in photocurrent and power-conversion efficiencies with increasing pore-filling fraction correlate well with percolation theory, predicting the points of cohesive pathway formation in successive spiro-OMeTAD layers adhered to the pore walls. From percolation theory it is predicted that, for standard mesoporous TiO2 with 20 nm pore size, the photocurrent should show no further improvement beyond an ≈83% pore-filling fraction. Solid-state dye-sensitized solar cells capable of complete hole transfer with pore-filling fractions as low as ∼30% are demonstrated. Improvements of device efficiencies beyond ∼30% are explained by a stepwise increase in charge-collection efficiency in agreement with percolation theory. Furthermore, it is predicted that, for a 20 nm pore size, the photocurrent reaches a maximum at ∼83% pore-filling fraction. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

GROWTH OF HIGH-QUALITY GALLIUM-ARSENIDE ON HF-ETCHED SILICON (001) BY CHEMICAL BEAM EPITAXY

HF etching followed by relatively low temperature (almost-equal-to 600-degrees-C) pretreatment is shown to provide a suitable substrate for the heteroepitaxial growth of GaAs on Si(100) by CBE using TEGa and AsH3 as sources. Rutherford backscattering (RBS), photoluminescence (PL), transmission electron microscopy (TEM), and Raman measurements show the low-defect nature of the GaAs epilayer.

CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS

The growth of high quality AlGaAs by CBE bas been limited by the high levels of carbon and oxygen contamination. The use of alane based precursors offers a significant reduction in such contamination. We report for the first time the CBE growth of AlxGa1-xAs from triethylgallium, dimethylethylamine-alane and arsine, and compare with. growth from triethylgallium, trimethylamine-alane and arsine. Some preliminary results of work on the CBE growth of GaAs on silicon will also be reported.

利用CBE技术在Si衬底上生长GaAs薄膜

于2010-11-23批量导入

Avaliação do potencial de estabelecimento de projetos de Mecanismo de Desenvolvimento Limpo (MDL) de uso da terra, Mudança do Uso da Terra e Florestas (LULUCF) no município de Cachoeiras de Macacu, RJ - Brasil.

O aumento da concentração de Gases de Efeito Estufa (GEE) tem sido apontado como o principal agente de mudança nos processos dinâmicos da atmosfera, promovendo mudanças climáticas com ameaças à humanidade (IPCC, 2007). Em resposta aos problemas ambientais ligados às mudanças climáticas globais, a comunidade internacional adotou, em 1992, a Convenção Quadro das Nações Unidas sobre Mudança do Clima (CQNUMC) - conhecida internacionalmente pela sigla UNFCCC - United Nations Framework Convention on Climate Change. O Protocolo de Quioto, firmado em 1997, estabeleceu um acordo de metas globais coletivas para redução das emissões de gases de efeito estufa dos países industrializados a cerca de 5% dos níveis observados em 1990, entre 2008 e 2012 (UNFCCC, 1998). O Mecanismo de Desenvolvimento Limpo - MDL é o mecanismo criado no Protocolo de Quioto que permite a participação dos países em desenvolvimento na venda de Reduções Certificadas de Emissões (RCE) para os países com metas de redução de GEE.

Boas práticas agrícolas no cultivo da banana na comunidade do Faraó, município de Cachoeiras de Macacu, Estado do Rio de Janeiro.

A banana (Musa spp.) é atualmente um dos produtos agrícola mais importante do município de Cachoeiras de Macacu, RJ. Nesse município, a localidade de Faraó, situada na microbacia do rio Batatal, figura entre as principais produtoras de banana. O objetivo do presente documento é apresentar os resultados do diagnóstico realizado na localidade de Faraó a fim de identificar as Boas Práticas Agrícolas (BPA) necessárias para a produção local de banana. Foi utilizada uma metodologia participativa para a identificação das principais práticas agrícolas, das fraquezas e das potencialidades dos sistemas de produção adotados. Como resultado, foi possível indicar as melhores práticas agrícolas passíveis de serem adotadas pelos agricultores, dentre as quais se destacam o plantio em nível, a análise de solos, o maior aporte de nutrientes e matéria orgânica no solo, os cuidados fitossanitários e os cuidados especiais no momento da colheita e pós-colheita.

Perfil dos sistemas de produção agropecuária: uma visão do produtor rural na sub-bacia de Batatal em Cachoeiras de Macacu, Rio de Janeiro, RJ.

2014