Comparative electrical behavior at low and high current of SnO(2)- and ZnO-based varistors

The complete I-V characteristics of SnO(2)-based varistors, particularly of the Pianaro system SCNCr consisting in 98.9%SnO(2)+1%CoO+0.05%Nb(2)O(5)+0.05%Cr(2)O(3), all in mol%, have been seldom reported in the literature. A comparative study at low and high currents of the nonohmic behavior of SCNCr- and ZnO-based varistors (modified Matsuoka system) is proposed in this work. The SCNCr system showed higher nonlinearity coefficients in the whole range of measured current. The electrical breakdown field (E(b)) was twice as high for the SCNCr system (5400 V/cm) than for the ZnO varistor (2600 V/cm) due to a smaller average grain size of the former (4.5 mu m) with respect to the latter (8.5 mu m). Nevertheless, we consider that another important factor responsible for the high E(b) in the SCNCr system is the great number of electrically active interfaces (85%) as determined with electrostatic force microscopy (EFM). It was also established that the SCNCr system might be produced in disks of smaller dimensions than that of commercial ZnO-based product, with a 5.0 cm(-1) minimal area-volume (A/V) ratio. The SCNCr reached the saturation current in a short time because of the high resistivity of the grains, which is five times higher than that of the grains in ZnO-based varistors.

Electrical and microstructural properties of microwave sintered SnO2-based varistors

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Caracterização elétrica de blocos varistores à base de SnO2

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

On an approximate analytical solution to a nonlinear vibrating problem, excited by a nonideal motor

This paper analyzes through Multiple Scales Method a response of a simplified nonideal and nonlinear vibrating system. Here, one verifies the interactions between the dynamics of the DC motor (excitation) and the dynamics of the foundation (spring, damper, and mass). We remarked that we consider cubic nonlinearity (spring) and quadratic nonlinearity (DC motor) of the same order of magnitude according to experimental results. Both analytical and numerical results that we have obtained had good agreement.

ZnO varistors from intensively milled powders

Two ways of application of intensive milling in ZnO varistors processing were compared. First was intensive milling of mixture of previously prepared constituent phases. In this case, intensive milling was applied only to obtain highly activated nanocrystalline varistor powder mixtures. Second application is intensive milling of simple mixture of oxides that could result not only in activation and formation of nanocrystal line powders, but also in mechanochernical reaction and synthesis of constituent phases. Powders and ceramics samples were characterized by XRD and SEM analysis. as well as by de electrical measurements (nonlinearity coefficients, leakage current and breakdown field). Differences in microstructural and electrical properties of obtained varistors were discussed and optimal milling and processing conditions were recommended. The best electrical characteristics were found in sample ZI -DMCP-m, which exhibited leakage current of 2.5 mu A/cm(2), nonlinear coefficient reaching 58 and breakdown field of 8950 V/cm. (c) 2007 Elsevier Ltd. All rights reserved.

BOUSSINESQ-TYPE SYSTEM OF EQUATIONS IN THE BENARD-MARANGONI SYSTEM

A system of coupled evolution equations for the bulk velocity and the surface displacement is found to govern the long-wavelength perturbations in a Benard-Marangoni system. This system of equations, involving nonlinearity, dispersion, and dissipation, is a generalization of the usual Boussinesq system.

Structural and electrical properties of ZnO varistors containing different spinel phases

Structural and electrical properties of ZnO varistors were investigated as a function of spinel composition. Six varistor mixtures differing only in chemical composition of spinel, were prepared by mixing separately synthesized constituent phases (DSCP method). Compositions of constituent phases in sintered samples were investigated by changes of lattice parameters of the phases, as well as by EDS analysis of the constituent phases. It was found that compositions of ZnO, intergranular and spinel phases were partially changed during sintering due to redistribution of additives, that was controlled by starting spinel composition and its stability. Electrical characterization showed significant difference in electrical properties of investigated varistors: nonlinearity coefficients ranging from 22 to 55 and leakage currents differing by the order of magnitude. Activation energies of conduction were obtained from ac impedance spectroscopy measurements. Calculated values of activation energies were in the range 0.61-1.0 eV confirming difference in defect structure of ZnO grain boundaries in varistors containing different spinel phases. (C) 2001 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.

A low-voltage low-power analog memory cell with built-in 4-quadrant multiplication

An accurate switched-current (SI) memory cell and suitable for low-voltage low-power (LVLP) applications is proposed. Information is memorized as the gate-voltage of the input transistor, in a tunable gain-boosting triode-transconductor. Additionally, four-quadrant multiplication between the input voltage to the transconductor regulation-amplifier (X-operand) and the stored voltage (Y-operand) is provided. A simplified 2 x 2-memory array was prototyped according to a standard 0.8 mum n-well CMOS process and 1.8-V supply. Measured current-reproduction error is less than 0.26% for 0.25 muA less than or equal to I-SAMPLE less than or equal to 0.75 muA. Standby consumption is 6.75 muW per cell @I-SAMPLE = 0.75 muA. At room temperature, leakage-rate is 1.56 nA/ms. Four-quadrant multiplier (4QM) full-scale operands are 2x(max) = 320 mV(pp) and 2y(max). = 448 mV(pp), yielding a maximum output swing of 0.9 muA(pp). 4QM worst-case nonlinearity is 7.9%.

Nonlinear properties and stability of SnO2 varistors prepared by evaporation and decomposition of suspensions

SnO2 varistors doped with CoO, Cr2O3 and Nb2O5 were prepared by evaporation and decomposition of suspensions. The composition of the varistors was optimized to improve electrical properties, such as nonlinearity, leakage current and electrical stability. The best results were achieved with the following composition: 99.15% SnO2 +0.75% CoO+0.05% Cr2O3 +0.05% Nb2O5. Samples showed high density, reaching 99.5% of the theoretical density, as well as an homogeneous microstructure. The nonlinear coefficient was higher than 30 in the current range from 10(-7) to 10(-2) A/cm(2). The leakage current was 0.86 mu A/cm(2). These samples showed high stability of electrical parameters when they were exposed to high current of 27 mA/cm(2) for different time periods up to 30 min. (c) 2005 Elsevier Ltd. All rights reserved.

Femtosecond nonlinear optical properties of lead-germanium oxide amorphous films

The nonlinear (NL) response of lead-germanium oxide amorphous films was investigated using a Ti:saphire laser delivering pulses of approximate to 150 fs at 800 nm. The Kerr shutter technique was employed to reveal the time response of the nonlinearity that is smaller than 150 fs. The sign and magnitude of the nonlinearity were obtained using a novel technique called thermally managed eclipse Z scan which allows the simultaneous characterization of cumulative and noncumulative NL effects. The NL refractive index of electronic origin, n(2)approximate to 2x10(-17) m(2)/W, and the NL absorption coefficient, alpha(2)approximate to 3x10(3) cm/GW, were determined. (c) 2007 American Institute of Physics.

Nonlinear optical properties of tungstate fluorophosphate glasses

The optical nonlinearity of tungstate fluorophosphate glasses, synthesized in the NaPO3-BaF2-WO3 system, was investigated through experiments based on the third-order susceptibility, chi((3)). Nonlinear (NL) refraction and NL absorption measurements in the picosecond regime were performed using the Z-scan technique at 532 nm. NL refractive index, n(2)proportional toRe chi((3)), ranging from 0.4x10(-14) cm(2)/W to 0.6x10(-14) cm(2)/W were determined. The two-photon absorption coefficient, alpha(2)proportional toIm chi((3)), for excitation at 532 nm, vary from 0.3 to 0.5 cm/GW. Light induced birefringence experiments performed in the femtosecond regime indicate that the response time of the nonlinearity at 800 nm is faster than 100 fs. The experiments show that chi((3)) is enhanced when the WO3 concentration increases and this behavior is attributed to the hyperpolarizabilities associated to W-O bonds. (C) 2004 American Institute of Physics.

Influence of Ta2O5 on the electrical properties of ZnO- and CoO-doped SnO2 varistors

SnO2-based varistors doped with 0.5% cobalt, 0.5% zinc and various tantalum amounts were prepared by the solid-state route. Experimental evidence shows that small quantities of Ta2O5 improve the nonlinear properties of the samples significantly. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1050 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. (C) 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.

DISSIPATIVE BOUSSINESQ SYSTEM OF EQUATIONS IN THE BENARD-MARANGONI PHENOMENON

By using the long-wavelength approximation, a system of coupled evolution equations for the bulk velocity and the surface perturbations of a Benard-Marangoni system is obtained. It includes nonlinearity, dispersion, and dissipation, and it can be interpreted as a dissipative generalization of the usual Boussinesq system of equations. As a particular case, a strictly dissipative version of the Boussinesq system is obtained.

Hopf-zero bifurcations of reversible vector fields

We study the dynamics of a class of reversible vector fields having eigenvalues (0, alphai, -alphai) around their symmetric equilibria. We give a complete list of all normal forms for such vector fields, their versal unfoldings, and the corresponding bifurcation diagrams of the codimensional-one case. We also obtain some important conclusions on the existence of homoclinic and heteroclinic orbits, invariant tori and symmetric periodic orbits.

Investigation of electrical properties of tantalum doped SnO2 varistor system

Ta2O5 doped SnO2 varistor systems containing 0.5 mol% ZnO and 0.5 mol% Coo were prepared by mixed oxide method. Considering that ZnO and Coo oxides are densification additives only the SnO(2)center dot ZnO center dot CoO ceramics cannot exhibit electrical nonlinearity. A small amount of Ta2O5 improves the nonlinear properties of the samples greatly. The height and width of the defect barriers were calculated. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1100 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. A grain-boundary defect barrier model for the SnO(2)center dot ZnO center dot CoO center dot Ta2O5 varistor system was also introduced. (c) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.