甲基苯丙胺对微囊藻生长效应的动力学研究及机理初探

研究了不同浓度甲基苯丙胺在不同pH值条件下对铜绿微囊藻的生长效应及其动力学过程,并用色谱法对其作用机理进行了初步探讨.结果表明,在pH8.0,甲基苯丙胺浓度为0.2,2.0,20.0mg/L时,对微囊藻生长分别表现出促进、部分抑制和完全抑制效应;而在pH6.0时,3个浓度的甲基苯丙胺对微囊藻生长均表现出抑制效应,且随浓度的增大抑制效应增强.色谱分析结果表明,低浓度(0.2mg/L)的甲基苯丙胺促进了微囊藻的生长代谢,而高浓度(20.0mg/L)的甲基苯丙胺则损伤微囊藻细胞,抑制其生长代谢.

光照、温度及宿主粘液对河鲈锚首吸虫虫卵孵化的影响

光照、温度及宿主粘液对河鲈锚首吸虫虫卵孵化的影响夏晓勤，聂品，姚卫建（中国科学院水生生物研究所，武汉４３００７２）关键词河鲈锚首吸虫，虫卵孵化，鳜鱼ＥＦＦＥＣＴＳＯＦＬＩＧＨＴ，ＴＥＭＰＥＲＡＴＵＲＥＡＮＤＨＯＳＴＭＵＣＵＳＯＮＴＨＥＥＧＧＨＡＴＣＨ...

20种鲤科鱼类同工酶的表型分析及有关进化问题的探讨

本文对20种鲤科鱼类的同工酶表型进行了分析比较。鲌亚科中存在几种不同的LDH同工酶表型,以各种LDH同工酶表型所组成的一些类群,反映出亚科水平中属间的亲缘关系。按同工酶的表型可将它们分为4个类群,这些类群的划分和进化趋异的过程是与经典的系统分类相一致的。按LDH同工酶表型的异同可将鲌亚科、密鲴亚科和鲢亚科的鱼类划分成两个主要的支系。一支鱼类是具有相同迁移率的LDH-A-4 同工酶,其中包括鲌亚科的多数鱼类,由LDH 同工酶的表型推断它们与雅罗鱼亚科有较密切的亲缘关系;另一支鱼类则是具有相同迁移率的 LDH

20 Gb/s QPSK transmission using an electro-optically modulated vertical-cavity surface-emitting laser

20 Gb/s QPSK transmission over 100 m of OM3 fibre using an EOM VCSEL under QPSK modulation is reported. Bit-error-ratio measurements are carried out to express the quality of the transmission scheme. © 2011 Optical Society of America.

Monolithic electro-optically modulated VCSEL suitable for radio over fibre applications to 20 GHz

An integrated EOM VCSELs is shown to offer high linearity (92dB/Hz2/3 at 6GHz) and by extrapolation ~90dB/Hz2/3 up to 20GHz. Successful modulation with IEEE 802.11g signals is demonstrated at 6GHz with a 12dB dynamic range. © OSA/OFC/NFOEC 2011.

Low cost optical access networks using 20 Gchip/s electronic CMDA

This paper describes electronically processed CDMA techniques which allow Gb/s data rates for each user in passive optical networks. We will present recent progress including a 16 chip Walsh-code system operating at 18 Gchip/s supporting up to 16 users. © 2009 IEEE.

20 Gb/s mode-group-division multiplexing employing Hermite-Gaussian launches over worst-case multimode fiber links

For the first time, mode group division multiplexing is achieved in a multimode fiber link using a 2-D Hermite-Gaussian mode launch. 20 Gb/s error-free transmission is achieved over a 250 m worst-case OM1 multimode fiber link. © OSA 2014.

Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-13T16:03:37Z No. of bitstreams: 1 Growing 20 cm Long DWNTsTWNTs at a Rapid Growth Rate of 80-90 mu ms .pdf: 3229914 bytes, checksum: 0259795afb443dc6901c11df5ecd325a (MD5)

Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 mu m

Semiconductor equilateral triangle microresonators (ETRs) with side length of 5, 10, and 20 mum are fabricated by the two-step inductively coupled plasma (ICP) etching technique. The mode properties of fabricated InGaAsP ETRs are investigated experimentally by photoluminescence (PL) with the pumping source of a 980-nm semiconductor laser and distinct peaks are observed in the measured PL spectra. The wavelength spacings of the distinct peaks agree very well with the theoretical longitudinal mode intervals of the fundamental transverse modes in the ETRs, which verifies that the distinct peaks are corresponding to the enhancement of resonant modes. The mode quality factors are calculated from the width of the resonant peaks of the PL spectra, which are about 100 for the ETR with side length of 20 mum.

Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. Based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. Our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. There is no length limit for the nano-gap electrode and the nano-channel. The method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.

A 20.1 W Solid-State Laser Pumped by 887 nm with High Efficiency and TEM00 Mode

High efficiency, TEM00 mode, high repetition rate laser pumped by 887 nm is reported. 20.1 W output laser emitting at 1064 nm is achieved in a 0.3 at % Nd-doped Nd:YVO4, which absorbs pumping light of 30.7 W at 887 nm. The opto-optic efficiency and the slope efficiency are 65.5 and 88.5%, respectively. The stable Q-switching operation worked well at 100 kHz and the beam quality is near diffraction-limit with M-2 factor measured as M-2 approximate to 1.2. And the pulse waveform is analyzed in this paper.