999 resultados para 1995_12130733 CTD-75 5401504
Resumo:
通过接近玻璃转变温度的等温退火获得不同弛豫状态的Zr64.13Cu15.75Ni10.12Al10块体非晶合金样品。利用维氏显微硬度计和洛氏硬度计研究结构弛豫对合金硬度和压痕周围剪切带特征的影响规律。结果表明:在590K等温退火处理使Zr64.13Cu15.75Ni10.12Al10块体非晶合金发生焓弛豫行为,其维氏显微硬度随退火时间的延长较快增加后趋于稳定,而大载荷洛氏硬度对结构弛豫不敏感。通过洛氏压痕周围剪切带特征的研究,定量比较了结构弛豫对剪切带间距、数量的影响规律。
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The year 2004 marked the 75th anniversary of the Freshwater Biological Association. The author reflects the history of the Association focusing on the main events of the last 25 years since 1979.
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To ascertain the effect of various concentrations of oxygen in water on the fry of rainbow trout experiments were made with aquaria at various concentrations of oxygen. The food supplied was chironomid larvae (Chironomus plumosus). A surplus of food was supplied to the fry. Indices are given of the reaction of the fry to different temperatures.
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Incorporating the shielded method and post-processing method, a 75 mW single frequency Yb-doped DFB fiber laser was obtained with a 250 mW laser diode pump source at 978 nm. The threshold of the laser is 2 mW. The laser is single-polarization operation and the output power fluctuation is less than 0.2 mW in one hour when the pump power is 250 mW.
Resumo:
The Nutrient Enhanced Coastal Ocean Productivity (NECOP) Program is a component of NOAA's Coastal Ocean Program. The central hypothesis of this research is: Anthropogenic nutrient inputs have enhanced coastal ocean productivity with subsequent impacts on coastal ocean water quality, living resource yields, and the global marine carbon cycle. The initial study area for this program is the Mississippi/Atchafalaya River Outflow and adjacent Louisiana shelf region.
Resumo:
Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 x 10(-6) A/cm(2) at 0 V bias and 2.24 x 10(-4) A/cm(2) at a reverse bias of 5 V. At a wavelength of 1.55 mu m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 mu m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.
Resumo:
We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.