Singlet-triplet transition in quantum dots confined by triangular and bowl-like potentials: the effect of electric fields

We theoretically investigate the energy spectra of two-electron two-dimensional (2e 2D) quantum dots (QDs) confined by triangular potentials and bowl-like potentials in a magnetic field by exact diagonalization in the framework of effective mass theory. An in-plane electric field is,found to contribute to the singlet-triplet transition of the ground state of the 2e 2D QDs confined by triangular or bowl-like potentials in a perpendicular magnetic field. The stronger the in-plane electric field, the smaller the magnetic field for the total spin of the ground states in the dot systems to change from S = 0 to S = 1. However, the influence of an in-plane electric field on the singlet-triplet transition of the ground state of two electrons in a triangular QD modulated by a perpendicular magnetic field is quite small because the triangular potential just deviates from the harmonic potential well slightly. We End that the strength of the perpendicular magnetic field needed for the spin singlet-triplet transition of the ground state of the QD confined by a bowl-like potential is reduced drastically by applying an in-plane electric field.

The influence of internal electric fields on the transition energy of InGaN/gaN quantum well

We present a new way to meet the amount of strain relaxation in an InGaN quantum well layer grown on relaxed GaN by calculating and measuring its internal field. With perturbation theory, we also calculate the transition energy of InGaN/GaN SQWs as affected by internal fields. The newly reported experimental data by Graham et al. fit our calculations well on the assumption that the InGaN well layer suffered a 20% strain relaxation, we discuss the differences between our calculated results and the experimental data. Our calculation suggests that with the increase of indium mole fraction in the InGaN/GaN quantum well, the effect of polarization fields on the luminescence of the quantum well will increase. Moreover, our calculation also suggests that an increase in the quantum well width by only one monolayer can result in a large reduction in the transition energy. (c) 2006 Elsevier B.V. All rights reserved.

Magnetoexcitonic optical absorption in semiconductors under strong magnetic fields and intense terahertz radiation in the Voigt configuration

The magnetoexcitonic optical absorption of a GaAs bulk semiconductor driven by a terahertz (THz) field is investigated numerically. The method of the solution of the initial-value problem, in combination with the perfect matched layer technique, is used to calculate the optical susceptibility, with Coulomb interaction, Landau quantization, and THz fields involved nonperturbatively. It shows that there appear replicas and sidebands of magnetoexciton of different Landau levels, which greatly enrich the magneto-optical spectrum in the presence of a driving THz field. Copyright (C) EPLA, 2008.

COHERENT MODEL FOR RESONANT-TUNNELING OF ELECTRONS IN DOUBLE-QUANTUM WELLS UNDER ELECTRIC-FIELDS

Taking the inhomogenous broadening of the electron energy levels into account, a coherent model of the resonant tunneling (RT) of electrons in double quantum wells is presented. The validity of the model is confirmed with the experiments [M. Nido et al., Proc. SPIE 1268, 177 (1990)], and shows that the tunneling process can be explained by the simple coherent theory even in the presence of the carrier scattering. We have discussed the dependence of resonant tunneling on the barrier thickness L(B) by introducing the contrast ratio LAMBDA and the full width at half depth of the RT valley, and found that LAMBDA first increases with increasing barrier thickness, reaches a maximum, and then decreases with a further increase of L(B), in striking contrast to the Fabry-Perot model where a monotonic increase of the peak-to-valley ratio is predicted. We attribute the reduction of LAMBDA with large L(B) to the energy broadening resulting from the carrier scattering. A monotonic decrease of the full width at half depth of the RT valley with an increase of L(R) is also found.

Angular distribution of characteristic photons after radiative electron capture at strong central fields

We investigate the difference in the angular distribution of Ly-alpha(1) and K alpha(1) photons from hydrogenlike and heliumlike ions of uranium after radiative electron capture to the L shell. The strong anisotropy in the former case is changed to a very small one in the latter case. Our calculations support the observation. The effect takes place even in the limiting case of noninteracting electrons, being caused by the Pauli principle.

Melt crystallization of poly(ether ether ketone ketone) under strong electric field

In this paper, melt crystallization of poly(ether ether ketone ketone) (PEEKK) under strong electric field was investigated. In the crystal structure of PEEKK, the length of c axis was found to he 1.075 nm, increasing by 7% compared to that of PEEKK crystallized without strong electric field. The molecule chains might take a more extended conformation through the opening of the bridge bond angles by increasing from 124 degrees to 144 degrees under strong electric field in the crystal structure.

Ionization energies of beryllium in strong magnetic fields: a frozen core approximation

An effective frozen core approximation has been developed and applied to the calculation of energy levels and ionization energies of the beryllium atom in magnetic field strengths up to 2.35 x 10(5) T. Systematic improvement over the existing results for the beryllium ground and low-lying states has been accomplished by taking into account most of the correlation effects in the four-electron system. To our knowledge, this is the first calculation of the electronic properties of the beryllium atom in a strong magnetic field carried out using a configuration interaction approximation and thus allowing a treatment beyond that of Hartree-Fock. Differing roles played by strong magnetic fields in intrashell correlation within different states are observed. In addition, possible ways to gain further improvement in the energies of the states of interest are proposed and discussed briefly.

Changes in functional behavior of 93 % Pb(Mg1/3Nb2/3)O-3-7 % PbTiO3 thin films induced by ac electric fields

The dielectric properties of Au/[93%Pb(Mg1/3Nb2/3)O-3-7%PbTiO3] (PMN-PT)/(La0.5Sr0.5)CoO3/MgO thin-film capacitor heterostructures, made using pulsed laser deposition, have been investigated, with particular emphasis on the changes in response associated with increasing the magnitude of the ac measuring field. It was found that increasing the ac field caused a change in the frequency spectrum of relaxators, increasing the speed of response of "slow" relaxators, with an associated decrease in the freezing temperature (T-f) of the relaxor system; in addition, other characteristic parameters relating to polar relaxation (activation energy E-a and attempt frequency 1/tau(0)), described by fitting of the dielectric response to a Vogel-Fulcher expression, were found to change continuously as ac field levels were increased.

Dynamics of electric fields driving the laser acceleration of multi-MeV protons

The acceleration of multi-MeV protons from the rear surface of thin solid foils irradiated by an intense (similar to 10(18) W/cm(2)) and short (similar to 1.5 ps) laser pulse has been investigated using transverse proton probing. The structure of the electric field driving the expansion of the proton beam has been resolved with high spatial and temporal resolution. The main features of the experimental observations, namely, an initial intense sheath field and a late time field peaking at the beam front, are consistent with the results from particle-in-cell and fluid simulations of thin plasma expansion into a vacuum.

Impulsive electric fields driven by high-intensity interactions

The interaction of high-intensity laser pulses with matter releases instantaneously ultra-large currents of highly energetic electrons, leading to the generation of highly-transient, large-amplitude electric and magnetic fields. We report results of recent experiments in which such charge dynamics have been studied by using proton probing techniques able to provide maps of the electrostatic fields with high spatial and temporal resolution. The dynamics of ponderomotive channeling in underdense plasmas have been studied in this way, as also the processes of Debye sheath formation and MeV ion front expansion at the rear of laser-irradiated thin metallic foils. Laser-driven impulsive fields at the surface of solid targets can be applied for energy-selective ion beam focusing.

Sequential versus non-sequential double ionization in strong laser fields

<p> The recollision model has been applied to separate the probability for double ionization into contributions from electron-impact ionization and electron-impact excitation for intensities at which the dielectronic interaction is important for generating double ionization. For a wavelength of 780 am, electron-impact excitation dominates just above the threshold intensity for double ionization, approximate to 1.2 x 10(14) W cm(-2), with electron-impact ionization becoming more important for higher intensities. For a wavelength of 390 nm, the ratio between electron-impact ionization and electron-impact excitation remains fairly constant for all intensities above the threshold intensity for double ionization, approximate to 6 x 10(14) W cm(-2). The results point to an explanation of the experimental results, but more detailed calculations on the behaviour of excited He+ ions are required.</p>