The electrochemical behaviour of Ti-13Nb-13Zr alloy in various solutions

The electrochemical behaviour of a near-beta Ti-13Nb-13Zr alloy for the application as implants was investigated in various solutions. The electrolytes used were 0.9 wt% NaCl solution, Hanks` solution and a culture medium known as minimum essential medium (MEM) composed of salts, vitamins and amino acids, all at 37 degrees C. The electrochemical behaviour was investigated by the following electrochemical techniques: open circuit potential measurements as a function of time, electrochemical impedance spectroscopy (EIS) and determination of polarisation curves. The obtained results showed that the Ti alloy was passive in all electrolytes. The EIS results were analysed using an equivalent electrical circuit representing a duplex structure oxide layer, composed of an inner barrier layer, mainly responsible for the alloy corrosion resistance, and an outer and porous layer that has been associated to osteointegration ability. The properties of both layers were dependent on the electrolyte used. The results suggested that the thickest porous layer is formed in the MEM solution whereas the impedance of the barrier layer formed in this solution was the lowest among the electrolytes used. The polarisation curves showed a current increase at potentials around 1300 mV versus saturated calomel electrode (SCE), and this increase was also dependent on the electrolyte used. The highest increase in current density was also associated to the MEM solution suggesting that this is the most aggressive electrolyte to the Ti alloy among the three tested solutions.

The influence of the atmosphere on the sintering of aluminum

Alloys of Al, Al-0.15Mg, and Al-12Sn made using air atomized aluminum powder and pressed to green densities of 75 to 98 pet were sintered under argon or nitrogen. Sintering in argon is only effective at high green densities when magnesium is present. In contrast, highly porous aluminum can be sintered in nitrogen without the need for magnesium. The oxygen concentration in the gas is reduced by the aluminum through a self-gettering process. The outer layers of the porous powder compact serve as a getter for the inner layers such that the oxygen partial pressure is reduced deep within the pore network. Aluminum nitride then forms, either by direct reaction with the metal or by reduction of the oxide layer, and sintering follows.

How cracks in SiOx-coated polyester films affect gas permeation

In this paper theoretical models have been established that can account for the gas transmission through nanocomposite laminates, consisting of an oxide layer of finite permeability containing defects, on a polymer sheet of finite thickness. The defect shapes can either be in the form of long cracks or rectangular holes. The models offer a choice of exact numerical calculations or fast and intuitive analytical approximations. The experimental measurements of oxygen permeation through four different SiOx/poly (ethylene terephthalate) samples that were strained to produce distributions or cracks showed good agreement when compared with predicted results from the approximate analytic model. As a consequence of this observation, a key practical conclusion is that, because of the logarithmic dependence of transmission on the width of a crack, for a given strain it is better to have a small number of large cracks rather than a large number of small cracks. (C) 2001 Elsevier Science B.V. All rights reserved.

Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation

This article proposes a more accurate approach to dopant extraction using combined inverse modeling and forward simulation of scanning capacitance microscopy (SCM) measurements on p-n junctions. The approach takes into account the essential physics of minority carrier response to the SCM probe tip in the presence of lateral electric fields due to a p-n junction. The effects of oxide fixed charge and interface state densities in the grown oxide layer on the p-n junction samples were considered in the proposed method. The extracted metallurgical and electrical junctions were compared to the apparent electrical junction obtained from SCM measurements. (C) 2002 American Institute of Physics.

Neural Electrode Array Based on Aluminum: Fabrication and Characterization

A unique neural electrode design is proposed with 3 mm long shafts made from an aluminum-based substrate. The electrode is composed by 100 individualized shafts in a 10 × 10 matrix, in which each aluminum shafts are precisely machined via dicing-saw cutting programs. The result is a bulk structure of aluminum with 65 ° angle sharp tips. Each electrode tip is covered by an iridium oxide thin film layer (ionic transducer) via pulsed sputtering, that provides a stable and a reversible behavior for recording/stimulation purposes, a 40 mC/cm2 charge capacity and a 145 Ω impedance in a wide frequency range of interest (10 Hz-100 kHz). Because of the non-biocompatibility issue that characterizes aluminum, an anodization process is performed that forms an aluminum oxide layer around the aluminum substrate. The result is a passivation layer fully biocompatible that furthermore, enhances the mechanical properties by increasing the robustness of the electrode. For a successful electrode insertion, a 1.1 N load is required. The resultant electrode is a feasible alternative to silicon-based electrode solutions, avoiding the complexity of its fabrication methods and limitations, and increasing the electrode performance.

Ageing effects on the wettability behavior of laser textured silicon

In the present work we investigate the ageing of acid cleaned femtosecond laser textured < 100 > silicon surfaces. Changes in the surface structure and chemistry were analysed by Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS), in order to explain the variation with time of the water contact angles of the laser textured surfaces. It is shown that highly hydrophobic silicon surfaces are obtained immediately after laser texturing and cleaning with acid solutions (water contact angle >120 degrees). However these surfaces are not stable and ageing leads to a decrease of the water contact angle which reaches a value of 80 degrees. XPS analysis of the surfaces shows that the growth of the native oxide layer is most probably responsible for this behavior. (C) 2010 Elsevier B.V. All rights reserved.

Optical-geometrical effects on the photoluminescence spectra of Si nanocrystals embedded in SiO2

We demonstrate that thickness, optical constants, and details of the multilayer stack, together with the detection setting, strongly influence the photoluminescence spectra of Si nanocrystals embedded in SiO2. Due to multiple reflections of the visible light against the opaque silicon substrate, an interference pattern is built inside the oxide layer, which is responsible for the modifications in the measured spectra. This interference effect is complicated by the depth dependence of (i) the intensity of the excitation laser and (ii) the concentration of the emitting nanocrystals. These variations can give rise to apparent features in the recorded spectra, such as peak shifts, satellite shoulders, and even splittings, which can be mistaken as intrinsic material features. Thus, they can give rise to an erroneous attribution of optical bands or estimate of the average particle size, while they are only optical-geometrical artifacts. We have analyzed these effects as a function of material composition (Si excess fraction) and thickness, and also evaluated how the geometry of the detection setup affects the measurements. To correct the experimental photoluminescence spectra and extract the true spectral shape of the emission from Si nanocrystals, we have developed an algorithm based on a modulation function, which depends on both the multilayer sequence and the experimental configuration. This procedure can be easily extended to other heterogeneous systems.

Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

A microstructural analysis of silicon-on-insulator samples obtained by high dose oxygen ion implantation was performed by Raman scattering. The samples analyzed were obtained under different conditions thus leading to different concentrations of defects in the top Si layer. The samples were implanted with the surface covered with SiO2 capping layers of different thicknesses. The spectra measured from the as-implanted samples were fitted to a correlation length model taking into account the possible presence of stress effects in the spectra. This allowed quantification of both disorder effects, which are determined by structural defects, and residual stress in the top Si layer before annealing. These data were correlated to the density of dislocations remaining in the layer after annealing. The analysis performed corroborates the existence of two mechanisms that generate defects in the top Si layer that are related to surface conditions during implantation and the proximity of the top Si/buried oxide layer interface to the surface before annealing.

Quantitative x-ray photoelectron spectroscopy study of Al/AlOx bilayers

An x-ray photoelectron spectroscopy (XPS) analysis of Nb/Al wedge bilayers, oxidized by both plasma and natural oxidation, is reported. The main goal is to show that the oxidation state¿i.e., O:(oxidize)Al ratio¿, structure and thickness of the surface oxide layer, as well as the thickness of the metallic Al leftover, as functions of the oxidation procedure, can be quantitatively evaluated from the XPS spectra. This is relevant to the detailed characterization of the insulating barriers in (magnetic) tunnel junctions

Hiiliteräspalkin kuitulaserhitsaus

Hitsaavassa teollisuudessa kilpailukyvyn säilyttäminen ja mahdollinen parantaminen edellyttää hitsauksen tehokkuuden nostoa. Laserhitsauksen nopeus, tarkkuus, tasainen laatu ja aikaansaatava syvä tunkeuma ovatkin vakiinnuttaneet menetelmän vankan aseman tehokkaana valmistusmenetelmänä. Sähkön ja heliumin hinnan nousu ovat pakottaneet teollisuuden miettimään entistä tehokkaampien ja ympäristöystävällisempien laserlähteiden hankkimista. Kuitulaserin korkea hyötysuhde, hyvä säteenlaatu, suuri teho ja matalat käyttökustannukset ovat herättäneet kiinnostusta laserhitsaavassa teollisuudessa. Diplomityössä keskityttiin kuitulaserhitsauksen soveltamiseen. Työn tavoitteena oli parantaa kuitulaserhitsausmenetelmän ymmärrystä ja saada käsitys siitä, miten valitaan hitsausparametrien arvot, ja soveltuuko kuitulaser teolliseen tuotantoon. Tutkimuksessa pyrittiin löytämään peruskokeilla optimaaliset hitsausparametrit, joilla syntyy hyvin tunkeutunut, vähän huokosia sisältävä, ja ulkoisesti laadukas hitsi, sekä optimaalinen hitsin tunkeumaprofiili. Lopuksi hitsausparametreja testattiin tuotteen hitsauksessa. Kuitulaser soveltuu erinomaisesti hiiliteräksen hitsaukseen ja hyvin erikoislujien terästen hitsaukseen, kun teräksen hiili- ja rikkipitoisuudet ovat matalia. Sillä on laaja parametrialue. Yleisimmät hitsausvirheet ovat vajaa hitsautumissyvyys ja huokoset. Tässä diplomityössä keskityttiin etsimään yhdelle valmistettavalle tuotteelle optimaaliset kuitulaserhitsausparametrit. Kuitulaserin laser- ja prosessiparametrien vaikutusta hitsiin ei ole juurikaan tutkittu. Diplomityön kokeiden perusteella olisi hyvä tehdä eri materiaalien jatkotutkimusta railonvalmistuksen, kuten liitoksen oksidikerroksen ja ilmaraon sekä suojakaasun, vaikutuksesta hitsiin. Kuitulaserin hyvä säteenlaatu ja muut laser-parametrit ovat tuoneet mukanaan prosessiin uusia ilmiöitä, joita on syytä tutkia lisää.

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions.

We have studied the current transport and electroluminescence properties of metal oxide semiconductor MOS devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole-Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler-Nordheim tunneling. The results suggest that the electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an electroluminescence power efficiency above 10−3%. © 2009 American Institute of Physics. doi:10.1063/1.3213386

Dekontaminointimenetelmien arviointi ja toimintaprosessien tehostaminen Loviisan voimalaitoksella

Tämän diplomityön lähtökohtana oli Loviisan voimalaitoksella 2006 käynnistyneen valvonta-alueen laajennusprojektin (VAJAKO) uudistettavien dekontaminointitilojen tehostaminen. Diplomityössä arvioitiin Loviisan voimalaitoksen dekontaminointikeskuksissa käytössä olevien puhdistusmenetelmien tehokkuutta ja toimivuutta. Tämän lisäksi työssä tutkittiin tarkemmin kahta "uutta" dekontaminointimenetelmää, joista toisen menetelmän toimivuutta kokeiltiin pienimuotoisen kokeen avulla. Dekontaminointimenetelmien arviointi ja toimintaprosessien tehostaminen tehtiin kirjalliseen materiaaliin, käyttäjiltä saatuihin kommentteihin sekä kokeista saatuihin tuloksiin perustuen. Dekontaminointimenetelmien arviointi aloitettiin kirjallisen materiaalin tutustumisella, jonka perusteella valittiin kaksi tarkemmin tutkittavaa menetelmää. Kirjalliseen materiaaliin pohjautuvaa tietoa verrattiin käytännön kokemuksiin vierailemalla mm. Forsmarkin, Oskarshamnin, Olkiluodon ja Ringhalsin ydinvoimalaitoksissa. Työntekijöiltä saatujen tietojen sekä kirjalliseen materiaaliin pohjautuen valittiin toinen tutkituista menetelmistä käytännön kokeeseen. Kokeessa tutkittiin menetelmän toimivuutta mm. dekontaminointituloksen, puhdistusajan ja syntyvän nestemäisen jätteen määrän perusteella. Kokeista saadut tulokset yhdistettiin kirjallisen materiaalin ja käyttäjiltä saatujen kokemusten kanssa yhdeksi kokonaisuudeksi. Työssä tarkasteltiin myös Loviisan voimalaitoksen metalliromujen käsittelyprosessin toimivuutta. Toimivuuden arvioinnissa kiinnitettiin erityistä huomiota syntyperäisen lajittelun parantamiseen, jonka seurauksena puhtaiden metalliromujen dekontaminointitarve vähenee käytännössä.

Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon

High-dose carbon-ion-implanted Si samples have been analyzed by infrared spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy (XPS) correlated with transmission electron microscopy. Samples were implanted at room temperature and 500°C with doses between 1017 and 1018 C+/cm2. Some of the samples were implanted at room temperature with the surface covered by a capping oxide layer. Implanting at room temperature leads to the formation of a surface carbon-rich amorphous layer, in addition to the buried implanted layer. The dependence of this layer on the capping oxide suggests this layer to be determined by carbon migration toward the surface, rather than surface contamination. Implanting at 500°C, no carbon-rich surface layer is observed and the SiC buried layer is formed by crystalline ßSiC precipitates aligned with the Si matrix. The concentration of SiC in this region as measured by XPS is higher than for the room-temperature implantation.

Electroluminescence of silicon- and some metal oxides

In the present work electroluminescence in Si-SiO2 structures has been investigated. Electroluminescence has been recorded in the range of 250-900 nm in a system of electrolyte-insulator-semiconductor at the room temperature. The heating process of electrons in SiO2 was studied and possibility of separation it into two phases has been shown. The nature of luminescence centers and the model of its formation were proposed. This paper also includes consideration of oxide layer formation. Charge transfer mechanisms have been attended as well. The nature of electroluminescence is understood in detail. As a matter of fact, electron traps in silicon are the centers of luminescence. Electroluminescence occurs when electrons move from one trap to another. Thus the radiation of light quantum occurs. These traps appear as a result of the oxide growth. At the same time the bonds deformation of silicon atoms with SiOH groups is not excludes. As a result, dangling bonds are appeared, which are the trapping centers or the centers of luminescence.

Síntese e caracterização de nanocompósitos Ni: SiO2 processados na forma de filmes finos

We have produced nanocomposite films of Ni:SiO2 by an alternative polymeric precursor route. Films, with thickness of ~ 1000 nm, were characterized by several techniques including X-ray diffraction, scanning electron microscopy, atomic force microscopy, flame absorption atomic spectrometry, and dc magnetization. Results from the microstructural characterizations indicated that metallic Ni-nanoparticles with average diameter of ~ 3 nm are homogeneously distributed in an amorphous SiO2 matrix. Magnetization measurements revealed a blocking temperature T B ~ 7 K for the most diluted sample and the absence of an exchange bias suggesting that Ni nanoparticles are free from an oxide layer.