Holographic fabricated photonic-crystal distributed-feedback quantum cascade laser with near-diffraction-limited beam quality

We demonstrate the fabrication and characterization of photonic-crystal distributed-feedback quantum cascade laser emitting at 4.7 mu m. The tilted rectangular-lattice PCDFB structure was defined using a multi-exposure of two-beam holographic lithography. The devices exhibit the near-diffraction-limited beam emission with the full width at half maximum of the far-field divergence angles about 4.5 degrees and 2.5 degrees for stripe widths of 55 mu m and 95 mu m, respectively. Single-mode emission with a side mode suppression ratio of approximate to 20 dB is achieved in the temperature range (80-210 K). The single-facet output power is above 1 W for a 95 mu m x 2.5 mm laser bar at 85 K in pulsed operation. (C) 2009 Optical Society of America

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN.

Ectomycorrhizal symbiosis can enhance plant nutrition through improved access to discrete organic nutrient patches of high resource quality

It is known that roots can respond to patches of fertility; however, root proliferation is often too slow to exploit resources fully, and organic nutrient patches may be broken down and leached, immobilized or chemically fixed before they are invaded by the root system. The ability of fungal hyphae to exploit resource patches is far greater than that of roots due to their innate physiological and morphological plasticity, which allows comprehensive exploration and rapid colonization of resource patches in soils. The fungal symbionts of ectomycorrhizal plants excrete significant quantities of enzymes such as chitinases, phosphatases and proteases. These might allow the organic residue to be tapped directly for nutrients such as N and P. Pot experiments conducted with nutrient-stressed ectomycorrhizal and control willow plants showed that when high quality organic nutrient patches were added, they were colonized rapidly by the ectomycorrhizal mycelium. These established willows (0.5 m tall) were colonized by Hebeloma syrjense P. Karst. for 1 year prior to nutrient patch addition. Within days after patch addition, colour changes in the leaves of the mycorrhizal plants (reflecting improved nutrition) were apparent, and after I month the concentration of N and P in the foliage of mycorrhizal plants was significantly greater than that in non-mycorrhizal plants subject to the same nutrient addition. It seems likely that the mycorrhizal plants were able to compete effectively with the wider soil microbiota and tap directly into the high quality organic resource patch via their extra-radical mycelium. We hypothesize that ectomycorrhizal plants may reclaim some of the N and P invested in seed production by direct recycling from failed seeds in the soil. The rapid exploitation of similar discrete, transient, high-quality nutrient patches may have led to underestimations when determining the nutritional benefits of ectomycorrhizal colonization.

A laser-diode-pumped acoustic-optic Q-switched Nd:YVO4 slab laser with a hybrid resonator

A 32.1 W laser-diode-stack pumped acoustic-optic Q-switched Nd:YVO4 slab laser with hybrid resonator at 1064 nm was demonstrated with the pumping power of 112 W and repetition rate of 40 kHz, the pulse duration was 32.47 ns. The slope efficiency and optical-to-optical efficiency were 37 and 28.7%, respectively. At the repetition rate of 20 kHz and pumping power of 90 W, the average output power and pulse duration were 20.4 W and 20.43 ns, respectively. With the pumping power of 112 W, the beam quality M-2 factors in CW operation were measured to be 1.3 in stable direction and 1.6 in unstable direction.

Modal fields and bending loss analyses of three-layer large flattened mode fibers

Theoretical method to analyze three-layer large flattened mode (LFM) fibers is presented. The modal fields, including the fundamental and higher order modes, and bending loss of the fiber are analyzed. The reason forming the different modal fields is explained and the feasibility to filter out the higher order modes via bending to realize high power, high beam quality fiber laser is given. Comparisons are made with the standard step-index fiber. (c) 2006 Elsevier B.V. All rights reserved.

部分端面抽运板条激光器腔镜倾斜问题研究

部分端面抽运的板条激光器是一种新型固体激光器．配合混合腔可以实现在大功率下保持高光束质量的激光振荡输出。谐振腔的腔镜倾斜是影响激光器输出特性的重要因素，快速傅里叶方法是一种快捷有效的计算方法，利用此方法模拟了腔镜倾斜对近场相位分布和远场光强分布的影响，并分析了光束质量的变化。理论分析表明，腔镜的小角度倾斜对近场相位影响较大，但对远场光强空间分布影响不大；随着倾斜角度不断增大，远场发散角和光束腰宽度也增大，光束质量虽然存在恶化的趋势，但光束质量因子肝值仍然较小，离轴非稳腔仍能保持高光束质量的输出。

新一代大功率固体板条激光器的技术进展

介绍了固体板条激光器为了获得大功率和高光束质量而采用的新技术, 阐述了新一代大功率固体板条激光器的最新进展, 分析了新一代大功率固体板条激光器的技术特点, 并对其应用前景进行了展望。

传导冷却的全固态zigzag板条激光器

报道了激光二极管泵浦的被动传导冷却的Q开关Nd:YAG zigzag 板条激光器，谐振腔采用平平腔和非稳腔。在20Hz运转时，得到脉宽均为10ns的150 mJ，光光效率19%的多模输出和100 mJ、13%光学效率的单模输出，并进行了相关的热效应测试，结果表明该激光器具有效率高、结构紧凑、光束质量好，在空间环境应用具有很好的发展潜力。

The intensity distribution and thermal stability of InnoSlab laser

Partially end-pumped slab laser is an innovative solid state laser, namely InnoSlab. Combining the hybrid resonator with partially end-pumping, the output power can be scaled with high beam quality. In this paper, the output intensity distributions are simulated by coordinate transformation fast Fourier transform (FFT) algorithm, comparing the thermal lens influence. As the simulated curves showed, the output mode is still good when the thermal lens effect is strong, indicating the good thermal stability of InnoSlab laser. Such a new kind of laser can be designed and optimized on the base of this simulation.

新型板条激光器的离轴混合腔模场计算

报道了一种新型双板条离轴混合腔激光器。这种激光器结构通过改变传统的冷却方式和采用特殊的谐振腔设计，将使从第一块介质板条高温一侧出射的激光对称地进入另一块板条的低温一侧，从而可对由于温度分布不均匀造成的波面畸变进行一定程度的自校正，减少热效应的影响，可望提高激光器的输出功率和光束质量。利用快速傅里叶变换（FFT）对这种激光器的近场、远场以及相位等模场特性进行了数值计算。分析了波面畸变对输出光束质量的影响，并与常规双板条激光器进行了比较，结果表明这种新型双板条离轴混合腔激光器可以实现一定程度的波面畸变自补偿，

LD Side-Pumped Passive Mode-Locked TEM00 Nd:YAG Laser Based on SESAM

We report an LD side-pumped continuous-wave passive mode-locked Nd:YAG laser with a Z-type folded cavity based on a semiconductor saturable absorber mirror (SESAM). The average output power 2.95 W of mode-locked laser with electro-optical conversion efficiency of 1.3% and high beam quality (M-x(2) = 1.25 and M-y(2) = 1.22) is achieved. The repetition rate of mode-locked pulse of 88 MHz with pulse energy of 34 nJ is obtained.

Dynamic control of laser-produced proton beams

The emission characteristics of intense laser driven protons are controlled using ultrastrong (of the order of 10(9) V/m) electrostatic fields varying on a few ps time scale. The field structures are achieved by exploiting the high potential of the target (reaching multi-MV during the laser interaction). Suitably shaped targets result in a reduction in the proton beam divergence, and hence an increase in proton flux while preserving the high beam quality. The peak focusing power and its temporal variation are shown to depend on the target characteristics, allowing for the collimation of the inherently highly divergent beam and the design of achromatic electrostatic lenses.

Recent advances in the field of vertical-external-cavity surface-emitting lasers

Vertical-external-cavity surface-emitting lasers (VECSELs) have proved to be versatile lasers which allow for various emission schemes which on the one hand include remarkably high-power multi-mode or single-frequency continuouswave operation, and on the other hand two-color as well as mode-locked emission. Particularly, the combination of semiconductor gain medium and external cavity provides a unique access to high-brightness output, a high beam quality and wavelength flexibility. Moreover, the exploitation of intra-cavity frequency conversion further extends the achievable radiation wavelength, spanning a spectral range from the UV to the THz. In this work, recent advances in the field of VECSELs are summarized and the demonstration of self-mode-locking (SML) VECSELs with sub-ps pulses is highlighted. Thereby, we present studies which were not only performed for a quantum-well-based VECSEL, but also for a quantum-dot VECSEL.

High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 mu m InAs/GaAs quantum-dot (QD) lasers with high characteristic temperature T-0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 mu m and a cavity length of 1200 mu m are fabricated and tested in the pulsed regime under different temperatures. It is found that T-0 of the QD lasers is as high as 532K in the temperature range from 10 degrees C to 60 degrees C. In addition, the aging test for the lasers under continuous wave operation at 100 degrees C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.