A hot channel

This paper studies on-chip communication with non-ideal heat sinks. A channel model is proposed where the variance of the additive noise depends on the weighted sum of the past channel input powers. It is shown that, depending on the weights, the capacity can be either bounded or unbounded in the input power. A necessary condition and a sufficient condition for the capacity to be bounded are presented. © 2007 IEEE.

Review of computational aeroacoustics for application in electronics cooler noise

A review of computational aeroacoustics (CCA) was made for application in electronics cooler noise. Computational aeroacoustics encompasses all numerical methods where the purposes is to predict the noise emissions from a simulated flow. Numerical simulation of the flow inside and around heat sinks and fans can lead to a prediction of the emitted noise while they are still in the design phase. Direct CCA is theoretically the best way to predict flow-based acoustic phenomena numerically. It is typically used only for low-frequency sound prediction. The boundary element method offers low computational cost and does not use a computational grid, but instead use vortex-surface calculations to determine tonal noise. Axial fans are commonly used to increase the airflow and thus the heat transfer over the heat sinks within the computer cases. Very detailed source simulations in the fan and heat sink region coupled with the use of analogy methods could result in excellent simulation results with a reasonable computational effort.

High-power electroabsorption modulator using intrastep quantum well

An electroabsorption modulator using the intrastep quantum well (IQW) active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio elliciency 10 dB/V and low capacitance (< 0.42 pF), with which an ultra high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.

Advances in high power semiconductor diode lasers - art. no. 682402

High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. the latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect,. different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

Effect of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel

The objective of this paper is to investigate the effects of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel. The test section consists of a bottom silicon substrate bonded with a top glass cover. Three consecutive parts of an inlet fluid plenum, a central microchannel and an outlet fluid plenum were etched in the silicon substrate. The central microchannel had a width of 800 mu m and a depth of 30 mu m. Acetone liquid was used as the working fluid. High outlet vapor qualities were dealt with here. The flow pattern consists of a fluid triangle (shrinkage of the liquid films) and a connected long liquid rivulet, which is generated in the central microchannel in the timescale of milliseconds. The peculiar flow pattern is formed due to the following reasons: (1) the liquid rivulet tends to have a large contact area with the top hydrophilic channel surface of the glass cover, but a smaller contact area with the bottom silicon hydrophobic surface. (2) The temperature gradient in the chip width direction at the top channel surface of the glass cover not only causes the shrinkage of the liquid films in the central microchannel upstream, but also attracts the liquid rivulet populated near the microchannel centerline. (3) The zigzag pattern is formed due to the competition between the evaporation momentum forces at the vapor-liquid interfaces and the force due to the Marangoni effect. The former causes the rivulet to deviate from the channel centerline and the latter draws the rivulet toward the channel centerline. (4) The temperature gradient along the flow direction in the central microchannel downstream causes the breakup of the rivulet to form isolated droplets there. (5) Liquid stripes inside the upstream fluid triangle were caused by the small capillary number of the liquid film, at which the large surface tension force relative to the viscous force tends to populate the liquid film locally on the top glass cover surface.

Thermal analysis and test for single concentrator solar cells

A thermal model for concentrator solar cells based on energy conservation principles was designed. Under 400X concentration with no cooling aid, the cell temperature would get up to about 1200℃.Metal plates were used as heat sinks for cooling the system, which remarkably reduce the cell temperature. For a fixed concentration ratio, the cell temperature reduced as the heat sink area increased. In order to keep the cell at a constant temperature, the heat sink area needs to increase linearly as a function of the concentration ratio. GaInP/GaAs/Ge triple-junction solar cells were fabricated to verify the model. A cell temperature of 37℃ was measured when using a heat sink at 400X concentratration.

On Reynolds number and scaling effects in microchannel flows

This paper presents a numerical study of the Reynolds number and scaling effects in microchannel flows. The configuration includes a rectangular, high-aspect ratio microchannel with heat sinks, similar to an experimental setup. Water at ambient temperature is used as a coolant fluid and the source of heating is introduced via electronic cartridges in the solids. Two channel heights, measuring 0.3 mm and 1 mm are considered at first. The Reynolds number varies in a range of 500-2200, based on the hydraulic diameter. Simulations are focused on the Reynolds number and channel height effects on the Nusselt number. It is found that the Reynolds number has noticeable influences on the local Nusselt number distributions, which are in agreement with other studies. The numerical predictions of the dimensionless temperature of the fluid agree fairly well with experimental measurements; however the dimensionless temperature of the solid does exhibit a significant discrepancy near the channel exit, similar to those reported by other researchers. The present study demonstrates that there is a significant scaling effect at small channel height, typically 0.3 mm, in agreement with experimental observations. This scaling effect has been confirmed by three additional simulations being carried out at channel heights of 0.24 mm, 0.14 mm and 0.1 mm, respectively. A correlation between the channel height and the normalized Nusselt number is thus proposed, which agrees well with results presented.

Ein Beitrag zur Modellierung und Simulation von elektromechanischen Systemen

Die in dieser Arbeit durchgeführten Untersuchungen zeigen, daß es möglich ist, komplexe thermische Systeme, unter Verwendung der thermisch-, elektrischen Analogien, mit PSpice zu simulieren. Im Mittelpunkt der Untersuchungen standen hierbei Strangkühlkörper zur Kühlung von elektronischen Bauelementen. Es konnte gezeigt werden,daß alle Wärmeübertragungsarten, (Wärmeleitung, Konvektion und Wärmestrahlung) in der Simulation berücksichtigt werden können. Für die Berechnung der Konvektion wurden verschiedene Methoden hergeleitet. Diese gelten zum einen für verschiedene Kühlkörpergeometrien, wie z.B. ebene Flächen und Kühlrippenzwischenräume, andererseits unterscheiden sie sich, je nachdem, ob freie oder erzwungene Konvektion betrachtet wird. Für die Wärmestrahlung zwischen den Kühlrippen wurden verschiedenen Berechnungsmethoden entwickelt. Für die Simulation mit PSpice wurde die Berechnung der Wärmestrahlung zwischen den Kühlrippen vereinfacht. Es konnte gezeigt werden, daß die Fehler, die durch die Vereinfachung entstehen, vernachlässigbar klein sind. Für das thermische Verhalten einer zu kühlenden Wärmequelle wurde ein allgemeines Modell entworfen. Zur Bestimmung der Modellparameter wurden verschiedene Meßverfahren entwickelt. Für eine im Fachgebiet Elektromechanik entwickelte Wärmequelle zum Test von Kühlvorrichtungen wurde mit Hilfe dieser Meßverfahren eine Parameterbestimmung durchgeführt. Die Erstellung des thermischen Modells eines Kühlkörpers für die Simulation in PSpice erfordert die Analyse der Kühlkörpergeometrie. Damit diese Analyse weitestgehend automatisiert werden kann, wurden verschiedene Algorithmen unter Matlab entwickelt. Es wurde ein Algorithmus entwickelt, der es ermöglicht, den Kühlkörper in Elementarzellen zu zerlegen, die für die Erstellung des Simulationsmodells benötigt werden. Desweiteren ist es für die Simulation notwendig zu wissen, welche der Elementarzellen am Rand des Kühlkörpers liegen, welche der Elementarzellen an einem Kühlrippenzwischenraum liegen und welche Kühlkörperkanten schräg verlaufen. Auch zur Lösung dieser Aufgaben wurden verschiedene Algorithmen entwickelt. Diese Algorithmen wurden zu einem Programm zusammengefaßt, das es gestattet, unterschiedliche Strangkühlkörper zu simulieren und die Simulationsergebnisse in Form der Temperaturverteilung auf der Montagefläche des Kühlkörpers grafisch darzustellen. Es können stationäre und transiente Simulationen durchgeführt werden. Desweiteren kann der thermische Widerstand des Kühlkörpers RthK als Funktion der Verlustleistung der Wärmequelle dargestellt werden. Zur Verifikation der Simulationsergebnisse wurden Temperaturmessungen an Kühlkörpern durchgeführt und mit den Simulationsergebnissen verglichen. Diese Vergleiche zeigen, daß die Abweichungen im Bereich der Streuung der Temperaturmessung liegen. Das hier entwickelte Verfahren zur thermischen Simulation von Strangkühlkörpern kann somit als gut bewertet werden.

Microscale thermal engineering of electronic systems

The electronics industry is encountering thermal challenges and opportunities with lengthscales comparable to or much less than one micrometer. Examples include nanoscale phonon hotspots in transistors and the increasing temperature rise in onchip interconnects. Millimeter-scale hotspots on microprocessors, resulting from varying rates of power consumption, are being addressed using two-phase microchannel heat sinks. Nanoscale thermal data storage technology has received much attention recently. This paper provides an overview of these topics with a focus on related research at Stanford University.

Estudo da moagem de alta energia e sinterização de pós compósitos W-Cu

The Tungsten/copper composites are commonly used for electrical and thermal objectives like heat sinks and lectrical conductors, propitiating an excellent thermal and electrical conductivity. These properties are dependents of the composition, crystallite size and production process. The high energy milling of the powder of W-Cu produces an dispersion high and homogenization levels with crystallite size of W very small in the ductile Cu phase. This work discusses the effect of the HEM in preparation of the W-25Cu composite powders. Three techniques of powder preparation were utilized: milling the dry with powder of thick Cu, milling the dry with powder of fine Cu and milling the wet with powder of thick Cu. The form, size and composition of the particles of the powders milled were observed by scanning electron microscopy (SEM). The X-ray diffraction (XRD) was used to analyse the phases, lattice parameters, size and microstrain of the crystallite. The analyse of the crystalline structure of the W-25Cu powders milled made by Rietveld Method suggests the partial solid solubility of the constituent elements of the Cu in lattice of the W. This analyse shows too that the HEM produces the reduction high on the crystallite size and the increase in the lattice strain of both phases, this is more intense in the phase W

Caracterização de compósitos Nb-20%cu obtidos por moagem de alta energia e sinterizados por fase líquida

In this work, was studied the formation of a composite of the refractory metal niobium with copper, through the process of high-energy milling and liquid phase sintering. The HEM can be used to synthesize composite powders with high homogeneity and fine size particle distribution. It may also produce the solid solubility in immiscible systems such as Nb-Cu, or extend the solubility of systems with limited solubility. Therefore, in the immiscible system Cu-Nb, the high-energy milling was successfully used to obtain the composite powder particles. Initially, the formation of composite particles during the HEM and the effect of preparation technique on the microstructure of the material was evaluated. Four loads of Nb and Cu powders containing 20%wt Cu were synthesized by MAE in a planetary type ball mill under different periods of grinding. The influence of grinding time on the metal particles is evaluated during the process by the withdrawal of samples at intermediate times of milling. After compaction under different forces, the samples were sintered in a vacuum furnace. The liquid phase sintering of these samples prepared by HEM produced a homogeneous and fine grained. The composite particles forming the sintered samples are the addition of a hard phase (Nb) with a high melting point, and a ductile phase (Cu) with low melting point and high thermal and electrical conductivities. Based on these properties, the Nb-Cu system is a potential material for many applications, such as electrical contacts, welding electrodes, coils for generating high magnetic fields, heat sinks and microwave absorbers, which are coupled to electronic devices. The characterization techniques used in this study, were laser granulometry, used to evaluate the homogeneity and particle size, and the X-ray diffraction, in the phase identification and to analyze the crystalline structure of the powders during milling. The morphology and dispersion of the phases in the composite powder particles, as well the microstructures of the sintered samples, were observed by scanning electron microscopy (SEM). Subsequently, the sintered samples are evaluated for density and densification. And finally, they were characterized by techniques of measuring the electrical conductivity and microhardness, whose properties are analyzed as a function of the parameters for obtaining the composite

Estudo numerico da convecção natural e forçada em cavidades tridimensionais

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Controle térmico de componentes eletrônicos com tubos de calor

Pós-graduação em Engenharia Mecânica - FEG

Análise de dissipadores de calor com filmes de diamante CVD

Dissipadores de calor recobertos com filmes de diamante CVD foram desenvolvidos para acoplar a semicondutores, utilizando-se do Laboratório de Deposição de Filmes de Diamante CVD, na UNESP - Campus de Guaratinguetá e o Laboratório de Diamantes da Universidade São Francisco, em Itatiba, SP. Analisou-se o filme de diamante CVD sobre o silício, para emprego como dissipador de calor, porque o filme de diamante CVD pode ter o valor da condutividade térmica até cinco vezes superior ao do cobre e de dez vezes a do alumínio. Os filmes foram obtidos via deposição através de reator de filamento quente, trabalhando-se com vários filamentos retilíneos em paralelo, resultando assim em um processo que visou obter um filme mais uniforme e com grande área de deposição. Os dados para análises da composição química superficial dos filmes foram obtidos por Difração de Raios-X, Dispersão de Energia de Raios-X e para a verificação da morfologia e espessura do filme foi utilizada a Microscopia Eletrônica de Varredura. Para a verificação do comportamento da temperatura sobre o dissipador com o filme de diamante CVD foi utilizada uma câmera de imagem termográfica, marca Fluke, modelo Ti 40 FT. Foram obtidos filmes de 2 e 10 ?m sobre o silício. Estas espessuras ainda não oferecem um desempenho mecânico que o torne autosustentado. Do ponto de vista de desempenho térmico as análises mostraram que, mesmo com pequena espessura, o filme de diamante CVD apresentou bom resultado experimental. Os principais desafios de construção para esse dissipador de calor são a obtenção do filme com espessura acima de um mm e a garantia da qualidade do filme com a repetitividade do processo em cujo caso torna-se necessário definir as dimensões do dissipador antes da deposição do filme.

1000x shadow-free mirror-based Köhler concentrator

A new design for a photovoltaic concentrator, the most recent advance based on the Kohler concept, is presented. The system is mirror-based, and with geometry that guaranties a maximum sunlight collection area (without shadows, like those caused by secondary stages or receivers and heat-sinks in other mirror-based systems). Designed for a concentration of 1000x, this off axis system combines both good acceptance angle and good irradiance uniformity on the solar cell. The advanced performance features (concentration-acceptance products ?CAP- about 0.73 and affordable peak and average irradiances) are achieved through the combination of four reflective folds combined with four refractive surfaces, all of them free-form, performing Köhler integration 2 . In Köhler devices, the irradiance uniformity is not achieved through additional optical stages (TIR prisms), thus no complex/expensive elements to manufacture are required. The rim angle and geometry are such that the secondary stage and receivers are hidden below the primary mirrors, so maximum collection is assured. The entire system was designed to allow loose assembly/alignment tolerances (through high acceptance angle) and to be manufactured using already well-developed methods for mass production, with high potential for low cost. The optical surfaces for Köhler integration, although with a quite different optical behavior, have approximately the same dimensions and can be manufactured with the same techniques as the more traditional secondary optical elements used for concentration (typically plastic injection molding or glass molding).