Growth stress induced tunability of dielectric permittivity in thin films

Stress is inevitable during thin film growth. It is demonstrated here that the growth stress has a significant effect on the dielectric constant of high-k thin films. ZrO2 thin films were deposited on Ge by reactive direct current sputtering. Stress in these films was measured using in-situ curvature measurement tool. The growth stress was tuned from -2.8 to 0.1 GPa by controlling deposition rate. Dielectric permittivity of ZrO2 depends on temperature, phase, and stress. The correct combination of parameters-phase, texture, and stress-is shown to yield films with an equivalent oxide thickness of 8 angstrom. Growth stresses are shown to affect the dielectric constant both directly by affecting lattice parameter and indirectly through the effect on phase stability of ZrO2. (c) 2016 AIP Publishing LLC.

Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by chemical vapor deposition and its gate configuration was changed while determining its transistor characteristics to ensure that the measurements were not a function of different chirality or diameter CNTs. The bottom-gate exposed CNT FET utilized 900 nm SiO2 as the gate insulator. This CNT FET was then covered with TiO2 to form the bottom-gate covered channel CNT FET. Finally, the top-gate CNT FET was fabricated and the device utilized TiO 2 (K ∼ 80, equivalent oxide thickness=0.25 nm) as the gate insulator. Of the three configurations investigated, the top-gate device exhibited best subthreshold slope (67-70 mV/dec), highest transconductance (1.3 μS), and negligible hysteresis in terms of threshold voltage shift. © 2006 American Institute of Physics.

Study of the transmitter antenna gain for intersatellite laser communications

The gain of a transmitter for intersatellite communications is closely related to the performance of all the links. We calculate the transmitter telescope's gain with the help of the rigorous scalar diffraction theory and equivalent optical layout method. Furthermore, a comparison is performed with the conventional imaging method. The results show that the stop inside the telescope can affect the gain of the telescope. Finally, the gain is calculated under the condition of the aberrations. We find that different aberrations cause different effects. (C) 2006 Society of Photo-Optical Instrumentation Engineers.

Study of the transmitter antenna gain for intersatellite laser communications

The gain of a transmitter for intersatellite communications is closely related to the performance of all the links. We calculate the transmitter telescope's gain with the help of the rigorous scalar diffraction theory and equivalent optical layout method. Furthermore, a comparison is performed with the conventional imaging method. The results show that the stop inside the telescope can affect the gain of the telescope. Finally, the gain is calculated under the condition of the aberrations. We find that different aberrations cause different effects. (C) 2006 Society of Photo-Optical Instrumentation Engineers.

一种计算求精网页主题抽取结果的方法

传统的主题抽取方法单纯依靠分析网页内容的来自动获取网页主题,其分析结果并不十分精确.在WWW上,网页之间通过超链接来互相联系,而链接关系紧密的网页趋向于属于同一主题.基于这一思想,本文提出了一种利用Web链接结构信息来对主题抽取结果进行求精的方法,其通过所链接网页对本网页的影响来修正本网页的主题权值.本文还通过一个实际应用例子,分析了这一方法的特点.

Improved Thermal Performance of SOI Using Compound Buried Layer

The buried oxide (BOX) layer in silicon on insulator (SOI) was replaced by a compound buried layer (CBL) containing layers of SiO2, polycrystalline silicon (polysilicon), and SiO2. The undoped polysilicon in the CBL acted as a dielectric with a higher thermal conductivity than SiO2. CBL provides a reduced thermal resistance with the same equivalent oxide thickness as a standard SiO2 buried layer. Thermal resistance was further reduced by lateral heat flow through the polysilicon. Reduction in thermal resistance by up to 68% was observed, dependent on polysilicon thickness. CBL SOI substrates were designed and manufactured to achieve a 40% reduction in thermal resistance compared with an 1.0-μm SiO2 BOX. Power bipolar transistors with an active silicon layer thickness of 13.5 μm manufactured on CBL SOI substrates showed a 5%-17% reduction in thermal resistance compared with the standard SOI. This reduction was dependent on transistor layout geometry. Between 65% and 90% of the heat flow from these power transistors is laterally through the thick active silicon layer. Analysis confirmed that CBL SOI provided a 40% reduction in the vertical path thermal resistance. Devices employing thinner active silicon layers will achieve the greater benefit from reduction in vertical path thermal resistance offered by CBL SOI.

Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Calculating the ocean's mean dynamic topography from a mean sea surface and a geoid

In principle the global mean geostrophic surface circulation of the ocean can be diagnosed by subtracting a geoid from a mean sea surface (MSS). However, because the resulting mean dynamic topography (MDT) is approximately two orders of magnitude smaller than either of the constituent surfaces, and because the geoid is most naturally expressed as a spectral model while the MSS is a gridded product, in practice complications arise. Two algorithms for combining MSS and satellite-derived geoid data to determine the ocean’s mean dynamic topography (MDT) are considered in this paper: a pointwise approach, whereby the gridded geoid height field is subtracted from the gridded MSS; and a spectral approach, whereby the spherical harmonic coefficients of the geoid are subtracted from an equivalent set of coefficients representing the MSS, from which the gridded MDT is then obtained. The essential difference is that with the latter approach the MSS is truncated, a form of filtering, just as with the geoid. This ensures that errors of omission resulting from the truncation of the geoid, which are small in comparison to the geoid but large in comparison to the MDT, are matched, and therefore negated, by similar errors of omission in the MSS. The MDTs produced by both methods require additional filtering. However, the spectral MDT requires less filtering to remove noise, and therefore it retains more oceanographic information than its pointwise equivalent. The spectral method also results in a more realistic MDT at coastlines. 1. Introduction An important challenge in oceanography is the accurate determination of the ocean’s time-mean dynamic topography (MDT). If this can be achieved with sufficient accuracy for combination with the timedependent component of the dynamic topography, obtainable from altimetric data, then the resulting sum (i.e., the absolute dynamic topography) will give an accurate picture of surface geostrophic currents and ocean transports.

Estimation of population growth or decline in genetically monitored populations

This article introduces a new general method for genealogical inference that samples independent genealogical histories using importance sampling (IS) and then samples other parameters with Markov chain Monte Carlo (MCMC). It is then possible to more easily utilize the advantages of importance sampling in a fully Bayesian framework. The method is applied to the problem of estimating recent changes in effective population size from temporally spaced gene frequency data. The method gives the posterior distribution of effective population size at the time of the oldest sample and at the time of the most recent sample, assuming a model of exponential growth or decline during the interval. The effect of changes in number of alleles, number of loci, and sample size on the accuracy of the method is described using test simulations, and it is concluded that these have an approximately equivalent effect. The method is used on three example data sets and problems in interpreting the posterior densities are highlighted and discussed.

Morphometric analysis of aeolian bedforms in the Namib Sand Sea using ASTER data

The ASTER Global Digital Elevation Model (GDEM) has made elevation data at 30 m spatial resolution freely available, enabling reinvestigation of morphometric relationships derived from limited field data using much larger sample sizes. These data are used to analyse a range of morphometric relationships derived for dunes (between dune height, spacing, and equivalent sand thickness) in the Namib Sand Sea, which was chosen because there are a number of extant studies that could be used for comparison with the results. The relative accuracy of GDEM for capturing dune height and shape was tested against multiple individual ASTER DEM scenes and against field surveys, highlighting the smoothing of the dune crest and resultant underestimation of dune height, and the omission of the smallest dunes, because of the 30 m sampling of ASTER DEM products. It is demonstrated that morphometric relationships derived from GDEM data are broadly comparable with relationships derived by previous methods, across a range of different dune types. The data confirm patterns of dune height, spacing and equivalent sand thickness mapped previously in the Namib Sand Sea, but add new detail to these patterns.

A morphometric comparison of the Namib and southwest Kalahari dunefields using ASTER GDEM data

The increased availability of digital elevation models and satellite image data enable testing of morphometric relationships between sand dune variables (dune height, spacing and equivalent sand thickness), which were originally established using limited field survey data. These long-established geomorphological hypotheses can now be tested against very much larger samples than were possible when available data were limited to what could be collected by field surveys alone. This project uses ASTER Global Digital Elevation Model (GDEM) data to compare morphometric relationships between sand dune variables in the southwest Kalahari dunefield to those of the Namib Sand Sea, to test whether the relationships found in an active sand sea (Namib) also hold for the fixed dune system of the nearby southwest Kalahari. The data show significant morphometric differences between the simple linear dunes of the Namib sand sea and the southwest Kalahari; the latter do not show the expected positive relationship between dune height and spacing. The southwest Kalahari dunes show a similar range of dune spacings, but they are less tall, on average, than the Namib sand sea dunes. There is a clear spatial pattern to these morphometric data; the tallest and most closely spaced dunes are towards the southeast of the Kalahari dunefield; and this is where the highest values of equivalent sand thickness result. We consider the possible reasons for the observed differences and highlight the need for more studies comparing sand seas and dunefields from different environmental settings.

In silico identification and characterization of protein-ligand binding sites

Protein–ligand binding site prediction methods aim to predict, from amino acid sequence, protein–ligand interactions, putative ligands, and ligand binding site residues using either sequence information, structural information, or a combination of both. In silico characterization of protein–ligand interactions has become extremely important to help determine a protein’s functionality, as in vivo-based functional elucidation is unable to keep pace with the current growth of sequence databases. Additionally, in vitro biochemical functional elucidation is time-consuming, costly, and may not be feasible for large-scale analysis, such as drug discovery. Thus, in silico prediction of protein–ligand interactions must be utilized to aid in functional elucidation. Here, we briefly discuss protein function prediction, prediction of protein–ligand interactions, the Critical Assessment of Techniques for Protein Structure Prediction (CASP) and the Continuous Automated EvaluatiOn (CAMEO) competitions, along with their role in shaping the field. We also discuss, in detail, our cutting-edge web-server method, FunFOLD for the structurally informed prediction of protein–ligand interactions. Furthermore, we provide a step-by-step guide on using the FunFOLD web server and FunFOLD3 downloadable application, along with some real world examples, where the FunFOLD methods have been used to aid functional elucidation.

Energy-dispersive X-ray fluorescence analysis of a pre-Columbian funerary gold mask from the Museum of Sican, Peru

A funerary gold mask from the Museum of Sican, Ferranafe, Peru was analyzed in 30 different areas using a portable equipment using energy-dispersive X-ray fluorescence. It was deduced from the measurements that the main sheet of the mask and the majority of the pendants have a similar composition and are made of tumbaga, which means a poor gold alloy enriched at the surface by depletion gilding, and have a similar `equivalent` gilding thickness of about 5 mu m. The nose, also on tumbaga, has different composition and a thickness of about 8 mu m. The clamps are on gilded or on silvered copper. The red pigment dispersed on the surface of the mask is cinnabar. Copyright (C) 2009 John Wiley & Sons, Ltd.

Análise de superfícies seletivas de freqüência para aplicações em ondas milimétricas

This work consists in the development of a theoretical and numerical analysis for frequency selective surfaces (FSS) structures with conducting patch elements, such as rectangular patches, thin dipoles and cross dipoles, on anisotropic dielectric substrates. The analysis is developed for millimeter wave band applications. The analytical formulation is developed in the spectral domain, by using a rigorous technique known as equivalent transmission line method, or immitance approach. The numerical analysis is completed through the use of the Galerkin's technique in the Fourier transform domain, using entire-domain basis functions. In the last decades, several sophisticated analytical techniques have been developed for FSS structure applications. Within these applications, it can be emphasized the use of FSS structures on reflecting antennas and bandpass radomes. In the analysis, the scattered fields of the FSS geometry are related to the surface induced currents on the conducting patches. After the formulation of the scattering problem, the numerical solution is obtained by using the moment method. The choice of the basis functions plays a very important role in the numerical efficiency of the numerical method, once they should provide a very good approximation to the real current distributions on the FSS analyzed structure. Thereafter, the dyadic Green's function components are obtained in order to evaluate the basis functions unknown coefficients. To accomplish that, the Galerkin's numerical technique is used. Completing the formulation, the incident fields are determined through the incident potential, and as a consequence the FSS transmission and reflection characteristics are determined, as function of the resonant frequency and structural parameters. The main objective of this work was to analyze FSS structures with conducting patch elements, such as thin dipoles, cross dipoles and rectangular patches, on anisotropic dielectric substrates, for high frequency applications. Therefore, numerical results for the FSS structure main characteristics were obtained in the millimeter wave bando Some of these FSS characteristics are the resonant

Análise espectral de reflectarrays com substratos de duas camadas dielétricas anisotrópicas uniaxiais

Recently, an amazing development has been observed in telecommunication systems. Two good examples of this development are observed in mobile communication and aerospace systems. This impressive development is related to the increasing need for receiving and transmitting communication signals. Particularly, this development has required the study of new antennas and filters. This work presents a fullwave analysis of reflectarrays. The considered structures are composed by arrays of rectangular conducting patches printed on multilayer dieletric substrates, that are mounted on a ground plane. The analysis is developed in the spectral domain, using an equivalent transmission line method in combination with Galerkin method. Results for the reflection coefficient of these structures are presented and compared to those available in the literature. A good agreement was observed. Particularly, the developed analysis uses the transmission lines theory in combination with the incident potentials and the field continuity equations, at the structures interfaces, for obtaining the scattered field components expressions as function of the patch surface currents and of the incident field. Galerkin method is used to determine the unknown coefficients in the boundary value problem. Curves for the reflection coefficient of several reflectarray geometries are presented as function of frequency and of the structural parameters