Theoretical and practical electrical engineering; comprising a course of lectures given at the Bliss Electrical School upon the principles and applications of both direct and alternating current apparatus

Mode of access: Internet.

Circuits and machines in electrical engineering

v. 1. Circuits.--v. 2. Machines.

Theory and application of electrical engineering.

Includes bibliographies.

Practical solution of torsional vibration problems, with examples from marine, electrical, aeronautical, and automobile engineering practice,

"Printed in Great Britain."

Discussion of the precision of measurements : with examples taken mainly from physics and electrical engineering /

Advertising section at the end of the book.

A functional description of the Edvac [an automatically-sequence serial binary electronic digital computer. Final report of work under contract W36-034-ORD-7593 between the Ordinance Department, Department of the Army and the University of Pennsylvania, Moore School of Electrical Engineering.

Errata, as of Apr. 1, 1950 (7 ¹., 2 diagrs.) inserted.

Electronic Education in the Field of Electrical Engineering Disciplines. Combined Didactic Interactive Program System

At present in the educational process of electrical engineering disciplines electronic learning program, providing control over reproductive educational-cognitive activity (the decision of standard problems) and universal modeling program systems, for instance Electronics Workbench, giving a chance of organizing productive, in particular research activity are basically used. However universal modeling program systems can not provide auto control over educational-cognitive activity because of the absence of the feedback with students. The combined didactic interactive program system, providing the closed directed auto control over both the reproductive and productive heuristic educational-cognitive activity of the student is offered.

Hand-in-hand advances in biomedical engineering and sensorimotor restoration.

BACKGROUND: Living in a multisensory world entails the continuous sensory processing of environmental information in order to enact appropriate motor routines. The interaction between our body and our brain is the crucial factor for achieving such sensorimotor integration ability. Several clinical conditions dramatically affect the constant body-brain exchange, but the latest developments in biomedical engineering provide promising solutions for overcoming this communication breakdown. NEW METHOD: The ultimate technological developments succeeded in transforming neuronal electrical activity into computational input for robotic devices, giving birth to the era of the so-called brain-machine interfaces. Combining rehabilitation robotics and experimental neuroscience the rise of brain-machine interfaces into clinical protocols provided the technological solution for bypassing the neural disconnection and restore sensorimotor function. RESULTS: Based on these advances, the recovery of sensorimotor functionality is progressively becoming a concrete reality. However, despite the success of several recent techniques, some open issues still need to be addressed. COMPARISON WITH EXISTING METHOD(S): Typical interventions for sensorimotor deficits include pharmaceutical treatments and manual/robotic assistance in passive movements. These procedures achieve symptoms relief but their applicability to more severe disconnection pathologies is limited (e.g. spinal cord injury or amputation). CONCLUSIONS: Here we review how state-of-the-art solutions in biomedical engineering are continuously increasing expectances in sensorimotor rehabilitation, as well as the current challenges especially with regards to the translation of the signals from brain-machine interfaces into sensory feedback and the incorporation of brain-machine interfaces into daily activities.

Benchmarking project of the Department of Electrical Engineering of Lappeenranta University of Technology

Lappeenrannan teknillisen korkeakoulun sähkötekniikan osasto muutti 1.8.2005 sähkötekniikan tutkinnon kaksiportaiseksi ja vastaamaan näin Bologna-prosessia ja Suomen yliopistolainsäädäntöä. Tutkinnonuudistuksen myötä osasto haluaa varmistaa sähkötekniikan tutkintojen laadun ja vertailtavuuden sekä parantaa opiskelijoidensekä henkilökunnan liikkuvuutta. Tutkintojen laatu ja vertailtavuus osoitetaan sähkötekniikan osaston benchmark-projektilla, jossa kerätään tietoja maisteri- ja tohtorintutkintoa tarjoavista eurooppalaisista yliopistoista. Diplomityö käsittää BM-projektin kolmannen vaiheen suunnittelun ja toteutuksen sisältäen teoriaa benchmark-projekteille tyypillisistä toimintatavoista. Hyväksi havaitut menetelmiä, kuten kyselyt ja matriisit, on tässä työssä otettu soveltuvin osin sähkötekniikan osaston BM-projektin työkaluiksi. Diplomityössä analysoidaan työkalujen avulla BM-kumppaneilta kerättyjä tietoja sekä esitetään ratkaisuja, miten sähkötekniikan osastolla voidaan jatkaa parhaiden toimintatapojen löytämistä.

Thermal Impacts on Building Integrated Photovoltaic (BIPV) (Electrical, Thermal and Mechanical Characteristics)

Ein Drittel des weltweiten gesamten Energiebedarfs wird durch Gebäude verbraucht. Um diesen Energiebedarf teilweise zu decken, den erheblichen Energieverbrauch zu reduzieren und weiterhin andere Gebäudefunktionen beizubehalten, ist Gebäudeintegrierte Photovoltaik (BIPV) eine der am besten geeigneten Lösungen für die Gebäudenanwendung. Im Bezug auf eine Vielzahl von Gestalltungsmöglichkeiten, sind die Randbedingungen der BIPV-Anwendungen eindeutig anders im Vergleich zu Standard-PV-Anwendungen, insbesondere bezüglich der Betriebstemperatur. Bisher gab es nicht viele Informationen zu den relevanten thermischen Auswirkungen auf die entsprechenden elektrischen Eigenschaften zusammen mit thermischen und mechanischen relevanten Gebäudenfunktionen. Die meisten Hersteller übernehmen diese Eigenschaften von entsprechenden PV-Modulen und konventionellen Bauprodukten Normen, die zur ungenauen System- und Gebäudeplanungen führen. Deshalb ist die Untersuchung des thermischen Einflusses auf elektrische, thermische sowie mechanische Eigenschaften das Hauptziel der vorliegenden Arbeit. Zunächst wird das Temperatur-Model mit dem Power-Balance-Konzept erstellt. Unter Berücksichtigung der variablen Installationsmöglichkeiten und Konfigurationen des Moduls wird das Model auf Basis dynamischer und stationär Eigenschaften entwickelt. Im Hinblick auf die dynamische Simulation können der Energieertrag und Leistung zusammen mit der thermischen Gebäudesimulation in Echtzeit simuliert werden. Für stationäre Simulationen können die relevanten Gebäudefunktionen von BIPV-Modulen sowohl im Sommer als auch im Winter simuliert werden. Basierend auf unterschiedlichen thermischen und mechanischen Last-Szenarien wurde darüber hinaus das mechanische Model zusammen mit Variationen von Belastungsdauer, Montagesystem und Verkapselungsmaterialien entwickelt. Um die Temperatur- und Mechanik-Modelle zu validieren, wurden die verschiedenen Prüfeinrichtungen zusammen mit neuen Testmethoden entwickelt. Bei Verwendung der Prüfanlage „PV variable mounting system“ und „mechanical testing equipment“ werden zudem die verschiedenen Szenarien von Montagesystemen, Modul-Konfigurationen und mechanischen Belastungen emuliert. Mit der neuen Testmethode „back-bias current concept“ können zum einen die solare Einstrahlung und bestimmte Betriebstemperaturen eingestellt werden. Darüber hinaus wurden mit den eingangs erwähnten validierten Modellen das jeweilige elektrische, thermische und mechanische Verhalten auf andere Konfigurationen bewertet. Zum Abschluss wird die Anwendung von Software-Tools bei PV-Herstellern im Hinblick auf die entsprechenden Modellentwicklungen thematisiert.

Integrating control and electronics

Previously the author described how control engineering can be introduced using little mathematics in a first year course, the aim being to make the subject accessible across different degrees. One reaction to this was that it was a good idea, but there was not space to include it in the curriculum where, typically control engineering is not introduced until the second year. This paper describes how the author has used a review of the first year teaching to develop a module in which feedback, control and electronics are integrated coherently. This is beneficial as concepts in control and electronics mutually reinforce each other. This has been achieved during a reduction in the available time for teaching the material. This paper describes the strategy used to successfully develop the module, the integrated module and positive student reaction.

The oscillatory bioelectrical signal from plants explained by a simulated electrical model and tested using Lempel-Ziv complexity

This paper demonstrates the oscillatory characteristics of electrical signals acquired from two ornamental plant types (Epipremnum pinnatum and Philodendron scandens - Family Araceae), using a noninvasive acquisition system. The electrical signal was recorded using Ag/AgCl superficial electrodes inside a Faraday cage. The presence of the oscillatory electric generator was shown using a classical power spectral density. The Lempel and Ziv complexity measurement showed that the plant signal was not noise despite its nonlinear behavior. The oscillatory characteristics of the signal were explained using a simulated electrical model that establishes that for a frequency range from 5 to 15 Hz, the oscillatory characteristic is higher than for other frequency ranges. All results show that non-invasive electrical plant signals can be acquired with improvement of signal-to-noise ratio using a Faraday cage, and a simple electrical model is able to explain the electrical signal being generated. (C) 2010 Elsevier B.V. All rights reserved.

Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

In situ real-time investigation of Organic Ultra-Thin-Film transistors: growth, electrical properties and biosensing applications

Organic electronics has grown enormously during the last decades driven by the encouraging results and the potentiality of these materials for allowing innovative applications, such as flexible-large-area displays, low-cost printable circuits, plastic solar cells and lab-on-a-chip devices. Moreover, their possible field of applications reaches from medicine, biotechnology, process control and environmental monitoring to defense and security requirements. However, a large number of questions regarding the mechanism of device operation remain unanswered. Along the most significant is the charge carrier transport in organic semiconductors, which is not yet well understood. Other example is the correlation between the morphology and the electrical response. Even if it is recognized that growth mode plays a crucial role into the performance of devices, it has not been exhaustively investigated. The main goal of this thesis was the finding of a correlation between growth modes, electrical properties and morphology in organic thin-film transistors (OTFTs). In order to study the thickness dependence of electrical performance in organic ultra-thin-film transistors, we have designed and developed a home-built experimental setup for performing real-time electrical monitoring and post-growth in situ electrical characterization techniques. We have grown pentacene TFTs under high vacuum conditions, varying systematically the deposition rate at a fixed room temperature. The drain source current IDS and the gate source current IGS were monitored in real-time; while a complete post-growth in situ electrical characterization was carried out. At the end, an ex situ morphological investigation was performed by using the atomic force microscope (AFM). In this work, we present the correlation for pentacene TFTs between growth conditions, Debye length and morphology (through the correlation length parameter). We have demonstrated that there is a layered charge carriers distribution, which is strongly dependent of the growth mode (i.e. rate deposition for a fixed temperature), leading to a variation of the conduction channel from 2 to 7 monolayers (MLs). We conciliate earlier reported results that were apparently contradictory. Our results made evident the necessity of reconsidering the concept of Debye length in a layered low-dimensional device. Additionally, we introduce by the first time a breakthrough technique. This technique makes evident the percolation of the first MLs on pentacene TFTs by monitoring the IGS in real-time, correlating morphological phenomena with the device electrical response. The present thesis is organized in the following five chapters. Chapter 1 makes an introduction to the organic electronics, illustrating the operation principle of TFTs. Chapter 2 presents the organic growth from theoretical and experimental points of view. The second part of this chapter presents the electrical characterization of OTFTs and the typical performance of pentacene devices is shown. In addition, we introduce a correcting technique for the reconstruction of measurements hampered by leakage current. In chapter 3, we describe in details the design and operation of our innovative home-built experimental setup for performing real-time and in situ electrical measurements. Some preliminary results and the breakthrough technique for correlating morphological and electrical changes are presented. Chapter 4 meets the most important results obtained in real-time and in situ conditions, which correlate growth conditions, electrical properties and morphology of pentacene TFTs. In chapter 5 we describe applicative experiments where the electrical performance of pentacene TFTs has been investigated in ambient conditions, in contact to water or aqueous solutions and, finally, in the detection of DNA concentration as label-free sensor, within the biosensing framework.