Theoretical modelling of the effect of photon lifetime on the output dynamics of Er-doped distributed feedback fibre lasers

By employing a simple model of describing three-level lasers, we have theoretically investigated the effect of photon lifetime on the output dynamics of Er-doped distributed feedback fibre lasers. And based on the theoretical analysis we have proposed a promising method to suppress self-pulsing behaviour in the fibre lasers.

Optical properties of zirconia-titania-ORMOSIL films for temperature tuning distributed feedback waveguide lasers

The zirconia-titania-ORMOSIL waveguide thin films with considerable optical quality were prepared by the sol-gel process. The refractive index (n) and the extinction coefficient (k) were determined by a scanning ellipsometer. Wavelength tunable output of distributed feedback waveguide lasing was demonstrated in Rhodamine 6G doped ZrO2 TiO2-ORMOSIL thin films by varying the temperature, and about 5.5 nm wavelength tuning range was achieved around the emission wavelength of 599 nm. The thermal-optic coefficient (dn/dT) of the active ZrO2-TiO2-ORMOSIL films was deduced. (c) 2005 Elsevier B.V. All rights reserved.

Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology

In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technology to be a possible method for monolithic integration, in that its fabrication is as powerful as electron beam technology and the cost and time-consuming are almost the same as standard holographic technology. (C) 2009 Optical Society of America

Unselective regrowth of 1.5-mu m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers

Unselective regrowth for fabricating 1.5-mu m InGaAsP multiple-quantum well (MQW) distributed-feedback (DFB) buried heterostructure (BH) lasers is developed. The experimental results exhibit superior characteristics, such as a low threshold of 8.5 mA, high slope efficiency of 0.55 mW/mA, circular-like far-field patterns, the narrow line-width of 2.5 MHz, etc. The high performance of the devices effectively proves the feasibility of the new method to fabricate buried heterostructure lasers. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Small-divergence singlemode emitting tapered distributed-feedback quantum cascade lasers

A tapered distributed feedback quantum cascade laser emitting at lambda similar to 8.1 mu m is reported. Utilising a tapered waveguide structure with a surface metal grating, the device exhibited singlemode operation over the temperature range of 100 to 214 K, with sidemode suppression ratio > 20 dB and a nearly diffraction limited far-field beam divergence angle of 5.4 degrees.

1.78 μm Strained InGaAs-InGaAsP-InP Distributed Feedback Quantum Well Lasers

Ridge-waveguide distributed-feedback(DFB) lasers with highly strained InGaAs/InGaAsP active regions,emitting at 1.78 μm were fabricated by low pressure metal-organic vapor phase epitaxy(LP-MOVPE) and tested.The lasers exhibited threshold current of 33 mA for 900 μm long cavities at room temperature.A maximum light output power of 8 mW from one facet and an external differential quantum efficiency of 7% were also obtained.In oddition,the side mode suppression ratio (SMSR) is 27.5 dB.

Power optimization of random distributed feedback fiber lasers

We present a comprehensive study of power output characteristics of random distributed feedback Raman fiber lasers. The calculated optimal slope efficiency of the backward wave generation in the one-arm configuration is shown to be as high as ∼90% for 1 W threshold. Nevertheless, in real applications a presence of a small reflection at fiber ends can appreciably deteriorate the power performance. The developed numerical model well describes the experimental data. © 2012 Optical Society of America.

Power and spectral optimization of random distributed feedback fiber lasers

We present the optimization of power and spectral performances of the random DFB fiber laser using the balance equation set. The numerical results are in good in agreement with experiments. © 2012 OSA.

Effect of Rayleigh-scattering distributed feedback in multi-wavelength and tunable Raman fibre lasers

We have demonstrated that a random distributed feedback based on the Rayleigh scattering provides very flat power-versus-wavelength characteristics both in tunable and multiwavelength ultra-long fibre lasers. © 2011 Optical Society of America.

Raman fiber lasers with a random distributed feedback based on Rayleigh scattering

We demonstrate lasing based on a random distributed feedback due to the Raman amplified Rayleigh backscattering in different types of cavities with and without conventional point-action reflectors. Quasistationary generation of a narrowband spectrum is achieved despite the random nature of the feedback. The generated spectrum is localized at the reflection or gain spectral maxima in schemes with and without point reflectors, respectively. The length limit for a conventional cavity and the minimal pump power required for the lasing based purely on a random distributed feedback are determined. © 2010 The American Physical Society.

Design and development of distributed feedback transistor lasers

The transistor laser is a unique three-port device that operates simultaneously as a transistor and a laser. With quantum wells incorporated in the base regions of heterojunction bipolar transistors, the transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and electrical-optical characteristics for direct “read-out” of its optical properties. These devices have demonstrated many useful features such as high-speed optical transmission without the limitations of resonance, non-linear mixing, frequency multiplication, negative resistance, and photon-assisted switching. To date, all of these devices operate as multi-mode lasers without any type of wavelength selection or stabilizing mechanisms. Stable single-mode distributed feedback diode laser sources are important in many applications including spectroscopy, as pump sources for amplifiers and solid-state lasers, for use in coherent communication systems, and now as TLs potentially for integrated optoelectronics. The subject of this work is to expand the future applications of the transistor laser by demonstrating the theoretical background, process development and device design necessary to achieve singlelongitudinal- mode operation in a three-port transistor laser. A third-order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength of 959.75 nm and threshold current of 13 mA operating at -70 °C. For devices with cleaved ends a side-mode suppression ratio greater than 25 dB has been achieved.

Photonic crystal distributed feedback quantum cascade laser fabricated with holographic technique

Electrically pumped, edge-emitting, singlemode operation of a two-dimensional photonic crystal distributed feedback (PCDFB) quantum cascade laser emitting at similar to 7.8 mu m is demonstrated. The two-beam holographic technique combined with wet-etching process is successfully used to de. ne a square-lattice PCDFB structure on the top grating layer of the laser. This simple PC fabrication method may open exciting opportunities for the wide application of PCDFB lasers.

A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode

A 1.3-mu m AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T-0 = 90K between 20-80 degrees C) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80 degrees C) in 1.3 mu m AlGaInAs/InP DFB lasers was obtained by introducing AI(Ga)InAs graded-index separate-confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).

Stable single-mode distributed feedback quantum cascade laser with surface metal grating

A design of single-mode distributed feedback quantum cascade lasers (DFB-QCLs) with surface metal grating is described. A rigorous modal expansion theory is adopted to analyse the interaction between the waveguide mode and the surface plasmon wave for different grating parameters. A stable single-mode operation can be obtained in a wide range of grating depths and duty cycles. The single-mode operation of surface metal grating DFB-QCLs at room temperature for lambda = 8.5 mu m is demonstrated. The device shows a side-mode suppression ratio of above 20 dB. A linear tuning of wavelength with temperature indicates the stable single-mode operation without mode hopping.