Optimised crystal morphologies for active pharmaceutical ingredients and related studies

The majority of active pharmaceutical ingredients (APIs) are crystalline solids in their pure forms. Crystalline solids have definable morphologies, i.e. shape and size. Crystal morphology is determined by both the internal structure of the crystals and external factors during growth from solution. The morphology of a crystal batch can affect key processes during manufacturing. Companies generally accept whatever morphology the manufacturing process provides and deal with any subsequent problems by costly trouble‒shooting. Rational design of optimised morphologies for crystalline pharmaceutical solids would be a very significant technical and commercial advance. Chapter one introduces the concept of crystal nucleation and growth. The phenomenon of polymorphism alongside the causes and impact is discussed. A summary of the scope of instrumentation used in the investigation of crystal polymorphism and morphology, including crystal size distribution (CSD), is also included. Chapter two examines the research carried out during an exploration of the optimum crystallisation parameters of phenacetin. Following a morphological study, the impact this induces on particle density and flow properties is examined. The impact of impurities on the crystallisation properties of phenacetin is investigated. Significantly, the location of impurities within individual crystals is also studied. The third chapter describes an industrial collaboration looking at the resolution and polymorphic study of trometamol and lysine salts of ketoprofen and 2‒phenylpropionic acid (2‒PPA). Chapter four incorporates a solid state study on three separate compounds: 2‒chloro‒4‒nitroaniline, 4‒hydroxy‒N‒phenylbenzenesulfonamide and N‒acetyl‒D‒glucosamine‒6‒O‒sulfate. 2‒Chloro‒4‒nitroaniline and 4‒hydroxy‒N‒phenylbenzenesulfonamide both produced interesting, extreme morphologies which warranted further investigation as part of a collaborative study. Following a summarisation of results in chapter five, chapter six contains the full experimental details, incorporating spectral and other analytical data for all compounds synthesised during the course of the research.

Single crystal CVD diamond growth strategy by the use of a 3D geometrical model: Growth on (113) oriented substrates

The quality of single crystal diamond obtained by microwave CVD processes has been drastically improved in the last 5 years thanks to surface pretreatment of the substrates [A. Tallaire, J. Achard, F. Silva, R.S. Sussmann, A. Gicquel, E. Rzepka, Physica Status Solidi (A) 201, 2419-2424 (2004); G. Bogdan, M. Nesladek, J. D'Haen, J. Maes, V.V. Moshchalkov, K. Haenen, M. D'Olieslaeger, Physica Status Solidi (A) 202, 2066-2072 (2005); M. Yamamoto, T. Teraji, T. Ito, Journal of Crystal Growth 285, 130-136 (2005)]. Additionally, recent results have unambiguously shown the occurrence of (110) faces on crystal edges and (113) faces on crystal corners [F. Silva, J. Achard, X. Bonnin, A. Michau, A. Tallaire, O. Brinza, A. Gicquel, Physica Status Solidi (A) 203, 3049-3055 (2006)]. We have developed a 3D geometrical growth model to account for the final crystal morphology. The basic parameters of this growth model are the relative displacement speeds of (111), (110) and (113) faces normalized to that of the (100) faces, respectively alpha, beta, and gamma. This model predicts both the final equilibrium shape of the crystal (i.e. after infinite growth time) and the crystal morphology as a function of alpha, beta, gamma, and deposition time.

An optimized operating point, deduced from the model, has been validated experimentally by measuring the growth rate in (100), (111), (110), and (113) orientations. Furthermore, the evolution of alpha, beta, gamma as a function of methane concentration in the gas discharge has been established. From these results, crystal growth strategies can be proposed in order, for example, to enlarge the deposition area. In particular, we will show, using the growth model, that the only possibility to significantly increase the deposition area is, for our growth conditions, to use a (113) oriented substrate. A comparison between the grown crystal and the model results will be discussed and characterizations of the grown film (Photoluminescence spectroscopy, EPR, SEM) will be presented. (C) 2008 Elsevier B.V. All rights reserved.

Liquid phase epitaxy of Al0.3Ga0.7As islands

Self-organized Al0.3Ga0.7As islands generated on the (100) facet are achieved by liquid phase epitaxy. Three particularly designed experimental conditions-partial oxidation, deficient solute and air quenching-result in defect-free nucleation. Micron-sized frustums and pyramids are observed by a scanning electron microscope. The sharp end of the tip has a radius of curvature less than 50 nm. It is proposed that such Al0.3Ga0.7As islands may be potentially serviceable in microscale and nanoscale fabrication and related spheres. (C) 2004 Elsevier B.V. All rights reserved.

Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD

We have studied the effect of low-temperature-deposited (LT) and high-temperature-deposited (FIT) AlN interlayer with various thickness on AlGaN film grown on GaN using c-plane sapphire as substrate. All the Al0.25Ga0.75N films thicker than 1 mum with LT-AlN interlayer or with HT-AlN interlayer were free of cracks, however, their surfaces were different: the Al0.25Ga0.75N films with LT-AlN interlayer showed smooth surface, while those with HT-AlN interlayer exhibit rough surface morphology. The results of X-ray double crystal diffraction and Rutherford backscattering showed that all of the AlGaN films were under compressive strain in the parallel direction. The compressive strain resulted from the effect of interlayer-induced stress relieving and the thermal mismatch for the samples with LT-AlN interlayer, and it was due to the thermal mismatch between AlGaN and the underlying layers for those with HT-AlN interlayer. (C) 2004 Elsevier B.V. All rights reserved.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

Enhanced crystallization of the gamma-form of propylene-ethylene copolymer in its miscible blends with propylene homopolymer

BACKGROUND: How to promote the formation of the gamma-form in a certain propylene-ethylene copolymer (PPR) under atmospheric conditions is significant for theoretical considerations and practical applications. Taking the epitaxial relationship between the alpha-form and gamma-form into account, it is expected that incorporation of some extrinsic alpha-crystals, developed by propylene homopolymer (PPH), can enhance the crystallization of the gamma-form of the PPR component in PPR/PPH blends.RESULTS: The PPH component in the blends first crystallizes from the melt, and its melting point and crystal growth rate decrease with increasing PPR fraction. On the other hand, first-formed alpha-crystals of the PPH component can induce the lateral growth of PPR chains on themselves, indicated by sheaf-like crystal morphology and positive birefringence, which is in turn responsible for enhanced crystallization of the gamma-form of the PPR component.

Study on crystallization of poly(epsilon-caprolactone) in poly(epsilon-caprolactone)/poly(vinyl methyl ether) blends

The crystallization behaviors of poly( E-caprolactone) (PCL) in poly(epsilon-caprolactone) (PCL) and poly(vinyl methyl ether) (PVME) blends were investigated by POM, DSC, WAXD, SAXS. POM results indicated that spherical crystal morphology was present during isothermal process, and the spheric growth rates were reduced with increasing the contents of PVME in PCL/PVME blends. It was found that the crystallinity of PCL in the blends remained almost constant regardless of the blend composition, but it was dependent on preparation technique. Solution-crystallization was found to be a technique capable of increasing crystallinity levels for some compositions. The melting behavior of the blends is a rather complex process. Both solution-crystallized samples and isothermal-crystallized samples exhibited a single endotherm. Oppositely, melting-crystallized samples exhibited dual-melting endotherms whose mangnitudes vary with blend compositions. On the basis of WAXD and SAXS experiments, it is found that the crystal structure is unchanged, but the long period increases with increasing the content of PVME because of the thickening of the amorphous layers.

Structural analysis of PEKEKK(T/I) using WAXD, imaging plates and SAXS

Structures and crystal form transition of the novel aryl ether ketone polymer containing meta-phenylene linkage: PEKEKK(T/I) were investigated by wide angle X-ray diffraction (WAXD), imaging plates (IPs) and small angle X-ray scattering (SAXS). The energy of activation of the decomposition reaction and degree of crystallinity of PEKEKK(T/I) were determined by WAXD and thermo-gravimetric analysis (TGA), respectively. Results obtained from WAXD and IPs show that crystal forms I and II coexist in the PEKEKK(T/I) samples isothermally cold crystallized in the temperature range from 180degreesC to 240degreesC and only form I occurs in PEKEKK(T/I) samples isothermally cold crystallized at 270degreesC. The radius of gyration (Rg), thickness of microregions with electron-density fluctuations (E) and distribution of particle sizes were investigated by SAXS.

Polydispersity of ethylene sequence length in metallocene ethylene/alpha-olefin copolymers. I. Characterized by thermal-fractionation technique

In this article, the polydispersity of the ethylene sequence length (ESL) in ethylene/alpha-olefin copolymers was studied by atomic force microscopy (AFM) and the thermal-fractionation technique. The crystal morphology observation by AFM showed that morphology changed gradually with decreasing average ESL from complete lamellae over shorter and more curved lamellae to a granular-like morphology, and the mixed morphology was observed after stepwise crystallization from phase-separated melt. This result indicated that the ethylene sequence with different lengths crystallized into a crystalline phase with a different size and stability at the copolymer systems. The thermal-fractionation technique was used to characterize the polydispersity of ESL. Three of the following statistical terms were introduced to describe the distribution of ESL and the lamellar thickness: the arithmetic mean (L) over bar (n), the weight mean (L) over bar (w), and the broadness index I = (L) over bar (w)/(L) over bar (n). It was concluded that the polydispersity of ESL could be quantitatively characterized by the thermal-fractionation technique. The effects of temperature range, temperature-dependent specific heat capacity C-p of copolymer, and the molecular weight on the results of thermal fractionation were discussed,

Effect of LB monolayers on the mixed crystals of Lead and barium sulfate

The effect of LB monolayers on the mixed crystal was investigated by using X-ray photoelectron spectroscopy (XPS), Transmission electron microscopy (TEM), and Inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The results show that LB monolayer has selectivity for the different nucleation ions with equal charge numbers and about the same ion radius. The selectivity is dependent on the head groups of monolayer. The monolayer and the doped ions have also an effect on the crystal morphology. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Synthesis and crystallization of a novel poly(ether ketone ether ketone ketone) containing meta-phenylene linkage: PEKEKK(T/I)

Poly(ether ketone ether ketone ketone) containing meta-phenylene linkage (PEKEKK(T/I)) was synthesized by electrophilic Friedel-Crafts acylation condensation of 1, 4-diphenoxybenzophenone with terephthaloyl chloride (T) and isophthaloyl chloride (I) with a T/I ratio of 1 and characterized by LR,DSC,TGA and WAXD. PEKEKK(T/I) has two different crystal structures: a conventional Farm I structure, the same as that observed in PEEK and PEK, wich is usually developed from melt crystallization, and a new Form II structure which can be developed from cold crystallization or solvent induced crystallization (by exposing the glassy sample to methylene chloride).

A study of the crystallographic equivalence of ether and ketone groups in poly(aryl ether ketone)s

Crystallographic equivalence of ether and ketone in all para-substituted PAEKs crystallized in form I was discussed in this paper. In a word, crystallographic equivalence between ether and ketone groups is tenable when polymer contains only phenyl rings in the repeat unit. If a polymer contains a diphenyl group in the repeat unit, two cases should be distinguished. In the case of PEDEKK and PEEKDK, crystallographic equivalence between ether and ketone linkages is untenable, However, in the case of PEDK and PEDEKDK, crystallographic equivalence between ether and ketone linkages is still tenable.

Isothermal and nonisothermal crystallization of poly(aryl ether ketone ketone) with all-para phenylene linkage

Isothermal and nonisothermal crystallization behavior for PEKK(T) was studied using differential scanning calorimetry (DSC), transmission electron microscopy (TEM), and electron diffraction (ED). In the isothermal crystallization process, the Avrami parameters obtained were n = 2.33-2.69, which shows crystal growth of two-dimensional extensions consistent with our observations by TEM. The lamellar thickness increases with the crystallization temperature of PEKK(T) crystallized isothermally from the melt. However, for the nonisothermal crystallization of PEKK(T), the results from the modified Avrami analysis show two different crystallization processes. Avrami exponents n(1) = 3.61-5.30, obtained from the primary crystallization process, are much bigger than are the secondary n(2) = 2.26-3.04 and confirmed by the observation of the spherulite morphology. PEKK(T) crystallized isothermally from the melt possesses the same crystal structure (Form I) as that from nonisothermal melt crystallization. The results from TEM observation show that the spherulite radius decreases with an increasing cooling rate. (C) 2001 John Wiley & Sons, Inc.