All electron fully relativistic Dirac-Fock calculation for darmstadtium carbide using prolapse free basis set

For the first time, ab inito all electron fully relativistic and correlated Dirac-Fock calculations with prolapse free basis set are reported for a Super Heavy Element. We investigated the relativistic effects on bonding and on some spectroscopic constants for the darmstadtium carbide and our results at DF/CCSD(T) with a prolapse free basis set suggest for R-e, omega(e) and D-e the values of 174 pm, 1114 cm(-1) and 7.29 eV, respectively. These values are very similar to the values for PtC found on literature. It was also found that prolapse free basis set may be important to estimate the dissociation energy using Relativistic 4-components correlated methods. (c) 2007 ELsevier B.V. All rights reserved.

Effects of tungsten carbide thermal spray coating by HP/HVOF and hard chromium electroplating on AISI 4340 high strength steel

In cases of decorative and functional applications, chromium results in protection against wear and corrosion combined with chemical resistance and good lubricity. However, pressure to identify alternatives or to improve conventional chromium electroplating mechanical characteristics has increased in recent years, related to the reduction in the fatigue strength of the base material and to environmental requirements. The high efficiency and fluoride-free hard chromium electroplating is an improvement to the conventional process, considering chemical and physical final properties. One of the most interesting, environmentally safer and cleaner alternatives for the replacement of hard chrome plating is tungsten carbide thermal spray coating, applied by the high velocity oxy-fuel (HVOF) process. The aim of this study was to analyse the effects of the tungsten carbide thermal spray coating applied by the HP/HVOF process and of the high efficiency and fluoride-free hard chromium electroplating (in the present paper called 'accelerated'), in comparison to the conventional hard chromium electroplating on the AISI 4340 high strength steel behaviour in fatigue, corrosion, and abrasive wear tests. The results showed that the coatings were damaging to the AISI 4340 steel behaviour when submitted to fatigue testing, with the tungsten carbide thermal spray coatings showing the better performance. Experimental data from abrasive wear tests were conclusive, indicating better results from the WC coating. Regarding corrosion by salt spray test, both coatings were completely corroded after 72 h exposure. Scanning electron microscopy technique (SEM) and optical microscopy were used to observe crack origin sites, thickness and adhesion in all the coatings and microcrack density in hard chromium electroplatings, to aid in the results analysis. © 2001 Elsevier Science B.V. All rights reserved.

Recycling of silicon carbide and corn starch as binder originating from commercial starch consolidation

The main goal of this work is to demonstrate that the use of recycled material originated from SiC ceramics is viable. These ceramics were produced by commercial starch consolidation process. Before calcination stage, surplus of these materials always appears. This surplus is rich in SiC and starch. Samples were made by material previously milled in automatic mortar and sieved (100 Tyler). Later, 10% of distilled water was added to the material and the mixture was pressed at 40 MPa. In order to characterize the ceramic, three point flexural test were made, according to the ASTM C1161/94 norm. The results were analyzed by Weibull statistical method. Apparent density and porosity measures also were made, according to ASTM C20/87 norm. A verification of the surface was made in the fracture area by the depth from focus method and SEM image analysis. The results showed that the recycling process is fully viable, being a good economic option and reduce possible pollutant effect to the environment.

Development of silicon carbide substrates for aerospace applications

Payload and high-tech are important characteristics when the goals are aerospace applications. The development of the technologies associated to these applications has interests that transcend national boundaries and are of strategic importance to the nations. Ultra lightweight mirrors, supports and structures for optical systems are important part of this subject. This paper reports the development of SiC substrates, obtained by pressing, to be applied on embedded precision reflective optics. Different SiC granulometries, having YAG as sintering additive, were processed by: ball milling, drying and deagglomeration, sift, uniaxial and isostatic pressing, and, finally, argon atmosphere sintering at 1900°C. Different porosities were obtained according to the amount of organic material added. Into one side of the samples pellets of organic material were introduced to generate voids to reduce the weight of samples as a whole. The substrates were grinding and polished, looking for a SiC surface having low porosity, as porosity is directly related to light scattering that should be avoided on optical surfaces. Laser surface treatments were applied (using or not SiC barbotine) as a method to improve the surface quality. The samples were characterized by optical and laser confocal microscopy, roughness measurements and mechanical tests. The results are very promissory for future applications. © 2012 Materials Research Society.

Efeito do método de esterilização e do tempo de uso sobre a eficiência de corte de fresas carbide

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Avaliação da eficiência de corte de fresas Carbide em função dos métodos de esterilização físicos e químico. Análise gravimétrica

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Análise morfológica e de resistência à flexão da interface ponta ativa/haste metálica em fresas carbide após o uso de esterilização

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Esterilização de fresas carbide em fornos de micro-ondas domésticos. Efeito da capacidade. da potência, do meio da imersão, da quantidade e posição da amostra sobre o tempo de esposição

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influência de diferentes métodos de limpeza sobre a eficiência de corte e as características morfológicas de fresas Carbide

Introduction: Currently, there are many questions regarding the cleaning methods seeking greater efficiency and less loss of burs. Aim: the aim of this study was to evaluate the influence of cleaning methods on the cutting efficiency and morphological characteristics of stainless steel burs tungsten carbide (carbide). Materials and method: Thirty burs were divided into five groups (n = 5) according with the cleaning method: L1 - steel brush, L2 - nylon brush, L3 - ultrasound  +  distilled water, L4 - ultrasound + descaling solution and L5 - no cleaning method (control). The burs were used for the cutting of bovine enamel during six periods of 12 minutes each. After each period, the burs were cleaned (except L5 ) following the protocol established for each group. The cutting efficiency was determined by mass loss and morphological characteristics. Result: The average amount of wear after 72 minutes of use were L1  = 0.3558 g; L2  = 0.4275 g; L3  = 0.4652 g; L4  = 0.4396 g e L5  = 0.4854 g; significant differences in the time of use (p  <  0.001) and cleaning method (p  <  0.001). The L1 group showed the worst performance. Regardless of the experimental group, morphological analysis revealed alterations in the cutting blades soon after the first 12 minutes, being L1 the most affected group. Conclusion: The cleaning with wire brush was the most damaging method to the cutting efficiency and to the morphology of carbide burs.

Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.

Optical properties of boron carbide (B5C) thin films fabricated by plasma-enhanced chemical-vapor deposition

Variable angle of incidence spectroscopic ellipsometry was used to determine the optical constants near the band edge of boron carbide (B5C) thin films deposited on glass and n-type Si(111) via plasma-enhanced chemical-vapor deposition. The index of refraction n, the extinction coefficient k, and the absorption coefficient are reported in the photon energy spectrum between 1.24 and 4 eV. Ellipsometry analysis of B5C films on silicon indicates a graded material, while the optical constants of B5C on glass are homogeneous. Line shape analyses of absorption data for the films on glass indicate an indirect transition at approximately 0.75 eV and a direct transition at about 1.5 eV. ©1996 American Institute of Physics.

Diagnostic of Silicon Carbide Surge Arresters using Leakage Current Measurement

Nowadays, the zinc oxide surge arresters (ZnO) are widely used in power systems, however, a large number of silicon carbide surge arresters (SiC) are still in service in the utilities. On the other hand, it is not possible to replace all SiC surge arresters in a short time period, being necessary to review the maintenance program taking into account the surge arresters that are more degraded. In this context, a research project was established between the University of Sao Paulo and the electrical utility CTEEP, aiming the investigation of its SiC surge arresters. This work shows that the leakage current measurement, a diagnostic method for the ZnO surge arresters, can provide useful information related to the condition of the SiC surge arresters. Analysis of the amplitude and distortion of the leakage current, also considering thermovision measurements, resulted in better evaluation of the SiC surge arresters.

Effects of cryogenic and stress relief treatments on temper carbide precipitation in AISI D2 tool steel

The effects of cryogenic and stress relief treatments on temper carbide precipitation in the cold work tool steel AISI D2 were studied. For the cryogenic treatment the temperature was −196°C and the holding time was 2, 24 or 30 h. The stress relief heat treatment was carried at 130°C/90 min, when applied. All specimens were compared to a standard thermal cycle. Specimens were studied using metallographic characterisation, X-ray diffraction and thermoelectric power measurements. The metallographic characterisation used SEM (scanning electron microscopy) and SEM-FEG (SEM with field emission gun), besides OM (optical microscopy). No variation in the secondary carbides (micrometre sized) precipitation was found. The temper secondary carbides (nanosized) were found to be more finely dispersed in the matrix of the specimens with cryogenic treatment and without stress relief. The refinement of the temper secondary carbides was attributed to a possible in situ carbide precipitation during tempering.

4H silicon carbide particle detectors: study of the defects induced by high energy neutron irradiation

During the last decade advances in the field of sensor design and improved base materials have pushed the radiation hardness of the current silicon detector technology to impressive performance. It should allow operation of the tracking systems of the Large Hadron Collider (LHC) experiments at nominal luminosity (1034 cm-2s-1) for about 10 years. The current silicon detectors are unable to cope with such an environment. Silicon carbide (SiC), which has recently been recognized as potentially radiation hard, is now studied. In this work it was analyzed the effect of high energy neutron irradiation on 4H-SiC particle detectors. Schottky and junction particle detectors were irradiated with 1 MeV neutrons up to fluence of 1016 cm-2. It is well known that the degradation of the detectors with irradiation, independently of the structure used for their realization, is caused by lattice defects, like creation of point-like defect, dopant deactivation and dead layer formation and that a crucial aspect for the understanding of the defect kinetics at a microscopic level is the correct identification of the crystal defects in terms of their electrical activity. In order to clarify the defect kinetic it were carried out a thermal transient spectroscopy (DLTS and PICTS) analysis of different samples irradiated at increasing fluences. The defect evolution was correlated with the transport properties of the irradiated detector, always comparing with the un-irradiated one. The charge collection efficiency degradation of Schottky detectors induced by neutron irradiation was related to the increasing concentration of defects as function of the neutron fluence.