950 resultados para X-rays double stars


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X-ray phase imaging with illumination by a partially coherent source with a setup similar to in-line holography is considered. Using the optical transform function, we consider the effects of partial coherence on this x-ray phase imaging for a weak phase object. The optimal contrast and the resolution of phase imaging are analyzed. As the coherence decreases, the imaging contrast and the optimal contrast frequency decrease, and the resolution degrades. It is shown that this contrast-enhanced phase-imaging method can be regarded as a linear bandpass filter and that the bandwidth and the image contrast are changeable. The frequency property of the imaging system can be improved if an incoherent x-ray source with the proper shape is used. (C) 1999 Optical Society of America.

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Electronic Kαl x-ray isotope shifts have been measured for Sn 116-124, Sm 148-154, W 182-184, W 184-186, and W 182-186 using a curved crystal Cauchois spectrometer. The analysis of the measurements has included the electrostatic volume effect, screening by the transition electron as well as the non-transition electrons, normal and specific mass shifts, dynamical nuclear qudrupole polarization, and a radiative correction effect of the electron magnetic moment in the nuclear charge radii are obtained. Where other experimental data are available, the agreement with the present measurements is satisfactory. Comparisons with several nuclear model predictions yield only partial agreement.

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The basic elements of Bragg-Fresnel multilayer optics are multilayer gratings. In this paper, the fabrication process for the simplest Bragg-Fresnel multilayer optics is given; the diffraction measurements at 8-keV x rays of multilayer gratings are presented; and the measurement results in the diffraction spectrum are analyzed and discussed in detail. (C) 1996 Society of Photo-Optical Instrumentation Engineers.

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Wafer bonding between p-Si and an n-InP-based InGaAsP multiple quantum well (MQW) wafer was achieved by a direct wafer bonding method. In order to investigate the strain at different annealing temperatures, four pre-bonded pairs were selected, and pair one was annealed at 150 degrees C, pair two at 250 degrees C, pair three at 350 degrees C, and pair four at 450 degrees C, respectively. The macroscopical strains on the bonded epitaxial layer include two parts, namely the internal strain and the strain caused by the mismatching of the crystalline orientation between InP (100) and Si (100). These strains were measured by the X-ray double crystalline diffraction, and theoretical calculations of the longitudinal and perpendicular thermal strains at different annealing temperatures were calculated using the bi-metal thermostats model, both the internal strain and the thermal strain increase with the annealing temperature. Normal thermal stress and the elastic biaxial thermal strain energy were also calculated using this model. (c) 2006 Elsevier B.V. All rights reserved.

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An X-ray diffraction method, estimating the strain relaxation in an ultrathin layer, has been discussed by using kinematic and dynamical X-ray diffraction (XRD) theory. The characteristic parameter Delta Omega, used as the criterion of the strain relaxation in ultrathin layers, is deduced theoretically. It reveals that Delta Omega should be independent of the layer thickness in a coherently strained layer. By this method, we characterized our ultrathin GaNxAs1-x samples with N contents up to 5%. XRD measurements show that our GaNxAs1-x layers are coherently strained on GaAs even for such a large amount of N. Furthermore, a series of GaNxAs1-x samples with same N contents but different layer thicknesses were also characterized. It was found that the critical thickness (L-c) of GaNAs in the GaAs/GaNAs/GaAs structures determined by XRD measurement was 10 times smaller than the theoretical predictions based on the Matthews and Blakeslee model. This result was also confirmed by in situ observation of reflection high-energy electron diffraction (RHEED) and photoluminescence (PL) measurements. RHEED observation showed that the growth mode of GaNAs layer changed from 2D- to 3D-mode as the layer thickness exceeded L-c. PL measurements showed that the optical properties of GaNAs layers deteriorated rapidly as the layer thickness exceeded L-c. (C) 2000 Elsevier Science B.V. All rights reserved.

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GaAs epilayer films on Si substrates grown by molecular-beam epitaxy were investigated by the x-ray double-crystal diffraction method. The rocking curves were recorded for different diffraction vectors of samples. The results show that the unit-cell volumes of GaAs epilayers are smaller than that of the GaAs bulk material. The strained-layer superlattice buffer layer can improve the quality of the film, especially in the surface lamella. The parameter W' = W(expt)/(square-root \gamma-h\/gamma-0/sin 2-theta-B) is introduced to describe the quality of different depths of epilayers. As the x-ray incident angle is increased, W' also increases, that is, the quality of the film deteriorates with increasing penetration distance of the x-ray beam. Therefore, W' can be considered as a parameter that describes the degree of perfection of the epilayer along the depth below the surface. The cross-section transmission electron microscopy observations agree with the results of x-ray double-crystal diffraction.

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DNA damage and cell reproductive death determined by alkaline comet and clonogenic survival assays were examined in Lewis lung carcinoma cells after exposure to 89.63 MeV/u carbon ion and 6 MV X-ray irradiations, respectively. Based on the survival data, Lewis lung carcinoma cells were verified to be more radiosensitive to the carbon ion beam than to the X-ray irradiation. The relative biological effectiveness (RBE) value, which was up to 1.77 at 10% survival level, showed that the DNA damage induced by the high-LET carbon ion beam was more remarkable than that induced by the low-LET X-ray irradiation. The dose response curves of '' Tail DNA (%)'' (TD) and "Olive tail moment" (OTM) for the carbon ion irradiation showed saturation beyond about 8 Gy. This behavior was not found in the X-ray curves. Additionally, the carbon ion beam produced a lower survival fraction at 2 Gy (SF2) value and a higher initial Olive tail moment 2 Gy (OTM2) than those for the X-ray irradiation. These results suggest that carbon ion beams having high-LET values produced more severe cell reproductive death and DNA damage in Lewis lung carcinoma cells in comparison with X-rays and comet assay might be an effective predictive test even combining with clonogenic assay to assess cellular radio sensitivity

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The study is to investigate the feasibility and advantages of heavy ion beams on radiotherapy. The cellular cycle and apoptosis, cell reproductive death and p53 expression evaluated with flow cytometry, clonogenic survival assays and Western blot analysis were examined in lung carcinoma cells after exposure to 89.63 MeV/u carbon ion and 6 MV X-ray irradiations, respectively. The results showed that the number colonyforming assay of A549 was higher than that of H1299 cells in two radiation groups; A549 cellular cycle was arrested in G(2)/M in 12 It and the percentage of apoptosis ascended at each time point of carbon ion radiation with doses, the expression of p53 upregulated with doses exposed to X-ray or carbon ion. The cell number in G(2)/M of H1299 and apoptosis were increasing at all time points with doses in C-12(6+) ion irradiation group. The results suggested that the effects of carbon ions or X rays irradiation on lung carcinoma cells were different, C-12(6+) ion irradiation could have more effect on upregulating the expression of p53 than X-ray, and the upregulated expression of p53 might produce the cellular cycle G(2)/M arrested, apoptosis increasing; and p53 gene might affect the lung cancer cells radiosensitivity.

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C.R. Bull, R. Zwiggelaar and R.D. Speller, 'Review of inspection techniques based on the elastic and inelastic scattering of X-rays and their potential in the food and agricultural industry', Journal of Food Engineering 33 (1-2), 167-179 (1997)