974 resultados para Wide Band Gap Semi-conductor
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SiC and AtB 12 have been prepared and their resistivities and Hall voltages measured. The resistivities and Hall voltages were measured by the Van der Pauw's method, using spring loaded tungsten contacts. In this method, the major requirement is to have samples of plane parallel surfaces of arbitrary shape with four small contacts at the circumference. Similar measurements were made with a number of SiC crystals obtained from the Norton Research Corporation (Canada)-Ltd., Carolina Aluminum Co., Exolon Co. and Carborundum Co. It was found that resistivity, carrier concentration and mobility of ions depend on the type of impurity. AtB 12 was prepared from the melt containing At and B in the ratio of 4:1. They formed amber-colour pseudo tetragonal crystals. As the crystals obtained were small for electrical measurements, hot pressed lumps have been used to measure their resistivity.
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The design and development of an L-band printed dipole antenna. optimized for wide-band applications near first resonance, is reported. This design has achieved more than 48% impedance bandwidth (VSWR 2:1), without degrading its overall radiation efficiency
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Bandwidth enhancement of a rectangular microstrip antenna using a T-shaped microstrip feed is explored in this paper. A 2:1 VSWR impedance bandwidth of 23% is achieved by employing this technique. The far-field patterns are stable across the pass band. The proposed antenna can be used conveniently in broadband communications
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In this paper, microstrip lines magnetically coupled to splitring resonators (SRRs) are conquved to electromagnetic bundgup (EBG) nr,rrostrip lines in terns q/ their stop-heard penjbrnmrnce and dimensions. In bath types o/ trunsmis•siou lines, signal propagation is inhibited in it certain jequency bwuL For EBG microstrip lines, the central frequency of such a forbidden band is determined by the period of the structure, whereas in SRR-hased microstrip lines the position of the frequency gap depends on the quasi-static resonant frequency of the rings. The main relevant conrributiun of this paper is to provide a tuning procedure to control the gap width in SRR microstrip lines, and to show that by using SRRs, device dimensions ale much smaller than those required by EBGs in order to obtain similar stop-banal performance. This has been demonstrated by fill-wave electromagnetic simulations and experimentally verified from the characterization ql two fabricated microstrip lines: one with rectangular SRRs etched on the upper substrate side, and the other with a periodic perturbation cf'strip width. For similar rejection and 1-(;H,. gap width centered at 4.5 Gllz, it has been found that the SRR microstrip line is•,fve times shorter. In addition, no ripple is appreciable in the allowed band for the .SRR-hared structure, whereas due to dispersion, certain mismatch is expected in the EBG prototype. Due to the high-frequency selectivity, controllable gap width, and small dimensions, it is believed that SRR coupled to planar transmission lines can have an actual impact on the design of stop-band filters compatible with planar technology, and can be an alternative to present solutions based on distributed approaches or EBG
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Design, development and experimental observations of a L: band printed dipole antenna is presented.Bandwidth enhancement is achieved by end-loading or the dipole arms. Using the present technique Impedance bandwidth van be enhanced up to 50% without degrading the efficiency of the antenna.
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The thesis is the outcome of the exhaustive theoretical and experimental investigations performed on Printed Monopole Antennas loaded with different geometries .The work presented in this thesis describes the development of a 3D- FDTD(Finite Difference Time Domain) Modeller using MATLAB for the numerical computation of the radiation characteristics of the antenna. The predicted results are verified experimentally and also through simulation using Ansoft HFSS.The effect of top loading of the monopole with different geometries ,the dimensions of the loading patch and ground plane and the material parameters of the dielectric substrate upon the radiation performance of the antenna is studied in detail. Optimized Printed Monopole antennas suitable for Ultra Wide Band (UWB) applications have been developed.
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In recent years, there is a visible trend for products/services which demand seamless integration of cellular networks, WLANs and WPANs. This is a strong indication for the inclusion of high speed short range wireless technology in future applications. In this context UWB radio has a significant role to play as an extension/complement to existing cellular/access technology. In the present work, three major types of ultra wide band planar antennas are investigated: Monopole and Slot. Three novel compact UWB antennas, suitable for poratble applications, are designed and characterized, namely 1) Ground modified monopole 2) Serrated monopole 3) Triangular slot The performance of these designs have been studied using standard simulation tools used in industry/academia and they have been experimentally verified. Antenna design guidelines are also deduced by accounting the resonances in each structure. In addition to having compact sized, high efficiency and broad bandwidth antennas, one of the major criterion in the design of impulse-UWB systems have been the transmission of narrow band pulses with minimum distortion. The key challenge is not only to design a broad band antenna with constant and stable gain but to maintain a flat group delay or linear phase response in the frequency domain or excellent transient response in time domain. One of the major contributions of the thesis lies in the analysis of the frequency and timedomain response of the designed UWB antennas to confirm their suitability for portable pulsed-UWB systems. Techniques to avoid narrowband interference by engraving narrow slot resonators on the antenna is also proposed and their effect on a nano-second pulse have been investigated
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A slot line fed planar dipole antenna with a parasitic strip for wide band applications is presented. The presented antenna offers a 2:1 VSWR bandwidth from 1.66 to 2.71 GHz covering the DCS/ PCS/UMTS and IEEE 802.11b/g bands with a gain better than 6.5 dBi. The uniplanar design, simple feeding, and high gain make it a versatile antenna for wireless applications
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A printed compact coplanar waveguide fed triangular slot antenna for ultra wide band (UWB) communication systems is presented. The antenna comprises of a triangular slot loaded ground plane with a T shaped strip radiator to enhance the bandwidth and radiation. This compact antenna has a dimension of 26mm×26mm when printed on a substrate of dielectric constant 4.4 and thickness 1.6mm. Design equations are implemented and validated for different substrates. The pulse distortion is insignificant and is verified by the measured antenna performance with high signal fidelity and virtually steady group delay. The simulation and experiment reveal that the proposed antenna exhibits good impedance match, stable radiation patterns and constant gain and group delay over the entire operating band
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The paper presents a compact planar Ultra Wide Band ¯lter employing folded stepped impedance resonators with series capacitors and dumb bell shaped defected ground structures. An interdigital quarter wavelength coupled line is used for achieving the band pass characteristics. The transmission zeros are produced by stepped impedance resonators. The ¯lter has steep roll o® rate and good attenuation in its lower and upper stop bands, contributed by the series capacitor and defected ground structures respectively.
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The paper presents a maximally flat compact planar filter employing folded Stepped Impedance Resonators (SIR) and Complementary Split Ring Resonators (CSRR), for Ultra Wide Band (UWB) applications. An interdigital quarter wavelength coupled line is used for achieving the band pass characteristics. The filter has low insertion loss in its pass band and steep roll off rate and good attenuation in its lower and upper stop bands. The measured microwave characteristics of the fabricated filter show good agreement with the simulated response
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Polyaniline thin films prepared by RF plasma polymerisation were irradiated with 92MeV Si ions for various fluences of 1 1011, 1 1012 and 1 1013 ions/cm2. FTIR and UV–vis–NIR measurements were carried out on the pristine and Si ion irradiated polyaniline thin films for structural evaluation and optical band gap determination. The effect of swift heavy ions on the structural and optical properties of plasma-polymerised aniline thin film is investigated. Their properties are compared with that of the pristine sample. The FTIR spectrum indicates that the structure of the irradiated sample is altered. The optical studies show that the band gap of irradiated thin film has been considerably modified. This has been attributed to the rearrangement in the ring structure and the formation of CRC terminals. This results in extended conjugated structure causing reduction in optical band gap
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The main focus of the present study was to develop ideal low band gap D-A copolymers for photoconducting and non-linear optical applications. This chapter summarizes the overall research work done. Designed copolymers were synthesized via direct arylation or Suzuki coupling reactions. Copolymers were characterized by theoretical and experimental methods. The suitability of these copolymers in photoconducting and optical limiting devices has been investigated.The results suggest that the copolymers investigated in the present study have a good non-linear optical response and are comparable to or even better than the D-A copolymers reported in the literature and hence could be chosen as ideal candidates with potential applications for non-linear optics. The results also show that the structures of the polymers have great impact on NLO properties. Copolymers studied here exhibits good optical limiting property at 532 nm wavelength due to two-photon absorption (TPA) process. The results revealed that the two copolymers, (P(EDOT-BTSe) and P(PH-TZ)) exhibited strong two-photon absorption and superior optical power limiting properties, which are much better than that of others.
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A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV