924 resultados para Threshold energies


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We calculate upper and lower bounds on the modulus of the pion electromagnetic form factor on the unitarity cut below the omega pi inelastic threshold, using as input the phase in the elastic region known via the Fermi-Watson theorem from the pi pi P-wave phase shift, and a suitably weighted integral of the modulus squared above the inelastic threshold. The normalization at t = 0, the pion charge radius and experimental values at spacelike momenta are used as additional input information. The bounds are model independent, in the sense that they do not rely on specific parametrizations and do not require assumptions on the phase of the form factor above the inelastic threshold. The results provide nontrivial consistency checks on the recent experimental data on the modulus available below the omega pi threshold from e(+)e(-) annihilation and tau-decay experiments. In particular, at low energies the calculated bounds offer a more precise description of the modulus than the experimental data.

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It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10 6-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect. © 2014 AIP Publishing LLC.

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The pp -> pn pi(+) reaction is a channel with the largest total cross section for pp collision in COSY/CSR energy region. In this work, we investigate individual contributions from various N* and Delta* resonances with mass up to about 2 GeV for the pp -> pn pi(+) reaction. We extend a resonance model, which can reproduce the observed total cross section quite well, to give theoretical predictions of various differential cross sections for the present reaction at T-p = 2.88 GeV. It could serve as a reference for identifying new physics in the future experiments at HIRFL-CSR.

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The vibrationally resolved spectra of selected rotamers of m-aminophenol have been recorded by mass analyzed threshold ionization spectroscopy in connection with two-color resonant two-photon excitation scheme. The adiabatic ionization energies of the cis and trans rotamers are 61460 +/- 5 and 61734 +/- 5 cm(-1), respectively. The frequencies of modes 1 (breathing) and 18a (in-plane CH bending) are measured to be 744 and 1097 cm(-1) for the cis, and 736 and 1104 cm(-1) for the trans rotamer, respectively. This indicates that different orientation of the OH with respect to the NH2 substituent only slightly influences these two modes. (C) 2004 Elsevier B.V. All rights reserved.

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We propose a physical mechanism that leads to the emergence of secondary threshold laws in processes of multiple ionization of atoms. We argue that the removal of n electrons (n>2) from a many-electron atom may proceed via intermediate resonant states of the corresponding doubly charged ion. For atoms such as rare gases, the density of such resonances in the vicinity of subsequent ionization thresholds is high. As a result, the appearance energies for multiply charged ions are close to these thresholds, while the effective power indices mu in the near-threshold energy dependence of the cross section, sigmaproportional toE(mu), are lower compared to those from the Wannier theory. This provides a possible explanation of the recent experimental results of B. Gstir [Nucl. Instrum. Methods Phys. Res. B 205, 413 (2003)].

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A systematic study of the ionization of atomic hydrogen by electron impact from 0.3 eV to a few eV above the ionization threshold has been carried out using a semiclassical-quantal calculation. Differential and integrated cross sections are presented at 0.3 eV above the energy threshold. Triple- differential cross sections (TDCS) are presented at constant theta(12) geometry where theta(12)=180degrees and 150degrees. Good agreement is achieved with the measurement [Roder, Phys. Rev. Lett. 79, 1666 (1997)] and calculations based on exterior complex scaling at 2 eV and 4 eV above threshold. Results of triple-differential cross sections are also presented at 0.3, 0.5, and 1.0 eV above threshold at both theta(12)=180degrees and 150degrees. At theta(12)=180degrees the small local maximum in the TDCS around theta(1)=90degrees reported by Pan and Starace [Phys. Rev. A 45, 4588 (1992)] at 0.5 eV above threshold is not observed in our calculation at energies down to 0.3 eV above threshold. The shape of our double differential cross sections seems to disagree qualitatively with the available calculations as we found two local maxima around 15degrees and 165degrees in our calculation. Single differential cross sections in our formulation appear naturally as a function of total excess energy E and, therefore, constant for all combinations of individual electron energies E-1 and E- 2 with E=E-1+E-2. Total ionization cross sections are also compared with measurement and available theoretical calculations and found to be in reasonably good agreement up to 10 eV above ionization threshold.

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The laser-induced photodissociation of formaldehyde in the wavelength range 309<λ<330nm 309<λ<330nm has been investigated using H (Rydberg) atom photofragment translational spectroscopy. Photolysis wavelengths corresponding to specific rovibronic transitions in the A ˜ A 2 1 ←X ˜ A 1 1 ÃA21←X̃A11 2 1 0 4 3 0 201403 , 2 2 0 4 1 0 202401 , 2 2 0 4 3 0 202403 , 2 3 0 4 1 0 203401 , and 2 1 0 5 1 0 201501 bands of H 2 CO H2CO were studied. The total kinetic energy release spectra so derived can be used to determine partial rotational state population distributions of the HCO cofragment. HCO product state distributions have been derived following the population of various different N K a NKa levels in the A ˜ A 2 1 ÃA21 2 2 4 3 2243 and 2 3 4 1 2341 states. Two distinct spectral signatures are identified, suggesting competition between dissociation pathways involving the X ˜ A 1 1 X̃A11 and the a ˜ A 2 3 ãA23 potential energy surfaces. Most rovibrational states of H 2 CO(A ˜ A 2 1 ) H2CO(ÃA21) investigated in this work produceH+HCO(X ˜ A ′ 2 ) H+HCO(X̃A′2) photofragments with a broad kinetic energy distribution and significant population in high energy rotational states of HCO. Photodissociation via the A ˜ A 2 1 ÃA21 2 2 4 3 2243 1 1,1 11,1 (and 1 1,0 11,0 ) rovibronic states yields predominantly HCO fragments with low internal energy, a signature that these rovibronic levels are perturbed by the a ˜ A 2 3 ãA23 state. The results also suggest the need for further careful measurements of the H+HCO H+HCO quantum yield from H 2 CO H2CO photolysis at energies approaching, and above, the barrier to C–H bond fission on the a ˜ A 2 3 ãA23 potential energy surface.

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All ionizing radiations deposit energy stochastically along their tracks. The resulting distribution of energies deposited in a small target such as the DNA helix leads to a corresponding spectrum in the severity of damage produced. So far, most information about the probable spectra of DNA lesion complexity has come from Monte Carlo studies which endeavour to model the relationship between the energy deposited in DNA and the damage induced. The aim of this paper is to establish methods of determining this relationship by irradiating pBR322 plasmid DNA using low energy electrons with energies comparable with the minimum energy thought to produce critical damage. The technique of agarose gel electrophoresis has been used to ascertain the fraction of DNA single- and double-strand breaks induced by monoenergetic electrons with energies as low as 25 eV. Our data show that the threshold electron energy for induction of single-strand breaks is

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We employ the time-dependent R-matrix (TDRM) method to calculate anisotropy parameters for positive and negative sidebands of selected harmonics generated by two-color two-photon above-threshold ionization of argon. We consider odd harmonics of an 800-nm field ranging from the 13th to 19th harmonic, overlapped by a fundamental 800-nm IR field. The anisotropy parameters obtained using the TDRM method are compared with those obtained using a second-order perturbation theory with a model potential approach and a soft photon approximation approach. Where available, a comparison is also made to published experimental results. All three theoretical approaches provide similar values for anisotropy parameters. The TDRM approach obtains values that are closest to published experimental values. At high photon energies, the differences between each of the theoretical methods become less significant.

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A pseudopotential for positronium-atom interaction, based on electron-atom and positron-atom phase shifts, is constructed, and the phase shifts for Ps-Kr and Ps-Ar scattering are calculated. This approach allows us to extend the Ps-atom cross sections, obtained previously in the impulse approximation [I. I. Fabrikant and G. F. Gribakin, Phys. Rev. Lett. 112, 243201 (2014)], to energies below the Ps ionization threshold. Although experimental data are not available in this low-energy region, our results describe well the tendency of the measured cross sections to drop with decreasing velocity at v < 1 a.u. Our results show that the effect of the Ps-atom van der Waals interaction is weak compared to the polarization interaction in electron-atom and positron-atom scattering. As a result, the Ps scattering length for both Ar and Kr is positive, and the Ramsauer-Townsend minimum is not observed for Ps scattering from these targets. This makes Ps scattering quite different from electron scattering in the low-energy region, in contrast to the intermediate energy range from the Ps ionization threshold up to v ∼ 2 a.u., where the two are similar.

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Resonance states in atoms or ions at low energies can control the rates of important plasma processes (e.g., dielectronic recombination). We examine the role of states at negative energies just below the ionization threshold of the recombined system and find that they can contribute as much, or more, to recombination as positive energy states. In plasmas, negative energy states can be populated by three body recombination, photorecombination, or continuum lowering. Properly including these negative energy states in a theoretical treatment of plasma processes can change the thermally averaged rate coefficients and, in some cases, removes much of the sensitivity to the energy of a state.

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The Kr 4s-electron photoionization cross section as a function of the exciting-photon energy in the range between 30 eV and 90 eV was calculated using the configuration interaction (CI) technique in intermediate coupling. In the calculations the 4p spin-orbital interaction and corrections due to higher orders of perturbation theory (the so-called Coulomb interaction correlational decrease) were considered. Energies of Kr II states were calculated and agree with spectroscopic data within less than 10 meV. For some of the Kr II states new assignments were suggested on the basis of the largest component among the calculated CI wavefunctions.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Includes bibliography

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During the last decades magnetic circular dichroism (MCD) has attracted much interest and evolved into various experimental methods for the investigation of magnetic thin films. For example, synchrotron-based X-ray magnetic circular dichroism (XMCD) displays the absolute values of spin and orbital magnetic moments. It thereby benefits from large asymmetry values of more than 30% due to the excitation of atomic core-levels. Similarly large values are also expected for threshold photoemission magnetic circular dichroism (TPMCD). Using lasers with photon energies in the range of the sample work function this method gives access to the occupied electronic structure close to the Fermi level. However, except for the case of Ni(001) there exist only few studies on TPMCD moreover revealing much smaller asymmetries than XMCD-measurements. Also the basic physical mechanisms of TPMCD are not satisfactorily understood. In this work we therefore investigate TPMCD in one- and two-photon photoemission (1PPE and 2PPE) for ferromagnetic Heusler alloys and ultrathin Co films using ultrashort pulsed laser light. The observed dichroism is explained by a non-conventional photoemission model using spin-resolved band-structure calculations and linear response theory. For the two Heusler alloys Ni2MnGa and Co2FeSi we give first evidence of TPMCD in the regime of two-photon photoemission. Systematic investigations concerning general properties of TPMCD in 1PPE and 2PPE are carried out at ultrathin Co films grown on Pt(111). Here, photon-energy dependent measurements reveal asymmetries of 1.9% in 1PPE and 11.7% in 2PPE. TPMCD measurements at decreased work function even yield larger asymmetries of 6.2% (1PPE) and 17% (2PPE), respectively. This demonstrates that enlarged asymmetries are also attainable for the TPMCD effect on Co(111). Furthermore, we find that the TPMCD asymmetry is bulk-sensitive for 1PPE and 2PPE. This means that the basic mechanism leading to the observed dichroism must be connected to Co bulk properties; surface effects do not play a crucial role. Finally, the enhanced TPMCD asymmetries in 2PPE compared to the 1PPE case are traced back to the dominant influence of the first excitation step and the existence of a real intermediate state. The observed TPMCD asymmetries cannot be interpreted by conventional photoemission theory which only considers direct interband transitions in the direction of observation (Γ-L). For Co(111), these transitions lead to evanescent final states. The excitation to such states, however, is incompatible with the measured bulk-sensitivity of the asymmetry. Therefore, we generalize this model by proposing the TPMCD signal to arise mostly from direct interband transitions in crystallographic directions other than (Γ-L). The necessary additional momentum transfer to the excited electrons is most probably provided by electron-phonon or -magnon scattering processes. Corresponding calculations on the basis of this model are in reasonable agreement with the experimental results so that this approach represents a promising tool for a quantitative description of the TPMCD effect. The present findings encourage an implementation of our experimental technique to time- and spatially-resolved photoemission electron microscopy, thereby enabling a real time imaging of magnetization dynamics of single excited states in a ferromagnetic material on a femtosecond timescale.