Photosynthetic responses to temperature in tropical lotic macroalgae

A comparative analysis of the photosynthetic responses to temperature (10-30°C) was carried out under short-term laboratory conditions by chlorophyll fluorescence and oxygen (O2) evolution. Ten lotic macroalgal species from southeastern Brazil (20°11-20°48′S, 49°18-49°41′W) were tested, including Bacillariophyta, Chlorophyta, Cyanophyta, Rhodophyta and Xanthophyta. Temperature had significant effects on electron transport rate (ETR) only for three species (Terpsinoe musica, Bacillariophyta; Cladophora glomerata, Chlorophyta; and C. coeruleus, Rhodophyta), with highest values at 25-30°C, whereas the remaining species had no significant responses. It also had similar effects on non-photochemical quenching and ETR. Differences in net photosynthesis/dark respiration ratios at distinct temperatures were found, with an increasing trend of respiration with higher temperatures. This implies in a decreasing balance between net primary production and temperature, representing more critical conditions toward higher temperatures for most species. In contrast, high net photosynthesis and photosynthesis/dark respiration ratios at high and wide ranges of temperature were found in three species of green algae, suggesting that these algae can be important primary producers in lotic ecosystems, particularly in tropical regions. Optimal photosynthetic rates were observed under similar environmental temperatures for five species (two rhodophytes, two chlorophytes and one diatom) considering both techniques, suggesting acclimation to their respective ambient temperatures. C. coeruleus was the only species with peaks of ETR and O 2 evolution under similar field-measured temperatures. All species kept values of ETR and net photosynthesis close to the optimum under a broad range of temperatures. Increased non-photochemical quenching, as a measure of thermal dissipation of excess energy, toward higher temperatures was observed in some species, as well as positive correlation of non-photochemical quenching with ETR, and were interpreted as two mechanisms of adaptation of the photosynthetic apparatus to temperature changes. Different optimal temperatures were found for individual species by each technique, generally under lower temperatures by O2 evolution, indicating dependence on distinct factors: increases in temperature generally induced higher ETR due to increased enzymatic activity, whereas increments of enzymatic activity were compensated by increased respiration and photorespiration leading to decreases in net photosynthesis.

Desenvolvimento experimental e simulação numérica de uma réplica térmica de placa de circuito impresso

Pós-graduação em Engenharia Mecânica - FEIS

Water use of Juniperus virginiana trees encroached into mesic prairies in Oklahoma, USA

Juniperus virginiana (eastern redcedar) is encroaching into mesic prairies of the southern Great Plains, USA, and is altering the hydrologic cycle. We used the thermal dissipation technique to quantify daily water use of J. virginiana into a mesic prairie by measuring 19 trees of different sizes from different density stands located in north-central Oklahoma during 2011. We took the additional step to calibrate our measurements by comparing thermal dissipation technique estimates to volumetric water use for a subset of trees. Except for days with maximum air temperature below -3 degrees C, J. virginiana trees used water year round, reached a peak in late May, and exhibited reduced water use in summer when soil water availability was low. Overall daily average water use was 24 l (+/- 21.81 s.d.) per tree. Trees in low density stands used more water than trees with similar diameters from denser stands. However, there was no difference in water use between trees in different density stands when expressed on a canopy area basis. Approximately 50% of variation in water use that remained after accounting for the factors site, tree, and day was explained using a physiologically-based model that included daily potential evapotranspiration, maximum vapour pressure deficit, maximum temperature, solar radiation, and soil water storage between 0 and 10 cm. Our model suggested that a J. virginiana woodland with a closed canopy is capable of transpiring almost all precipitation reaching the soil in years with normal precipitation, indicating the potential for encroachment to reduce water yield for streamflow and groundwater recharge. Copyright (C) 2013 John Wiley & Sons, Ltd.

MicroRaman Spectroscopy of Si Nanowires: Influence of Size

Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals important thermal effects, which broaden and shift the one phonon Raman bands. The low thermal conductivity of the NWs and the low thermal dissipation are responsible for the temperature enhancement in the NW under the excitation with the laser beam. We have modeled, using finite element methods, the interaction between the laser beam and the NWs. The Raman spectrum of Si NWs is interpreted in terms of the temperature induced by the laser beam excitation, in correlation with finite element methods (fem) for studying the interaction between the laser beam and the NWs.

Design and Simulation of Deep Nanometer SRAM Cells under Energy, Mismatch, and Radiation Constraints

La fiabilidad está pasando a ser el principal problema de los circuitos integrados según la tecnología desciende por debajo de los 22nm. Pequeñas imperfecciones en la fabricación de los dispositivos dan lugar ahora a importantes diferencias aleatorias en sus características eléctricas, que han de ser tenidas en cuenta durante la fase de diseño. Los nuevos procesos y materiales requeridos para la fabricación de dispositivos de dimensiones tan reducidas están dando lugar a diferentes efectos que resultan finalmente en un incremento del consumo estático, o una mayor vulnerabilidad frente a radiación. Las memorias SRAM son ya la parte más vulnerable de un sistema electrónico, no solo por representar más de la mitad del área de los SoCs y microprocesadores actuales, sino también porque las variaciones de proceso les afectan de forma crítica, donde el fallo de una única célula afecta a la memoria entera. Esta tesis aborda los diferentes retos que presenta el diseño de memorias SRAM en las tecnologías más pequeñas. En un escenario de aumento de la variabilidad, se consideran problemas como el consumo de energía, el diseño teniendo en cuenta efectos de la tecnología a bajo nivel o el endurecimiento frente a radiación. En primer lugar, dado el aumento de la variabilidad de los dispositivos pertenecientes a los nodos tecnológicos más pequeños, así como a la aparición de nuevas fuentes de variabilidad por la inclusión de nuevos dispositivos y la reducción de sus dimensiones, la precisión del modelado de dicha variabilidad es crucial. Se propone en la tesis extender el método de inyectores, que modela la variabilidad a nivel de circuito, abstrayendo sus causas físicas, añadiendo dos nuevas fuentes para modelar la pendiente sub-umbral y el DIBL, de creciente importancia en la tecnología FinFET. Los dos nuevos inyectores propuestos incrementan la exactitud de figuras de mérito a diferentes niveles de abstracción del diseño electrónico: a nivel de transistor, de puerta y de circuito. El error cuadrático medio al simular métricas de estabilidad y prestaciones de células SRAM se reduce un mínimo de 1,5 veces y hasta un máximo de 7,5 a la vez que la estimación de la probabilidad de fallo se mejora en varios ordenes de magnitud. El diseño para bajo consumo es una de las principales aplicaciones actuales dada la creciente importancia de los dispositivos móviles dependientes de baterías. Es igualmente necesario debido a las importantes densidades de potencia en los sistemas actuales, con el fin de reducir su disipación térmica y sus consecuencias en cuanto al envejecimiento. El método tradicional de reducir la tensión de alimentación para reducir el consumo es problemático en el caso de las memorias SRAM dado el creciente impacto de la variabilidad a bajas tensiones. Se propone el diseño de una célula que usa valores negativos en la bit-line para reducir los fallos de escritura según se reduce la tensión de alimentación principal. A pesar de usar una segunda fuente de alimentación para la tensión negativa en la bit-line, el diseño propuesto consigue reducir el consumo hasta en un 20 % comparado con una célula convencional. Una nueva métrica, el hold trip point se ha propuesto para prevenir nuevos tipos de fallo debidos al uso de tensiones negativas, así como un método alternativo para estimar la velocidad de lectura, reduciendo el número de simulaciones necesarias. Según continúa la reducción del tamaño de los dispositivos electrónicos, se incluyen nuevos mecanismos que permiten facilitar el proceso de fabricación, o alcanzar las prestaciones requeridas para cada nueva generación tecnológica. Se puede citar como ejemplo el estrés compresivo o extensivo aplicado a los fins en tecnologías FinFET, que altera la movilidad de los transistores fabricados a partir de dichos fins. Los efectos de estos mecanismos dependen mucho del layout, la posición de unos transistores afecta a los transistores colindantes y pudiendo ser el efecto diferente en diferentes tipos de transistores. Se propone el uso de una célula SRAM complementaria que utiliza dispositivos pMOS en los transistores de paso, así reduciendo la longitud de los fins de los transistores nMOS y alargando los de los pMOS, extendiéndolos a las células vecinas y hasta los límites de la matriz de células. Considerando los efectos del STI y estresores de SiGe, el diseño propuesto mejora los dos tipos de transistores, mejorando las prestaciones de la célula SRAM complementaria en más de un 10% para una misma probabilidad de fallo y un mismo consumo estático, sin que se requiera aumentar el área. Finalmente, la radiación ha sido un problema recurrente en la electrónica para aplicaciones espaciales, pero la reducción de las corrientes y tensiones de los dispositivos actuales los está volviendo vulnerables al ruido generado por radiación, incluso a nivel de suelo. Pese a que tecnologías como SOI o FinFET reducen la cantidad de energía colectada por el circuito durante el impacto de una partícula, las importantes variaciones de proceso en los nodos más pequeños va a afectar su inmunidad frente a la radiación. Se demuestra que los errores inducidos por radiación pueden aumentar hasta en un 40 % en el nodo de 7nm cuando se consideran las variaciones de proceso, comparado con el caso nominal. Este incremento es de una magnitud mayor que la mejora obtenida mediante el diseño de células de memoria específicamente endurecidas frente a radiación, sugiriendo que la reducción de la variabilidad representaría una mayor mejora. ABSTRACT Reliability is becoming the main concern on integrated circuit as the technology goes beyond 22nm. Small imperfections in the device manufacturing result now in important random differences of the devices at electrical level which must be dealt with during the design. New processes and materials, required to allow the fabrication of the extremely short devices, are making new effects appear resulting ultimately on increased static power consumption, or higher vulnerability to radiation SRAMs have become the most vulnerable part of electronic systems, not only they account for more than half of the chip area of nowadays SoCs and microprocessors, but they are critical as soon as different variation sources are regarded, with failures in a single cell making the whole memory fail. This thesis addresses the different challenges that SRAM design has in the smallest technologies. In a common scenario of increasing variability, issues like energy consumption, design aware of the technology and radiation hardening are considered. First, given the increasing magnitude of device variability in the smallest nodes, as well as new sources of variability appearing as a consequence of new devices and shortened lengths, an accurate modeling of the variability is crucial. We propose to extend the injectors method that models variability at circuit level, abstracting its physical sources, to better model sub-threshold slope and drain induced barrier lowering that are gaining importance in FinFET technology. The two new proposed injectors bring an increased accuracy of figures of merit at different abstraction levels of electronic design, at transistor, gate and circuit levels. The mean square error estimating performance and stability metrics of SRAM cells is reduced by at least 1.5 and up to 7.5 while the yield estimation is improved by orders of magnitude. Low power design is a major constraint given the high-growing market of mobile devices that run on battery. It is also relevant because of the increased power densities of nowadays systems, in order to reduce the thermal dissipation and its impact on aging. The traditional approach of reducing the voltage to lower the energy consumption if challenging in the case of SRAMs given the increased impact of process variations at low voltage supplies. We propose a cell design that makes use of negative bit-line write-assist to overcome write failures as the main supply voltage is lowered. Despite using a second power source for the negative bit-line, the design achieves an energy reduction up to 20% compared to a conventional cell. A new metric, the hold trip point has been introduced to deal with new sources of failures to cells using a negative bit-line voltage, as well as an alternative method to estimate cell speed, requiring less simulations. With the continuous reduction of device sizes, new mechanisms need to be included to ease the fabrication process and to meet the performance targets of the successive nodes. As example we can consider the compressive or tensile strains included in FinFET technology, that alter the mobility of the transistors made out of the concerned fins. The effects of these mechanisms are very dependent on the layout, with transistor being affected by their neighbors, and different types of transistors being affected in a different way. We propose to use complementary SRAM cells with pMOS pass-gates in order to reduce the fin length of nMOS devices and achieve long uncut fins for the pMOS devices when the cell is included in its corresponding array. Once Shallow Trench isolation and SiGe stressors are considered the proposed design improves both kinds of transistor, boosting the performance of complementary SRAM cells by more than 10% for a same failure probability and static power consumption, with no area overhead. While radiation has been a traditional concern in space electronics, the small currents and voltages used in the latest nodes are making them more vulnerable to radiation-induced transient noise, even at ground level. Even if SOI or FinFET technologies reduce the amount of energy transferred from the striking particle to the circuit, the important process variation that the smallest nodes will present will affect their radiation hardening capabilities. We demonstrate that process variations can increase the radiation-induced error rate by up to 40% in the 7nm node compared to the nominal case. This increase is higher than the improvement achieved by radiation-hardened cells suggesting that the reduction of process variations would bring a higher improvement.

Heat transfer to power-law fluids in thermal entrance region with viscous dissipation for constant heat flux conditions

An analytical solution of the heat transfer problem with viscous dissipation for non-Newtonian fluids with power-law model in the thermal entrance region of a circular pipe and two parallel plates under constant heat flux conditions is obtained using eigenvalue approach by suitably replacing one of the boundary conditions by total energy balance equation. Analytical expressions for the wall and the bulk temperatures and the local Nusselt number are presented. The results are in close agreement with those obtained by implicit finite-difference scheme. It is found that the role of viscous dissipation on heat transfer is completely different for heating and cooling conditions at the wall. The results for the case of cooling at the wall are of interest in the design of the oil pipe line.

Stability, viscous dissipation and local thermal non-equilibrium in fluid saturated porous media

In this thesis, the field of study related to the stability analysis of fluid saturated porous media is investigated. In particular the contribution of the viscous heating to the onset of convective instability in the flow through ducts is analysed. In order to evaluate the contribution of the viscous dissipation, different geometries, different models describing the balance equations and different boundary conditions are used. Moreover, the local thermal non-equilibrium model is used to study the evolution of the temperature differences between the fluid and the solid matrix in a thermal boundary layer problem. On studying the onset of instability, different techniques for eigenvalue problems has been used. Analytical solutions, asymptotic analyses and numerical solutions by means of original and commercial codes are carried out.

Entropy generation for microscale forced convection: effects of different thermal boundary conditions, velocity slip, temperature jump, viscous dissipation, and duct geometry

This work presents closed form solutions for fully developed temperature distribution and entropy generation due to forced convection in microelectromechanical systems (MEMS) in the Slip-flow regime, for which the Knudsen number lies within the range 0.001

Natural convection adjacent to an inclined flat plate and in an attic space under various thermal forcing conditions

The effect of viscous dissipation on natural convection from a vertical plate placed in a thermally stratified environment has been investigated numerically. The reduced equations are integrated by employing the implicit finite difference scheme or Ke1ler-box method and obtained the effect of heat due to viscous dissipation on the local skin-friction and loca1 Nusselt number at various stratification levels, for fluids having Prandtl number equals 10, 50, and 100. Solutions are also obtained using the perturbation technique for small values of viscous dissipation parameters and compared with the Finite Difference solutions. Effect of the heat transfer due to viscous dissipation and the temperature stratification are also shown on the velocity and temperature distributions in the boundary layer region. A numerical study of laminar doubly diffusive free convection flows adjacent to a vertical surface in a stable thermally stratified medium is also considered for this study. Solutions are obtained using the implicit Finite Difference method and compared with the local non-similarity method. The velocity and temperature distributions for different values of stratification parameter are shown graphically. The results show many interesting aspects of complex interaction of the two buoyant mechanisms.

Thermal sensitivity analysis of spacecraft battery

Transient thermal sensitivity is studied for systems that are subjected to conductive heat transfer within themselves and radiative heat transfer with the surrounding environment, including solar heat radiation, The battery in the Indian national communication satellite is one such system for which the studies are conducted with respect to panel conduction, conductance of insulating blanket, power dissipation within the battery, and absorptance and emittance of various elements, Comparison of sensitivities revealed that battery temperature is sensitive to its power dissipation during the beginning of life of the spacecraft, whereas toward the end of life of the spacecraft mission, the effect of absorptance of optical solar reflector is dominating, The influence of optical property values of the multilayer insulation blanket is almost negligible. Among the parameters studied in this analysis, the battery temperature is found to be mast sensitive to emittance of the optical solar reflector.

Fully developed thermal transport in combined pressure and electroosmotically driven flow of nanofluid in a microchannel under the effect of a magnetic field

This paper critically analyzes, for the first time, the effect of nanofluid on thermally fully developed magnetohydrodynamic flows through microchannel, by considering combined effects of externally applied pressure gradient and electroosmosis. The classical boundary condition of uniform wall heat flux is considered, and the effects of viscous dissipation as well as Joule heating have been taken into account. Closed-form analytical expressions for the pertinent velocity and temperature distributions and the Nusselt number variations are obtained, in order to examine the role of nanofluids in influencing the fully developed thermal transport in electroosmotic microflows under the effect of magnetic field. Fundamental considerations are invoked to ascertain the consequences of particle agglomeration on the thermophysical properties of the nanofluid. The present theoretical formalism addresses the details of the interparticle interaction kinetics in tune with the pertinent variations in the effective particulate dimensions, volume fractions of the nanoparticles, as well as the aggregate structure of the particulate system. It is revealed that the inclusion of nanofluid changes the transport characteristics and system irreversibility to a considerable extent and can have significant consequences in the design of electroosmotically actuated microfluidic systems.

Thermal transport in high porosity cellular metal foams

The heat dissipation capability of highly porous cellular metal foams with open cells subject to forced air convection is studied using a combined experimental and analytical approach. The cellular morphologies of six FeCrAlY (an iron-based alloy) foams and six copper alloy foams with a range of pore sizes and porosities are quantified with the scanning electronic microscope and image analysis. Experimental measurements on pressure drop and heat transfer for copper foams are carried out. A numerical model for forced convection across open-celled metal foams is subsequently developed, and the predictions are compared with those measured. Reasonably good agreement with test data is obtained, given the complexity of the cellular foam morphology and the associated momentum/energy transport. The results show that cell size has a more significant effect on the overall heat transfer than porosity. An optimal porosity is obtained based on the balance between pressure drop and overall heat transfer, which decreases as the Reynolds number is increased.

Convective heat dissipation with lattice-frame materials

This paper presents experimental results on heat transfer and pressure drop for a compact heat sink made of fully triangulated, lightweight (porosity∼0.938), aluminum lattice-frame materials (LFMs). Due to the inherent structural anisotropy of the LFMs, two mutually perpendicular orientations were selected for the measurements. Constant heat flux was applied to the heat sink under steady state conditions, and dissipated by forced air convection. The experimental data were compared with those predicted from an analytical model based on fin analogy. The experimental results revealed that pressure drop is strongly dependent upon the orientation of the structure, due mainly to the flow blockage effect. For heat transfer measurements, typical local temperature distributions on the substrate under constant heat flux conditions were captured with infrared camera. The thermal behavior of LFMs was found to follow closely that of cylinder banks, with early transition Reynolds number (based on strut diameter) equal to about 300. The Nusselt number prediction from the fin-analogy correlates well with experimental measurements, except at low Reynolds numbers where a slightly underestimation is observed. Comparisons with empty channels and commonly used heat exchanger media show that the present LFM heat sink can remove heat approximately seven times more efficient than an empty channel and as efficient as a bank of cylinders at the same porosity level. The aluminum LFMs are extremely stiff and strong, making them ideal candidates for multifunctional structures requiring both heat dissipation and mechanical load carrying capabilities. © 2003 Elsevier Ltd. All rights reserved.

Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be similar to 0.2 and 200 cm(-1), respectively, for the InGaN QDs. (c) 2006 American Institute of Physics.