Test Application Time Minimization for RAS using Basis Optimization of Column Decoder

Random Access Scan, which addresses individual flip-flops in a design using a memory array like row and column decoder architecture, has recently attracted widespread attention, due to its potential for lower test application time, test data volume and test power dissipation when compared to traditional Serial Scan. This is because typically only a very limited number of random ``care'' bits in a test response need be modified to create the next test vector. Unlike traditional scan, most flip-flops need not be updated. Test application efficiency can be further improved by organizing the access by word instead of by bit. In this paper we present a new decoder structure that takes advantage of basis vectors and linear algebra to further significantly optimize test application in RAS by performing the write operations on multiple bits consecutively. Simulations performed on benchmark circuits show an average of 2-3 times speed up in test write time compared to conventional RAS.

Low electric field, easily reversible electrical set and reset processes in a Ge15Te83Si2 glass for phase change memory applications

We report here an easily reversible set-reset process in a new Ge15Te83Si2 glass that could be a promising candidate for phase change random access memory applications. The I-V characteristics of the studied sample show a comparatively low threshold electric field (E-th) of 7.3 kV/cm. Distinct differences in the type of switching behavior are achieved by means of controlling the on state current. It enables the observation of a threshold type for less than 0.7 mA beyond memory type (set) switching. The set and reset processes have been achieved with a similar magnitude of 1 mA, and with a triangular current pulse for the set process and a short duration rectangular pulse of 10 msec width for the reset operation. Further, a self-resetting effect is seen in this material upon excitation with a saw-tooth/square pulse, and their response of leading and trailing edges are discussed. About 6.5 x 10(4) set-reset cycles have been undertaken without any damage to the device. (C) 2011 American Institute of Physics. doi: 10.1063/1.3574659]

Study of thickness dependence on electrical properties of (Pb,La)TiO3 thin films for memory applications

Lead-lanthanum-titanate (Pb0.72La0.28)TiO3 (PLT) is one of the interesting materials for DRAM applications due to its room temperature paraelectric nature and its higher dielectric permittivity. PLT thin films of different thickness ranging from 0.54- 0.9 mum were deposited on Pt coated Si substrates by excimer laser ablation technique. We have measured the voltage (field) dependence, the thickness dependence, temperature dependence of dc leakage currents and analysis is done on these PLT thin films. Current- voltage characteristics were measured at different temperatures for different thick films and the thickness dependence of leakage current has been explained by considering space charge limited conduction mechanism. The charge transport phenomena were studied in detail for films of different thicknesses for dynamic random access memory applications.

Transmission electron microscopy study of domain structures in ferroelectric SrBi2Nb2O9 ceramics

A transmission electron microscopy study has been carried out on the domain structures of SrBi2Nb2O9 (SBN) ferroelectric ceramics which belong to the Aurivillius family of bismuth layered perovskite oxides. SBN is a potential candidate for Ferroelectric Random access memory (FeRAM) applications. The 90° ferroelectric domains and antiphase boundaries (APBs) were identified with dark field imaging techniques using different superlattice reflections which arise as a consequence of octahedral rotations and cationic shifts. The 90° domain walls are irregular in shape without any faceting. The antiphase boundaries are less dense compared to that of SrBi2Ta2O9(SBT). The electron microscopy observations are correlated with the polarization fatigue nature of the ceramic where the domain structures possibly play a key role in the fatigue- free behavior of the Aurivillius family of ferroelectric oxides.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

Network Coding for TCP Throughput Enhancement over a Multi-Hop wireless Network

The poor performance of TCP over multi-hop wireless networks is well known. In this paper we explore to what extent network coding can help to improve the throughput performance of TCP controlled bulk transfers over a chain topology multi-hop wireless network. The nodes use a CSMA/ CA mechanism, such as IEEE 802.11’s DCF, to perform distributed packet scheduling. The reverse flowing TCP ACKs are sought to be X-ORed with forward flowing TCP data packets. We find that, without any modification to theMAC protocol, the gain from network coding is negligible. The inherent coordination problem of carrier sensing based random access in multi-hop wireless networks dominates the performance. We provide a theoretical analysis that yields a throughput bound with network coding. We then propose a distributed modification of the IEEE 802.11 DCF, based on tuning the back-off mechanism using a feedback approach. Simulation studies show that the proposed mechanism when combined with network coding, improves the performance of a TCP session by more than 100%.

Optimizing Delay in Sequential Change Detection on Ad Hoc Wireless Sensor Networks

We consider the classical problem of sequential detection of change in a distribution (from hypothesis 0 to hypothesis 1), where the fusion centre receives vectors of periodic measurements, with the measurements being i.i.d. over time and across the vector components, under each of the two hypotheses. In our problem, the sensor devices ("motes") that generate the measurements constitute an ad hoc wireless network. The motes contend using a random access protocol (such as CSMA/CA) to transmit their measurement packets to the fusion centre. The fusion centre waits for vectors of measurements to accumulate before taking decisions. We formulate the optimal detection problem, taking into account the network delay experienced by the vectors of measurements, and find that, under periodic sampling, the detection delay decouples into network delay and decision delay. We obtain a lower bound on the network delay, and propose a censoring scheme, where lagging sensors drop their delayed observations in order to mitigate network delay. We show that this scheme can achieve the lower bound. This approach is explored via simulation. We also use numerical evaluation and simulation to study issues such as: the optimal sampling rate for a given number of sensors, and the optimal number of sensors for a given measurement rate

Distributed load adaptive scheduling for throughput and delay guarantees in fading wireless LANs

We consider a problem of providing mean delay and average throughput guarantees in random access fading wireless channels using CSMA/CA algorithm. This problem becomes much more challenging when the scheduling is distributed as is the case in a typical local area wireless network. We model the CSMA network using a novel queueing network based approach. The optimal throughput per device and throughput optimal policy in an M device network is obtained. We provide a simple contention control algorithm that adapts the attempt probability based on the network load and obtain bounds for the packet transmission delay. The information we make use of is the number of devices in the network and the queue length (delayed) at each device. The proposed algorithms stay within the requirements of the IEEE 802.11 standard.

Delay Optimal Event Detection on Ad Hoc Wireless Sensor Networks

We consider a small extent sensor network for event detection, in which nodes periodically take samples and then contend over a random access network to transmit their measurement packets to the fusion center. We consider two procedures at the fusion center for processing the measurements. The Bayesian setting, is assumed, that is, the fusion center has a prior distribution on the change time. In the first procedure, the decision algorithm at the fusion center is network-oblivious and makes a decision only when a complete vector of measurements taken at a sampling instant is available. In the second procedure, the decision algorithm at the fusion center is network-aware and processes measurements as they arrive, but in a time-causal order. In this case, the decision statistic depends on the network delays, whereas in the network-oblivious case, the decision statistic does not. This yields a Bayesian change-detection problem with a trade-off between the random network delay and the decision delay that is, a higher sampling rate reduces the decision delay but increases the random access delay. Under periodic sampling, in the network-oblivious case, the structure of the optimal stopping rule is the same as that without the network, and the optimal change detection delay decouples into the network delay and the optimal decision delay without the network. In the network-aware case, the optimal stopping problem is analyzed as a partially observable Markov decision process, in which the states of the queues and delays in the network need to be maintained. A sufficient decision statistic is the network state and the posterior probability of change having occurred, given the measurements received and the state of the network. The optimal regimes are studied using simulation.

Signatures of Ge2Sb2Te5 film at structural transitions

Ge2Sb2Te5 (GST) films, one of the most suitable Chalcogenide alloys for Phase change Random Access Memory applications are studied for changes in sheet resistance, optical transmission, morphology and surface science by annealing at various transition temperatures. The crystallization leads to an increase of grain size and roughness in the films and the resistance changes to three orders of magnitude. Optical studies on GST films show distinct changes during phase transitions and the optical parameters are calculated. An increase of Tauc parameters B-1/2 indicates a reduction in disorder during phase transition. It is confirmed from XPS studies that Ge-Te, Sb-Te bonds are present in both amorphous and crystalline phases whereas Sb-Ge, Te-Te, Sb-Sb bonds are absent. (C) 2012 Elsevier B.V. All rights reserved.

Comparison of performance of OCDMA networks with correlation and chiplevel receivers

In this paper optical code-division multiple-access (O-CDMA) packet network is considered, which offers inherent security in the access networks. Two types of random access protocols are proposed for packet transmission. In protocol 1, all distinct codes and in protocol 2, distinct codes as well as shifted versions of all these codes are used. O-CDMA network performance using optical orthogonal codes (OOCs) 1-D and two-dimensional (2-D) wavelength/time single-pulse-per-row (W/T SPR) codes are analyzed. The main advantage of using 2-D codes instead of one-dimensional (1-D) codes is to reduce the errors due to multiple access interference among different users. In this paper, correlation receiver and chip-level receiver are considered in the analysis. Using analytical model, we compute packet-success probability, throughput and compare for OOC and SPR codes in an O-CDMA network and the analysis shows improved performance with SPR codes as compared to OOC codes.

W/T SPR codes offer higher throughput in OCDMA networks

In this paper optical code-division multiple-access (O-CDMA) packet network is considered, which offers inherent security in the access networks. Two types of random access protocols are proposed for packet transmission. In protocol 1, all distinct codes and in protocol 2, distinct codes as well as shifted versions of all these codes are used. O-CDMA network performance using optical orthogonal codes (OOCs) 1-D and two-dimensional (2-D) wavelength/time single-pulse-per-row (W/T SPR) codes are analyzed. The main advantage of using 2-D codes instead of one-dimensional (1-D) codes is to reduce the errors due to multiple access interference among different users. SPR codes are chosen as they have nearly ideal correlation properties. In this paper, correlation receiver is considered in the analysis. Using analytical model, we compare the OOC and SPR code performances in O-CDMA networks. We compute packet-success probability and throughput for both the types of codes. The analysis shows improved performance with SPR codes as compared to OOC codes.

Analysis of MAC protocols with correlation receiver for optical CDMA networks – part I

In this paper optical code-division multiple-access (O-CDMA) packet network is considered. Two types of random access protocols are proposed for packet transmission. In protocol 1, all distinct codes and in protocol 2, distinct codes as well as shifted versions of all these codes are used. O-CDMA network performance using optical orthogonal codes (OOCs) 1-D and twodimensional (2-D) wavelength/time single-pulse-per-row (W/TSPR) codes are analyzed. The main advantage of using 2-D codes instead of one-dimensional (1-D) codes is to reduce the errors due to multiple access interference among different users. In this paper, correlation receiver is considered in the analysis. Using analytical model, we compute and compare packet-success probability for 1-D and 2-D codes in an O-CDMA network and the analysis shows improved performance with 2-D codes as compared to 1-D codes.

Better QOS with W/T SPR codes for the transmission of multimedia signals in Optical CDMA networks

In this paper optical code-division multiple-access (O-CDMA) packet network is considered, which offers inherent security in the access networks. The application of O-CDMA to multimedia transmission (voice, data, and video) is investigated. The simultaneous transmission of various services is achieved by assigning to each user unique multiple code signatures. Thus, by applying a parallel mapping technique, we achieve multi-rate services. A random access protocol is proposed, here, where all distinct codes are used, for packet transmission. The codes, Optical Orthogonal Code (OOC), or 1D codes and Wavelength/Time Single-Pulse-per-Row (W/T SPR), or 2D codes, are analyzed. These 1D and 2D codes with varied weight are used to differentiate the Quality of Service (QoS). The theoretical bit error probability corresponding to the quality of each service is established using 1D and 2D codes in the receiver noiseless case and compared. The results show that, using 2D codes QoS in multimedia transmission is better than using 1D codes.