903 resultados para Radio-frequency power


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Radio frequency plasma enhanced chemical vapor deposition is currently used to fabricate a broad range of functional coatings. This work described fabrication and characterization of a novel bioactive coating, polyterpenol, for encapsulation of three-dimensional indwelling medical devices. The materials are synthesized from monoterpene alcohols under different input power conditions. The chemical composition and structure of the polyterpenol thin films were determined by Xray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, contact angle measurements, and atomic force microscopy (AFM). The application of polyterpenol coating to the substrate reduced surface roughness from 1.5 to 0.4 of a nanometer, and increased the water contact angle from to 9 to 72 degrees. The extent of attachment and extracellular polysaccharide (EPS) production of two medically relevant pathogens, Staphylococcus aureus and Staphylococcus epidermis were analyzed using scanning electron microscopy (SEM) and confocal scanning laser microscopy (CSLM). Application of polyterpenol coating fabricated at 10 W significantly inhibited attachment and growth of both pathogens compared to unmodified substrates, whilst addition of 50 W films resulted in an increased attachment, proliferation and EPS production by both types of bacteria when compared to unmodified surface. Marked dissimilarity in bacterial response between two coatings was attributed to changes in surface chemistry, nano-architecture and surface energy of polymer thin films deposited under different input power conditions.

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Hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality mu c-Si:H films have been achieved with a high deposition rate of 7.8 angstrom/s at a high pressure. The V-oc of 560 mV and the FF of 0.70 have been achieved for a single-junction mu c-Si:H p-i-n solar cell at a deposition rate of 7.8 angstrom/s.

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Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400 degrees C, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.

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Phase resolved optical emission spectroscopy, with high temporal resolution, shows that wave-particle interactions play a fundamental role in sustaining capacitively coupled rf plasmas. The measurements are in excellent agreement with a simple particle-in-cell simulation. Excitation and ionization mechanisms are dominated by beam-like electrons, energized through the advancing and retreating electric fields of the rf sheath. The associated large-amplitude electron waves, driven by a form of two-stream instability, result in power dissipation through electron trapping and phase mixing. (c) 2007 American Institute of Physics.

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Changes of the electron dynamics during the mode transition (E- to H-mode) in a hydrogen radio-frequency (rf) inductively coupled plasma are investigated using space and phase resolved optical emission spectroscopy. The E- mode is characterized through relatively weak optical emission which is strongly modulated on a nanosecond time scale during the rf-cycle, with one pronounced maximum per cycle. The modulation in H-mode, with twice the rf-frequency, is significantly weaker while the emission intensities are about two orders of magnitude higher. In particular the transition between these two modes is studied under variations of rf-power input and gas pressure. Characteristic spatio-temporal structures are observed and can be understood in the frame of a simple model combining both coupling mechanisms in the transition regime.

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The electron dynamics in the low-pressure operation regime ($«$ 5 Pa) of a neon capacitively coupled plasma is investigated using phase-resolved optical emission spectroscopy. Plasma ionization and sustainment mechanisms are governed by the expanding and contracting sheath and complex wave–particle interactions. Electrons are energized through the advancing and retreating electric field of the RF sheath. The associated interaction of energetic sheath electrons with thermal bulk plasma electrons drives a two-stream instability also dissipating power in the plasma.

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Two electrical techniques that are frequently used to characterize radio frequency plasmas are described: current-voltage probes for plasma power input and compensated Langmuir probes for electron energy probability functions and other parameters. The following examples of the use of these techniques, sometimes in conjunction with other diagnostic methods, are presented: plasma source standardization, plasma system comparison, power efficiency, plasma modelling and complex processing plasma mechanisms.

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Inductively coupled radio-frequency plasmas can be operated in two distinct modes. At low power and comparatively low plasma densities the plasma is sustained in capacitive mode (E-mode). As the plasma density increases a transition to inductive mode (H-mode) is observed. This transition region is of particular interest and governed by non-linear dynamics, which under certain conditions results in structure formation with strong spatial gradients in light emission. These modes show pronounced differences is various measureable quantities e.g. electron densities, electron energy distribution functions, ion energy distribution functions, dynamics of optical light emission. Here the transition from E- to H- mode in an oxygen containing inductively coupled plasma (ICP) is investigated using space and phase resolved optical emission spectroscopy (PROES). The emission, measured phase resolved, allows investigation of the electron dynamics within the rf cycle, important for understanding the power coupling and ionization mechanisms in the discharge. The temporal variation of the emission reflects the dynamics of relatively high-energy electrons. It is possible to distinguish between E- and H-mode from the intensity and temporal behaviour of the emission.

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Plasma ionization, and associated mode transitions, in dual radio-frequency driven atmospheric pressure plasmas are governed through nonlinear frequency coupling in the dynamics of the plasma boundary sheath. Ionization in low-power mode is determined by the nonlinear coupling of electron heating and the momentary local plasma density. Ionization in high-power mode is driven by electron avalanches during phases of transient high electric fields within the boundary sheath. The transition between these distinctly different modes is controlled by the total voltage of both frequency components.

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The complex dynamics of ionization and excitation mechanisms in capacitively coupled radio-frequency plasmas is discussed for single- and dual-frequency operations in low-pressure and atmospheric pressure plasmas. Electrons are energized through the dynamics of electric fields in the vicinity of the plasma boundary sheaths. Distinctly different power dissipation mechanisms can either co-exist or initiate mode transitions exhibiting characteristic spatio-temporal ionization structures. Phase resolved optical emission spectroscopy, in combination with adequate modelling of the population dynamics of excited states, and numerical simulations reveal dissipation associated with sheath expansion, sheath collapse, transient electron avalanches and wave–particle interactions. In dual-frequency systems the relative phase between the two frequency components provides additional strategies to tailor the plasma dynamics.

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Atomic oxygen formation in a radio-frequency driven micro-atmospheric pressure plasma jet is investigated using both advanced optical diagnostics and numerical simulations of the dynamic plasma chemistry. Laser spectroscopic measurements of absolute densities of ground state atomic oxygen reveal steep gradients at the interface between the plasma core and the effluent region. Spatial profiles resolving the interelectrode gap within the core plasma indicate that volume processes dominate over surface reactions. Details of the production and destruction processes are investigated in numerical simulations benchmarked by phase-resolved optical emission spectroscopy. The main production mechanisms are electron induced and hence most efficient in the vicinity of the plasma boundary sheath, where electrons are energized. The destruction is driven through chemical heavy particle reactions. The resulting spatial profile of atomic oxygen is relatively flat. The power dependence of the atomic oxygen density obtained by the numerical simulation is in very good agreement with the laser spectroscopic measurements.

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Continuing achievements in hardware technology are bringing ubiquitous computing closer to reality. The notion of a connected, interactive and autonomous environment is common to all sensor networks, biosystems and radio frequency identification (RFID) devices, and the emergence of significant deployments and sophisticated applications can be expected. However, as more information is collected and transmitted, security issues will become vital for such a fully connected environment. In this study the authors consider adding security features to low-cost devices such as RFID tags. In particular, the authors consider the implementation of a digital signature architecture that can be used for device authentication, to prevent tag cloning, and for data authentication to prevent transmission forgery. The scheme is built around the signature variant of the cryptoGPS identification scheme and the SHA-1 hash function. When implemented on 130 nm CMOS the full design uses 7494 gates and consumes 4.72 mu W of power, making it smaller and more power efficient than previous low-cost digital signature designs. The study also presents a low-cost SHA-1 hardware architecture which is the smallest standardised hash function design to date.

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The electron dynamics in a planar coil inductively coupled plasma (ICP) system with a capacitively biased electrode is investigated using space and phase resolved optical emission spectroscopy. The two power source frequencies are exact multiple of each other and phase-locked. In this configuration, the system is investigated when the coil is operated in both E-mode and H-mode. The results show that in a phase synchronized RF biased ICP, the electrode bias power couples with the capacitive contribution of the coil, in both E-mode and H-modes, similar to dual-frequency capacitively coupled plasmas (2f-CCPs). It is also demonstrated that in H-mode, the phase between the electrode bias frequency and the ICP coil frequency influences the electron heating, similar to the electrical asymmetry effect in 2f-CCPs.

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The paper details on-chip inductor optimization for a reconfigurable continuous-time delta-sigma (Δ-Σ) modulator based radio-frequency analog-to-digital converter. Inductor optimisation enables the Δ-Σ modulator with Q enhanced LC tank circuits employing a single high Q-factor on-chip inductor and lesser quantizer levels thereby reducing the circuit complexity for excess loop delay, power dissipation and dynamic element matching. System level simulations indicate at a Q-factor of 75 Δ- Σ modulator with a 3-level quantizer achieves dynamic ranges of 106, 82 dB and 84 dB for RFID, TETRA, and Galileo over bandwidths of 200 kHz, 10 MHz and 40 MHz respectively.