Design, analysis and implementation of a versatile low level radio frequency system for accelerating cavities

179 p.

Radio frequency studies of surface resistance and critical magnetic field of type I and type II superconductors

The surface resistance and the critical magnetic field of lead electroplated on copper were studied at 205 MHz in a half-wave coaxial resonator. The observed surface resistance at a low field level below 4.2°K could be well described by the BCS surface resistance with the addition of a temperature independent residual resistance. The available experimental data suggest that the major fraction of the residual resistance in the present experiment was due to the presence of an oxide layer on the surface. At higher magnetic field levels the surface resistance was found to be enhanced due to surface imperfections.

The attainable rf critical magnetic field between 2.2°K and T_c of lead was found to be limited not by the thermodynamic critical field but rather by the superheating field predicted by the one-dimensional Ginzburg-Landau theory. The observed rf critical field was very close to the expected superheating field, particularly in the higher reduced temperature range, but showed somewhat stronger temperature dependence than the expected superheating field in the lower reduced temperature range.

The rf critical magnetic field was also studied at 90 MHz for pure tin and indium, and for a series of SnIn and InBi alloys spanning both type I and type II superconductivity. The samples were spherical with typical diameters of 1-2 mm and a helical resonator was used to generate the rf magnetic field in the measurement. The results of pure samples of tin and indium showed that a vortex-like nucleation of the normal phase was responsible for the superconducting-to-normal phase transition in the rf field at temperatures up to about 0.98-0.99 T_c' where the ideal superheating limit was being reached. The results of the alloy samples showed that the attainable rf critical fields near T_c were well described by the superheating field predicted by the one-dimensional GL theory in both the type I and type II regimes. The measurement was also made at 300 MHz resulting in no significant change in the rf critical field. Thus it was inferred that the nucleation time of the normal phase, once the critical field was reached, was small compared with the rf period in this frequency range.

Trapping of neutral atoms with a radio-frequency field

Based on the dressed-atom approach, we discuss a two-dimensional (2D) radio-frequency trap for neutral atoms, in which the trap potential derives from the magnetic-dipole transition among the hyperfine Zeeman sublevels. By adjusting the detuning of the radiation from resonance, the trapping states will be changed predominantly from the bare states Of m(FgF) > 0 to other states of m(FgF) < 0, where m(F) and g(F) are the quantum numbers of Zeeman sublevels and the Lande factor, respectively. This character contrasts finely with that, of a static magnetic, trap that can only trap or guide the states of m(FgF) > 0. In comparison to the optical field, the radio-frequency trap eliminates the spontaneous emission heating of the atoms. Unlike other oscillating traps reported in the e literature, the configuration of the radio-frequency trap is suitable for realization of a miniature magnetic guide.

Surface planar ion chip for linear radio-frequency Paul traps

We propose a surface planar ion chip which forms a linear radio frequency Paul ion trap. The electrodes reside in the two planes of a chip, and the trap axis is located above the chip surface. Its electric field and potential distribution are similar to the standard linear radio frequency Paul ion trap. This ion trap geometry may be greatly meaningful for quantum information processing.

A radio frequency field guide using field induced adiabatic potential

We study the behaviour of atoms in a field with both static magnetic field and radio frequency (rf) magnetic field. We calculate the adiabatic potential of atoms numerically beyond the usually rotating wave approximation, and it is pointed that there is a great difference between using these two methods. We find the preconditions when RWA is valid. In the extreme of static field almost parallel to rf field, we reach an analytic formula. Finally, we apply this method to Rb-87 and propose a guide based on an rf field on atom chip.

A Novel Micro- and Nano-Scale Positioning Sensor Based on Radio Frequency Resonant Cavities

In many micro- and nano-scale technological applications high sensitivity displacement sensors are needed, especially in ultraprecision metrology and manufacturing. In this work a new way of sensing displacement based on radio frequency resonant cavities is presented and experimentally demonstrated using a first laboratory prototype. The principle of operation of the new transducer is summarized and tested. Furthermore, an electronic interface that can be used together with the displacement transducer is designed and proved. It has been experimentally demonstrated that very high and linear sensitivity characteristic curves, in the range of some kHz/nm; are easily obtainable using this kind of transducer when it is combined with a laboratory network analyzer. In order to replace a network analyzer and provide a more affordable, self-contained, compact solution, an electronic interface has been designed, preserving as much as possible the excellent performance of the transducer, and turning it into a true standalone positioning sensor. The results obtained using the transducer together with a first prototype of the electronic interface built with cheap discrete elements show that positioning accuracies in the micrometer range are obtainable using this cost-effective solution. Better accuracies would also be attainable but using more involved and costly electronics interfaces.

Low temperature growth of c-axis oriented AlN films on gamma-LiAlO2 by radio frequency magnetron sputtering

Aluminum nitride (AlN) films were prepared on gamma-LiAlO2 substrates by radio frequency (rf) magnetron sputtering. The influence of substrate temperature (T-s) and nitrogen (N-2) concentration on film growth was investigated. The X-ray diffraction (XRD) results reveal that highly c-axis oriented AlN films can be obtained in the temperature range from room temperature (RT) to 300 degrees C. A smoother surface and a crystalline quality decrease with increasing N-2 concentration have been observed by XRD and atomic force microscopy (AFM) for the films deposited at lower substrate temperature. On the contrary, the degradation of the surface smoothness and the higher crystalline quality can be observed for the films deposited at a higher substrate temperature with N-2-rich ambient. The growth mechanism which leads to different crystalline quality of the films is discussed. (C) 2008 Elsevier B.V. All rights reserved.

Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications

Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100 nm, and the rms roughness is 20nm (AFM 5 x 5 mu m images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.