I. Configurational stability and redistribution equilibria in organomagnesium compounds. II. Redistribution equilibria in organocadmium compounds

I. CONFIGURATIONAL STABILITY AND REDISTRIBUTION EQUILIBRIA IN ORGANOMAGNESIUM COMPOUNDS

The dependence of the rate of inversion of a dialkylmagnesium compound on the solvent has been studied.

Examination of the temperature dependence of the nuclear magnetic resonance spectrum of 1-phenyl-2-propylmagnesium bromide in diethyl ether solution indicates that inversion of configuration at the methylene group of this Grignard reagent occurs with an approximate rate of 2 sec^-1 at room temperature. This is the first example of a rapid inversion rate in a secondary Grignard reagent.

The rates of exchange of alkyl groups between dineopentylmagnesium and di-s-butylmagnesium, bis-(2-methylbutyl)-magnesium and bis-(4, 4-dimethyl-2-pentyl)-magnesium respectively in diethyl ether solution were found to be fast on the nmr time scale. However, the alkyl group exchange rate was found to be slow in a diethyl ether solution of dineopentylmagnesium and bis-(2-methylbutyl)-magnesium containing N, N, N', N'-tetramethylethylenediamine. The unsymmetrical species neopentyl-2-methylbutyl-magnesium was observed at room temperature in the nmr spectrum of the solution containing the diamine.

II. REDISTRIBUTION EQUILIBRIA IN ORGANOCADMIUM COMPOUNDS

The exchange of methyl groups in dimethylcadmium has been studied by nuclear magnetic resonance spectroscopy. Activation parameters for the methyl group exchange have been measured for a neat sample and for a solution in tetrahydrofuran. The exchange is faster in the basic solvent tetrahydrofuran relative to the neat sample and in tetrahydrofuran solution is retarded by the solvating agent N, N, N’, N’-tetramethylethylenediamine and greatly increased by cadmium bromide. The addition of methanol to a solution of dimethylcadmium in tetrahydrofuran appears to have very little effect on the rate of exchange. The exchange was found to proceed with retention of configuration. The rate-limiting step for the exchange of methyl groups in a basic solvent appears to be the dissociation of coordinating solvent from dimethylcadmium.

The equilibrium between methylcadmium bromide, dimethylcadmium and cadmium bromide in tetrahydrofuran solution has also been studied. At room temperature the interconversion of the species is very fast on the nmr time scale but at -100° distinct absorptions for methylcadmium bromide and imethylcadmium are observed.

The species ethylmethylcadmium has been observed in the nmr spectrum.

The rate of exchange of vinyl groups in a solution of divinylcadmium in tetrahydrofuran has been found to be fast on the nmr time scale.

Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si

The fluorine redistribution during partial solid-phase-epitaxial-regrowth at 650°C of a preamorphized Si substrate implanted by F was investigated by atom probe tomography (APT), transmission electron microscopy, and secondary ions mass spectrometry. Three-dimensional spatial distribution of F obtained by APT provides a direct observation of F-rich clusters with a diameter of less than 1.5 nm. Density variation compatible with cavities and F-rich molecular ions in correspondence of clusters are in accordance with cavities filled by SiF 4 molecules. Their presence only in crystalline Si while they are not revealed by statistical analysis in amorphous suggests that they form at the amorphous/crystal interface. © 2012 American Institute of Physics.

Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si

The redistribution of fluorine during solid phase epitaxial regrowth (SPER) of preamorphized Si has been experimentally investigated, explained, and simulated, for different F concentrations and temperatures. We demonstrate, by a detailed analysis and modeling of F secondary ion mass spectrometry chemical-concentration profiles, that F segregates in amorphous Si during SPER by splitting in three possible states: (i) a diffusive one that migrates in amorphous Si; (ii) an interface segregated state evidenced by the presence of a F accumulation peak at the amorphous-crystal interface; (iii) a clustered F state. The interplay among these states and their roles in the F incorporation into crystalline Si are fully described. It is shown that diffusive F migrates by a trap limited diffusion mechanism and also interacts with the advancing interface by a sticking-release dynamics that regulates the amount of F segregated at the interface. We demonstrate that this last quantity determines the regrowth rate through an exponential law. On the other hand we show that neither the diffusive F nor the one segregated at the interface can directly incorporate into the crystal but F has to cluster in the amorphous phase before being incorporated in the crystal, in agreement with recent experimental observations. The trends of the model parameters as a function of the temperature are shown and discussed obtaining a clear energetic scheme of the F redistribution and incorporation in preamorphized Si. The above physical understanding and the model could have a strong impact on the use of F as a tool for optimizing the doping profiles in the fabrication of ultrashallow junctions. © 2010 The American Physical Society.

Pt redistribution in N-MOS transistors during Ni salicide process

Atom probe tomography was used to study the redistribution of platinum during Ni(10 at.%Pt) silicidation of n-doped polycrystalline Si. These measurements were performed after the two annealing steps of standard salicide process both on a field-effect transistor and on unpatterned region submitted to the same process. Very similar results are obtained in unpatterned region and in transistor gate contact. The first phase to form is not the expected δ-Ni2Si but the non stoichiometric θ-Ni2Si. Pt redistribution is strongly influenced by this phase and the final distribution is different from what is reported in literature. © 2013 Elsevier B.V. All rights reserved.

Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys

Temperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]. (C) 2001 American Institute of Physics.

Thermal redistribution of photocarriers between bimodal quantum dots

We study the photoluminescence (PL) properties of InAs/GaAs self-assembled quantum dots (QDs) by varying excitation power and temperature. Excitation power-dependent PL shows that there exists bimodal size distribution in the QD ensemble. Thermal carrier redistribution between the two branches of dots is observed and investigated in terms of the temperature dependence of their relative PL intensity. Based on a model in which carrier transfer between dots is facilitated by the wetting layer, the experimental results are well explained. (C) 2001 American Institute of Physics.

Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots

In this work we report the photoluminescence (PL) and interband absorption study of Si-modulation-doped multilayer InAs/GaAs quantum dots grown by molecular beam epitaxy (MBE) on (100) oriented GaAs substrates. Low-temperature PL shows a distinctive double-peak feature. Power-dependent PL and transmission electron microscopy (TEM) confirm that they stem from the ground states emission of islands of bimodal size distribution. Temperature-dependent PL study indicates that the family of small dots is ensemble effect dominated while the family of large dots is likely to be dominated by the intrinsic property of single quantum dots (QDs). The temperature-dependent PL and interband absorption measurements are discussed in terms of thermalized redistribution of the carriers among groups of QDs of different sizes in the ensemble. (C) 2000 Elsevier Science B.V. All rights reserved.