High-repetition-rate MHz acoustooptic Q-switched fiber laser

A simple actively Q-switched double-clad fiber laser combining an amplifying cavity is reported by using a dynamic acoustooptic Q-switching as a beam splitter. Sub-100-ns. pulses independence of the repetition rate of acoustooptic modulator are almost changeless with repetition rate varied from 50 kHz to 1.5 MHz. With 4.5-W absorbed power, 9.4-W peak-power pulses at 1.5-MHz repetition rate with 75-ns pulse duration are generated.

Passively Q-switched Yb3+ laser with Yb3+-doped CaF2 crystal as saturable absorber

Passive Q-switching of a diode-pumped Yb:LYSO laser at 1060 nm with a Yb3+ ions-doped CaF2 crystal without the excited-state absorption (ESA) was demonstrated. An average output power of 174 mW with pulse duration of 5.6 mu s and repetition rate of 27 kHz have been obtained under the unoptimized conditions. And the Q-switching conversion efficiency was as high as 51.7%. (c) 2007 Optical Society of America.

High power, low-jitter encoded picosecond pulse generation using an rf-locked self-q-switched multicontact GaAs/GaAlAs diode laser

The RF locking of a self-Q-switching diode laser is shown to reduce the jitter of a 2.48 GHz train of 1 W peak power picosecond pulses to less than 300 fs. By using direct modulation of the loss in the Q-switched laser, direct encoding of data has been achieved at rates in excess of 2 Gbit/s.

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO4 laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In0.25Ga0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 mu m thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm, thick laser crystal and a 1 mm thick laser crystal, respectively. (C) 2007 Elsevier GmbH. All rights reserved.

Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature

Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of Q- switched and mode- locked ( QML) 1064 nm operation was achieved in a very simple compact plane- concave cavity Nd: YVO4 laser, it was so short that the pulses can be used as Q- switching pulses. The maximal average output power is 808 mW with the repetition rate of 25 kHz, and the corresponding peak power and energy of a single Q- switched pulse was 2.94 kW and 32.3 mu J, respectively. The mode- locked pulse trains inside the Q- switched pulse envelope had a repetition rate of 800 MHz.

Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber

Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 degrees C by metal organic vapor phase epitaxy on a semi-insular GaAs substrate. With such an absorber as well as an output coupler we obtain Q-switched mode-locked (QML) 1064 nm Nd:GdVO4 laser pumped by diode laser with high repetition rate, formed with a simple flat-flat cavity. The repetition rate of the Q-switched envelope increased from 100 to 660 kHz as the pump power increased from 2.28 to 7.29 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of similar to 1.36 GHz. A maximum average output power of 953 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally. (C) 2005 Elsevier B.V. All rights reserved.

Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 mu J, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz. (C) 2005 Elsevier B.V. All rights reserved.

Q-switched and mode-locked diode-pumped Nd : YAG laser with an LT-GaAs

Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained. (c) 2005 Elsevier GmbH. All rights reserved.

Q-switched Raman fiber laser with molybdenum disulfide-based passive saturable absorber

We demonstrate a Q-switched Raman fiber laser using molybdenum disulfide (MoS2) as a saturable absorber (SA). The SA is assembled by depositing a mechanically exfoliated MoS2 onto a fiber ferrule facet before it is matched with another clean ferrule via a connector. It is inserted in a Raman fiber laser cavity with a total cavity length of about 8km to generate a Q-switching pulse train operating at 1560.2 nm. A 7.7-km-long dispersion compensating fiber with 584 ps·nm?1km?1 of dispersion is used as a nonlinear gain medium. As the pump power is increased from 395mW to 422mW, the repetition rate of the Q-switching pulses can be increased from 132.7 to 137.4 kHz while the pulse width is concurrently decreased from 3.35μs to 3.03 μs. The maximum pulse energy of 54.3 nJ is obtained at the maximum pump power of 422mW. These results show that the mechanically exfoliated MoS2 SA has a great potential to be used for pulse generation in Raman fiber laser systems.

高功率光子晶体光纤激光器研究进展

光子晶体光纤的出现，为高功率光纤激光器的关键技术-大模区光纤的实现提供了新途径。基于铒镱共掺磷酸盐材料的包层掺杂新结构出现，为实现更加紧凑的光纤激光器提供了可能。常规高功率光纤激光器中的抽运技术，谐振腔技术和相干组束技术也在不断融入高功率光子晶体光纤激光器。高功率光子晶体光纤激光器的调Q和锁模输出也已经实现。

梯度补偿法控温晶体的高功率绿光激光器

研究了平均功率超过30 W的稳定高效全固态绿光激光器,分析得出影响全固态腔内倍频激光器倍频效率和输出稳定性的主要因素是倍频晶体局部温升造成的相位失配和热透镜效应,采用温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,降低激光器工作中倍频晶体内外温度梯度从而有效地克服因晶体局部温升造成的倍频相位匹配角失配和热透镜效应。采用三条60 W的半导体激光二极管阵列板条侧面抽运Nd:YAG激光增益介质棒,采用声光调Q,平凹直腔和腔内倍频结构配合温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,得到了稳定高效的532 nm

高重复率窄脉宽Nd∶YVO_4板条激光器

部分端面抽运的混合腔板条激光器是一种新型的全固态激光器,采用这种结构,实现了高重复率调Q运转。在脉冲抽运情况下,1kHz运转时,得到脉宽4.6ns,单脉冲能量4.5mJ的激光输出。在连续抽运调Q输出情况下,5kHz高重复率运转时,获得了脉宽6ns,单脉冲能量3.1mJ的脉冲序列输出,平均功率超过15W;当重复率高达25kHz时,得到脉宽9.5ns,单脉冲能量1.2mJ的激光输出,平均功率达30W。实验结果表明,输出水平还有很大的提升空间。

考虑激光下能级弛豫过程的调QNd：YAG速率方程理论分析

本文比较了考虑与不考虑激光下能级弛豫过程的两种形式的调Q速率方程，并以二极管激光侧面泵浦电光调QNd：YAG为例，分别采用两种形式的调Q速率方程，分析了调Q过程中上、下能级粒子数变化过程，计算了输出调Q激光脉冲波形、峰值功率以及能量，进行了比较分析，并解释了调Q“子脉冲”与拖尾现象。

A compact diode-pumped injection seeded Nd : YAG laser with resonance-detection technique

A diode pumped injection seeded single-longitudinal-mode (SLM) Nd:YAG laser is achieved by using the resonance-detection technique in Q-switching operation. The pulsed oscillator laser uses a folded cavity to achieve compact construction. This system operates at 100 Hz and provides over 20 mJ/pulse of single-frequency 1064 nm output. The M-2 values of horizontal and vertical axes are 1.58 and 1.41, respectively. The probability of putting out single-longitudinal-mode pulses is 100%. The 355 nm laser output produced by frequency tripling has a linewidth less than 200 MHz. The laser can run over eight hours continually without mode hopping.

镱、钠共掺的氟化钙晶体在1050nm的可饱和吸收作用

通过在稳定连续波运转的Yb:YAG激光器中插入不同掺杂浓度的新型钠、镱共掺的氟化钙晶体的对比性实验,证明了镱、钠共掺的氟化钙晶体在1050nm具有明显的可饱和吸收作用,从而解释了该晶体作为增益介质在该波段总是趋于自调Q运转的原因.Yb3+离子是该晶体可饱和吸收作用的主要因素,但是共掺入适当的Na离子可以明显改善晶体的调Q效果.优化共掺镱、钠离子的浓度和比例后的氟化钙晶体能够作为1050nm波段激光器的被动Q开关.