Espectro de polariton de plasmons e propriedades ópitcas de super-redes tipo cantor

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Espectro de Polariton de Plasmons e Ondas de Luz em Quasi-Cristais

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Field profiles of bulk plasmon polariton modes in layered systems containing a metamaterial

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Unfolding of plasmon-polariton modes in one-dimensional layered systems containing anisotropic left-handed materials

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Bulk plasmon polariton-gap soliton-induced transparency in one-dimensional Kerr-metamaterial superlattices

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Coherent phase contrast imaging of THz phonon-polariton tunneling

We report on coherent spatiotemporal imaging of single-cycle THz waves in frustrated total internal reflection geometry. Our technique yields images of the spatiotemporal electric field distribution before and after tunneling through an air gap in between two LiNbO3 crystals. Measurements of the reflected and the transmitted THz waveforms for different tunnel distances allow for a direct comparison with results from a causal linear dispersion theory and excellent agreement is found.

Solitons in Exciton-Polariton System: Reduced Modelling, Analysis, and Numerical Studies

In this dissertation, we study the behavior of exciton-polariton quasiparticles in semiconductor microcavities, under the sourceless and lossless conditions.

First, we simplify the original model by removing the photon dispersion term, thus effectively turn the PDEs system to an ODEs system,

and investigate the behavior of the resulting system, including the equilibrium points and the wave functions of the excitons and the photons.

Second, we add the dispersion term for the excitons to the original model and prove that the band of the discontinuous solitons now become dark solitons.

Third, we employ the Strang-splitting method to our sytem of PDEs and prove the first-order and second-order error bounds in the $H^1$ norm and the $L_2$ norm, respectively.

Using this numerical result, we analyze the stability of the steady state bright soliton solution. This solution revolves around the $x$-axis as time progresses

and the perturbed soliton also rotates around the $x$-axis and tracks closely in terms of amplitude but lags behind the exact one. Our numerical result shows orbital

stability but no $L_2$ stability.

Heating mechanism of self-interaction of surface polaritons at n-type semiconductor-metal interface

The influence of electron heating in the high-frequency surface polariton (SP) field on the dispersion properties of the SPs considered is investigated. High frequency SPs propagate at the interface between an n-type semiconductor with finite electron pressure, and a metal. The nonlinear dispersion relation for the SPs is derived and investigated.

The effect of the nonparabolicity of the free carriers dispersion law on the propagation of surface polaritons in a semiconductor-metal structure

The results of a study on the influence of the nonparabolicity of the free carriers dispersion law on the propagation of surface polaritons (SPs) located near the interface between an n-type semiconductor and a metal arc reported. The semiconductor plasma is assumed to be warm and nonisothermal. The nonparabolicity of the electron dispersion law has two effects. The first one is associated with nonlinear self-interaction of the SPs. The nonlinear dispersion equation and the nonlinear Schrodinger equation for the amplitude of the SP envelope are obtained. The nonlinear evolution of the SP is studied on the base of the above mentioned equations. The second effect results in third harmonics generation. Analysis shows that these third harmonics may appear as a pure surface polariton, a pseudosurface polariton, or a superposition of a volume wave and a SP depending on the wave frequency, electron density and lattice dielectric constant.

Electromagnetic wave propagation at the interface between two polar semiconductors

The interface between two polar semiconductors can support three types of phonon-plasmon-polariton modes propagating in three well-defined frequency windows ??1?[min(?1,?3),?R1], ??2?[max(?2,?4),?R2], and ??3?[min(?2,?4),?R3]. The limiting frequencies ?1,2,3,4 are defined by ?1(?)=0, ?2(?)=0, and ?R1,2,3 by ?1(?)+?2(?)=0, where ?i(?) are dielectric functions of the two media with i=1,2. The dispersion, decay distances, and polarization of the three modes are discussed. The variation of the limiting frequencies with the interface plasma parameter ???p22/?p12 reveals an interesting feature in the dispersion characteristics of these modes. For the interfaces for which the bulk coupled phonon-plasmon frequencies of medium 1 are greater than the LO frequency or are less than the TO frequency of medium 2, there exist two values of ?=?1 and ?2(

Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons

Transmission of electromagnetic wave in a heavily doped n-type GaAs film is studied theoretically. From the calculations, an extraordinary transmission of p-polarized waves through the film with subwavelength grooves on both surfaces at mid-infrared frequencies is found. This extraordinary transmission is attributed to the coupling of the surface-plasmon polariton modes and waveguide modes. By selecting a set of groove parameters, the transmission is optimized to a maximum. Furthermore, the transmission can be tuned by dopant concentrations. As the dopant concentration increases, the peak position shifts to higher frequency but the peak value decreases.

Finite element beam propagation method for analysis of plasmonic waveguide

The basic idea of the finite element beam propagation method (FE-BPM) is described. It is applied to calculate the fundamental mode of a channel plasmonic polariton (CPP) waveguide to confirm its validity. Both the field distribution and the effective index of the, fundamental mode are given by the method. The convergence speed shows the advantage and stability of this method. Then a plasmonic waveguide with a dielectric strip deposited on a metal substrate is investigated, and the group velocity is negative for the fundamental mode of this kind of waveguide. The numerical result shows that the power flow direction is reverse to that of phase velocity.

Mid-infrared heavily n-doped GaAs extraordinary transmission through subwavelength grooves

Transmission of an electromagnetic wave from a heavily doped n-type GaAs film is studied theoretically. The calculations are performed using the two-dimensional finite-different time-domain method. From the calculations, we find the extraordinary transmission of p-polarized waves through the film with subwavelength grooves on both surfaces at mid-infrared frequencies. By determining a set of groove parameters, we optimize the transmission to as high as 55.2%. We ascribe this extraordinary transmission to the coupling of the surface-plasmon polariton modes and waveguide modes. Such an enhanced transmission device can be useful for mid-infrared wave filters, emitters, and monitors.

Coupling between cavity mode and heavy-hole exciton and light-hole exciton in semiconductor microcavity

The reflectivity spectra at different incident angles of semiconductor microcavity having heavy-hole exciton and light-hole exciton are calculated ly transfer matrix method using the linear dispersion model. Meanwhile we calculate the energy of three cavity polaritons at different incident angles formed by the coupling between cavity mode and the two exciton modes using the three harmonic oscillators coupling model, and the weights of cavity mode and the two exciton modes in the three cavity polaritons. The results indicate that there is obvious anticross between the high energy cavity polariton and the two low energy cavity polaritons with increasing incident angles, and the weights of three modes(cavity mode, heavy-hole exciton mode and light-hole exciton mode) in the three cavity polaritons increase or decrease.

Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure

By means of hydrostatic pressure tuning, we have observed the strong-coupling exciton-polariton mode in a planar microcavity with an InGaAs/GaAs quantum well embedded in it, over a pressure range from 0.37 to 0.41 GPa. The experimental data can be fitted very well to a corresponding theoretical formula with a unique value of the vacuum Rabi splitting equal to 6.0 meV. A comparison between pressure tuning and other tuning methods is made as regards to what extent the intrinsic features of the exciton and cavity will be influenced during the tuning procedure.