A Raman and dielectric study of a diffuse phase transition in (Pb1-xCax)TiO3 thin films

Dielectric and Raman scattering experiments were performed on polycrystalline Pb1-xCaxTiO3 thin films (x=0.10, 0.20, 0.30, and 0.40) as a function of temperature. The results showed no shift in the dielectric constant (K) maxima, a broadening with frequency, and a linear dependence of the transition temperature on increasing Ca2+ content. on the other hand, a diffuse-type phase transition was observed upon transforming from the cubic paraelectric to the tetragonal ferroelectric phase in all thin films. The temperature dependence of Raman scattering spectra was investigated through the ferroelectric phase transition. The temperature dependence of the phonon frequencies was used to characterize the phase transitions. Raman modes persisted above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of a breakdown of the local cubic symmetry due to chemical disorder. The lack of a well-defined transition temperature and the presence of broad bands in some temperature interval above the FE-PE phase transition temperature suggested a diffuse-type phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in these thin films.

Electronic structure of Pb1-xLaxTiO3 ferroelectric materials from Ti 2p and O 1s soft x-ray absorption spectroscopy

The electronic structure of Pb1-xLaxTiO3 (PLT) compounds for x ranging from 0 to 30 at. % of La is investigated by means of soft x-ray absorption near edge structure (XANES) at the Ti L-3,L-2 and O K edges. The greatest modification in the structure of the Ti 2p XANES spectra of the PLT compounds is observed in the region of the high energy peak of the L-3 edge (e(g) states), which exhibits a splitting in the undoped sample. As the amount of lanthanum increases, this splitting becomes less pronounced. This modification is interpreted as a decrease in the degree of disorder of titanium atoms, which is correlated to the substitution of Pb by La atoms. The structural changes observed at the low energy peaks of the O K-edge XANES spectra of the PLT compounds may be interpreted in terms of hybridization between O 2p, Ti 3d, and Pb 6p orbitals. A decrease in the degree of hybridization observed as Pb atoms are replaced by La atoms may be related to the differences in the ferroelectric properties observed between x=0.0 and x=0.30 compounds. (c) 2006 American Institute of Physics.

Structural and ferroelectric properties of Pb1-xSrxTiO3 thin films

Strontium-modified lead titanate (PST) thin films with composition Pb1-xSrxTiO3 (0.10 < x &LE; 0.60) were grown on Pt/Ti/SiO2/Si substrates using a soft chemical process. The crystallization of the PST thin films was achieved by heat treatment at 600&DEG;C. The structural and microstructural modifications in the films were studied using X-ray diffraction (XRD) and atomic force microscopy, respectively. The XRD study shows that the lattice parameters of polycrystalline PST thin films calculated from X-ray data indicate a decrease in lattice tetragonality with the increase in strontium content in these films. This indicates a gradual change from tetragonal to cubic structure. By atomic force microscopy analysis, the average grain size of the thin films was systematically reduced with the increase in Sr content. The dielectric property of the thin films was found to be strongly dependent on the Sr concentration. With 60 at.% Sr content, a ferroelectric to paraelectric phase transition was observed at room temperature.

Very large dielectric constant of highly oriented Pb1-xBaxTiO3 thin films prepared by chemical deposition

Highly (100) oriented Pb0.8Ba0.2TiO3/LaNiO3 structures were grown on LaAlO3(100) substrates by using a wet, soft chemical method and crystallized by the microwave oven technique. The Au/PBT/LaNiO3/LaAlO3 capacitor shows a hysteresis loop with remnant polarization, P-r, of 15 muC/cm(2), and coercive field, E-c, of 47 kV/cm at an applied voltage of 3 V, along with a dielectric constant over 1800. Atomic force microscopy showed that Pb0.8Ba0.2TiO3 is composed of large grains about 300 nm. The experimental results demonstrated that the microwave preparation is rapid, clean, and energy efficient. Therefore, we demonstrated that the combination of the soft chemical method with the microwave process is a promising technique to grow highly oriented thin films with excellent dielectric and ferroelectric properties, which can be used in various integrated device applications. (C) 2004 American Institute of Physics.

Structural and morphological characterization of Pb1-xBaxTiO3 thin films prepared by chemical route: An investigation of phase transition

Detailed room temperature micro-Raman scattering, X-ray diffraction, atomic force microscopy and specular reflectance infrared Fourier transform spectroscopy studies were carried out on soft chemical by processed Pb1-xBaxTiO3 thin films. The micro-Raman spectra pointed the existence of a stable tetragonal ferroelectric phase in the entire composition range (0 < x <= 1). The infrared reflectance spectra showed that the frequency of several peaks decreases as the Ba2+ concentration increases. These features are correlated to a decrease in the tetragonal distortion of the TiO6 octahedra as the Ba2+ concentration increases. Furthermore, as x increases from 0.70 to 1.0, the Raman spectrum shows an evolution towards the well-known Raman spectrum of the tetragonal BaTiO3. Therefore, we demonstrated that the combination of solid solution PbTiO3-BaTiO3 with a grain size in the order of 30-40 nm supports the tetragonal ferroelectric phase at room temperature. (C) 2007 Elsevier B.V. All rights reserved.

Nanometric Pb1-xLaxTiO3 (x=0, 0.13 and 0.27) powders obtained by the polymeric precursor method

PLT (Pb1-xLaxTiO3, in which x = 0, 0.13 and 0.27) powders were successfully synthesized using the polymeric precursor method, based on the Pechini method. The polymeric precursors were calcined at temperatures ranging from 350 to 500 degrees C for 4 h. X-ray diffraction (XRD) showed the evolution of the crystalline phase starting from the amorphous precursor. Thermogravimetric analyses (TG) and differential thermal analyses (DTA) of the powder precursors showed the influence of the pH on the elimination of organic material. PLT powders have a tendency to form agglomerates, what can be verified by comparing the values of the average particle sizes obtained by Brunauer-Emmett-Teller method, BET (D-BET) with the values of the average crystallite sizes obtained by XRD (D-XRD). (C) 2007 Elsevier Ltd. All fights reserved.

Reply to Comment on 'Pb1-xCaxTiO3 solid solution (x=0.0, 0.25, 0.50, and 0.75): A theoretical and experimental approach'

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Dielectric and structural characterization of Pb1-xAxZr0.40Ti0.60O3 (A = Sr, Ca) ferroelectric ceramics

This paper reports the influence of Sr- and Ca-substitution on the structural and ferroelectric properties of Pb1-xSrxZr0.40Ti0.60O3 (PSZT) and Pb1-xCaxZr0.40Ti0.60O3 (PCZT) ceramic systems. The dielectric measurements show that these substitutions cause a diffuse behavior in the dielectric permittivity curves for all samples. According to the X-ray absorption near-edge structure (XANES) spectra collected at Ti K- and LIII-edge, when Pb was replaced by Sr or Ca, a decrease in the local distortion around Ti atoms in the TiO6 octahedron could be observed. The O K-edge XANES spectra also revealed that the hybridization between O 2p and Pb 6sp states decreased as the amount of Sr or Ca atoms increased. Based on these results, it was possible to ascertain that the ferroelectric behavior in PSZT and PCZT samples bears a close correlation to the hybridization weakening between O 2p and Pb 6 sp states. © 2013 by American Scientific Publishers.

Local order of Pb1-xLaxZr0.40Ti 0.60O3 ferroelectric ceramic materials probed by X-ray absorption and Raman spectroscopies

This paper reports on the structural characterization of Pb 1-xLaxZr0.40Ti0.60O3 (PLZT) ferroelectric ceramic compositions prepared by the conventional solid state reaction method. X-ray absorption spectroscopy (XAS) and Raman spectroscopy were used to probe the local structure of PLZT samples that exhibits a normal and relaxor ferroelectric behavior. From the Zr K-edge and Pb LIII-edge EXAFS spectra, a considerable dissymmetry of Zr and Pb sites was observed in all samples, including those showing a long-range order cubic symmetry and a relaxor behavior. The Raman spectroscopy results confirmed the existence of a local disorder in all PLZT samples through the observation of Raman active vibrational modes. The variation in the intensity of the E(TO 3) mode in the PLZT relaxor samples indicates that the process of correlation between nanodomains stabilizes at temperatures lower than T m. © 2013 Elsevier B.V. All rights reserved.

Effect of Fe-doping on the structural, microstructural, optical, and ferroeletric properties of Pb1/2Sr1/2Ti1-xFexO3 oxide prepared by spin coating technique

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Preparação e caracterização de filmes finos ferroelétricos nanoestruturados do tipo Pb1-x(Ca,Ba)xTiO3

O rápido crescimento do mercado de dispositivos eletrônicos portáteis, com aplicações em diferentes áreas (telecomunicações, medicina, engenharia), criou uma grande demanda por fontes de potência compactas leves e, sobretudo, de baixo custo. Essa demanda levou ao desenvolvimento de tecnologia de filmes finos nanoestruturados para a obtenção de componentes eletroeletrônicos, por exemplo, memórias de computador. Estes dispositivos são empregados em “notebooks”, circuitos integrados, telefones celulares. O estudo de cristalização de filmes finos ferroelétricos nanoestruturados será feito através da cristalização induzida por rotas convencionais tal como cristalização em forno mufla. A modulação entre os diferentes cátions (Pb, Ca e Ba) para formar o sistema Pb1-x(Ca,Ba)xTiO3 serão analisadas, visando obter filmes com propriedades compatíveis para uso em memórias ferroelétricas. Para isso, os filmes finos serão depositados em substratos adequados controlando-se a homogeneidade química, a microestrutura e a interação filme-substrato

Titanium K-edge XAS study on local structure of Pb1-xCaxTiO3 ferroelectric ceramics

In order to characterize the local structure of Pb1-xCaxTiO3 (PCT) samples, Ti K-edge XANES measurements were performed and showed that Ca incorporation to PbTiO3 structure leads to a decreasing of local distortion of Ti atoms in relation to oxygen atoms at the TiO6 octahedra. Moreover, according to EXAFS measurements, the local structure around Ti atoms exhibits tetragonal symmetry with P4mm space group for samples with x <= 0.475, whereas orthorhombic symmetry with Pbnm space group was observed for x equals to 0.50 and 0.55.

X-ray photoelectron spectroscopy study on sintered Pb1-xLaxTiO3 ferroelectric ceramics

The Pb1-xLaxTiO3 sintered ferroelectric ceramics with x equal to 0, 0.10, 0.15, 0.20, and 0.30 were studied by X-ray photoelectron spectroscopy (XPS). The binding energy of the Ti 2p lines is consistent with only one chemical state, Ti4+. on the other hand, in the case of Pb 4f and 0 Is XPS spectra, apart from the main peaks attributed to the lattice ions, minor peaks related to the surface states were also observed. The presence of Pb-0 state on the surface of all samples was due to the reduction of lead ions caused by the preferential removal of the oxygen ions after sputtering. The non observation of Ti3+ ions confirms that the mechanism of charge compensation that should occurs owing to the substitution of Ph2+ by La3+ is due to the preferential formation of Pb site vacancies, and not to a reduction from Ti4+ to Ti3+ states. Within the limits of the present experiment, there is no evidence of the existence of non-equivalent Pb, Ti, and La sites as the Pb1-xLaxTiO3 ceramic changes from a normal to a relaxor ferroelectric state. (c) 2006 Elsevier B.V. All rights reserved.

Influence of Ba-substitution on the structural and ferroelectric properties of Pb1-xBaxZr0.40Ti0.60O3 ceramic materials

This work presents a comprehensive study about the influence of Ba-substitution on the structural and ferroelectric properties of Pb1-xBaxZr0.40Ti0.60O3 (PBZT) ceramic system. Pb1-xBaxZr0.40Ti0.60O3 ceramic samples were then prepared by solid state reaction method and characterized as a function of composition and temperature by X-ray diffraction (XRD) and impedance spectroscopy techniques. The dielectric measurements show that the substitution of Pb2+ for Ba2+ ions leads to a diffuse behavior of the dielectric permittivity curves for all samples and that only the x = 0.50 sample presents a typical relaxor behavior. In good agreement with dielectric measurements, the structural phase transition study showed a phase transition from a tetragonal structure with P4mm space group to a cubic structure with Pm-3m space group for all samples, except for the x = 0.50 sample were a cubic structure was observed in the complete temperature interval measured.

Conduction mechanisms in p-type Pb1-xEuxTe alloys in the insulator regime

Electrical resistivity measurements were performed on p-type Pb1-xEuxTe films with Eu content x = 4%, 5%, 6%, 8%, and 9%. The well-known metal-insulator transition that occurs around 5% at room temperature due to the introduction of Eu is observed, and we used the differential activation energy method to study the conduction mechanisms present in these samples. In the insulator regime (x>6%), we found that band conduction is the dominating conduction mechanism for high temperatures with carriers excitation between the valence band and the 4f levels originated from the Eu atoms. We also verified that mix conduction dominates the low temperatures region. Samples with x = 4% and 5% present a temperature dependent metal insulator transition and we found that this dependence can be related to the relation between the thermal energy k(B)T and the activation energy Delta epsilon(a). The physical description obtained through the activation energy analysis gives a new insight about the conduction mechanisms in insulating p-type Pb1-xEuxTe films and also shed some light over the influence of the 4f levels on the transport process in the insulator region. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729813]