Pulse-Shape Analysis of PDM-QPSK Modulation Formats for 100 and 200 Gb/s DWDM transmissions

Advanced optical modulation format polarization-division multiplexed quadrature phase shift keying (PDM-QPSK) has become a key ingredient in the design of 100 and 200-Gb/s dense wavelength-division multiplexed (DWDM) networks. The performance of this format varies according to the shape of the pulses employed by the optical carrier: non-return to zero (NRZ), return to zero (RZ) or carrier-suppressed return to zero (CSRZ). In this paper we analyze the tolerance of PDM-QPSK to linear and nonlinear optical impairments: amplified spontaneous emission (ASE) noise, crosstalk, distortion by optical filtering, chromatic dispersion (CD), polarization mode dispersion (PMD) and fiber Kerr nonlinearities. RZ formats with a low duty cycle value reduce pulse-to-pulse interaction obtaining a higher tolerance to CD, PMD and intrachannel nonlinearities.

Simultaneous multiple channel all-optical NRZ to CSRZ and RZ to CSRZ format conversion using an SOA-NOLM

The optical conversion bandwidth for an all-optical modulation format converter, based on a semiconductor laser amplifier in a nonlinear optical loop mirror (SOA-NOLM), is investigated. 4 Â 10 Gbit/s channels are all- optically converted between both non-return-to-zero (NRZ) and return-to-zero (RZ) format to carrier- suppressed return-to-zero (CSRZ). WDM transmission of the converted signals over a 194 km fibre span is then demonstrated. The receiver sensitivity for the converted four wavelengths is measured and compared after transmission.

Simultaneous multiple channel all-optical NRZ to CSRZ and RZ to CSRZ format conversion using an SOA-NOLM

The optical conversion bandwidth for an all-optical modulation format converter, based on a semiconductor laser amplifier in a nonlinear optical loop mirror (SOA-NOLM), is investigated. 4 Â 10 Gbit/s channels are all- optically converted between both non-return-to-zero (NRZ) and return-to-zero (RZ) format to carrier- suppressed return-to-zero (CSRZ). WDM transmission of the converted signals over a 194 km fibre span is then demonstrated. The receiver sensitivity for the converted four wavelengths is measured and compared after transmission.

Simultaneous multiple channel all-optical NRZ to CSRZ and RZ to CSRZ format conversion using an SOA-NOLM

The optical conversion bandwidth for an all-optical modulation format converter, based on a semiconductor laser amplifier in a nonlinear optical loop mirror (SOA-NOLM), is investigated. 4×10 Gbit/s channels are all-optically converted between both non-return-to-zero (NRZ) and return-to-zero (RZ) format to carrier-suppressed return-to-zero (CSRZ). WDM transmission of the converted signals over a 194 km fibre span is then demonstrated. The receiver sensitivity for the converted four wavelengths is measured and compared after transmission. © 2014 Elsevier B.V. All rights reserved.

High performance electrochromic devices based on anodized nanoporous Nb2O5

Despite the predictions, the true potential of Nb2O5 for electrochromic applications has yet to be fully realized. In this work, three-dimensional (3D) compact and well-ordered nanoporous Nb2O5 films are synthesized by the electrochemical anodization of niobium thin films. These films are formed using RF sputtering and then anodized in an electrolyte containing ethylene glycol, ammonium fluoride, and small water content (4%) at 50 °C which resulted in low embedded impurities within the structure. Characterization of the anodized films shows that a highly crystalline orthorhombic phase of Nb2O5 is obtained after annealing at 450 °C. The 3D structure provides a template consisting of a large concentration of active sites for ion intercalation, while also ensuring low scattering directional paths for electrons. These features enhance the coloration efficiency to 47.0 cm2 C?1 (at 550 nm) for a 500 nm thick film upon Li+ ion intercalation. Additionally, the Nb2O5 electrochromic device shows a high bleached state transparency and large optical modulation.

Assembly and inspection of liquid crystal on silicon devices

Liquid crystal on silicon (LCOS) is one of the most exciting technologies, combining the optical modulation characteristics of liquid crystals with the power and compactness of a silicon backplane. The objective of our work is to improve cell assembly and inspection methods by introducing new equipment for automated assembly and by using an optical inspection microscope. A Suss-Micro'Tec Universal device bonder is used for precision assembly and device packaging and an Olympus BX51 high resolution microscope is employed for device inspection. ©2009 Optical Society of America.

基于统计光学的无透镜鬼成像数值模拟与实验验证

作为量子信息领域分支的鬼成像,由于物体的像将出现在不包含物体的光路上的特点,使得这一领域的研究引人入胜。一度认为,只有基于纠缠态双光子的纠缠光源,才能实现鬼成像;但近年来的研究表明,经典热光场也能实现这一过程。从经典统计光学入手,建立了热光场的数值模型,模拟符合热光特性的光场变化、光场传播、以及物体透射函数对热光场的调制,进而从光强度起伏的关联函数中,分别重现振幅型物体和纯相位型物体的傅里叶变换图像;通过与真实实验结果的对比,表明基于统计光学原理的该数值模型所预测的实验结果,与真实的实验结果完全一致。

基于高频微波技术的分布式光纤传感器布里渊散射信号检测

分析了布里渊分布式光纤传感技术原理,采用自行研制的光纤单纵模分布反馈(DFB)激光器结合电光调制技术,利用相干检测技术,对布里渊微弱后向散射信号进行检测。通过改进滤波放大技术,对微弱后向散射光信号进行有效放大,再用扰偏技术及信号采样平均处理,实现对光纤传感器后向布里渊散射信号在11 GHz高频段直接采集显示。结果表明,探测所得布里渊散射信号峰值功率可达50 mV,能有效降低解调系统信号检测难度,改善了系统信噪比(SNR)。初步实验结果证明了该方案的可行性。

Assembly and inspection of liquid crystal on silicon devices

Liquid crystal on silicon (LCOS) is one of the most exciting technologies, combining the optical modulation characteristics of liquid crystals with the power and compactness of a silicon backplane. The objective of our work is to improve cell assembly and inspection methods by introducing new equipment for automated assembly and by using an optical inspection microscope. A Suss-MicroTec Universal device bonder is used for precision assembly and device packaging and an Olympus BX51 high resolution microscope is employed for device inspection. © 2009 Optical Society of America.

Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.

Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions

We present the design and numerical simulation results for a silicon waveguide modulator based on carrier depletion in a linear array of periodically interleaved PN junctions that are oriented perpendicular to the light propagation direction. In this geometry the overlap of the optical waveguide mode with the depletion region is much larger than in designs using a single PN junction aligned parallel to the waveguide propagation direction. Simulations predict that an optimized modulator will have a high modulation efficiency of 0.56 V.cm for a 3V bias, with a 3 dB frequency bandwidth of over 40 GHz. This device has a length of 1.86 mm with a maximum intrinsic loss of 4.3 dB at 0V bias, due to free carrier absorption. (C) 2009 Optical Society of America

Extraction of intrinsic response from S-parameters of laser diodes

We describe a new method for extracting the intrinsic response of a laser diode from S-parameters measured using a calibrated vector network analyzer. The experimental results obtained using the new method are compared with those obtained using the optical modulation method and the frequency response subtraction method. Good agreement has been obtained, confirming the new method validity and accuracy. The new method has the advantages of obtaining the intrinsic characteristics of a laser diode with conventional measurements using a network analyzer.

Characterization of parasitics in TO-packaged high-speed laser modules

An elaborate analysis of the parasitic network of high-speed through-hole packaging (TO)-type laser modules is presented using a small-signal equivalent circuit model. The intrinsic laser diode is obtained using the optical modulation technique, and is embedded into the model as a separate component. Three step-by-step measurements are made for determining the packaging parasitic network, including the test fixture, TO header, submount, bonding wire, and parasitics of the laser chip. A good agreement between simulated and measured results confirms the validation and accuracy of the characterization procedures. Furthermore, several key parasitic elements are found based on the simulation of the high-frequency responses of the packaged devices. It is expected that the 3-dB bandwidth of 12 GHz or more of the low-cost TO packaged laser module may be achieved using the proposed optimization method.

GAAS/GAALAS GRADED INDEX SEPARATE CONFINEMENT SINGLE QUANTUM-WELL SINGLE-MODE WAVE-GUIDE ELECTROABSORPTION LIGHT-MODULATOR

A GaAs/GaAlAs graded-index separate confinement single quantum well heterostructure single-mode ridge waveguide electroabsorption modulator was fabricated and investigated. For the modulator with a quantum well width of 100 angstrom and device length of 700-mu-m, an on/off ratio of 29.7 dB and estimated absorption insertion loss of 3 dB were obtained for TE polarised light with wavelength 8650 angstrom, and for TM polarisation the on/off ratio was 28.5 dB. With a switching voltage of 1 V, an on/off ratio of 15 dB was achieved. Photocurrent spectra exhibited a red shift of 600 angstrom of the absorption edge when the voltage applied to the PIN diode was varied from 0.5 to -7 V. The corresponding shift of the room temperature exciton peak energy was 96 meV.

Metal Oxide Nanoparticle Mediated Enhanced Raman Scattering and Its Use in Direct Monitoring of Interfacial Chemical Reactions

Metal oxide nanoparticles (MONPs) have widespread usage across many disciplines, but monitoring molecular processes at their surfaces in situ has not been possible. Here we demonstrate that MONPs give highly enhanced (X10(4)) Raman scattering signals from molecules at the interface permitting direct monitoring of their reactions, when placed on top of flat metallic surfaces. Experiments with different metal oxide materials and molecules indicate that the enhancement is generic and operates at the single nanoparticle level. Simulations confirm that the amplification is principally electromagnetic and is a result of optical modulation of the underlying plasmonic metallic surface by MONPs, which act as scattering antennae and couple light into the confined region sandwiched by the underlying surface. Because of additional functionalities of metal oxides as magnetic, photoelectrochemical and catalytic materials, enhanced Raman scattering mediated by MONPs opens up significant opportunities in fundamental science, allowing direct tracking and understanding of application-specific transformations at such interfaces. We show a first example by monitoring the MONP-assisted photocatalytic decomposition reaction of an organic dye by individual nanoparticles.