983 resultados para Net optical gain


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The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc-blende GaN/Ga0.85Al0.15N strained quantum well (100 Angstrom well width) have been investigated using a 6 X 6 Hamiltonian model including the heavy hole, Light hole, and spin-orbit split-off bands. At the k = 0 point, it is found that the light hole strongly couples with the spin-orbit split-off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin-orbit split-off hole. Optical transitions between the valence subbands and the conduction subbands obey the Delta n=0 selection rule. At the k not equal 0 points, there is strong band mixing among the heavy hole, light hole, and spin-orbit split-off hole. The optical transitions do not obey the Delta n=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode optical gain, and strongly depresses the TM mode optical gain. Even when the carrier density is as large as 10(19) cm(-3), there is no positive TM mode optical gain. The TE mode optical gain spectrum has a peak at around 3.26 eV. The transparency carrier density is 6.5 X 10(18) cm(-3), which is larger than that of GaAs quantum well. The compressive strain overall reduces the transparency carrier density. The J(rad) is 0.53 kA/cm(2) for the zero optical gain. The results obtained in this work will be useful in designing quantum well GaN laser diodes and detectors. (C) 1996 American Institute of Physics.

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Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained by a 6x6 Hamiltonian (including heavy hole, light hole and spin-orbit splitting band), optical gain and radiative current density are calculated for the strained quantum well laser structures. The compressive strain in the GaN well region strongly depresses the TM mode optical gain and enhances the TE mode optical gain.

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Stacking chirped pulse optical parametric amplification based on a home-built Yb(3+)-doped mode-locked fiber laser and an all-fiber pulse stacker has been demonstrated. Energic 11 mJ shaped pulses with pulse duration of 2.3 ns and a net total gain of higher than 1.1 x 10(7) at fluctuation less than 2% rms are achieved by optical parametric amplification pumped by a Q-switched Nd:YAG frequency-doubled laser, which provides a simple and efficient amplification scheme for temporally shaped pulses by stacking chirped pulse. (C) 2009 Elsevier B.V. All rights reserved.

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Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8 mu m reached 1260 and 8108. The input noise current calculated is 5.46 x 10(-16) A/H-z(1/2). For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174 mu w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3 mu w at the wavelength of 1.55 mu m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.

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In this thesis, optical gain measurement setup based on variable stripe length method is designed, implemented and improved. The setup is characterized using inorganic and organic samples. The optical gain of spiro-quaterphenyl is calculated and compared with measurements from the setup. Films with various thicknesses of spiro-quaterphenyl, methoxy-spiro-quaterphenyl and phenoxy-spiro-quaterphenyl are deposited by a vacuum vapor deposition technique forming asymmetric slab waveguides. The optical properties, laser emission threshold, optical gain and loss coefficient for these films are measured. Additionally, the photodegradation during pumping process is investigated.

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We report, for the first time to our knowledge, experimental results on pedestal waveguides produced with Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 thin films deposited by RF Sputtering for photonic applications. Thin films were deposited using Ar/O-2 plasma at 5 mTorr pressure and RF power of 40 W on substrates of silicon wafers. The definition of the pedestal waveguide structure was made using conventional optical lithography followed by plasma etching. Propagation losses around 2.0 dB/cm and 2.5 dB/cm were obtained at 633 and 1050 nm, respectively, for waveguides in the 20-100 mu m width range. Single-mode propagation was measured for waveguides width up to 10 mu m and 12 mu m, at 633 nm and 1050 nm, respectively; for larger waveguides widths multi-mode propagation was obtained. Internal gain of 5.6 dB at 1530 nm, under 980 nm excitation, was measured for 1.5 cm waveguide length (similar to 3.7 dB/cm). The present results show the possibility of using Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 pedestal waveguide for optical amplifiers. (C) 2014 Elsevier B.V. All rights reserved.

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A transparent (wide-area) wavelength-routed optical network may be constructed by using wavelength cross-connect switches connected together by fiber to form an arbitrary mesh structure. The network is accessed through electronic stations that are attached to some of these cross-connects. These wavelength cross-connect switches have the property that they may configure themselves into unspecified states. Each input port of a switch is always connected to some output port of the switch whether or not such a connection is required for the purpose of information transfer. Due to the presence of these unspecified states, there exists the possibility of setting up unintended alloptical cycles in the network (viz., a loop with no terminating electronics in it). If such a cycle contains amplifiers [e.g., Erbium- Doped Fiber Amplifiers (EDFA’s)], there exists the possibility that the net loop gain is greater than the net loop loss. The amplified spontaneous emission (ASE) noise from amplifiers can build up in such a feedback loop to saturate the amplifiers and result in oscillations of the ASE noise in the loop. Such all-optical cycles as defined above (and hereafter referred to as “white” cycles) must be eliminated from an optical network in order for the network to perform any useful operation. Furthermore, for the realistic case in which the wavelength cross-connects result in signal crosstalk, there is a possibility of having closed cycles with oscillating crosstalk signals. We examine algorithms that set up new transparent optical connections upon request while avoiding the creation of such cycles in the network. These algorithms attempt to find a route for a connection and then (in a post-processing fashion) configure switches such that white cycles that might get created would automatically get eliminated. In addition, our call-set-up algorithms can avoid the possibility of crosstalk cycles.

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We present an analytical model for studying optical bistability in semiconductor lasers that exhibit a logarithmic dependence of the optical gain on carrier concentration. Model results are shown for a Fabry–Pérot quantum-well laser and compared with the predictions of a commercial computer-aided design (CAD) software tool.

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The process of offsetting land against unavoidable disturbance of development sites in Queensland will benefit from a method that allows the best possible selection to be made of alternative lands. With site selection now advocated through a combination of Regional Ecosystem and Land Capability classifications state-wide, a case study has determined methods of assessing the functional lift – that is, measures of net environmental gain – of such action. Outcomes with potentially high functional lift are determined, that offer promise not only for endangered ecosystems but also for managing adjacent conservation reserves.

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The influence of Lorentz and Doppler line-broadening mechanisms on the small-signal optical gain of lasers and, in particular, gasdynamic lasers, is discussed. A relationship between the critical parameter reflecting the line-broadening mechanisms and some of the important parameters arising out of the gain optimization studies in CO2-N2 gasdynamic lasers is established. Using this relationship, methods by which the deleterious effect of the Doppler mechanisms on small-signal gain can be suppressed are suggested. Journal of Applied Physics is copyrighted by The American Institute of Physics.

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Based on a method proposed by Reddy and Shanmugasundaram, similar solutions have been obtained for the steady inviscid quasi-one-dimensional nonreacting flow in the supersonic nozzle of CO2-N2-H2O and CO2-N2-He gasdynamic laser systems. Instead of using the correlations of a nonsimilar function NS for pure N2 gas, as is done in previous publications, the NS correlations are computed here for the actual gas mixtures used in the gasdynamic lasers. Optimum small-signal optical gain and the corresponding optimum values of the operating parameters like reservoir pressure and temperature and nozzle area ratio are computed using these correlations. The present results are compared with the previous results and the main differences are discussed. Journal of Applied Physics is copyrighted by The American Institute of Physics.

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Based on a method proposed by Reddy and Shanmugasundaram, similar solutions have been obtained for the steady inviscid quasi‐one‐dimensional nonreacting flow in the supersonic nozzle of CO2–N2–H2O and CO2–N2–He gasdynamic laser systems. Instead of using the correlations of a nonsimilar function NS for pure N2 gas, as is done in previous publications, the NS correlations are computed here for the actual gas mixtures used in the gasdynamic lasers. Optimum small‐signal optical gain and the corresponding optimum values of the operating parameters like reservoir pressure and temperature and nozzle area ratio are computed using these correlations. The present results are compared with the previous results and the main differences are discussed.

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This letter reports the ultrabroadband infrared luminescence from 1000- to 1700-nm wavelength range and demonstrate optical amplification at the second optical communication window in a novel bismuth-doped germanosilicate glass. The full-width at half-maximum of the luminescence is about 300 mn and the optical gain is larger than 1.37 within the wavelength region from 1272 to 1348 nm with pump power 0.97 W. This material could be useful to fabricate ultrabroadband optical fiber amplifiers.

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We demonstrate broadband optical amplification at 1.3 mu m in silicate glass-ceramics containing beta-Ga2O3:Ni2+ nanocrystals with 980 nm excitation for the first time. The optical gain efficiency is calculated to be about 0.283 cm(-1) when the excitation power is 1.12 W. The optical gain shows similar wavelength dependence to luminescence properties. (C) 2007 Optical Society of America.