Enhanced magnetoresistance in as?deposited oxygen?deficient La0.6Pb0.4MnO3-y thin films

The La0.6Pb0.4MnO3(LPMO) thin films were in situ deposited at different oxygen partial pressure and at a substrate temperature of 630 degrees C by pulsed laser deposition. The films grown at lower oxygen partial pressures showed an increase in lattice parameter and resistivity and a decrease in the insulator-metal transition temperature as compared to the stoichiometric LPMO thin film grown at 400 mTorr. Further, these oxygen-deficient thin films showed over 70% giant magnetoresistance (GMR) near the insulator-metal transition temperature against the 40% GMR in the case of stoichiometric thin films. (C) 1995 American Institute of Physics.

Room temperature giant magnetoresistance in La1-xPbxMnO3

Oxides of the La1-xPbxMnO3 system show giant magnetoresistance around 300 K. In La1-xPbxMnO3 the magnitude of the magnetoresistance (MR) at 320 K is 85% at 6 T and it is nearly temperature independent over a temperature range 40-320 K. All the compositions (0.1 less than or equal to x less than or equal to 0.5) show a peak in resistivity around 300-340 K and the magnitude of the MR also shows a peak around the same temperatures. This investigation suggests how to hole dope LaMnO3 in order to achieve maximum MR around 300 K so that these materials can have practical applications.

Giant magnetoresistance in bulk samples of LaMnO3 with varying Mn4+ content

Magnetoresistance (MR) in bulk samples of LaMnO3 has been investigated by varying the Mn4+ content from 10 to 33 per cent by chemical means, without aliovalent doping. With the increase in Mn4+ content, the structure of LaMnO3 changes first from orthorhombic to rhombohedral and then to cubic and the material becomes increasingly ferromagnetic, exhibiting a resistivity maximum akin to an insulator-metal transition at T-Peak, just below the ferromagnetic T-c. The magnitude of MR is highest in the cubic sample (with 33% Mn4+) around the T-Peak, and negligible in the non-magnetic orthorhombic sample (12% Mn4+).

Large magnetoresistance in La1-xSrxMnO3 and its dependence on magnetization

In this letter we report large magnetoresistance (MR) in ceramic samples of La1?xSrxMnO3 (0.1?x?0.4) in the temperature range 4.2 K?T?350 K in fields up to 6 T. We find that a large negative and isotopic MR exists for the whole composition range studied and the absolute value of resistivity change on application of magnetic field is more for samples with lower x which have higher resistivity. We find that the large MR occurs in the ferromagnetic state only and MR has a close relation with the magnetization M. © 1995 American Institute of Physics.

Low-temperature magnetoresistance of ?-phase FexNi80-xCr20 alloys near the critical composition for ferromagnetism

We present a comprehensive study of magnetoresistance (MR) of the crystalline pseudobinary ?-phase Fe alloy series FexNi80-xCr20 (50?x?66). This alloy series shows exotic magnetic phases as the composition (x) is varied. It has a critical composition for ferromagnetism at x=xc?59�60. MR was measured in the temperature range 1.7�110 K and up to a field of 7 T. The observed MR was small and the change was ?1%. The temperature dependence of MR was found to contain a positive and a negative contribution. The positive term was found to be ?H2 and it dominates at high field and high temperatures. We explain this as a manifestation of Kohler�s rule. The negative MR was found to have a quadratic dependence on magnetization M. The magnitude of the negative MR reaches a maximum as x?xc.

Origin of the unconventional magnetoresistance in Sr(2)FeMoO6(6)

The unusual magnetoresistance (MR) behavior in Sr2FeMoO6, recently termed as spin-valve-type MR (SVMR), presents several anomalies that are little understood so far. The difficulty in probing the origin of this phenomenon, arising from the magnetic property of only a small volume fraction of the ferromagnetic bulk, is circumvented in the present study by the use of ac susceptibility measurements that are sensitive to the slope rather than the magnitude of the magnetization. The present study unravels a spin-glass (SG) like surface layer around each soft ferromagnetic (FM) grain of Sr2FeMoO6. It is also observed that there is a very strong exchange coupling between the two, generating ``exchange bias'' effect, which consequently creates the ``valve'', responsible for the unusual MR effects. Copyright (C) EPLA, 2011

Magnetoresistance of the metallic perovskite oxide LaNiO3-delta

We report a study of the magnetoresistance (MR) of the metallic perovskite oxide LaNiO3-delta as a function of the oxygen stoichiometry delta (delta less than or equal to 0.14), magnetic field (H less than or equal to 6 T) and temperature (1.5 K less than or equal to T less than or equal to 25 K). We find a strong dependence of the nature of the MR on the oxygen stoichiometry. The MR at low temperatures changes from positive to negative as the sample becomes more oxygen deficient (i.e. delta increases). Some of the samples, which are more resistive, show resistivity minima at T-min approximate to 20 K. We find that in these samples the MR is positive for T > T-min and negative for T < T-min. We conclude that in the absence of strong magnetic interaction, the negative MR in these oxides can arise from weak-localization effects.

Microstructural evolution and giant magnetoresistance in melt spun and annealed Cu-85(FeCo)(15) alloy

Granular alloys of Cu with FeCo were prepared by the melt-spinning technique. The alloy was characterized by x-ray, transmission electron microscopy, vibrating sample magnetometer, and magnetoresistance measurements. The alloys were heat treated for different temperatures to optimize the magnetoresistance properties. Structural characterization reveals that the FeCo phase initially precipitates out as fcc and later transforms to the bcc structure by martensitic transformation. It is seen that the trend in the magnetoresistance properties is different for the measurements carried out at room temperature and 4.2 K. This has been attributed to the transformation of fine fcc precipitates to the bcc structure during the low temperature measurements. It is seen that the presence of fine particles causes an increase in the field for saturation and is not suitable for applications where moderate field giant magnetoresistance is required. (C) 1999 American Institute of Physics. [S0021-8979(99)08317-6].

Insulator-metal transition and magnetoresistance of La0.5Ca0.5MnOy induced by tuning the oxygen content

The oxygen content of La0.5Ca0.5MnOy was tuned by annealing the samples at high temperatures in flowing nitrogen with graphite powder nearby. The reduction of oxygen content has dramatic effect on the electrical transport and magnetic properties. The samples with y=2.983, 2.83, and 2.803 show an insulator-metal transition, and an unusual temperature and magnetic-field dependence of the magnetoresistance. The paramagnetic-ferromagnetic transition also shifts to lower temperatures and the antiferromagnetic transition at lower temperature is suppressed. The results are discussed in terms of the effect of oxygen vacancies on the various properties of La0.5Ca0.5MnOy. (C) 2002 American Institute of Physics.

Study of magnetoresistance and conductance of bicrystal grain boundary in La0.67Ba0.33MnO3 thin film

La0.67Ba0.33MnO3 (LBMO) thin film is deposited on a 36.7degrees SrTiO3 bicrystal substrate using laser ablation technique. A microbridge is created across bicrystal grain boundary and its characteristics are compared with a microbridge on the LBMO film having no grain boundary. Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature T > 175 K. At low temperature, I-V characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of temperature dependence of dynamic conductance-voltage characteristics of the bicrystal grain boundary indicates that at low temperatures (T < 175 K) carrier transport across the grain boundary in LBMO film is dominated by inelastic tunneling via pairs of manganese atoms and tunneling through disordered oxides. At higher temperatures (T > 175 K), magnetic scattering process is dominating. Decrease of bicrystal grain boundary contribution in magnetoresistance with the increase in temperature is due to enhanced spin-flip scattering process.

Transport properties and colossal magnetoresistance in epitaxial La0.67Cd0.33MnO3 thin film

An optimal composition of La0.67Cd0.33MnO3 was synthesized by ceramic route. The compound crystallized in a rhombohedral structure with lattice parameters a = 5.473(4) Å and α = 60°37′. Resistivity measurement showed an insulator-to-metal transition coupled with a ferromagnetic transition of around 255 K. Epitaxial thin films were fabricated on the LaAlO3 (100) substrate by a pulsed laser deposition technique. The psuedocubic lattice parameter a of the film is 3.873(4) Å. The insulator-to-metal transition of the film was observed at 250 K which is comparable with the bulk value. The film was ferromagnetic below this temperature. Magnetoresistance defined as ΔR/R0 = (RH−R0)/R0 was over −86% near the insulator-to-metal transition temperature of 240 K at 6 T magnetic field and over-30% at relatively low fields of 1 T. No magnetoresistance was observed at low temperatures in the film unlike in the polycrystalline sample, where about a 40% decrease in resistance was observed on applying 6 T magnetic field due to the spin dependent scattering at the grain boundaries.

Effect of particle size on the giant magnetoresistance of La0.7Ca0.3MnO3

Effect of particle size on the electron transport and magnetic properties of La0.7Ca0.3MnO3 has been investigated. While the ferromagnetic Tc, low field magnetic susceptibility, and insulator‐metal transition are markedly affected by the particle size, the maximum magnetoresistance exhibited by the samples near Tc is not sensitive to the particle size. However, the magnetoresistance at 4.2 K increases with decrease in particle size, suggesting a substantial contribution by the grain boundaries. Preliminary measurements on La0.7Sr0.3MnO3 samples of different particle sizes also corroborate the above conclusions.

Colossal magnetoresistance in epitaxial La(1-x-y)NayMnO3 thin film

We have synthesized La0.83Na0.11MnO2.93 by heating La2O3 and MnCO3 in NaCl melt at 900 °C. The exact composition was arrived by analyzing each ion by an independent chemical method. The compound crystallized in a rhombohedral structure and showed an insulator-to-metal transition at 290 K. Epitaxial thin films were fabricated on LaAlO3 (100) using a pulsed laser deposition technique. The film also showed an insulator-to-metal transition at 290 K. Magnetoresistance [ΔR/R0 = (RH−R0)/R0] was −71% near the insulator-to-metal transition temperature of 290 K at 6 T magnetic field.

Effect of ``dipolar-biasing'' on the tunability of tunneling magnetoresistance in transition metal oxide systems

We observe an unusual tunneling magnetoresistance (TMR) phenomenon in a composite of La2/3Sr1/3MnO3 with CoFe2O4 where the TMR versus applied magnetic field loop suggests a ``negative coercive field.'' Tracing its origin back to a ``dipolar-biasing'' of La2/3Sr1/3MnO3 by CoFe2O4, we show that the TMR of even a single composite can be tuned continuously so that the resistance peak or the highest sensitivity of the TMR can be positioned anywhere on the magnetic field axis with a suitable magnetic history of the sample. This phenomenon of an unprecedented tunability of the TMR should be present in general in all such composites. (C) 2012 American Institute of Physics.http://dx.doi.org/10.1063/1.4731206]

Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface

Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read heads. We show that a colossal nonsaturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field, reaching nearly 10 000% at 8 T, thus surpassing many known nonmagnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems an attractive candidate for on-chip magnetic field sensing.