Gold nanoresistors with near-constant resistivity in the cryogenic-to-room temperature range

Using a multiple plasma deposition-annealing (MDA) technique, we have fabricated an Au nanoisland-based thin film nanoresistor with a very low temperature coefficient of electrical resistivity in a cryogenic-to-room temperature range of 10 to 300 K. The nanoislanded gold film was deposited on a SiO2/Si wafer (500 nm SiO2 thickness) between two 300 nm thick Au electrodes which were separated by 100 m. A sophisticated selection of the thickness of the nanoislanded gold film, the annealing temperature, as well as the number of deposition/annealing cycles resulted in the fabrication of a nanoresistor with a temperature coefficient of electrical resistivity of 2.1 × 10-3 K-1 and the resistivity deviation not exceeding 2% in a cryogenic-to-room temperature range. We have found that the constant resistivity regime of the nanoisland-based thin film nanoresistor corresponds to a minimized nanoisland activation energy (approximately 0.3 meV). This energy can be minimized by reducing the nearest neighbor distance and increasing the size of the Au nanoislands in the optimized nanoresistor structure. It is shown that the constant resistivity nanoresistor operates in the regime where the thermally activated electron tunneling is compensated by the negative temperature dependence of the metallic-type conductivity of nanoislands. Our results are relevant to the development of commercially viable methods of nanoresistor production for various nanoelectronics-based devices. The proposed MDA technique also provides the opportunity to fabricate large arrays of metallic nanoparticles with controllable size, shapes and inter-nanoparticle gaps.

Structural, iono and thermoluminescence properties of heavy ion (100 MeV Si7+) bombarded Zn2SiO4:Sm3+ nanophosphor

Structural, iono (IL) and thermoluminescence (TL) studies of Zn2SiO4:Sm3+ (1-5 mol%) nanophosphor bombarded with swift heavy ions in the fluence range 3.91 x 10(12)-21.48 x 10(12) cm(-2) have been carried out. The average crystallite sizes for pristine and ion irradiated for 3.91 x 10(12) ions cm(-2) and 21.48 x 10(12) ions cm(-2) were found to be 34, 26 and 20 nm. With increase of ion fluence, the intensity of XRD peaks decreases and FWHM increases. The peak broadening indicates the stress induced point/clusters defects produced due to heavy ion irradiation. IL studies were carried out for different Sm3+ concentrations in Zn2SiO4 by irradiating with ion fluence of 15.62 x 10(12) ions cm(-2). The characteristic emission peaks at similar to 562, 599, 646 and 701 nm were recorded by exciting Si7+ ions in the fluence range 3.91 x 10(12)-21.48 x 10(12) ions cm(-2). These peaks were attributed to (4)G(5/2)-> H-6(5/2) (562 nm), (4)G(5/2)-> H-6(7/2) (599 nm), (4)G(5/2)-> H-6(9/2) (646 nm), and (4)G(5/2)-> H-6(5/2) (701 nm) transitions of Sm3+. The highest emission was recorded at 3 mol% of Sm3+ doped Zn2SiO4. TL studies were carried out for 3 mol% Sm3+ concentration in the fluence range 3.91 x 10(12)-21.48 x 10(12) ions cm(-2). Two U glow peaks at 152 and 223 degrees C were recorded. The kinetic parameters (E, b, and s), were estimated using Chen's peak shape method. Simple glow curve structure (223 degrees C), highly resistive, increase in TL. intensity up to 19.53 x 10(12) ions cm(-2), simple trap distribution makes Zn2SiO4:Sm3+ (3 mol%) phosphor highly useful in radiation dosimetry.

Photoproduction of charged pion pairs from hydrogen at energies up to 1500 MeV

Charged pion pair photoproduction has been investigated up to a gamma energy of 1500 MeV, using the Caltech 12-inch heavy liquid bubble chamber with a small diameter, high intensity photon beam passing through a central beam tube gaseous hydrogen target surrounded by the sensitive Freon. Scanning, analysis, and data reduction techniques have been developed to deal with the problems of two-vie stereo, hidden event origins, absence of magnetic field, and the range-energy and multiple scattering relationships that occur in the heavy materials. Roughly 5700 pictures have been scanned and analyzed, yielding 754 acceptable events. Cross section and parameter distributions are generally consistent with the results of previous experiments. A statistically insignificant “bump” was observed in the dipion mass spectrum in the region of 500 MeV, the disputed σ meson mass. This region was investigated as carefully as the limited statistics would allow; dipion angular distributions are consistent with isotropy, and there is indication that some of the events in this region might come from decay of an intermediate N*₁₁ (1425) into a proton and dipion.

Photographic materials on pp. 18, 20, 22, and 24 are essential and will not reproduce clearly on Xerox copies. Photographic copies should be ordered.

Photoproduction of charged pion pairs from hydrogen at photon energies between 800 and 1500 MeV

The reaction γ + p p + π⁺ + π^- has been studied for photon energies between 800 and 1500 MeV and for dipion masses between 510 and 900 MeV. The bremsstrahlung beam from the Caltech synchrotron was passed through a liquid hydrogen target and spark chambers were used to detect the three final particles. In addition, the proton energy was determined by a range measurement. Approximately 40,000 photographs were taken, yielding 3018 acceptable events. The results were fit to an incoherent combination of the N*(1238) resonance, the p^o (750) resonance, and three-body phase space, with various models being tried for p^o production. The total cross section for p^o production is consistent with previous experiments. However, the angular dependence of the cross section is slightly more peaked in the forward direction, and the ratio of p^o production to phase space production is larger than previously observed.

However, since this experiment was only sensitive to the production angles cos θ cm ≥ .75, statistical fluctuations and/or an anisotropic distribution of background production have a severe influence on the p^o to background ratio. Of the p^o models tested, the results prefer p^o production by the one pion exchange mechanism with a very steep form factor dependence. The values of the mass and width of the p^o found here are consistent with previous experiments.

InAs/GaSb superlattices for photodetection in short wavelength infrared range

The first report of a short wavelength infrared detector based on type II InAs/GaSb superlattices is presented. Very short period superlattices containing InAs (2ML)/GaSb (8ML) superlattices (SLs) were grown by molecular-beam epitaxy on GaSb substrates. The photoluminescence showed a cut-off wavelength at 2.1 mu m at 10 K and 2.6 mu m at 300 K. Room-temperature optical transmittance spectra shows obvious absorption in InAs (2ML)/GaSb (8ML) SL in the range of 450-680 meV, i.e. 1.8-2.7 mu m. The cut-off wavelength moved from 2.3 mu m to 2.6 mu m with temperature rising from 77 K to 300 K in photoresponse spectra. The blackbody response R-v exponentially decreased as a function of 1/T in two temperature sections (130-200 K and 230-300 K). The blackbody detectivity D-bb(center dot) was beyond 1 x 10(8) cmHz(1/2)/W at room temperature. (C) 2009 Elsevier B.V. All rights reserved.

EFFECTS OF 1-MEV-ELECTRON IRRADIATION ON A-SI SOLAR-CELLS

In this report we present the effects of 1 MeV-electron irradiation on i a-Si:H films and solar cells. It is observed that in the dose range of 1.4-8.4 x 10(15) cm(-2) the defect creation has not reached its saturation level and the metastable defects caused by the irradiation cannot be completely removed by a two hour annealing at 200 degrees C for i a-Si:H films or at 130 degrees C for a-Si:H solar cells. The results may be understood in terms of a model based on two kinds of metastable defects created by 1 MeV-electron irradiation.

REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING

Molecular beam epitaxy GaAs films on Si, with thicknesses ranging from 0.9-2.0-mu-m, were implanted with Si ions at 1.2-2.6 MeV to doses in the range 10(15)-10(16) cm-2. Subsequent rapid infrared thermal annealing was carried out at 850-degrees-C for 15 s in a flowing N2 atmosphere. Crystalline quality was analyzed by using Rutherfold backscattering/channeling technique and Raman scattering spectrometry. The experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. Complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. In the improved layer the defect density was much lower than in the as-grown layer, especially near the interface.

Design of the IMP microbeam irradiation system for 100 MeV/u heavy ions

Abstract A state-of-the-art high energy heavy ion microbeam irradiation system is constructed at the Institute of Modern Physics of the Chinese Academy of Sciences. This microbeam system operates in both full current intensity mode and single ion mode. It delivers a predefined number of ions to preselected targets for research in biology and material science. The characteristic of this microbeam system is high energy and vertical irradiation. A quadrupole focusing system, in combination with a series of slits, has been designed to optimize the spatial resolution. A symmetrically achromatic system leads the beam downwards and serves simultaneously as an energy analyzer. A high gradient quadrupole triplet finally focuses a C6+ ion beam to 1 µm in the vacuum chamber within the energy range from 10 MeV/u to 100 MeV/u. In this paper, the IMP microbeam system is described in detail. A systematic investigation of the ion beam optics of this microbeam system is presented together with the associated aberrations. Comparison is made between the IMP microbeam system and the other existing systems to further discuss the performance of this microbeam. Then the optimized initial beam parameters are given for high resolution and high hitting efficiency. At last, the experiment platform is briefly introduced.

Observation of the inhomogeneous spatial distribution of MeV ions accelerated by the hydrodynamic ambipolar expansion of clusters

An inhomogeneous spatial distribution of laser accelerated carbon/oxygen ions produced via the hydrodynamic ambipolar expansion of CO₂ clusters has been measured by using CR-39 detectors. An inhomogeneous etch pits spatial distribution has appeared on the etched CR-39 detector installed on the laser propagation direction, while homogeneous ones are appeared on those installed at 45°and 90°from the laser propagation direction. From the range of ions in CR-39 obtained by using the multi-step etching technique, the averaged energies of carbon/oxygen ions for all directions are determined as 0.78 ± 0.09 MeV/n. The number of ions in the laser propagation direction is about 1.5 times larger than those in other directions. The inhomogeneous etch pits spatial distribution in the laser propagation direction could originate from an ion beam collimation and modulation by the effect of electromagnetic structures created in the laser plasma.

Laser driven MeV proton beam focussing by auto-charged electrostatic lens configuration

Significant reduction of inherent large divergence of the laser driven MeV proton beams is achieved by strong (of the order of 10^9 V/m ) electrostatic focussing field generated in the confined region of a suitably shaped structure attached to the proton generating foil. The scheme exploits the positively charging of the target following an intense laser interaction. Reduction in the proton beam divergence, and commensurate increase in proton flux is observed while preserving the beam laminarity. The underlying mechanism has been established by the help of particle tracing simulations. Dynamic focussing power of the lens, mainly due to the target discharging, can also be exploited in order to bring up the desired chromaticity of the lens for the proton beams of broad energy range.

Caracterização do mineral zircão através do método de traços de fissão, espectroscopia micro-raman e MEV: geocronologia do grupo Bauru

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Análise in vitro da influência de três sistemas de fotopolimerização, através da MEV, na amplitude de fendas axiais em cavidades classe V restauradas com resina composta

Pós-graduação em Ciências Odontológicas - FOAR

Estudo teórico da contribuição à dose de partículas secundárias geradas por prótons de energias entre 100 e 200 MeV num Phantom de substituto de tecido MS20

The goal of this project is the reproduction, through the simulation code based on the MCNPX (Monte Carlo N-Particle eXtended) v2.50 method, of the proton beam interaction with the material, since, in proton therapy, only the particle ionization and excitation are analyzed and the occurence of nuclear interactive inelastic process are not considered. This work will help the development of studies concerning the contribution to the total dosis of secondary particles generated by nuclear interaction in proton therapy. They are: alpha particles ( ), deuterium(2H), tritium (3H), neutron (n) and helium (3He). A MS20 tissue substitute phantom was used as the target and the energy of the proton beams was within an interest range of 100 to 200MeV. With the results obtained, it was possible to generate graphics which allows the analysis of the dosis deposition relation with and without nuclear interaction, the percentage of secondary particles deposited dosis, the radial dispersion of neutrons in the material, the secondary particles multiplicity, as well as the relation between the secondary particles spectrum with the próton generated spectrum

Estudo teórico da contribuição a dose de partículas secundárias geradas por prótons de energias entre 100-200 MeV num phantom de músculo estriado

In the treatment plans in conventional Proton therapy are considered only the elastic interactions of protons with electrons and/or nuclei, it means, mainly ionization and coulomb excitation processes. As the energy needed to reach the deep tumors should be of several hundred of MeVs, certainly the nuclear inelastic channels are open. Only some previous studies of the contribution of these processes in the full dose have been made towards targets composed of water. In this study will be presented the results of the simulation of the processes of interaction of beams of protons in the range of 100-200 MeV of energy with a cylindrical phantom composed by striated muscle (ICRU), emphasizing in the contribution to total dose due to the deposition of energy by secondary particles alpha (α), deuterium (2H), tritium (3H), neutron (n) and hélio3 (3He), originated by nuclear inelastic processes. The simulations were performed by using the method of Monte Carlo, via the computer code MCNPX v2.50 (Monte Carlo N-Particle eXtended). The results will be shown demonstrated through the graphics of the deposited dose with or without nuclear interaction, the percentual of dose deposited by secondary particles, the radial dispersion of neutrons, as well as the multiplicity of secondary particles