Low temperature synthesis and electrical properties of PbTiO3 thin films prepared by the polymeric precursor method

Ferroelectric PbTiO3 thin films were successfully prepared on a Pt(111)Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. This method allows low temperature (500 degrees C) synthesis and high electrical properties. The multilayer PbTiO3 thin films were granular in structure with a grain size of approximately 110-120 nm. A 380-nm-thick film was obtained by carrying out four cycles of the spin-coating/heating process. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (=3.4 nm). At room temperature and at a frequency of 100 kHz, the dielectric constant and the dissipation factor were, respectively, 570 and 0.016. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behavior. The remanent polarization and coercive field for the films deposited were 13.62 mu C/cm(2) and 121.43 kV/cm, respectively. The high electrical property values are attributed to the excellent microstrutural quality and chemical homogeneity of thin films obtained by the polymeric precursor method. (C) 2000 Elsevier B.V. S.A. All rights reserved.

Microstructure and electrical properties of perovskite (Pb, La)TiO3 thin film deposited at low temperature by the polymeric precursor method

High-quality (Pb, La)TiO3 ferroelectric thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. The X-ray diffraction patterns show that the films are polycrystalline in nature. This method allows for low temperature (500 degrees C) synthesis, a high quality microstructure and superior dielectric properties. The effects on the microstructure and electrical properties were studied by changing the La content. The films annealed at 500 degreesC have a single perovskite phase with only a tetragonal or pseudocubic structure. As the La content is increased, the dielectric constant of PLT thin films increases from 570 up to 1138 at room temperature. The C-V and P-E characteristics of perovskite thin films prepared at a low temperature show normal ferroelectric behavior, representing the ferroelectric switching property. The remanent polarization and coercive field of the films deposited decreased due to the transformation from the ferroelectric to the paraelectric phase with an increased La content. (C) 2001 Kluwer Academic Publishers.

Low-temperature degradation of a Y-TZP ceramic after surface treatments

The purpose of this study was to evaluate the influence of zirconia surface treatments on low-temperature degradation (LTD). Disc-shaped specimens were subjected to one of four surface treatments, denoted as C (controlno surface treatment), Si (air abrasion with 30 mu m silica-modified alumina particles), Al (air abrasion with 30 mu m alumina particles), and Gr (grinding with 120 grit diamond discs). Half of the samples were submitted to autoclave treatment for 12 h (127 degrees C, 1.5 bar). Samples were characterized by x-ray diffraction and profilometer analysis and were subjected to biaxial flexural strength test. All of the groups exhibited an increase in the amount of monoclinic phase (m-phase) after LTD. The tm transformation was remarkable for the specimens from the C group, which also exhibited a significant increase in strength. The Gr group also exhibited an increase in strength but lower initial roughness, which probably suppressed LTD on the zirconia surface. The specimens subjected to air abrasion exhibited higher initial amounts of m-phase and a small increase in m-phase after LTD; the strength was not affected in these groups. The effects of LTD were different with each surface treatment applied. Apparently, LTD may be suppressed by smoother surfaces or the presence of an initial amount of m-phase on zirconia surface. (c) 2013 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 101B: 1387-1392, 2013.

Chemistry of low-temperature hydrothermal altered basement of ODP Site 129-801

Low-temperature hydrothermal alteration of basement from Site 801 was studied through analyses of the mineralogy, chemistry, and oxygen isotopic compositions of the rocks. The more than 100-m section of 170-Ma basement consists of 60 m of tholeiitic basalt separated from the overlying 60 m of alkalic basalts by a >3-m-thick Fe-Si hydrothermal deposit. Four alteration types were distinguished in the basalts: (1) saponite-type (Mg-smectite) rocks are generally slightly altered, exhibiting small increases in H2O, d18O, and oxidation; (2) celadonite-type rocks are also slightly altered, but exhibit uptake of alkalis in addition to hydration and oxidation, reflecting somewhat greater seawater/rock ratios than the saponite type; (3) Al-saponite-type alteration resulted in oxidation, hydration, and alkali and 18O uptake and losses of Ca and Na due to the breakdown of plagioclase and clinopyroxene; and (4) blue-green rocks exhibit the greatest chemical changes, including oxidation, hydration, alkali uptake, and loss of Ca, Na, and Mg due to the complete breakdown of plagioclase and olivine to K-feldspar and phyllosilicates. Saponite- and celadonite-type alteration of the tholeiite section occurred at a normal mid-ocean ridge basalt spreading center at temperatures <20°C. Near- or off-axis intrusion of an alkali basalt magma at depth reinitiated hydrothermal circulation, and the Fe-Si hydrothermal deposit formed from cool (<60°C) distal hydrothermal fluids. Focusing of fluid flow in the rocks immediately underlying the deposit resulted in the extensive alteration of the blue-green rocks at similar temperatures. Al-saponite alteration of the subsequent alkali basalts overlying the deposit occurred at relatively high water/rock ratios as part of the same low-temperature circulation system that formed the hydrothermal deposit. Abundant calcite formed in the rocks during progressive "aging" of the crust during its long history away from the spreading center.

Enhanced iron gettering by short, optimized low-temperature annealing after phosphorus emitter diffusion for industrial silicon solar cell processing

The introduction of a low-temperature (LT) tail after P emitter diffusion was shown to lead to considerable improvements in electron lifetime and solar cell performance by different researchers. So far, the drawback of the investigated extended gettering treatments has been the lack of knowledge about optimum annealing times and temperatures and the important increase in processing time. In this manuscript, we calculate optimum annealing temperatures of Fe-contaminated Si wafers for different annealing durations. Subsequently, it is shown theoretically and experimentally that a relatively short LT tail of 15 min can lead to a significant reduction of interstitial Fe and an increase in electron lifetime. Finally, we calculate the potential improvement of solar cell efficiency when such a short-tail extended P diffusion gettering is included in an industrial fabrication process.

Third-generation synchrotron x-ray diffraction of 6-μm crystal of raite, ≈Na3Mn3Ti0.25Si8O20(OH)2⋅10H2O, opens up new chemistry and physics of low-temperature minerals

The crystal structure of raite was solved and refined from data collected at Beamline Insertion Device 13 at the European Synchrotron Radiation Facility, using a 3 × 3 × 65 μm single crystal. The refined lattice constants of the monoclinic unit cell are a = 15.1(1) Å; b = 17.6(1) Å; c = 5.290(4) Å; β = 100.5(2)°; space group C2/m. The structure, including all reflections, refined to a final R = 0.07. Raite occurs in hyperalkaline rocks from the Kola peninsula, Russia. The structure consists of alternating layers of a hexagonal chicken-wire pattern of 6-membered SiO4 rings. Tetrahedral apices of a chain of Si six-rings, parallel to the c-axis, alternate in pointing up and down. Two six-ring Si layers are connected by edge-sharing octahedral bands of Na+ and Mn3+ also parallel to c. The band consists of the alternation of finite Mn–Mn and Na–Mn–Na chains. As a consequence of the misfit between octahedral and tetrahedral elements, regions of the Si–O layers are arched and form one-dimensional channels bounded by 12 Si tetrahedra and 2 Na octahedra. The channels along the short c-axis in raite are filled by isolated Na(OH,H2O)6 octahedra. The distorted octahedrally coordinated Ti4+ also resides in the channel and provides the weak linkage of these isolated Na octahedra and the mixed octahedral tetrahedral framework. Raite is structurally related to intersilite, palygorskite, sepiolite, and amphibole.

Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide

Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by low-temperature photoluminescence without the use of any magnetic field. However, the sensitivity and resolution provided by this technique rema1ns inadequate to resolve the minute binding energy differences of donors in GaAs and InP. To achieve higher sensitivity and resolution needed for the identification of donors, a magneto-photoluminescence system 1s installed along with a tunable dye laser, which provides resonant excitation. Donors 1n high purity GaAs are identified from the magnetic splittings of "two-electron" satellites of donor bound exciton transitions 1n a high magnetic field and at liquid helium temperature. This technique 1s successfully used to identify donors 1n n-type GaAs as well as 1n p-type GaAs in which donors cannot be identified by any other technique. The technique is also employed to identify donors in high purity InP. The amphoteric incorporation of Si and Ge impurities as donors and acceptors in (100), (311)A and (3ll)B GaAs grown by molecular beam epitaxy is studied spectroscopically. The hydrogen passivation of C acceptors in high purity GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) 1s investigated using photoluminescence. Si acceptors ~n MBE GaAs are also found to be passivated by hydrogenation. The instabilities in the passivation of acceptor impurities are observed for the exposure of those samples to light. Very high purity MOCVD InP samples with extremely high mobility are characterized by both electrical and optical techniques. It is determined that C is not typically incorporated as a residual acceptor ~n high purity MOCVD InP. Finally, GaAs on Si, single quantum well, and multiple quantum well heterostructures, which are fabricated from III-V semiconductors, are also measured by low-temperature photoluminescence.

Storage At Low Temperature Differentially Affects The Colour And Carotenoid Composition Of Two Cultivars Of Banana.

Different storage conditions can induce changes in the colour and carotenoid profiles and levels in some fruits. The goal of this work was to evaluate the influence of low temperature storage on the colour and carotenoid synthesis in two banana cultivars: Prata and Nanicão. For this purpose, the carotenoids from the banana pulp were determined by HPLC-DAD-MS/MS, and the colour of the banana skin was determined by a colorimeter method. Ten carotenoids were identified, of which the major carotenoids were all-trans-lutein, all-trans-α-carotene and all-trans-β-carotene in both cultivars. The effect of the low temperatures was subjected to linear regression analysis. In cv. Prata, all-trans-α-carotene and all-trans-β-carotene were significantly affected by low temperature (p<0.01), with negative estimated values (β coefficients) indicating that during cold storage conditions, the concentrations of these carotenoids tended to decrease. In cv. Nanicão, no carotenoid was significantly affected by cold storage (p>0.05). The accumulation of carotenoids in this group may be because the metabolic pathways using these carotenoids were affected by storage at low temperatures. The colour of the fruits was not negatively affected by the low temperatures (p>0.05).

Low temperature synthesis of CdSiO3 nanostructures

We report the synthesis of single-phase, crystalline CdSiO3 nanostructures at 580ºC; to the best of our knowledge, this is the lowest temperature at which this material is reported to form. The desired phase does not form below 580ºC, since the diffraction peaks are shifted to lower angles in the material treated at 570ºC when compared to JDPDS Card No. 85-0310. The source of silicon has strong influence on the product morphology: Na2SiO3 yields single-phase CdSiO3 in needle-shaped nanostructures, while high surface area mesostructured SiO2 yields coralloid-shaped particles. Low angle X-ray diffractometry reveals that the mesostructured nature of the silica precursor is not maintained in the resulting CdSiO3. Scanning electron microscopy suggests that in this case a transition occurs between the spherical morphology of the precursor and the needle-shape morphology of the material prepared from Na2SiO3. The surface area of the silica precursor has a strong influence in the reaction, since the use of commercial silica with a lower surface area does not yield the desired product.

Low-temperature study of a new nevirapine pseudopolymorph

The title compound (systematic name: 11-cyclopropyl-4-methyl-5,11-dihydro-6H-dipyrido[3,2-b: 2',3'-e][1,4] diazepin-6-one butanol 0.3-solvate), C15H14N4O center dot 0.3C(4)H(9)OH, was crystallized in a new triclinic pseudopolymorphic form, a butanol solvate, and the crystal structure determined at 150 K. The molecular conformation of this new form differs from that reported previously, although the main intermolecular hydrogen-bond pattern remains the same. N-H center dot center dot center dot O hydrogen bonds [N center dot center dot center dot O = 2.957 (3) angstrom] form centrosymmetric dimers and the crystal packing of this new pseudopolymorph generates infinite channels along the b axis.

Obtaining and stability verification of superconducting phases of the Nb-Al and Nb-Sn systems by mechanical alloying and low-temperature heat treatments

The development of Nb(3)Al and Nb(3)Sn superconductors is of great interest for the applied superconductivity area. These intermetallics composites are obtained normally by heat treatment reactions at high temperature. Processes that allow formation of the superconducting phases at lower temperatures (<1000 degrees C), particularly for Nb(3)Al, are of great interest. The present work studies phase formation and stability of Nb(3)Al and Nb(3)Sn superconducting phases using mechanical alloying (high energy ball milling). Our main objective was to form composites near stoichiometry, which could be transformed into the superconducting phases using low-temperature heat treatments. High purity Nb-Sn and Nb-Al powders were mixed to generate the required superconducting phases (Nb-25at.%Sn and Nb-25at.%Al) in an argon atmosphere glove-box. After milling in a Fritsch mill, the samples were compressed in a hydraulic uniaxial press and encapsulated in evacuated quartz tubes for heat treatment. The compressed and heat treated samples were characterized using X-ray diffractometry. Microstructure and chemical analysis were accomplished using scanning electron microscopy and energy dispersive spectrometry. Nb(3)Al XRD peaks were observed after the sintering at 800 degrees C for the sample milled for 30 h. Nb(3)Sn XRD peaks could be observed even before the heat treatment. (C) 2009 Elsevier B.V. All rights reserved.

Structure and properties of low temperature plasma carburized austenitic stainless steels

Austenitic stainless steels cannot be conventionally surface treated at temperatures close to 550 degrees C due to intense precipitation of nitrides or carbides. Plasma carburizing allows introducing carbon in the steel at temperatures below 500 degrees C without carbide precipitation. Plasma carburizing of AISI 316L was carried out at 480 degrees C and 400 degrees C, during 20 h, using CH(4) as carbon carrier gas. The results show that carbon expanded austenite (gamma(c)), 20 mu m in depth, was formed on the surface after the 480 degrees C treatment. Carbon expanded austenite (gamma(c)), 8 mu m in depth, was formed on the surface after the 400 degrees C treatment. DRX results showed that the austenitic FCC lattice parameter increases from 0.358 nm to 0.363 nm for the 400 degrees C treatment and to 0.369 nm for the 480 degrees C treatment, giving an estimation of circa 10 at.% carbon content for the latter. Lattice distortion, resulting from the expansion and the associated compressive residual stresses increases the surface hardness to 1040 HV(0.025). Micro-scale tensile tests were conducted on specimens prepared with the conditions selected above, which has indicated that the damage imposed to the expanded austenite layer was more easily related to each separated grain than to the overall macro-scale stresses imposed by the tensile test. (C) 2009 Elsevier B.V. All rights reserved.

Comparison between DC(+) and Square Wave AC SAW Current Outputs to Weld AISI 304 for Low-Temperature Applications

Welded equipment for cryogenic applications is utilized in chemical, petrochemical, and metallurgical industries. One material suitable for cryogenic application is austenitic stainless steel, which usually doesn`t present ductile/brittle transition temperature, except in the weld metal, where the presence of ferrite and micro inclusions can promote a brittle failure, either by ferrite cleavage or dimple nucleation and growth, respectively. A 25-mm- (1-in.-) thick AISI 304 stainless steel base metal was welded with the SAW process using a 308L solid wire and two kinds of fluxes and constant voltage power sources with two types of electrical outputs: direct current electrode positive and balanced square wave alternating current. The welded joints were analyzed by chemical composition, microstructure characterization, room temperature mechanical properties, and CVN impact test at -100 degrees C (-73 degrees F). Results showed that an increase of chromium and nickel content was observed in all weld beads compared to base metal. The chromium and nickel equivalents ratio for the weld beads were always higher for welding with square wave AC for the two types of fluxes than for direct current. The modification in the Cr(eq)/Ni(eq) ratio changes the delta ferrite morphology and, consequently, modifies the weld bead toughness at lower temperatures. The oxygen content can also affect the toughness in the weld bead. The highest absorbed energy in a CVN impact test was obtained for the welding condition with square wave AC electrical output and neutral flux, followed by DC(+) electrical output and neutral flux, and square wave AC electrical output and alloyed flux.

Vortex configuration flow cell based on low temperature cofired ceramics as a compact chemiluminescence microsystern

The integration of optical detection methods in continuous flow microsystems can highly extend their range of application, as long as some negative effects derived from their scaling down can be minimized. Downsizing affects to a greater extent the sensitivity of systems based on absorbance measurements than the sensitivity of those based on emission ones. However, a careful design of the instrumental setup is needed to maintain the analytical features in both cases. In this work, we present the construction and evaluation of a simple miniaturized optical system, which integrates a novel flow cell configuration to carry out chemiluminescence (CL) measurements using a simple photodiode. It consists of a micro-mixer based on a vortex structure, which has been constructed by means of the low-temperature cofired ceramics (LTCC) technology. This mixer not only efficiently promotes the CL reaction due to the generated high turbulence but also allows the detection to be carried out in the same area, avoiding intensity signal losses. As a demonstration, a flow injection system has been designed and optimized for the detection of cobalt(H) in water samples. It shows a linear response between 2 and 20 mu M with a correlation of r > 0.993, a limit of detection of 1.1 mu M, a repeatability of RSD = 12.4 %, and an analysis time of 17 s. These results demonstrate the suitability of the proposal to the determination of compounds involved in CL reactions by means of an easily constructed versatile device based on low-cost instrumentation.

Structure and properties of an austenitic stainless steel AISI 316L grade ASTM F138 after low temperature plasma nitriding

Austenitic stainless steels cannot be conventionally nitrided at temperatures near 550 degrees C due to the intense precipitation of chromium nitrides in the diffusion zone. The precipitation of chro-mium nitrides increases the hardness but severely impairs corrosion resistance. Plasma nitriding allows introducing nitrogen in the steel at temperatures below 450 degrees C, forming pre-dominantly expanded austenite (gamma(N)), with a crystalline structure best represented by a special triclin-ic lattice, with a very high nitrogen atomic concentration promoting high compressive residual stresses at the surface, increasing substrate hardness from 4 GPa up to 14 GPa on the nitrided case.