Modified LPE system used to diffuse Cd to obtain InSb infrared detectors

We are presenting here p/n junctions obtained with a modified opened liquid-phase epitaxy (LPE) system, used to diffuse indium antimonide (InSb) doped with Cd over InSb doped with Te wafers, in order to make InSb infrared (IR) sensors. This technique has several advantages: the diffusion can be performed in bigger substrate areas improving the device production; this method decreases the device manipulation, decreasing human mistakes and increasing the process reproducibility. The opened LPE in this work produced sensors in the first case with vapor of the diffusion material, coming from a microholed carbon boat full of the diffusion material, over which is positioned the substrate at atmospheric pressure. In the second, the diffusion material is on the bottom of a quartz recipient, and the InSb/Te wafer works as its cover, and vacuum was used. The IR sensors produced with the first method measured 8.9 x 10(7) cm Hz(1/2)/W as detectivity value and higher IR spectral response at 4.6 mu m, and those produced with the second 2.8 x 10(9) cm Hz(1/2)/W, at 4.4 mu m. Besides the electrical-optical properties, the structural properties of diffused layers were investigated by X-ray diffraction (XRD), scanning electron and atomic force microscopy (SEM, AFM), energy-dispersive and secondary ion mass spectroscopy (EDS, SIMS). (C) 2007 Elsevier B.V. All rights reserved.

Dramaticos contemporáneos de Lópe de Vega /

Contiene: vol. 1.- vol. 2.

Dramáticos contemporáneos de Lópe de Vega /

Contiene: Vol. 2.

Kronyka boleslawská o poslaupnosti knjžat a krĺů českých a slawných národu českého činech, od založenj téhož národu až do Jana Lucemberského wyprawugjcý. Nyní podruhé s snažnau pilnostj a s pomocý čtyr starých rukopisů, gesstě nikdý nesrownaných, bedliwěgi a lépe,

Ascribed to Dalimil Meziřícký as probable author. Cf. Mas ̣slṇ.; Ottův sl. n.

Síndrome de VOMIT (Victim of Modern Imaging Technology) en pacientes con trauma de abdomen cerrado que consultaron en la Unidad de emergencia del Hospital General ISSS sometidos a LPE periodo Enero 2012 a Diciembre 2014

La tecnología se ha extendido a todas las áreas de la medicina, incluida la imagenología. El síndrome V.O.M.I.T “VICTIM OF MODERN IMAGING TECHNOLOGY”, describe el conjunto de consecuencias adversas secundarias a la mala aplicación e interpretación imagenológica, vinculadas al diagnóstico, tratamiento ó pronóstico de los pacientes politraumatizados que ingresan al Servicio de Emergencia. Es una entidad clínica en si misma dentro del capítulo de errores médicos y los servicios de emergencia son áreas de riesgo para que suceda. Sin duda, es imprescindible conocerlo, medirlo y plantear medidas preventivas. En nuestro medio la real incidencia de este problema se desconoce. Es por eso que la pregunta de nuestra investigación es: ¿Con que frecuencia la decisión de realizar una laparotomía exploradora en trauma cerrado de abdomen, con claras indicaciones clínicas se ve retrasada en espera de estudios de imageneologia?. Nuestra hipótesis era que la toma de conducta quirúrgica en trauma cerrado de abdomen en la unidad de emergencia del Hospital General del Seguro Social está siendo retrasada por el Síndrome de V.O.M.I.T. la cual fue verdadera. Es por esto que el objetivo general de nuestro estudio fue demostrar la presencia y frecuencia de este síndrome. Para ello recolectamos del libro de procedimientos de Sala de Operaciones de la Unidad de Emergencia del Hospital General (ISSS) los números de expedientes de los pacientes que fueron sometido a Laparotomía Exploradora con diagnóstico trauma cerrado de abdomen, en el periodo de Enero 2012 a Diciembre 2014 posteriormente se revisaron dichos expedientes y analizaron los datos.

Imaging of human lens lipids by desorption electrospray ionization mass spectrometry

The lipid composition of the human lens is distinct from most other tissues in that it is high in dihydrosphingomyelin and the most abundant glycerophospholipids in the lens are unusual 1-O-alkyl-ether linked phosphatidylethanolamines and phosphatidylserines. In this study, desorption electrospray ionization (DESI) mass spectrometry-imaging was used to determine the distribution of these lipids in the human lens along with other lipids including, ceramides, ceramide-1-phosphates, and lyso 1-O-alkyl ethers. To achieve this, 25 μm lens slices were mounted onto glass slides and analyzed using a linear ion-trap mass spectrometer equipped with a custom-built, 2-D automated DESI source. In contrast to other tissues that have been previously analyzed by DESI, the presence of a strong acid in the spray solvent was required to desorb lipids directly from lens tissue. Distinctive distributions were observed for [M + H]+ ions arising from each lipid class. Of particular interest were ionized 1-O-alkyl phosphatidylethanolamines and phosphatidylserines, PE (18:1e/18:1), and PS (18:1e/18:1), which were found in a thin ring in the outermost region of the lens. This distribution was confirmed by quantitative analysis of lenses that were sectioned into four distinct regions (outer, barrier, inner, and core), extracted and analyzed by electrospray ionization tandem mass spectrometry. DESI-imaging also revealed a complementary distribution for the structurally-related lyso 1-O-alkyl phosphatidylethanolamine, LPE (18:1e), which was localized closer to the centre of the lens. The data obtained in this study indicate that DESI-imaging is a powerful tool for determining the spatial distribution of human lens lipids. © 2010 American Society for Mass Spectrometry.

Spray deposition of exfoliated MoS2 flakes as hole transport layer in perovskite-based photovoltaics

We propose the use of solution-processed molybdenum disulfide (MoS2) flakes as hole transport layer (HTL) for metal-organic perovskite solar cells. MoS2 bulk crystals are exfoliated in 2-propanol and deposited on perovskite layers by spray coating. We fabricated cells with glass/FTO/compact-TiO2/mesoporous-TiO2/CH3NH3PbI3/spiro- OMeTAD/Au structure and cells with the same structure but with MoS2 flakes as HTL instead of spiro-OMeTAD, the most widely used HTL. The electrical characterization of the cells with MoS2 as HTL show promising power conversion efficiency -η- of 3.9% with respect to cells with pristine spiro-OMeTAD (η=3.1%). Endurance test on 800-hour shelf life has shown higher stability for the MoS2–based cells (ΔPCE/PCE=-17%) with respect to the doped spiro-OMeTAD-based one (ΔPCE/PCE =-45%). Further improvements are expected with the optimization of the MoS2 deposition process

Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV

III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE). With the introduction of the energy bowing parameters of quaternaries, the theoretical calculations agree well with the measured PL peak energy data from pentenary samples.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (000 1) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 gm were gown in the temperature range 700-720 degrees C. The growth rate of ZnO films was estimated to be 0.3 mu m h(-1). Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films. (c) 2006 Elsevier B.V. All rights reserved.

Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions

Illustrated in this paper are two examples of altering planar growth into self-assembled island formation by adapting experimental conditions. Partial oxidation, undersaturated solution and high temperature change Frank-Van der Merwe (FM) growth of Al0.3Ga0.7As in liquid phase epitaxy (LPE) into isolated island deposition. Low growth speed, high temperature and in situ annealing in molecular beam epitaxy (MBE) cause the origination of InAs/GaAs quantum dots (QDs) to happen while the film is still below critical thickness in Stranski-Krastanow (SK) mode. Sample morphologies are characterized by scanning electron microscopy (SEM) or atomic force microscopy (AFM). It is suggested that such achievements are of value not only to fundamental researches but also to spheres of device applications as well. (c) 2004 Elsevier B.V. All rights reserved.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

The study on high efficient AlxGa1-xAs/GaAs solar cells

The investigation of AlxGa1-xAs/GaAs solar cells is carried out by means of both metalorganic chemical vapor deposition (MOCVD) and liquid-phase epitaxial (LPE) technique. The measurements of illuminated I-V characteristics, dark I-V characteristics and quantum efficiencies were performed for the GaAs solar cells made in author's laboratory. The measuring results revealed that the quality of materials in GaAs solar cell's structures is the key factor for getting high-efficient GaAs solar cells, but the effect of post-growth technology on the performances of GaAs solar cells is also very strong. The 21.95% (AM0, 2 x 2cm(2), 25 degreesC) high conversion efficiency in a typical GaAs solar cell has been achieved owing to improving the quality of materials as well as optimizing the post-growth technology of devices. (C) 2001 Elsevier Science B.V. All rights reserved.

InP-based optoelectronic devices for optical fiber communications

In this contribution we report the research and development of 1.55 mu m InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 mu m and 1.55 mu m InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7-10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 mu m and 1.55 mu m InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication.