High-power Nd:YAG planar waveguide laser with YAG and Al2O3 claddings

Thermal effects in Nd:YAG planar waveguide lasers with non-symmetrical claddings are discussed. The heat generated in the active core can be removed more efficiently by directly contacting the active core to the heat sink. Several cladding materials are compared to optimize the heat removal. Furthermore, uniform pumping is achieved with oblique edge-pumping technique. Using quasi-CW pumping at 1 KHz repetition rate, an average output power of 280 W with a slope efficiency of 38% is obtained with a positive unstable resonator. (C) 2008 Elsevier B.V. All rights reserved.

Efficient excitations of radially and azimuthally polarized Nd 3+:YAG ceramic microchip laser by use of subwavelength multilayer concentric gratings composed of Nb2O5/SiO2

Cylindrical vector beams were produced from laser diode end-pumped Nd:YAG ceramic microchip laser by use of two types of subwavelength multilayer gratings as the axisymmetric-polarization output couplers respectively. The grating mirrors are composed of high- and low-refractive-index (Nb2O5/SiO2) layers alternately while each layer is shaped into triangle and concentric corrugations. For radially polarized laser output, the beam power reached 610mW with a polarization extinction ratio ( PER) of 61: 1 and a slope efficiency of 68.2%; for azimuthally polarized laser output, the beam power reached 626mW with a PER of 58: 1 and a slope efficiency of 47.6%. In both cases, the laser beams had near-diffraction limited quality. Small differences of beam power, PER and slope efficiency between radially and azimuthally polarized laser outputs were not critical, and could be minimized by further optimized adjustment to laser cavity and the reflectances of respective grating mirrors. The results manifested, by use of the photonic crystal gratings mirrors and end-pumped microchip laser configuration, CVBs can be generated efficiently with high modal symmetry and polarization purity. (C) 2008 Optical Society of America.

Beam conditions for radiation generated by an electromagnetic J 0-correlated Schell-model source

Based on the 2 x 2 (electric field) cross-spectral density matrix, a model for an electromagnetic J(0)-correlated Schell-model beam is given that is a generalization of the scalar J(0)-correlated Schell-model beam. The conditions that the matrix for the source to generate an electromagnetic J(0)-correlated Schell-model beam are obtained. The condition for the source to generate a scalar J(0)-correlated Schell-model beam can be considered as a special case. (C) 2008 Optical Society of America

Energy transfer between Cr3+ and Ni2+ in transparent silicate glass ceramics containing Cr3+/Ni2+ co-doped ZnAl2O4 nanocrystals

The emission intensity of Ni2+ at 1200 nm in transparent ZnO-Al2O3-SiO2 glass ceramics containing ZnAl2O4 nanocrystals is improved approximately 8 times by Cr3+ codoping with 532 nm excitation. This enhanced emission could be attributed to an efficient energy transfer from Cr3+ to Ni2+, which is confirmed by time-resolved emission spectra. The energy transfer efficiency is estimated to be 57% and the energy transfer mechanism is also discussed. (C) 2008 Optical Society of America.

Enhanced luminescence from transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics by Ga2O3 addition

Transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics without and with Ga2O3 were synthetized. The precipitation of spinel nanocrystals, which was identified as solid solutions in the glass ceramics, could be favored by Ga2O3 addition and their sizes were about 7.6 nm in diameter. The luminescent intensity of the Ni2+-doped glass ceramics was largely enhanced by Ga2O3 addition which could mainly be caused by increasing of Ni2+ in the octahedral sites and the reduction of the mean frequency of phonon density of states in the spinel nanocrystals of solid solutions. The full width at half maximum (FWHM) of emissions for the glass ceramics with different Ga2O3 content was all more than 200 nm. The emission lifetime increased with the Ga2O3 content and the longest lifetime is about 250 mu s. The Ni2+-doped transparent glass ceramics with Ga2O3 addition have potential application as broadband optical amplifier and laser materials. (C) 2007 Elsevier Ltd. All rights reserved.

Growth, etching morphology and spectra of LiAlO2 crystal

gamma-LiAlO2 single crystal was successfully grown by Czochralski method. The crystal quality was characterized by X-ray rocking curve and chemical etching. The effects of air-annealing and vapor transport equilibration (VTE) on the crystal quality, etch pits and absorption spectra of LiAlO2 were also investigated in detail. The results show that the as-grown crystal has very high quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec. Dislocation density in the middle part of the crystal is as low as about 3.0 x 10(3) cm(-2). The VTE-treated slice has larger FWHM value, etch pits density and absorption coefficient as compared with those of untreated and air-annealed slices, which indicates that the crystal quality became inferior after VTE treatment. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of gamma-irradiation and air annealing on Yb-doped Y3Al5O12 single crystal

The effects of gamma-irradiation on the air-annealed 10 at.% Yb:Y3Al5O12 (YAG) and air annealing on the gamma-irradiated 10at.% Yb:YAG have been studied by the difference absorption spectra before and after treatment. The gamma-irradiation and air annealing led to opposite changes of the absorption properties of the Yb:YAG crystal. After air annealing, the gamma-irradiation induced centers were totally removed and the concentration of Fe3+ and Yb3+ were lightly increased. For the first time, the gamma-irradiation induced valence changes between Yb3+ and Yb2+ ions in Yb:YAG crystals have been observed. (C) 2007 Elsevier B.V. All rights reserved.

Enhancement of ferromagnetic properties in In1.99Co0.01O3 by additional Cu doping

This paper reports room-temperature ferromagnetism in Co- and Cu-doped In2O3 samples synthesized by a solid-state reaction method. Structure and composition analyses revealed that Co and Cu were incorporated into the In2O3 lattices. Photoluminescence measurement revealed an additional emission at 520 urn from these doped samples. The magnetic measurement showed that additional Cu doping greatly enhanced the ferromagnetism of In1.99Co0.01O3 bulk samples. The implication of the effects of additional Cu doping is also discussed. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Eu:Y2O3 nano-phosphor prepared by novel energy-saving solution combustion method

A novel energy- and time-saving solution combustion method has been developed to prepare Eu:Y2O3 nano-crystal line phosphor. This novel method employs anhydrous ethanol as solvent and fuel. The prepared nano-crystals after heat-treatment own narrow size distribution, well dispersibility and sinterability, confirmed by XRD, TEM and FTIR. The emission spectra of nano-Eu:Y2O3 Samples show clear nano-size related phenomena. (c) 2007 Elsevier B.V. All rights reserved.

Growth and characterization of high-quality LiAlO2 single crystal

g-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high-resolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec and etch pits density of (0.3-2.2) x 10(4) cm(-2) throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5 mu m and becomes completely absorbing around 6.7 mu m wavelength. The optical absorption edge in near UV region is about 191 nm.

Growth and characterization of ZnO films on (0 0 1), (1 0 0) and (0 1 0) LiGaO2 substrates

ZnO films were fabricated on LiGaO2 (0 0 1), (10 0) and (0 10) planes by RF magnetron sputtering. The structural, morphological and optical properties of as-grown ZnO films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. It is found that the orientation of ZnO films is strongly dependent on the substrate plane. [0 0 0 11, [1 (1) over bar 00] and [11 (2) over bar0] oriented ZnO films are deposited on LiGaO2 (001), (100) and (010), respectively. AFM shows the (0001) ZnO film consists of well-aligned regular hexagonal grains. Raman spectra reveal a tensile stress in the (0 0 0 1) ZnO film and a compressive stress in (110 0) and (112 0) ZnO films. PL spectra of all ZnO films exhibit only a near-band-edge UV emission peak. (C) 2008 Elsevier B.V. All rights reserved.

Anisotropic crystallographic properties, strain, and their effects on band structure of m -plane GaN on LiAlO2 (100)

The m-plane GaN films grown on LiAlO2(100) by metal-organic chemical vapor deposition exhibit anisotropic crystallographic properties. The Williamson-Hall plots point out they are due to the different tilts and lateral correlation lengths of mosaic blocks parallel and perpendicular to GaN[0001] in the growth plane. The symmetric and asymmetric reciprocal space maps reveal the strain of m-plane GaN to be biaxial in-plane compress epsilon(xx)=-0.79% and epsilon(zz)=-0.14% with an out-of-plane dilatation epsilon(yy)=0.38%. This anisotropic strain further separates the energy levels of top valence band at Gamma point. The energy splitting as 37 meV as well as in-plane polarization anisotropy for transitions are found by the polarized photoluminescence spectra at room temperature. (c) 2008 American Institute of Physics.

Growth and spectral properties of Er:Gd2SiO5 crystal

Er3+ -doped Gd2SiO5 (Er:GSO) single crystal with dimensions of circle divide 35 x 40 mm(3) has been grown by the Czochralski method. The absorption and fluorescence spectra of the Er:GSO crystal were measured at room temperature. The spectral parameters were calculated based on Judd-Ofelt theory, and the intensity parameters Omega(2), Omega(4) and Omega 6 are obtained to be 6.168 x 10(-20), 1.878 x 10(-20), and 1.255 x 10(-20) cm(2), respectively. The emission cross-section has been calculated by Fuechtbauer-Ladenbury formula. (c) 2007 Elsevier B.V. All rights reserved.

Influence of carbon on the thermoluminescence and optically stimulated luminescence of α -Al2O3:C crystals

alpha-Al2O3:C crystal shows excellent thermoluminescence (TL) and optically stimulated luminescence (OSL) properties but the real role carbon plays in this crystal is still not clearly understood so far. In this work, alpha-Al2O3:C crystal doping with different amounts of carbon were grown by the temperature gradient technique, and TL and OSL properties of as-grown crystals were investigated. Additionally, a mechanism was proposed to explain the role of carbon in forming the TL and OSL properties of alpha-Al2O3:C. TL and OSL intensities of as-grown crystals increase with the increasing amount of carbon doping in the crystal, but no shift is found in the glow peak location at 465 K. As the amount of carbon doping in the crystals decreases, OSL decay rate becomes faster. With the increase in heating rate, the integral TL response of as-grown crystals decreases and glow peak shifts to higher temperatures. TL response decrease rate increases with the increasing amount of carbon doping in the crystals. All the TL and OSL response curves of as-grown crystals show linear-sublinear-saturation characteristic, and OSL dose response exhibits higher sensitivity and wider linear dose range than that of TL. The crystal doping with 5000 ppm carbon shows the best dosimetric properties. Carbon plays the role of a dopant in alpha-Al2O3:C crystal and four-valent carbon anions replace the two-valent anions of oxygen during the crystal growth process, and large amounts of oxygen vacancies were formed, which corresponds to the high absorption coefficient of F and F+ centers in the crystals.

Influences of Al doping concentration on structural, electrical and optical properties of Zn0.95Ni0.05O powders

Nanocrystalline Zn0.95 - xNi0.05AlxO (x = 0.01, 0.02, 0.05 and 0.10) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicate that all Al-doped Zn0.95Ni0.05O samples have the pure wurtzite structure. Transmission electron microscope analyses show that the as-synthesized powders are of the size 40 - 45 nm. High-resolution transmission electron microscope, energy dispersive spectrometer and X-ray photoemission spectroscope analyses indicate that Ni2+ and Al3+ uniformly substitute Zn2+ in the wurtzite structure without forming any secondary phases. The Al doping concentration dependences of cell parameters (a and c), resistance and the ratio of green emission to UV emission have the similar trends. (c) 2007 Elsevier B.V. All rights reserved.