Ternary lithium based compounds used for technological applications

Im Rahmen dieser Dissertation wurden ternäre Li-haltige Halb-Heusler Verbindungen sowie dazu strukturell-verwandte Verbindungen untersucht. Diese Verbindungen sind potentielle Kandidaten für optoelektronische und spintronische Anwendungen.rnEinige der untersuchten Verbindungen sind auch als Elektroden Materialien inrnLi-Batterien geeignet. Neben der Synthese und der Untersuchung der chemischenrnEigenschaften wurden daher insbesondere die physikalischen Eigenschaften näherrnuntersucht. Im speziellen wurden Halb-Heusler Verbindungen wie LiMgZ (Z = P,rnAs, Sb) und LiZn1−xMnxP synthetisiert und charakterisiert. Des Weiteren wurdenrndie Verbindungen LiMnAs, LaOMnAs und LiCuS näher studiert.rnVerbindungen des Typs LiMgZ (Z = P, As, Sb) sind potentielle Anode-Materialienrnin Li-Batterien. Im Rahmen der Arbeit gelang es diese Verbindungen einphasig zurnsynthetisieren. Mit Hilfe der UV-VIS Spektroskopie wurden Bandlücken im Bereichrnvon 0.9 und 2.3 eV bestimmt. 7Li NMR Spektroskopie zeigte eine ausreichende LirnMobilität, die sich mit steigender Temperatur erhöht.rnWeiterhin wurde die Mischkristallserie LiZn1−xMnxP mit x = 0.04, 0.08 und 0.10rnuntersucht. Ziel dieser Arbeit war es aus dem Halbleiter LiZnP durch Dotierungrneinen verdünnten magnetischen Halbleiter herzustellen. Diese Materialien werdenrninsbesondere in der Spintronik benötigt. Optische Messungen zeigten, dass diernDotierung bis x = 0.10 zu einer Reduzierung der Bandlücke von 1.80 eV für LiZnPrnzu 1.18 eV für LiZn0.90Mn0.10P führt. Magnetische Untersuchungen erwiesen paramagnetischesrnCurie-Weiss Verhalten und negative Weiss Konstanten, die auf einernantiferromagnetische Ordnung bei tiefen Temperaturen hindeuten.rnLiMnAs und LaOMnAs sind beides antiferromagnetische Halbleiter, die insbesonderernf¨ur spinelektronische Anwendungen von Bedeutung sind. Die magnetischernStruktur von LiMnAs wurde mit Hilfe der Neutronenbeugung näher untersucht. DiernNeel Temperatur wurde zu 374 K bestimmt. Bei einer Temperatur von T = 768 Krnkommt es zu einer Phasenumwandlung. Die tetragonale Struktur wandelt sich hierrnin einer kubischen Halb-Heusler Phase um. Dichte Funktional Rechnungen sind inrnguter Übereinstimmung mit den experimentellen Werten. Darüberhinaus wurde diernKopplung der magnetischen Momente näher bestimmt.rnrnEine Verbindung der Zusammensetzung LiCuS wurde in der Literatur beschriebenrnals eine Phase, die sich bei der Reaktion von Li mit CuS in Li/CuS Batteriesystemrnbildet. Diese Verbindung ist auch als Ersatz von CdS in Pufferschicht vonrnDünnfilm-Solarzellen von Interesse. Es gelang erstmals diese Verbindung einphasigrnherzustellen. Sie kristallisiert gelb mit der nicht-stöchiometrischen ZusammensetzungrnLi1.1Cu0.9S. Die Kristallstruktur wurde mit Hilfe von NMR, PXRD und Neutronenbeugungrnaufgeklärt. Die Bandlücke wurde aus den optischen Messungenrnvon Dünnschichten bestimmt und beträgt circa 2 eV. Dieser Wert ist in guter Übereinstimmung mit DFT Ergebnissen. Wird der Li-Gehalt erhöht, erhält manrnab circa Li1.7Cu0.3S eine kubische Phase. Sie ist isotyp mit Li2S, die im anti-CaF2 Typ kristallisiert. Diese Verbindung ist ein direkter Halbleiter mit einer Bandlücke von 2.4 eV nach DFT Rechnungen.

Field-free control of magnetism in nanostructured materials probed with high resolution X-ray microscopy

Magnetic memories are a backbone of today's digital data storage technology, where the digital information is stored as the magnetic configuration of nanostructured ferromagnetic bits. Currently, the writing of the digital information on the magnetic memory is carried out with the help of magnetic fields. This approach, while viable, is not optimal due to its intrinsically high energy consumption and relatively poor scalability. For this reason, the research for different mechanisms that can be used to manipulate the magnetic configuration of a material is of interest. In this thesis, the control of the magnetization of different nanostructured materials with field-free mechanisms is investigated. The magnetic configuration of these nanostructured materials was imaged directly with high resolution x-ray magnetic microscopy. rnFirst of all, the control of the magnetic configuration of nanostructured ferromagnetic Heusler compounds by fabricating nanostructures with different geometries was analyzed. Here, it was observed that the magnetic configuration of the nanostructured elements is given by the competition of magneto-crystalline and shape anisotropy. By fabricating elements with different geometries, we could alter the point where these two effects equilibrate, allowing for the possibility to tailor the magnetic configuration of these nanostructured elements to the required necessities.rnThen, the control of the magnetic configuration of Ni nanostructures fabricated on top of a piezoelectric material with the magneto-elastic effect (i.e. by applying a piezoelectric strain to the Ni nanostructures) was investigated. Here, the magneto-elastic coupling effect gives rise to an additional anisotropy contribution, proportional to the strain applied to the magnetic material. For this system, a reproducible and reversible control of the magnetic configuration of the nanostructured Ni elements with the application of an electric field across the piezoelectric material was achieved.rnFinally, the control of the magnetic configuration of La0.7Sr0.3MnO3 (LSMO) nanostructures with spin-polarized currents was studied. Here, the spin-transfer torque effect was employed to achieve the displacement of magnetic domain walls in the LSMO nanostructures. A high spin-transfer torque efficiency was observed for LSMO at low temperatures, and a Joule-heating induced hopping of the magnetic domain walls was observed at room temperatures, allowing for the analysis of the energetics of the domain walls in LSMO.rnThe results presented in this thesis give thus an overview on the different field-free approaches that can be used to manipulate and tailor the magnetization configuration of a nanostructured material to the various technological requirements, opening up novel interesting possibilities for these materials.

Magnetic tunneling junctions with the Heusler compound Co 2 Cr 0.6 Fe 0.4 Al

Materialen mit sehr hoher Spinpolarisation werden für Anwendungen im Bereich der Spin-Elektronik benötigt. Deshalb werden große Forschungsanstrengungen zur Untersuchung der Eigenschaften von Verbindungen mit potentiell halbmetallischem Charakter, d. h.mit 100% Spinpolarisation, unternommen. In halbmetallischen Verbindungen, erwartet man eine Lücke in der Zustandsdichte an der Fermi Energie für Ladungsträger einer Spinrichtung, wahrend die Ladungsträger mit der anderen Spinrichtung sich metallisch verhalten. Eine Konsequenz davon ist, dass ein Strom, der durch solche Verbindung fließt, voll spinpolarisiert ist. Die hohe Curie-Temperatur Tc (800 K) und der theoretisch vorhergesagte halbmetallische Charakter machen Co2Cr0.6Fe0.4Al (CCFA) zu einem guten Kandidaten für Spintronik-Anwendungen wie magnetische Tunnelkontakte (MTJs = Magnetic Tunneling Junctions). In dieser Arbeit werden die Ergebnisse der Untersuchung der elektronischen und strukturellen Eigenschaften von dünnen CCFA Schichten dargestellt. Diese Schichten wurden in MTJs integriert und der Tunnel-Magnetowiderstands-Effekt untersucht. Hauptziele waren die Messung der Spinpolarisation und Untersuchungen der elektronischen Struktur von CCFA. Der Einfluss verschiedener Depositionsparameter auf die Eigenschaften der Schichten, speziell auf der Oberflächenordnung und damit letztlich auf den Tunnel-Magnetowiderstand (TMR), wurde bestimmt. Epitaktische d¨unne CCFA Schichten mit zwei verschiedenen Wachstumsrichtungen wurden auf verschiedene Substrate und Pufferschichten deponiert. Ein Temperverfahren wurde eingesetzt um die strukturelle Eigenschaften der dünnen Schichten zu verbessern. Für die MTJs wurde Al2O3 als Barrierenmaterial verwendet und Co als Gegenelektrode gewählt. Die Mehrschicht-Systeme wurden in Mesa-Geometrie mit lithographischen Methoden strukturiert. Eine maximal Jullière Spinpolarisation von 54% wurde an Tunnelkontakte mit epitaktischen CCFA Schichten gemessen. Ein starker Einfluss der Tempernbedingungen auf dem TMR wurde festgestellt. Eine Erhörung des TMR wurde mit einer Verbesserung der Oberflächenordung der CCFA Schichten korreliert. Spektroskopische Messungen wurden an den MTJs durchgeführt. Diesen Messungen liefern Hinweise auf inelastische Elektron-Magnon und Elektron-Phonon Stossprozesse an den Grenzflächen. Einige der beobachteten Strukturen konnten mit der berechneten elektronischen Struktur von CCFA korreliert worden.

Heusler compounds as thermoelectric materials

Heusler compounds as thermoelectric materialsrnrnThis work reports on Heusler and Half Heusler compounds and their thermoelectric properties. Several compounds were synthesized and their resistivity, Seebeck coefficient, thermal conductivity, and the figure of merit were determined. The results are presented in the following chapters.rnrnIn chapter 3 Co was substituted with Ni and Fe in the series TiCo1-x(Fe0.5Ni0.5)xSb. The substitution lead to a reduced loss of Sb during the synthesis. Further the Seebeck coefficient was increased and the thermal conductivity was reduced. These observations can be used to significantly improve the quality of TiCoSb based compounds in thermoelectric applications. rnrnIn chapter 4 the series TiCo1-xNixSnxSb1-x was investigated. Ni was substituted with Co and Sn with Sb. Especially for high Ni concentrations the figure of merit was enhanced compared to unsubstituted TiCoSb. This enhancement is based on the strong reduction of the thermal conductivity. The found values are among the lowest that have been determined up to date for Heusler compounds. rnrnIn chapter 5 Li containing Heusler compounds were theoretically and experimentally investigated. Li containing Heusler compounds are of special interest because the Li atoms scatter phonons efficiently. Therefore the thermal conductivity is decreased. The thermoelectric properties and especially the thermal conductivity are investigated in this chapter.rnrnIn chapter 6 several substitutions of TiCoSb were investigated. In the series TiCo1+xSb additional Co was introduced into the vacancies of the compound and the effect on the thermoelectric properties was measured. In the series TiCo1-xCuxSb Co was substituted with Cu. No significant enhancement of the ZT value were observed. In the series TiCoSb1-xBix Sb was substituted by Bi. The thermoelectric properties were significantly enhanced for small Bi concentrations. The Seebeck coefficient was increased and the resistivity was reduced at the same time. This unusual phenomenon is explained by band structure calculations.rnrnIn chapter 7 the material class of half metallic ferromagnets was investigated as a new materialclass for thermoelectric applications. The 26 valence electron compounds Co2TiSi, Co2TiGe, and Co2TiSn were used as model systems. The transport properties were determined theoretically. Then the properties were measured and compared to the calculated ones. The calculated values are in good agreement with the experimentally determined ones. The observed Seebeck coefficient has a big value and is nearly constant above the Curie temperature. This makes the materials appealing for the use as materials in thermocouples.rn

Thermoelectric properties in phase-separated half-Heusler materials

The conversion of dissipated heat into electricity is the basic principle of thermoelectricity. In this context, half-Heusler (HH) compounds are promising thermoelectric (TE) materials for waste heat recovery. They meet all the requirements for commercial TE applications, ranging from good efficiencies via environmentally friendliness to being low cost materials. This work focused on the TE properties of Ti0.3Zr0.35Hf0.35NiSn-based HH materials. This compound undergoes an intrinsic phase separation into a Ti-poor and Ti-rich HH phase during a rapid solidification process. The resulting dendritic microstructure causes a drastic reduction of the thermal conductivity, leading to higher TE efficiencies in these materials. The TE properties and temperature dependence of the phase-separated Ti0.3Zr0.35Hf0.35NiSn compound were investigated. The TE properties can be adjusted depending on the annealing treatment. The extension of annealing time for 21 days at 1000 °C revealed a reduction of the thermal conductivity and thus an enhancement of the TE performance in this sample. An increase of annealing temperature caused a change of the phase fraction ratio in favor of the Ti-rich phase, leading to an improvement of the electronic properties. rnInspired by the TE properties of the Ti0.3Zr0.35Hf0.35NiSn HH compound, the performance of different n- and p-type materials, realized via site substitution with donor and acceptor elements was examined. The fabrication of a TE n- and p-type material pair based on one starting compound can guarantee similar TE and mechanical properties and is enormous beneficial for device engineering. As donor dopants V, Nb and Sb were tested. Depending on the lattice position small doping levels were sufficient to attain distinct improvement in their TE efficiency. Acceptor-induced doping with Sc, Y and Co caused a change in the transport behavior from n- to p- type conduction, revealing the highest Seebeck coefficients obtained in the MNiSn system. rnThen, the long-term stability of an exemplary n- and p-type HH compound was proven. Surprisingly, the dendritic microstructure can be maintained even after 500 cycles (1700 h) from 373 to 873 K. The TE performance of both n- and p-type materials showed no significant change under the long-term treatment, indicating the extraordinary temperature stability of these compounds. Furthermore both HH materials revealed similar temperature-dependence of their mechanical properties. This work demonstrates the excellent suitability of phase-separated HH materials for future TE applications in the moderate temperature range.rn

Investigation of acceptor dopants in ZrNiSn half-Heusler materials

Thermoelectric generators (TEG) are solid state devices and are able to convert thermal energy directly into electricity and thus could play an important role in waste heat recovery in the near future. Half-Heusler (HH) compounds with the general formula MNiSn (M = Ti, Zr, Hf) built a promising class of materials for these applications because of their high Seebeck coefficients, their environmentally friendliness and their cost advantage over conventional thermoelectric materials.rnrnMuch of the existing literature on HH deals with thermoelectric characterization of n-type MNiSn and p-type MCoSb compounds. Studies on p-type MNiSn-based HHs are far fewer in number. To fabricate high efficient thermoelectric modules based on HH compounds, high performance p-type MNiSn systems need to be developed that are compatible with the existing n-type HH compounds. This thesis explores synthesis strategies for p-type MNiSn based compounds. In particular, the efficacy of transition metals (Sc, La) and main group elements (Al, Ga, In) as acceptor dopants on the Sn-site in ZrNiSn, was investigated by evaluating their thermoelectric performance. The most promising p-type materials could be achieved with transition metal dopants, where the introduction of Sc on the Zr side, yielded the highest Seebeck coefficient in a ternary NiSn-based HH compound up to this date. Hall effect and band gap measurements of this system showed, that the high mobility of minority carrier electrons dominate the transport properties at temperatures above 500 K. It could be shown that this is the reason, why n-type HH are successful TE materials for high temperature applications, and that p-types are subjected to bipolar effects which will lead to diminished thermoelectric efficiencies at high temperatures.rnrnTo complement the experimental investigations on different metal dopants and their influence on the TE properties of HH compounds, numerical solutions to the Boltzmann transport equation were used to predict the optimum carrier concentration where the maximum TE efficiency occurs for p-type HH compounds. The results for p-type samples showed that can not be treated within a simple parabolic band model approach, due to bipolar and multi-band effects.rnrnThe parabolic band model is commonly used for bulk TE materials. It is most accurate when the transport properties are dominated by one single carrier type. Since the transport properties of n-type HH are dominated by only one carrier type (high mobility electrons), it could be shown, that the use of a simple parabolic band model lead to a successful prediction of the optimized carrier concentration and thermoelectric efficiency in n-type HH compounds. rn

Chemische Gasphasenabscheidung von Germanium-Chalkogen-Verbindungen für die Verwendung in nichtflüchtigen Festkörperspeichern

Magdeburg, Univ., Fak. für Elektrotechnik und Informationstechnik, Diss., 2013

Producció i caracterització d'aliatges tipus Heusler sense Gal•li

L’objecte del present treball és produir, caracteritzar i comparar aliatges tipusHeusler no estequiomètrics de base Ni-Mn-Sn-X (on X= Co, Fe per tant, es pretén generar mostres dels aliatges utilitzant els precursors ambuna composició que variï de l’establerta per Heusler. La morfologia del material será en forma de cinta, ja que és la morfologia més semblant a les aplicacions industrials que voldrem aplicar a aquests aliatges

Temperature and magnetic-field dependence of the elastic constants of Ni-Mn-Al magnetic Heusler alloy

We report on measurements of the adiabatic second-order elastic constants of the off-stoichiometric Ni54Mn23Al23 single-crystalline Heusler alloy. The variation in the temperature dependence of the elastic constants has been investigated across the magnetic transition and over a broad temperature range. Anomalies in the temperature behavior of the elastic constants have been found in the vicinity of the magnetic phase transition. Measurements under applied magnetic field, both isothermal and variable temperature, show that the value of the elastic constants depends on magnetic order, thus giving evidence for magnetoelastic coupling in this alloy system.

Coexisting ferro- and antiferromagnetism in Ni2MnAl Heusler alloys

The structural and magnetic properties of stoichiometric Ni2MnAl are studied to clarify the conditions for ferromagnetic and antiferromagnetic ordering claimed to occur in this compound. X-ray and magnetization measurements show that although a single phase B2 structure can be stabilized at room temperature, a single L21 phase is not readily stabilized, but rather a mixed L21+B2 state occurs. The mixed state incorporates ferromagnetic and antiferromagnetic parts for which close-lying Curie and a Néel temperatures can be identified from magnetization measurements.

Magnetoelastic behavior of the Heusler Ni2MnGa alloy

In this work the effect of the interplay between magnetic and structural degrees of freedom in the structural transitions undergone by Ni2MnGa alloy is investigated. Elastic constant and magnetic susceptibility measurements in a magnetic field are presented. A simple phenomenological model is proposed to account for the experimental observations.

Microstructure and magnetic properties of Ni50 Mn37 Sn13 Heusler alloy ribbons

The Heusler alloy Ni50 Mn37 Sn13 was successfully produced as ribbon flakes of thickness around 7-10 μm melt spinning. Fracture cross section micrographs in the ribbon show the formation of a microcrystalline columnarlike microstructure, with their longer axes perpendicular to the ribbon plane. Phase transition temperatures of the martensite-austenite transformation were found to be MS =218 K, Mf =207 K, AS =224 K, and Af =232 K; the thermal hysteresis of the transformation is 15 K. Ferromagnetic L 21 bcc austenite phase shows a Curie point of 313 K, with cell parameter a=0.5971 (5) nm at 298 K, transforming into a modulated 7M orthorhombic martensite with a=0.6121 (7) nm, b=0.6058 (8) nm, and c=0.5660 (2) nm, at 150 K