HBT sexualitet : -ur ett explorativt sociologiskt maktperspektiv

I denna uppsats har vi använt oss av ett sociologiskt maktperspektiv där vi explorativt har undersökt om HBT kan ses som ett fält där olika medlemmar/personer strider om makt, resurser och status inom fältet. Vidare har vi undersökt vilken betydelse organisering har inom fältet och om/hur detta påverkar identitetsskapandet hos människor med en HBT sexualitet. Begreppet HBT står för homosexuella, bisexuella och transpersoner. Homosexualitet och bisexualitet är båda sexuella läggningar. Ordet transpersoner handlar om könsidentitet och könsuttryck och är ett paraplybegrepp till vad som innefattas av transexuella och intersexuella personer.Våra teman som vi har arbetat utefter är; könsnormen som uttryck för makt och disciplinering, biologi eller social konstruktion, fältet och dess innehåll: kapital och habitus samt makt i form av resurser, kontexter och diskurser. Vi har även utformat en hypotes och mothypotes utifrån vår egna förförståelse och hur vi tror att makten ser ut inom HBT som grupp. Vi har i vår undersökning kommit fram till att HBT som grupp inte är jämställda inom gruppen, att makten skiljer sig åt mellan homo-, bi- och transpersoner, där den maskulina bögen premieras vilket vi kan se stämmer överrens med de patriarkala könsnormerna som genomsyrar HBT som grupp liksom samhället för övrigt. Eftersom att graden av organisering påverkas av möjligheterna till identifikation med varandra inom gruppen så tror vi att HBT som grupp inte är så starka som de utåt påvisar. Detta visas tydligt i de bisexuellas och transexuellas mindre möjligheter till makt och status inom gruppen. Vi anser att HBT gruppen kan ses som ett fält och inom detta fält förekommer strider om makt, kapital samt status, både inom gruppen och för normalisering i samhället.

Det som inte syns, finns inte : En kvalitativ studie om kunskap, heteronormativitet och diskriminering av HBT-personer på äldreboenden

Syftet var att studera vilka kunskaper enhetschefer och personal inom äldreomsorgen har om äldre personer med en annan sexuell läggning än den rådande heteronormativa. Syftet var även att förstå hur heteronormativitet ser ut inom äldreomsorgen samt att undersöka om diskriminering sker. I studien har en kvalitativ metod i form av fallstudie använts. Intervjuer med sex enhetschefer på äldreboenden har genomförts. Som teoretisk tolkningsram har heteronormativitet samt diskriminering använts. I studien framkommer att ett heteronormativt synsätt gentemot äldre heterosexuella, bisexuella och transpersoner (HBT-personer) finns samt att strukturell diskriminering råder. Enhetscheferna i studien har inte några specifika kunskaper om HBT-personer, deras livsstil, levnadsvillkor eller eventuell problem. Intervjupersonernas kunskap baseras på egna erfarenheter av HBT-personer i den privata sfären. Vidare framkommer att enhetscheferna anser att samhället är öppet för personer med en annan sexuell läggning än den rådande heteronormativa och av den anledningen behövs ingen vidare kunskap. I och med den öppna attityden i samhället menar enhetscheferna också att deras personal gör ett bra arbete med alla personer som bor på äldreboendena.

Efect of an educative action on relatives' knowledge about childhood burns at home

O objetivo deste trabalho foi avaliar o efeito de ação educativa sobre o conhecimento de familiares de crianças a respeito de queimaduras em ambiente doméstico. Participaram 40 familiares de crianças menores de quatro anos, divididos igualmente em grupos intervenção e controle. Foram realizadas entrevista inicial, ação educativa com folder de queimaduras e entrevista após uma semana. As respostas foram comparadas, utilizando-se teste estatístico de Fisher. Na primeira entrevista, registrou-se 60 respostas de situações de risco no grupo controle e 62 no grupo intervenção; na segunda, aumentou para 61 e 80 indicações, respectivamente. Na primeira entrevista, 90% dos participantes do grupo controle e 80% do grupo intervenção verbalizaram acreditar que a queimadura infantil pode ser evitada; na segunda, a indicação diminuiu para 84% e aumentou para 100%, respectivamente. Este estudo mostrou a importância da orientação com folder de queimaduras em ambiente doméstico.

HBT interferometry: historical perspective

I review the history of HBT interferometry, since its discovery in the mid 1950's, up to the recent developments and results from BNL/RHIC experiments. I focus the discussion on the contributions to the subject given by members of our Brazilian group.

Possible origin of RHIC Rout/Rsid HBT results

The effects of opacity of the nuclei together with a blackbody type of emission along the system history are considered as a means to explain the ratio Rout/Rsid observed by STAR and PHENIX collaborations at RHIC. Within our model, no flow is required to explain the data trend of this ratio for large surface emissivities. © 2003 Elsevier Science B.V. All rights reserved.

Diseño de un amplificador distribuido para ultra wide band basado en HBT de la tecnología SIGE 0.35 μm de AMS

Memoria y presentación del Proyecto Fin de Carrera titulado "DISEÑO DE UN AMPLIFICADOR DISTRIBUIDO PARA ULTRA WIDE BAND BASADO EN HBT DE LA TECNOLOGÍA SIGE 0.35 μm DE AMS"

Responsiveness and habituation of soluble icam-1 to acute psychosocial stress in men: determinants and efect of stress-hemoconcentration

We studied the psychophysiology of soluble intercellular adhesion molecule-1 (sICAM-1) in 25 apparently healthy middle-aged men who underwent an acute psychosocial stressor three times with one week apart. Measures of the biological stress response were obtained at week one and three. The magnitude of the sICAM-1 stress response showed no habituation between visits. At week one, cognitive stress appraisal independently predicted integrated sICAM-1 area under the curve (AUC) between rest, immediately post-stress, and 45 min and 105 min post-stress (beta=.67, p=.012, deltaR(2)=.41). Diastolic blood pressure AUC (beta=-.45, p=.048, deltaR(2)=.21) and heart rate (AUC) (beta=.44, p=.055, deltaR(2)=.21) were independent predictors of sICAM-1 (AUC) at week three. Adjustment for hemoconcentration yielded a decrease in sICAM-1 levels from rest to post-stress (p<.001). Stress responsiveness of plasma sICAM-1 was predicted by stress perception and hemodynamic reactivity and affected by stress-hemoconcentration but unrelated to cortisol reactivity and not readily adapting to stress repeats.

Effect of concentrated force on a Crack in dissimilar media

Efect of concentrated force or edge dislocation with Burger's vector on a line crack in di,aimilar media has been studied in this paper. Crack surfaces may be subjected to surface loads or opuwd by rigid inclusions. Complex variable methods have been employed to study the distribution of stresses and displacements every where and in particnlar at the tips of the crack.

Estudio de medios de cultivos, explantes, frascos y sustratos en cladodio de pitahaya (Hylocereus undatus Britton et Rose) cv. chocoya de Nicaragua en fase de micropropagacion

Se estudiaron las fases de multiplicación, enraizamiento, aclimatización y el trasplante en el cultivo de pitahaya ( Hylocereus undatus Britton et Rose ) cultivar Chocoya . El ensayo se desarrolló en 4 fases: Fase 1: Multiplicación. 1a) Efecto de 9 medios de cultivo (dosis de BAP y sacarosa) y tipo de explantes (apical, central y basal). 1b) Efecto en crecimiento de tres tipos de explantes (apical, central y basal), número de explantes (5, 6 y 7 explantes/frasco) y volumen del frasco (220 y 430 ml). Fase 2: Enraizamiento. Efect o de 9 medios de cultivo , consistencia de medios de cultivo (líquida y semisólida) con explantes centrales. Fase 3: Aclimatización. Establecimiento de plántulas provenientes de la fase de enraizamiento con do s tipos de sustrato (compost y lombrihumus). Fase 4: Trasplante. Trasplante al campo de plantas provenientes de la fase de aclimatización segmentando el cladodio en 3 partes. Los ensayos fueron esta blecidos sobre diseños factoriales apropiados, y se utilizó Duncan - Waller ( Pr =0.05) como criterio de separación de promedios en las variables de cladodios, raíces, sobrevivencia, número de brotes, entre otras. En los medios de cultivo que contenían 1 mg l - 1 de BAP con 30 ó 40 g/l de sacarosa, resultó mejor el número de brotes emitidos por segmentos apicales de la vaina. En los tratamientos segmento central en frasco de 220 ml y 430 ml y segmento apical en frasco de 430 ml, el número de brotes fue mayor en t odos ellos con 5 y 6 tejidos por frasco. El promedio de raíces por cladodio fue de 3.32 en el medio de cultivo que contenía 30g/l de sacarosa, sin adición de AIA y de consistencia sólida. La aclimatación en el sustrato compost el promedio de longitud, núme ro de raíces y el porcentaje de sobrevivencia fue mejor cuando las plantas habían enraizado previamente en un medio de cultivo con 0.5 mg l - 1 de AIA y 60 g/l de sacarosa y en sustrato de lombrihumus la aclimatación fue mejor con plantas previamente enraizad as en el medio de cultivo con 0.5 mg/l de AIA y 30 g/l de sacarosa. En el trasplante, el segmento apical de la vaina presentó una mayor longitud (14.56 cm), la longitud de los brotes axilares fue superior en los segmentos centrales (2.46 cm). En todos los tratamientos no hubo muerte de los cladodios enraizados

A study of frequency response in silicon heterojunction bipolar transistors with amorphous silicon emitters

A detailed physical model of amorphous silicon (aSi:H) is incorporated into a twodimensional device simulator to examine the frequency response limits of silicon heterojunction bipolar transistors (HBT's) with aSi:H emitters. The cutoff frequency is severely limited by the transit time in the emitter space charge region, due to the low electron drift mobility in aSi:H, to 98 MHz which compares poorly with the 37 GHz obtained for a silicon homojunction bipolar transistor with the same device structure. The effects of the amorphous heteroemitter material parameters (doping, electron drift mobility, defect density and interface state density) on frequency response are then examined to find the requirements for an amorphous heteroemitter material such that the HBT has better frequency response than the equivalent homojunction bipolar transistor. We find that an electron drift mobility of at least 100 cnr'V"'"1 is required in the amorphous heteroemitter and at a heteroemitter drift mobility of 350 cm2 · V1· s1 and heteroemitter doping of 5×1017 cm3, a maximum cutoff frequency of 52 GHz can be expected. © 1996 IEEE.

Degree of fourth-order coherence by double Hanbury Brown-Twiss detections

Photon quantum statistics of light can be shown by the high-order coherence. The fourth-order coherences of various quantum states including Pock states, coherent states, thermal states and squeezed vacuum states are investigated based on a double Banbury Brown Twiss (HBT) scheme. The analytical results are obtained by taking the overall efficiency and background into account.

A new phototransistor with uni-travelling-carrier and optically gradual coupling properties

Based on appropriate combination of different band-gap InGaAsP, a new edge-coupled two-terminal double heterojunction phototransistor (ECTT-DHPT) was designed and fabricated, which is double heterojunction, free-aluminium, and works under uni-travelling-carrier mode and optically gradual coupling mode. This device is fully compatible with monolithic micro-wave integrated circuits (MMIC) and heterojunction bipolar transistor (HBT) in material and process. The DC characteristics reveal that the new ECTT-DHPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52 A/W and dark current of 70 nA (when V-EC = 1 V) were obtained.

Electrically Driven InAs Quantum-Dot Single-Photon Sources

Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AlGaAs/GaAs distributed Bragg reflector (DBR) and a surface GaAs-air interface. The device is characterized by I-V curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. Hanbury Brown and Twiss (HBT) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80K

A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-linger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10 V and the collector-base junction breakdown voltage BVCBO is 16 V with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. The device exhibited a maximum oscillation frequency f(max) of 35.5 GHz and a cut-off frequency f(T) of 24.9 GHz at a dc bias point of I-C = 70 mA and the voltage between collector and emitter is V-CE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0 dBm to 21 dBm. A maximum output power of 29.9 dBm (about 977 mW) is obtained at an input power of 18.5 dBm with a gain of 11.47 dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, f(max) and f(T) are improved by about 83.9% and 38.3%, respectively.