应变异质结外延材料的缓冲层厚度与Frank-Read源的关系研究

基于能量最小近似模型,研究了应变异质结外延材料中,产生Frank-Read源以释放失配应力所需GeSi合金缓冲层的厚度。对Ge_xSi_(1-x)/Si进行了具体计算,其结果表明:产生Frank-Read源时缓冲层厚度要比临界厚度大得多,L_(min)=1300A是钉扎点间的最小距离。计算结果与LeGoues等的实验结果相符。就作者所知,计算产生Frank-Read源时GeSi合金缓冲层厚度的工作,以前未见报道。

Lonely voices of the south: exploring the transnational dialogue of Flannery O'Connor and Frank O'Connor

Accepted Version

Theoretical considerations of electrochemical phase formation for an ideal Frank-van der Merwe system - Ag on Au(111) and Au(100)

: Static calculation and preliminary kinetic Monte Carlo simulation studies are undertaken for the nucleation and growth on a model system which follows a Frank-van der Merwe mechanism. In the present case, we consider the deposition of Ag on Au(100) and Au(111) surfaces. The interactions were calculated using the embedded atom model. The kinetics of formation and growth of 2D Ag structures on Au(100) and Au(111) is investigated and the influence of surface steps on this phenomenon is studied. Very different time scales are predicted for Ag diffusion on Au(100) and Au(111), thus rendering very different regimes for the nucleation and growth of the related 2D phases. These observations are drawn from the application of a model free of any adjustable parameter.