937 resultados para CMOS sensors
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This paper presents a CMOS temperature sensor based on the thermal dependencies of the leakage currents targeting the 65 nm node. To compensate for the effect of process fluctuations, the proposed sensor realizes the ratio of two measures of the time it takes a capacitor to discharge through a transistor in the subthreshold regime. Furthermore, a novel charging mechanism for the capacitor is proposed to further increase the robustness against fabrication variability. The sensor, including digitization and interfacing, occupies 0.0016 mm2 and has an energy consumption of 47.7–633 pJ per sample. The resolution of the sensor is 0.28 °C, and the 3σ inaccuracy over the range 40–110 °C is 1.17 °C.
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Total Ionization Dose (TID) is traditionally measured by radiation sensitive FETs (RADFETs) that require a radiation hardened Analog-to-Digital Converter (ADC) stage. This work introduces a TID sensor based on a delay path whose propagation time is sensitive to the absorbed radiation. It presents the following advantages: it is a digital sensor able to be integrated in CMOS circuits and programmable systems such as FPGAs; it has a configurable sensitivity that allows to use this device for radiation doses ranging from very low to relatively high levels; its interface helps to integrate this sensor in a multidisciplinary sensor network; it is self-timed, hence it does not need a clock signal that can degrade its accuracy. The sensor has been prototyped in a 0.35μm technology, has an area of 0.047mm2, of which 22% is dedicated to measuring radiation, and an energy per conversion of 463pJ. Experimental irradiation tests have validated the correct response of the proposed TID sensor.
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El gran crecimiento de los sistemas MEMS (Micro Electro Mechanical Systems) así como su presencia en la mayoría de los dispositivos que usamos diariamente despertó nuestro interés. Paralelamente, la tecnología CMOS (Complementary Metal Oxide Semiconductor) es la tecnología más utilizada para la fabricación de circuitos integrados. Además de ventajas relacionadas con el funcionamiento electrónico del dispositivo final, la integración de sistemas MEMS en la tecnología CMOS reduce significantemente los costes de fabricación. Algunos de los dispositivos MEMS con mayor variedad de aplicaciones son los microflejes. Estos dispositivos pueden ser utilizados para la extracción de energía, en microscopios de fuerza atómica o en sensores, como por ejemplo, para biodetección. Los materiales piezoeléctricos más comúnmente utilizados en aplicaciones MEMS se sintetizan a altas temperaturas y por lo tanto no son compatibles con la tecnología CMOS. En nuestro caso hemos usado nitruro de alumino (AlN), que se deposita a temperatura ambiente y es compatible con la tecnología CMOS. Además, es biocompatible, y por tanto podría formar parte de un dispositivo que actúe como biosensor. A lo largo de esta tesis hemos prestado especial atención en desarrollar un proceso de fabricación rápido, reproducible y de bajo coste. Para ello, todos los pasos de fabricación han sido minuciosamente optimizados. Los parámetros de sputtering para depositar el AlN, las distintas técnicas y recetas de ataque, los materiales que actúan como electrodos o las capas sacrificiales para liberar los flejes son algunos de los factores clave estudiados en este trabajo. Una vez que la fabricación de los microflejes de AlN ha sido optimizada, fueron medidos para caracterizar sus propiedades piezoeléctricas y finalmente verificar positivamente su viabilidad como dispositivos piezoeléctricos. ABSTRACT The huge growth of MEMS (Micro Electro Mechanical Systems) as well as their presence in most of our daily used devices aroused our interest on them. At the same time, CMOS (Complementary Metal Oxide Semiconductor) technology is the most popular technology for integrated circuits. In addition to advantages related with the electronics operation of the final device, the integration of MEMS with CMOS technology reduces the manufacturing costs significantly. Some of the MEMS devices with a wider variety of applications are the microcantilevers. These devices can be used for energy harvesting, in an atomic force microscopes or as sensors, as for example, for biodetection. Most of the piezoelectric materials used for these MEMS applications are synthesized at high temperature and consequently are not compatible with CMOS technology. In our case we have used aluminum nitride (AlN), which is deposited at room temperature and hence fully compatible with CMOS technology. Otherwise, it is biocompatible and and can be used to compose a biosensing device. During this thesis work we have specially focused our attention in developing a high throughput, reproducible and low cost fabrication process. All the manufacturing process steps of have been thoroughly optimized in order to achieve this goal. Sputtering parameters to synthesize AlN, different techniques and etching recipes, electrode material and sacrificial layers are some of the key factors studied in this work to develop the manufacturing process. Once the AlN microcantilevers fabrication was optimized, they were measured to characterize their piezoelectric properties and to successfully check their viability as piezoelectric devices.
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This paper briefly reviews CMOS image sensor technology and its utilization in security and medical applications. The role and future trends of image sensors in each of the applications are discussed. To provide the reader deeper understanding of the technology aspects the paper concentrates on the selected applications such as surveillance, biometrics, capsule endoscopy and artificial retina. The reasons for concentrating on these applications are due to their importance in our daily life and because they present leading-edge applications for imaging systems research and development. In addition, review of image sensors implementation in these applications allows the reader to investigate image sensor technology from the technical and from other views as well.
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Die vorliegende Arbeit untersucht die Integrierbarkeit von Photodioden und zugehörigen Signalvorverarbeitungen mit dem preisgünstigen Standard-0,5-µm-Prozess bzw. 0,35-µm-CMOS-Prozess. Als Pilotanwendung wurde die Realisierung eines flexiblen Ortfrequenzfilters vorgesehen, der durch die Verschaltung und die Wichtung von integrierten Photodioden gebildet wird. Mit einem integrierten optoelektronischen Bauteil (Opto-ASIC) sollte die Funktionaliät eines CORREVIT®-Sensors (der Firma Corrsys 3D Sensors) aus Prismengitter, Feldlinse, Photodioden und Vorverstärker nachgebildet und seine Funktionalität erweitert werden. Dazu sollte dieser Opto-ASIC eine Photodiodenzeile enthalten, die im Unterschied zu dem bestehenden CORREVIT®-Sensor durch die programmierbare Verschaltung und die Wichtung der Signale der Photodioden unterschiedliche Ortsfrequenz-Bandpassfilter erzeugen sollte, um unterschiedliche Gitterkonstanten (Ortsfrequenzen) zur optimalen Anpassung des Sensors an die jeweilige Oberfläche realisieren zu können. Neue Ortsfrequenzfilter können mehrere Fehlereinflüsse handelsüblicher Sensoren größtenteils vermeiden. Dazu sollten die Filter symmetrisch sein und die Summen ihrer Wichtungen sollten zu Null werden. Die Photodioden als Elementarbauteile der Ortsfilter werden genau untersucht und optimiert, da die Eigenschaften der Photodioden die Qualität der Messsignale stark beeinflussen. Mit einem neuen entwickelten Messverfahren lässt sich die lokale Empfindlichekeit auf dem ASIC mit einer Auflösung ab 0,5 µm messen. Durch diese Messungen konnte die optimale Geometrie festgelegt werden. Es konnte gezeigt werden, dass die Empfindlichkeit der Photodioden in den Randbereichen (lateraler Bereich) erheblich höher ist als im Tiefenbereich (vertikaler Bereich). Es wurde deshalb vorgeschlagen, die Photodioden, die dann abhängig von der Struktur als Fingerdiode oder geschlitzte Diode bezeichnet wurden, in viele Teilflächen zu unterteilen. Zur Realisierung des Ortsfrequenzfilters wurde ein Schaltungssystem zur Signalverarbeitung und Verschaltung der Photodioden entwickelt. Dieser Schaltkreis setzt sich aus Transimpedanzverstärker, Diffenzverstärker, Schalter und einem Schieberegister zusammen.
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Power electronic circuits are moving towards higher switching frequencies, exploiting the capabilities of novel devices to shrink the dimension of passive components. This trend demands sensors capable enough to operate at such high frequencies. This thesis aims to demonstrate through experimental characterization, the broadband capability of a fully integrated CMOS X-Hall current sensor in current mode interfaced with a transimpedance amplifier (TIA), chip CH09, realized in CMOS technology for power electronics applications such as power converters. The system exploits a common-mode control system to operate the dual supply system, 5-V for the X-Hall probe and 1.2-V for the readout. The developed prototype achieves a maximum acquisition bandwidth of 12 MHz, a power consumption of 11.46 mW, resolution of 39 mArms, a sensitivity of 8 % /T, and a FoM of 569-MHz/A2mW, significantly higher than current state-of-the-art. Further enhancements were proposed to CH09 as a new chip CH100, aiming for accuracy levels prerequisite for a real-time power electronic application. The TIA was optimized for a wider bandwidth of 26.7 MHz with nearly 30% reduction of the integrated input referred noise of 26.69 nArms at the probe-AFE interface in the frequency band of DC-30 MHz, and a 10% improvement in the dynamic range. The expected input range is 5-A. The chip incorporates a dual sensing chain for differential sensing to overcome common mode interferences. A novel offset cancellation technique is proposed that would require switching of polarity of bias currents. Thermal gain drift was improved by a factor of 8 and will be digitally calibrated utilizing a new built-in temperature sensor with a post calibration measurement accuracy greater than 1%. The estimated power consumption of the entire system is 55.6 mW. Both prototypes have been implemented through a 90-nm microelectronic process from STMicroelectronics and occupy a silicon area of 2.4 mm2.
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Using a combination of density functional theory and recursive Green's functions techniques, we present a full description of a large scale sensor, accounting for disorder and different coverages. Here, we use this method to demonstrate the functionality of nitrogen-rich carbon nanotubes as ammonia sensors as an example. We show how the molecules one wishes to detect bind to the most relevant defects on the nanotube, describe how these interactions lead to changes in the electronic transport properties of each isolated defect, and demonstrate that there are significative resistance changes even in the presence of disorder, elucidating how a realistic nanosensor works.
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The combination of metallic phthalocyanines (MPcs) and biomolecules has been explored in the literature either as mimetic systems to investigate molecular interactions or as supporting layers to immobilize biomolecules. Here, Langmuir-Blodgett (LB) films containing the phospholipid dimyristoyl phosphatidic acid (DMPA) mixed either with iron phthalocyanine (FePc) or with lutetium bisphthalocyanine (LuPc(2)) were applied as ITO modified-electrodes in the detection of catechol using cyclic voltammetry. The mixed Langmuir films of FePc + DMPA and LuPc(2) + DMPA displayed surface-pressure isotherms with no evidence of molecular-level interactions. The Fourier Transform Infrared (FTIR) spectra of the multilayer LB films confirmed the lack of interaction between the components. The DMPA and the FePc molecules were found to be oriented perpendicularly to the substrate, while LuPc(2) molecules were randomly organized. The phospholipid matrix induced a remarkable electrocatalytic effect on the phthalocyanines; as a result the mixed LB films deposited on ITO could be used to detect catechol with detection limits of 4.30 x 10(-7) and 3.34 x 10(-7) M for FePc + DMPA and LuPc(2) + DMPA, respectively. Results from kinetics experiments revealed that ion diffusion dominated the response of the modified electrodes. The sensitivity was comparable to that of other non-enzymatic sensors, which is sufficient to detect catechol in the food industry. The higher stability of the electrochemical response of the LB films and the ability to control the molecular architecture are promising for further studies with incorporation of biomolecules.
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Magnetic AFM probes known as MAClevers (R) were employed for sensing picogram amounts of magnetic nanoparticles, based on the cantilever frequency shifts resulting from the magnetically induced adsorption of mass. By using organothiol functionalized magnetic nanoparticles, this analytical strategy was successfully extended to the detection of gold nanoparticles, as confirmed by confocal Raman microscopy.
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This paper presents a small-area CMOS current-steering segmented digital-to-analog converter (DAC) design intended for RF transmitters in 2.45 GHz Bluetooth applications. The current-source design strategy is based on an iterative scheme whose variables are adjusted in a simple way, minimizing the area and the power consumption, and meeting the design specifications. A theoretical analysis of static-dynamic requirements and a new layout strategy to attain a small-area current-steering DAC are included. The DAC was designed and implemented in 0.35 mu m CMOS technology, requiring an active area of just 200 mu m x 200 mu m. Experimental results, with a full-scale output current of 700 mu A and a 3.3 V power supply, showed a spurious-free dynamic range of 58 dB for a 1 MHz output sine wave and sampling frequency of 50 MHz, with differential and integral nonlinearity of 0.3 and 0.37 LSB, respectively.
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Modal filters may be obtained by a properly designed weighted sum of the output signals of an array of sensors distributed on the host structure. Although several research groups have been interested in techniques for designing and implementing modal filters based on a given array of sensors, the effect of the array topology on the effectiveness of the modal filter has received much less attention. In particular, it is known that some parameters, such as size, shape and location of a sensor, are very important in determining the observability of a vibration mode. Hence, this paper presents a methodology for the topological optimization of an array of sensors in order to maximize the effectiveness of a set of selected modal filters. This is done using a genetic algorithm optimization technique for the selection of 12 piezoceramic sensors from an array of 36 piezoceramic sensors regularly distributed on an aluminum plate, which maximize the filtering performance, over a given frequency range, of a set of modal filters, each one aiming to isolate one of the first vibration modes. The vectors of the weighting coefficients for each modal filter are evaluated using QR decomposition of the complex frequency response function matrix. Results show that the array topology is not very important for lower frequencies but it greatly affects the filter effectiveness for higher frequencies. Therefore, it is possible to improve the effectiveness and frequency range of a set of modal filters by optimizing the topology of an array of sensors. Indeed, using 12 properly located piezoceramic sensors bonded on an aluminum plate it is shown that the frequency range of a set of modal filters may be enlarged by 25-50%.
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This work extends a previously presented refined sandwich beam finite element (FE) model to vibration analysis, including dynamic piezoelectric actuation and sensing. The mechanical model is a refinement of the classical sandwich theory (CST), for which the core is modelled with a third-order shear deformation theory (TSDT). The FE model is developed considering, through the beam length, electrically: constant voltage for piezoelectric layers and quadratic third-order variable of the electric potential in the core, while meclianically: linear axial displacement, quadratic bending rotation of the core and cubic transverse displacement of the sandwich beam. Despite the refinement of mechanical and electric behaviours of the piezoelectric core, the model leads to the same number of degrees of freedom as the previous CST one due to a two-step static condensation of the internal dof (bending rotation and core electric potential third-order variable). The results obtained with the proposed FE model are compared to available numerical, analytical and experimental ones. Results confirm that the TSDT and the induced cubic electric potential yield an extra stiffness to the sandwich beam. (C) 2007 Elsevier Ltd. All rights reserved.
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Void fraction sensors are important instruments not only for monitoring two-phase flow, but for furnishing an important parameter for obtaining flow map pattern and two-phase flow heat transfer coefficient as well. This work presents the experimental results obtained with the analysis of two axially spaced multiple-electrode impedance sensors tested in an upward air-water two-phase flow in a vertical tube for void fraction measurements. An electronic circuit was developed for signal generation and post-treatment of each sensor signal. By phase shifting the electrodes supplying the signal, it was possible to establish a rotating electric field sweeping across the test section. The fundamental principle of using a multiple-electrode configuration is based on reducing signal sensitivity to the non-uniform cross-section void fraction distribution problem. Static calibration curves were obtained for both sensors, and dynamic signal analyses for bubbly, slug, and turbulent churn flows were carried out. Flow parameters such as Taylor bubble velocity and length were obtained by using cross-correlation techniques. As an application of the void fraction tested, vertical flow pattern identification could be established by using the probability density function technique for void fractions ranging from 0% to nearly 70%.
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Sensors and actuators based on piezoelectric plates have shown increasing demand in the field of smart structures, including the development of actuators for cooling and fluid-pumping applications and transducers for novel energy-harvesting devices. This project involves the development of a topology optimization formulation for dynamic design of piezoelectric laminated plates aiming at piezoelectric sensors, actuators and energy-harvesting applications. It distributes piezoelectric material over a metallic plate in order to achieve a desired dynamic behavior with specified resonance frequencies, modes, and enhanced electromechanical coupling factor (EMCC). The finite element employs a piezoelectric plate based on the MITC formulation, which is reliable, efficient and avoids the shear locking problem. The topology optimization formulation is based on the PEMAP-P model combined with the RAMP model, where the design variables are the pseudo-densities that describe the amount of piezoelectric material at each finite element and its polarization sign. The design problem formulated aims at designing simultaneously an eigenshape, i.e., maximizing and minimizing vibration amplitudes at certain points of the structure in a given eigenmode, while tuning the eigenvalue to a desired value and also maximizing its EMCC, so that the energy conversion is maximized for that mode. The optimization problem is solved by using sequential linear programming. Through this formulation, a design with enhancing energy conversion in the low-frequency spectrum is obtained, by minimizing a set of first eigenvalues, enhancing their corresponding eigenshapes while maximizing their EMCCs, which can be considered an approach to the design of energy-harvesting devices. The implementation of the topology optimization algorithm and some results are presented to illustrate the method.
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We investigate the effect of coexisting transverse modes on the operation of self-mixing sensors based on vertical-cavity surface-emitting lasers (VCSELs). The effect of multiple transverse modes on the measurement of displacement and distance were examined by simulation and in laboratory experiment. The simulation model shows that the periodic change in the shape and magnitude of the self-mixing signal with modulation current can be properly explained by the different frequency-modulation coefficients of the respective transverse modes in VCSELs. The simulation results are in excellent agreement with measurements performed on single-mode and multimode VCSELs and on self-mixing sensors based on these VCSELs.