988 resultados para CHARGE-TRANSPORT


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Organic electronics is an emerging field with a vast number of applications having high potential for commercial success. Although an enormous progress has been made in this research area, many organic electronic applications such as organic opto-electronic devices, organic field effect transistors and organic bioelectronic devices still require further optimization to fulfill the requirements for successful commercialization. The main bottle neck that hinders large scale production of these devices is their performances and stability. The performance of the organic devices largely depends on the charge transport processes occurring at the interfaces of various material that it is composed of. As a result, the key ingredient needed for a successful improvement in the performance and stability of organic electronic devices is an in-depth knowledge of the interfacial interactions and the charge transport phenomena taking place at different interfaces. The aim of this thesis is to address the role of the various interfaces between different material in determining the charge transport properties of organic devices. In this framework, I chose an Organic Field Effect Transistor (OFET) as a model system to carry out this study as it An OFET offers various interfaces that can be investigated as it is made up of stacked layers of various material. In order to probe the intrinsic properties that governs the charge transport, we have to be able to carry out thorough investigation of the interactions taking place down at the accumulation layer thickness. However, since organic materials are highly instable in ambient conditions, it becomes quite impossible to investigate the intrinsic properties of the material without the influence of extrinsic factors like air, moisture and light. For this reason, I have employed a technique called the in situ real-time electrical characterization technique which enables electrical characterization of the OFET during the growth of the semiconductor.

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Die vorliegende Dissertation dient dazu, das Verständnis des Ladungstransportes in organischen Solarzellen zu vertiefen. Mit Hilfe von Computersimulationen wird die Bewegung von Ladungsträgern in organischen Materialien rekonstruiert, und zwar ausgehend von den quantenmechanischen Prozessen auf mikroskopischer Ebene bis hin zur makroskopischen Skala, wo Ladungsträgermobilitäten quantifizierbar werden. Auf Grundlage dieses skalenübergreifenden Ansatzes werden Beziehungen zwischen der chemischen Struktur organischer Moleküle und der makroskopischen Mobilität hergestellt (Struktur-Eigenschafts-Beziehungen), die zu der Optimierung photovoltaischer Wirkungsgrade beitragen. Das Simulationsmodell beinhaltet folgende drei Schlüsselkomponenten. Erstens eine Morphologie, d. h. ein atomistisch aufgelöstes Modell der molekularen Anordnung in dem untersuchten Material. Zweitens ein Hüpfmodell des Ladungstransportes, das Ladungswanderung als eine Abfolge von Ladungstransferreaktionen zwischen einzelnen Molekülen beschreibt. Drittens ein nichtadiabatisches Modell des Ladungstransfers, das Übergangsraten durch drei Parameter ausdrückt: Reorganisationsenergien, Lageenergien und Transferintegrale. Die Ladungstransport-Simulationen richten sich auf die Materialklasse der dicyanovinyl-substituierten Oligothiophene und umfassen Morphologien von Einkristallen, Dünnschichten sowie amorphen/smektischen Mesophasen. Ein allgemeiner Befund ist, dass die molekulare Architektur, bestehend aus einer Akzeptor-Donor-Akzeptor-Sequenz und einem flexiblen Oligomergerüst, eine erhebliche Variation molekularer Dipolmomente und damit der Lageenergien bewirkt. Diese energetische Unordnung ist ungewöhnlich hoch in den Kristallen und umso höher in den Mesophasen. Für die Einkristalle wird beobachtet, dass Kristallstrukturen mit ausgeprägter π-Stapelung und entsprechend großer Transferintegrale zu verhältnismäßig niedrigen Mobilitäten führen. Dieses Verhalten wird zurückgeführt auf die Ausbildung bevorzugter Transportrichtungen, die anfällig für energetische Störungen sind. Für die Dünnschichten bestätigt sich diese Argumentation und liefert ein mikroskopisches Verständnis für experimentelle Mobilitäten. In der Tat korrelieren die Simulationsergebnisse sowohl mit gemessenen Mobilitäten als auch mit photovoltaischen Wirkungsgraden. Für die amorphen/smektischen Systeme steigt die energetische Unordnung mit der Oligomerlänge, sie führt aber auch zu einer unerwarteten Mobilitätsabnahme in dem stärker geordneten smektischen Zustand. Als Ursache dafür erweist sich, dass die smektische Schichtung der räumlichen Korrelation der energetischen Unordnung entgegensteht.

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The physics of the operation of singe-electron tunneling devices (SEDs) and singe-electron tunneling transistors (SETs), especially of those with multiple nanometer-sized islands, has remained poorly understood in spite of some intensive experimental and theoretical research. This computational study examines the current-voltage (IV) characteristics of multi-island single-electron devices using a newly developed multi-island transport simulator (MITS) that is based on semi-classical tunneling theory and kinetic Monte Carlo simulation. The dependence of device characteristics on physical device parameters is explored, and the physical mechanisms that lead to the Coulomb blockade (CB) and Coulomb staircase (CS) characteristics are proposed. Simulations using MITS demonstrate that the overall IV characteristics in a device with a random distribution of islands are a result of a complex interplay among those factors that affect the tunneling rates that are fixed a priori (e.g. island sizes, island separations, temperature, gate bias, etc.), and the evolving charge state of the system, which changes as the source-drain bias (VSD) is changed. With increasing VSD, a multi-island device has to overcome multiple discrete energy barriers (up-steps) before it reaches the threshold voltage (Vth). Beyond Vth, current flow is rate-limited by slow junctions, which leads to the CS structures in the IV characteristic. Each step in the CS is characterized by a unique distribution of island charges with an associated distribution of tunneling probabilities. MITS simulation studies done on one-dimensional (1D) disordered chains show that longer chains are better suited for switching applications as Vth increases with increasing chain length. They are also able to retain CS structures at higher temperatures better than shorter chains. In sufficiently disordered 2D systems, we demonstrate that there may exist a dominant conducting path (DCP) for conduction, which makes the 2D device behave as a quasi-1D device. The existence of a DCP is sensitive to the device structure, but is robust with respect to changes in temperature, gate bias, and VSD. A side gate in 1D and 2D systems can effectively control Vth. We argue that devices with smaller island sizes and narrower junctions may be better suited for practical applications, especially at room temperature.

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Single molecular junction conductances of a family of five symmetric and two unsymmetric perylene tetracarboxylic bisimides (PBI) with variable bay-area substituents were studied employing a scanning tunneling microscope (STM)-based break junction technique. The stretching experiments provide clear evidence for the formation of single molecular junctions and π–π stacked dimers. Electrolyte gating demonstrates a distinct gating effect in symmetric molecular junctions, which strongly depends on molecular structure and properties of the solvent/electrolyte. Weak π–π-coupling in the unsymmetric dimers prevents rectification.

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The conductance properties of a photoswitchable dimethyldihydropyrene (DHP) derivative have been investigated for the first time in single-molecule junctions using the mechanically controllable break junction technique. We demonstrate that the reversible structure changes induced by isomerization of a single bispyridine-substituted DHP molecule are correlated with a large drop of the conductance value. We found a very high ON/OFF ratio (>104) and an excellent reversibility of conductance switching.

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Perylene bisimides (PBIs) are n-type semiconducting and photogenerating materials widely used in a variety of optoelectronic devices. Particularly interesting are PBIs that are simultaneously water-soluble and liquid-crystalline (PBI-W+LC) and, thus, attractive for the development of high-performing easily processable applications in biology and “green” organic electronics. In this work, singular temperatures connected to charge transport mechanism transitions in a PBI-W+LC derivative are determined with high accuracy by means of temperature-dependent photocurrent studies. These singular temperatures include not only the ones observed at 60 and 110 °C, corresponding to phase transition temperatures from crystalline to liquid-crystalline (LC) and from LC to the isotropic phase, respectively, as confirmed by differential scanning calorimetry (DSC), but also a transition at 45 °C, not observed by DSC. By analyzing the photocurrent dependence simultaneously on temperature and on light intensity, this transition is interpreted as a change from monomolecular to bimolecular recombination. These results might be useful for other semiconducting photogenerating materials, not necessarily PBIs or even organic semiconductors, which also show transport behavior changes at singular temperatures not connected with structural or phase transitions.

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We describe a quantum electromechanical system comprising a single quantum dot harmonically bound between two electrodes and facilitating a tunneling current between them. An example of such a system is a fullerene molecule between two metal electrodes [Park et al., Nature 407, 57 (2000)]. The description is based on a quantum master equation for the density operator of the electronic and vibrational degrees of freedom and thus incorporates the dynamics of both diagonal (population) and off diagonal (coherence) terms. We derive coupled equations of motion for the electron occupation number of the dot and the vibrational degrees of freedom, including damping of the vibration and thermo-mechanical noise. This dynamical description is related to observable features of the system including the stationary current as a function of bias voltage

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Charge transport and dielectric measurements were carried out on compacted powder and single-crystal samples of bistable RbxMn[Fe(CN)6]y·zH2O in the two valence-tautomeric forms (MnIIFeIII and MnIIIFeII) as a function of temperature (120-350 K) and frequency (10-2-106 Hz). The complex conductivity data reveal universal conductivity behavior and obey the Barton-Nakajima-Namikawa relationship. The charge transport is accompanied by dielectric relaxation that displays the same thermal activation energy as the conductivity. Surprisingly, the activation energy of the conductivity was found very similar in the two valence-tautomeric forms (0.55 eV), and the conductivity change between the two phases is governed mainly by the variation of the preexponential factor in each sample. The phase transition is accompanied by a large thermal hysteresis of the conductivity and the dielectric constant. In the hysteresis region, however, a crossover occurs in the charge transport mechanism at T < 220 K from an Arrhenius-type to a varying activation energy behavior, conferring an unusual “double-loop” shape to the hysteresis.

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A new glass-forming organic semiconductor material was synthesized using a known electron transport material, perylene diimide, and attaching it to a molecular glass in order to allow the material to be solution processed. Devices were made using a simple metal-semiconductor-metal structure and electrodes were selected to produce Schottky diodes. Experiments were carried out to characterize this new molecular glass perylene diimide. The new material shows evidence of traps, hysteresis, and other behaviours that are explored in this thesis. The material shows some potential as an electron transport layer with possibilities of memory storage behaviour.