A Numerical method for the semilinear stochastic transport equation

Trabalho apresentado no XXXV CNMAC, Natal-RN, 2014.

Computer simulation of the stochastic transport equation

Trabalho apresentado no 37th Conference on Stochastic Processes and their Applications - July 28 - August 01, 2014 -Universidad de Buenos Aires

Combining anisotropic diffusion, transport equation and texture synthesis for inpainting textured images

In this work we propose a new image inpainting technique that combines texture synthesis, anisotropic diffusion, transport equation and a new sampling mechanism designed to alleviate the computational burden of the inpainting process. Given an image to be inpainted, anisotropic diffusion is initially applied to generate a cartoon image. A block-based inpainting approach is then applied so that to combine the cartoon image and a measure based on transport equation that dictates the priority on which pixels are filled. A sampling region is then defined dynamically so as to hold the propagation of the edges towards image structures while avoiding unnecessary searches during the completion process. Finally, a cartoon-based metric is computed to measure likeness between target and candidate blocks. Experimental results and comparisons against existing techniques attest the good performance and flexibility of our technique when dealing with real and synthetic images. © 2013 Elsevier B.V. All rights reserved.

The development of a numerical solution to transport equation /

"Prepared for U.S. Army Engineer District, Mobile."

Methods in Monte Carlo solution of the radiation transport equation /

"UNC-5014 (Volume A) Final Report covering the period 20 March 1961 - 31 May 1962."

Simple theoretical analysis of the Einstein's photoemission from quantum confined superlattices

In this paper, we study the Einstein's photoemission from III-V, II-VI, IV-VI and HgTe/CdTe quantum well superlattices (QWSLs) with graded interfaces and quantum well effective mass superlattices in the presence of a quantizing magnetic field on the basis of newly formulated dispersion relations in the respective cases. Besides, the same has been studied from the afore-mentioned quantum dot superlattices and it appears that the photoemission oscillates with increasing carrier degeneracy and quantizing magnetic field in different manners. In addition, the photoemission oscillates with film thickness and increasing photon energy in quantum steps together with the fact that the solution of the Boltzmann transport equation will introduce new physical ideas and new experimental findings under different external conditions. The influence of band structure is apparent from all the figures and we have suggested three applications of the analyses of this paper in the fields of superlattices and microstructures.

Tuning the electronic effective mass in double-doped SrTiO3

We elucidate the relationship between effective mass and carrier concentration in an oxide semiconductor controlled by a double-doping mechanism. In this model oxide system, Sr1-xLaxTiO3-delta, we can tune the effective mass ranging from 6 to 20m(e) as a function of filling (carrier concentration) and the scattering mechanism, which are dependent on the chosen lanthanum-and oxygen-vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr1-xLaxTiO3-delta. We show that the effective mass decreases with carrier concentration in this large-band-gap, low-mobility oxide, and this behavior is contrary to the traditional high-mobility, small-effective-mass semiconductors.

A model for scattering due to interface roughness in finite quantum wells

A model for scattering due to interface roughness in finite quantum wells (QWs) is developed within the framework of the Boltzmann transport equation and a simple and explicit expression between mobility limited by interface roughness scattering and barrier height is obtained. The main advantage of our model is that it does not involve complicated wavefunction calculations, and thus it is convenient for predicting the mobility in thin finite QWs. It is found that the mobility limited by interface roughness is one order of amplitude higher than the results derived by assuming an infinite barrier, for finite barrier height QWs where x = 0.3. The mobility first decreases and then flattens out as the barrier confinement increases. The experimental results may be explained with monolayers of asperity height 1-2, and a correlation length of about 33 angstrom. The calculation results are in excellent agreement with the experimental data from AlxGa1-xAs/GaAs QWs.

Comparison of SRIM, MCNPX and GEANT simulations with experimental data for thick Al absorbers

Proton computerized tomography deals with relatively thick targets like the human head or trunk. In this case precise analytical calculation of the proton final energy is a rather complicated task, thus the Monte Carlo simulation stands out as a solution. We used the GEANT4.8.2 code to calculate the proton final energy spectra after passing a thick Al absorber and compared it with the same conditions of the experimental data. The ICRU49, Ziegler85 and Ziegler2000 models from the low energy extension pack were used. The results were also compared with the SRIM2008 and MCNPX2.4 simulations, and with solutions of the Boltzmann transport equation in the Fokker-Planck approximation. (C) 2009 Elsevier Ltd. All rights reserved.

Simulação de perfis nucleares de poço em formações complexas

A identificação e descrição dos caracteres litológicos de uma formação são indispensáveis à avaliação de formações complexas. Com este objetivo, tem sido sistematicamente usada a combinação de ferramentas nucleares em poços não-revestidos. Os perfis resultantes podem ser considerados como a interação entre duas fases distintas: • Fase de transporte da radiação desde a fonte até um ou mais detectores, através da formação. • Fase de detecção, que consiste na coleção da radiação, sua transformação em pulsos de corrente e, finalmente, na distribuição espectral destes pulsos. Visto que a presença do detector não afeta fortemente o resultado do transporte da radiação, cada fase pode ser simulada independentemente uma da outra, o que permite introduzir um novo tipo de modelamento que desacopla as duas fases. Neste trabalho, a resposta final é simulada combinando soluções numéricas do transporte com uma biblioteca de funções resposta do detector, para diferentes energias incidentes e para cada arranjo específico de fontes e detectores. O transporte da radiação é calculado através do algoritmo de elementos finitos (FEM), na forma de fluxo escalar 2½-D, proveniente da solução numérica da aproximação de difusão para multigrupos da equação de transporte de Boltzmann, no espaço de fase, dita aproximação P₁, onde a variável direção é expandida em termos dos polinômios ortogonais de Legendre. Isto determina a redução da dimensionalidade do problema, tornando-o mais compatível com o algoritmo FEM, onde o fluxo dependa exclusivamente da variável espacial e das propriedades físicas da formação. A função resposta do detector NaI(Tl) é obtida independentemente pelo método Monte Carlo (MC) em que a reconstrução da vida de uma partícula dentro do cristal cintilador é feita simulando, interação por interação, a posição, direção e energia das diferentes partículas, com a ajuda de números aleatórios aos quais estão associados leis de probabilidades adequadas. Os possíveis tipos de interação (Rayleigh, Efeito fotoelétrico, Compton e Produção de pares) são determinados similarmente. Completa-se a simulação quando as funções resposta do detector são convolvidas com o fluxo escalar, produzindo como resposta final, o espectro de altura de pulso do sistema modelado. Neste espectro serão selecionados conjuntos de canais denominados janelas de detecção. As taxas de contagens em cada janela apresentam dependências diferenciadas sobre a densidade eletrônica e a fitologia. Isto permite utilizar a combinação dessas janelas na determinação da densidade e do fator de absorção fotoelétrico das formações. De acordo com a metodologia desenvolvida, os perfis, tanto em modelos de camadas espessas quanto finas, puderam ser simulados. O desempenho do método foi testado em formações complexas, principalmente naquelas em que a presença de minerais de argila, feldspato e mica, produziram efeitos consideráveis capazes de perturbar a resposta final das ferramentas. Os resultados mostraram que as formações com densidade entre 1.8 e 4.0 g/cm³ e fatores de absorção fotoelétrico no intervalo de 1.5 a 5 barns/e^-, tiveram seus caracteres físicos e litológicos perfeitamente identificados. As concentrações de Potássio, Urânio e Tório, puderam ser obtidas com a introdução de um novo sistema de calibração, capaz de corrigir os efeitos devidos à influência de altas variâncias e de correlações negativas, observadas principalmente no cálculo das concentrações em massa de Urânio e Potássio. Na simulação da resposta da sonda CNL, utilizando o algoritmo de regressão polinomial de Tittle, foi verificado que, devido à resolução vertical limitada por ela apresentada, as camadas com espessuras inferiores ao espaçamento fonte - detector mais distante tiveram os valores de porosidade aparente medidos erroneamente. Isto deve-se ao fato do algoritmo de Tittle aplicar-se exclusivamente a camadas espessas. Em virtude desse erro, foi desenvolvido um método que leva em conta um fator de contribuição determinado pela área relativa de cada camada dentro da zona de máxima informação. Assim, a porosidade de cada ponto em subsuperfície pôde ser determinada convolvendo estes fatores com os índices de porosidade locais, porém supondo cada camada suficientemente espessa a fim de adequar-se ao algoritmo de Tittle. Por fim, as limitações adicionais impostas pela presença de minerais perturbadores, foram resolvidas supondo a formação como que composta por um mineral base totalmente saturada com água, sendo os componentes restantes considerados perturbações sobre este caso base. Estes resultados permitem calcular perfis sintéticos de poço, que poderão ser utilizados em esquemas de inversão com o objetivo de obter uma avaliação quantitativa mais detalhada de formações complexas.

Investigation of acceptor dopants in ZrNiSn half-Heusler materials

Thermoelectric generators (TEG) are solid state devices and are able to convert thermal energy directly into electricity and thus could play an important role in waste heat recovery in the near future. Half-Heusler (HH) compounds with the general formula MNiSn (M = Ti, Zr, Hf) built a promising class of materials for these applications because of their high Seebeck coefficients, their environmentally friendliness and their cost advantage over conventional thermoelectric materials.rnrnMuch of the existing literature on HH deals with thermoelectric characterization of n-type MNiSn and p-type MCoSb compounds. Studies on p-type MNiSn-based HHs are far fewer in number. To fabricate high efficient thermoelectric modules based on HH compounds, high performance p-type MNiSn systems need to be developed that are compatible with the existing n-type HH compounds. This thesis explores synthesis strategies for p-type MNiSn based compounds. In particular, the efficacy of transition metals (Sc, La) and main group elements (Al, Ga, In) as acceptor dopants on the Sn-site in ZrNiSn, was investigated by evaluating their thermoelectric performance. The most promising p-type materials could be achieved with transition metal dopants, where the introduction of Sc on the Zr side, yielded the highest Seebeck coefficient in a ternary NiSn-based HH compound up to this date. Hall effect and band gap measurements of this system showed, that the high mobility of minority carrier electrons dominate the transport properties at temperatures above 500 K. It could be shown that this is the reason, why n-type HH are successful TE materials for high temperature applications, and that p-types are subjected to bipolar effects which will lead to diminished thermoelectric efficiencies at high temperatures.rnrnTo complement the experimental investigations on different metal dopants and their influence on the TE properties of HH compounds, numerical solutions to the Boltzmann transport equation were used to predict the optimum carrier concentration where the maximum TE efficiency occurs for p-type HH compounds. The results for p-type samples showed that can not be treated within a simple parabolic band model approach, due to bipolar and multi-band effects.rnrnThe parabolic band model is commonly used for bulk TE materials. It is most accurate when the transport properties are dominated by one single carrier type. Since the transport properties of n-type HH are dominated by only one carrier type (high mobility electrons), it could be shown, that the use of a simple parabolic band model lead to a successful prediction of the optimized carrier concentration and thermoelectric efficiency in n-type HH compounds. rn

First-principles calculation of carrier-phonon scattering in n-type Si1−xGex alloys

First-principles electronic structure methods are used to find the rates of inelastic intravalley and intervalley n-type carrier scattering in Si1-xGex alloys. Scattering parameters for all relevant Delta and L intra- and intervalley scattering are calculated. The short-wavelength acoustic and the optical phonon modes in the alloy are computed using the random mass approximation, with interatomic forces calculated in the virtual crystal approximation using density functional perturbation theory. Optical phonon and intervalley scattering matrix elements are calculated from these modes of the disordered alloy. It is found that alloy disorder has only a small effect on the overall inelastic intervalley scattering rate at room temperature. Intravalley acoustic scattering rates are calculated within the deformation potential approximation. The acoustic deformation potentials are found directly and the range of validity of the deformation potential approximation verified in long-wavelength frozen phonon calculations. Details of the calculation of elastic alloy scattering rates presented in an earlier paper are also given. Elastic alloy disorder scattering is found to dominate over inelastic scattering, except for almost pure silicon (x approximate to 0) or almost pure germanium (x approximate to 1), where acoustic phonon scattering is predominant. The n-type carrier mobility, calculated from the total (elastic plus inelastic) scattering rate, using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys..

First-principles calculation of P-type alloy scattering in Si1-xGex

The p-type carrier scattering rate due to alloy disorder in Si1-xGex alloys is obtained from first principles. The required alloy scattering matrix elements are calculated from the energy splitting of the valence bands, which arise when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Alloy scattering within the valence bands is found to be characterized by a single scattering parameter. The hole mobility is calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation. The results are in good agreement with experiments on bulk, unstrained alloys..

First-principles calculation of alloy scattering in GexSi1-x

First-principles electronic structure methods are used to find the rates of intravalley and intervalley n-type carrier scattering due to alloy disorder in Si1-xGex alloys. The required alloy scattering matrix elements are calculated from the energy splitting of nearly degenerate Bloch states which arises when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Scattering parameters for all relevant Delta and L intravalley and intervalley alloy scattering are calculated. Atomic relaxation is found to have a substantial effect on the scattering parameters. f-type intervalley scattering between Delta valleys is found to be comparable to other scattering channels. The n-type carrier mobility, calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys.

Transport processes in one component plasmas using Landau equation

A system of transport equations have been obtained for plasma of electrons and having a background of positive ions in the presence of an electric and magnetic field. The starting kinetic equation is the well-known Landau kinetic equation. The distribution function of the kinetic equation has been expanded in powers of generalized Hermite polynomials and following Grad, a consistent set of transport equations have been obtained. The expressions for viscosity and heat conductivity have been deduced from the transport equation.