Elementos finitos em fluidos dominados pelo fenômeno de advecção: um método semi-Lagrangeano.

Os escoamentos altamente convectivos representam um desafio na simulação pelo método de elementos finitos. Com a solução de elementos finitos de Galerkin para escoamentos incompressíveis, a matriz associada ao termo convectivo é não simétrica, e portanto, a propiedade de aproximação ótima é perdida. Na prática as soluções apresentam oscilações espúrias. Muitos métodos foram desenvolvidos com o fim de resolver esse problema. Neste trabalho apresentamos um método semi- Lagrangeano, o qual é implicitamente um método do tipo upwind, que portanto resolve o problema anterior, e comparamos o desempenho do método na solução das equações de convecção-difusão e Navier-Stokes incompressível com o Streamline Upwind Petrov Galerkin (SUPG), um método estabilizador de reconhecido desempenho. No SUPG, as funções de forma e de teste são tomadas em espaços diferentes, criando um efeito tal que as oscilações espúrias são drasticamente atenuadas. O método semi-Lagrangeano é um método de fator de integração, no qual o fator é um operador de convecção que se desloca para um sistema de coordenadas móveis no fluido, mas restabelece o sistema de coordenadas Lagrangeanas depois de cada passo de tempo. Isto prevê estabilidade e a possibilidade de utilizar passos de tempo maiores.Existem muitos trabalhos na literatura analisando métodos estabilizadores, mas não assim com o método semi-Lagrangeano, o que representa a contribuição principal deste trabalho: reconhecer as virtudes e as fraquezas do método semi-Lagrangeano em escoamentos dominados pelo fenômeno de convecção.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

Design and optimization of photonic crystal coupling layer for bi-color quantum well infrared photodetectors

Finite difference time domain (FDTD) method is used for the simulation and analysis of electromagnetic field in the top coupling layer of GaAs/AlGaAs quantum well infrared photodetector (QWIP). Simulation results demonstrated the coupling efficiencies and distributions of electromagnetic (EM) field in a variety of 2D photonic crystal coupling layer structures. A photonic crystal structure for bi-color-QWIP is demonstrated with high coupling efficiency for two wavelengths.

Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well

Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily doped InGaAs/InAlAs quantum well by using variable temperature Hall measurement. The energy gap of symmetric and antisymmetric states is estimated to be 4meV from the analysis of beating node positions. In addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure.

A novel extremely broadband superluminescent diode based on symmetric graded tensile-strained bulk InGaAs

A novel broadband superluminescent diode (SLD), which has a symmetric graded tensile-strained bulk InGaAs active region, is developed. The symmetric-graded tensile-strained bulk InGaAs is achieved by changing the group III TMGa source flow only during its growth process by low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE), in which the much different tensile strain is introduced simultaneously. At 200mA injection current, the full width at half maximum (FWHM) of the emission spectrum of the SLID can be up to 122nm, covering the range of 1508-1630nm, and the output power is 11.5mW.

Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field

Suppression of the exciton recombination in GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum well (CQW) induced by an external magnetic field is investigated theoretically. Unlike the usual electro-Stark effect, the exciton energy dispersion of an exciton is modified by an external in-plane magnetic field, the ground state of the magnetoexciton shifts from a zero in-plane center of mass (CM) momentum to a finite CM momentum, and the Lorentz force induces the spatial separation of electron and hole. Consequently, this effect renders the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. This effect depends sensitively on the thickness and height of GaAs0.7Sb0.3 layer, therefore it could provide us useful infometion about the band alignment of CQW. (C) 2004 American Institute of Physics.

Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect

Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k(3) Dresselhaus effect. The spin-dependent transmission of an electron can be obtained analytically. By comparing with previous work [Phys. Rev. B 67, 201304(R) (2003) and Phys. Rev. Lett. 93, 056601 (2004)], it is shown that the spin polarization and interface current are changed significantly by including the off-diagonal elements in the current operator, and can be enhanced considerably by the Dresselhaus effect in the contact regions.

Enhancement of stimulated emission in 12-fold symmetric quasi-crystals

In this paper, we investigate the stimulated emission in a 12-fold symmetric quasiperiodic photonic crystal. The stimulated emission peaks in the quasiperiodic photonic crystal are more abundant and stronger than those in a periodic crystal. Also, more stimulated emission peaks appear as the crystal size and the gain increase, and some frequencies of the peaks are independent of the incident direction. These phenomena may be due to wave localization in the quasiperiodic photonic crystal.

In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells

Two sensitive polarized spectroscopies, reflectance difference spectroscopy and photocurrent difference spectroscopy, are used to study the characteristic of the in-plane optical anisotropy in the symmetric and the asymmetric (001) GaAs/Al(Ga)As superlattices (SLs). The anisotropy spectra of the symmetric and the asymmetric SLs show significant difference: for symmetric ones, the anisotropies of the 1HH-->1E transition (1H1E) and 1L1E are dominant, and they are always approximately equal and opposite; while for asymmetric ones, the anisotropy of 1H1E is much less than that of 1L1E and 2H1E, and the anisotropy of 3H2E is very strong. The calculated anisotropy spectra within the envelope function model agree with the experimental results, and a perturbation approach is used to understand the role of the electric field and the interface potential in the anisotropy. (C) 2001 American Institute of Physics.

Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction

We presented a series of symmetric double crystal X-ray diffraction (DCXD) measurements, (0 0 4), (2 2 0) and (2 - 2 0) diffraction, to investigate the strain relaxation in an InAs film grown on a GaAs(0 0 1) substrate. The strain tensor and rotation tensor were calculated according to the DCXD results. It is found that the misfit strain is relaxed nearly completely and the strain relaxation caused a triclinic deformation in the epilayer. The lattice parameter along the [1 1 0] direction is a little longer than that along the [1 - 1 0] direction. Furthermore, a significant tilt, 0.2 degrees, towards the [1 1 0] direction while a very slight one: 0.002 degrees, towards [1 - 1 0] direction were discussed. This anisotropic strain relaxation is attributed to the asymmetric distribution of misfit dislocations, which is also indicated by the variation of the full-width at half-maximum (FWHM) of (0 0 4) diffraction along four azimuth angles. (C) 1998 Elsevier Science B.V. All rights reserved.

Resonant subband Landau level coupling in symmetric quantum well

Subband structure and depolarization shifts in an ultrahigh mobility GaAs/Al0.24Ga0.76As quantum well are studied using magnetoinfrared spectroscopy via resonant subband Landau level coupling. Resonant couplings between the first and up to the fourth subbands are identified by well-separated antilevel-crossing split resonance, while the hy-lying subbands were identified by the cyclotron resonance linewidth broadening in the literature. In addition, a forbidden intersubband transition (first to third) has been observed. With the precise determination of the subband structure, we find that the depolarization shift can be well described by the semiclassical slab plasma model and the possible origins for the forbidden transition are discussed.

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N-(Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

Two closely coupled lasers, dynamics & applications

The dynamics of two mutually coupled identical single-mode semi-conductor lasers are theoretically investigated. For small separation and large coupling between the lasers, symmetry-broken one-colour states are shown to be stable. In this case the light output of the lasers have significantly different intensities whilst at the same time the lasers are locked to a single common frequency. For intermediate coupling we observe stable two-colour states, where both single-mode lasers lase simultaneously at two optical frequencies which are separated by up to 150 GHz. For low coupling but possibly large separation, the frequency of the relaxation oscillations of the freerunning lasers defines the dynamics. Chaotic and quasi-periodic states are identified and shown to be stable. For weak coupling undamped relaxation oscillations dominate where each laser is locked to three or more odd number of colours spaced by the relaxation oscillation frequency. It is shown that the instabilities that lead to these states are directly connected to the two colour mechanism where the change in the number of optical colours due to a change in the plane of oscillation. At initial coupling, in-phase and anti-phase one colour states are shown to emerge from “on” uncoupled lasers using a perturbation method. Similarly symmetry-broken one-colour states come from considering one free-running laser initially “on” and the other laser initially “off”. The mechanism that leads to a bi-stability between in-phase and anti-phase one-colour states is understood. Due to an equivariant phase space symmetry of being able to exchange the identical lasers, a symmetric and symmetry-broken variant of all states mentioned above exists and is shown to be stable. Using a five dimensional model we identify the bifurcation structure which is responsible for the appearance of symmetric and symmetry-broken one-colour, symmetric and symmetry-broken two-colour, symmetric and symmetry-broken undamped relaxation oscillations, symmetric and symmetry-broken quasi-periodic, and symmetric and symmetry-broken chaotic states. As symmetry-broken states always exist in pairs, they naturally give rise to bi-stability. Several of these states show multistabilities between symmetric and symmetry-broken variants and among states. Three memory elements on the basis of bi-stabilities in one and two colour states for two coupled single-mode lasers are proposed. The switching performance of selected designs of optical memory elements is studied numerically.