Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.

Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition

The very usual columnar growth of nanocrystalline silicon leads to electronic transport anisotropies. Whereas electrical measurements with coplanar electrodes only provide information about the electronic transport parallel to the substrate, it is the transverse transport which determines the collection efficiency in thin film solar cells. Hence, Schottky diodes on transparent electrodes were obtained by hot-wire CVD in order to perform external quantum efficiency and surface photovoltage studies in sandwich configuration. These measurements allowed to calculate a transverse collection length, which must correlate with the photovoltaic performance of thin film solar cells. Furthermore, the density of charge trapped at localized states in the bandgap was estimated from the voltage dependence of the depletion capacitance of these rectifying contacts.

Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC)

Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (μc-Si:H/a-Si:H) and μc-Si:H p-layer were used for the cell. In this paper, we report the characterization of these layers and the integration of these layers in a solar cell fabricated at low temperature. An initial efficiency of 4.62% has been achieved for the n-i-p cell deposited at temperatures below 150 °C over glass/Ag/ZnO textured back reflector.

Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD

Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H.

Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.

Thin Film Transistors obtained by Hot-Wire CVD

Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material.

Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition

Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance.

Desenvolvimento de um circuito eletrônico experimental de anemômetro de fio quente

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Hot wire manufacturing and resolution effects in high Reynolds number flows

Lo studio della turbolenza è di fondamentale importanza non solo per la fluidodinamica teorica ma anche perchè viene riscontrata in una moltitudine di problemi di interesse ingegneristico. All'aumentare del numero di Reynolds, le scale caratteristiche tendono a ridurre le loro dimensioni assolute. Nella fluidodinamica sperimentale già da lungo tempo si è affermata l'anemometria a filo caldo, grazie ad ottime caratteristiche di risoluzione spaziale e temporale. Questa tecnica, caratterizzata da un basso costo e da una relativa semplicità, rende possibile la realizzazione di sensori di tipo artigianale, che hanno il vantaggio di poter essere relizzati in dimensioni inferiori. Nonostante l'ottima risoluzione spaziale degli hot-wire, infatti, si può verificare, ad alto numero di Reynolds, che le dimensioni dell'elemento sensibile siano superiori a quelle delle piccole scale. Questo impedisce al sensore di risolvere correttamente le strutture più piccole. Per questa tesi di laurea è stato allestito un laboratorio per la costruzione di sensori a filo caldo con filo di platino. Sono in questo modo stati realizzati diversi sensori dalle dimensioni caratteristiche inferiori a quelle dei sensori disponibili commercialmente. I sensori ottenuti sono quindi stati testati in un getto turbolento, dapprima confrontandone la risposta con un sensore di tipo commerciale, per verificarne il corretto funzionamento. In seguito si sono eseguite misure più specifiche e limitate ad alcune particolari zone all'interno del campo di moto, dove è probabile riscontrare effetti di risoluzione spaziale. Sono stati analizzati gli effetti della dimensione fisica del sensore sui momenti statistici centrali, sugli spettri di velocità e sulle funzioni di densità di probabilità.

A numerical study of temperature effects on hot wire measurements inside turbulent channel flows

A way to investigate turbulence is through experiments where hot wire measurements are performed. Analysis of the in turbulence of a temperature gradient on hot wire measurements is the aim of this thesis work. Actually - to author's knowledge - this investigation is the first attempt to document, understand and ultimately correct the effect of temperature gradients on turbulence statistics. However a numerical approach is used since instantaneous temperature and streamwise velocity fields are required to evaluate this effect. A channel flow simulation at Re_tau = 180 is analyzed to make a first evaluation of the amount of error introduced by temperature gradient inside the domain. Hot wire data field is obtained processing the numerical flow field through the application of a proper version of the King's law, which connect voltage, velocity and temperature. A drift in mean streamwise velocity profile and rms is observed when temperature correction is performed by means of centerline temperature. A correct mean velocity pro�le is achieved correcting temperature through its mean value at each wall normal position, but a not negligible error is still present into rms. The key point to correct properly the sensed velocity from the hot wire is the knowledge of the instantaneous temperature field. For this purpose three correction methods are proposed. At the end a numerical simulation at Re_tau =590 is also evaluated in order to confirm the results discussed earlier.

Effetti della risoluzione spaziale nella stima della dissipazione con sensore hot-wire

L'obiettivo primario di questo elaborato di tesi è quello di stimare l'effetto della risoluzione spaziale e quindi della lunghezza finita del sensore di un anemometro a filo caldo, sul calcolo delle derivate che contribuiscono a valutare la dissipazione.

Hot-wire measurements with X-meters,

Photocopy.

Experimental study of a Tollmien-Schlichting wave interacting with a shallow 3D roughness element

The paper is devoted to an experimental study of the effect of a shallow 3D roughness element on the evolution of a 2D Tollmien-Schlichting wave in a Blasius boundary layer. The experiments were carried out under controlled disturbance conditions on an airfoil section which could provide a long run with zero pressure gradient flow. A pneumatically driven slit source was used to introduce the Tollmien-Schilichting wave upstream of the lower branch of the neutral stability curve. A few wavelengths downstream, the T-S wave interacts with a cylindrical roughness element. The height of the roughness was slowly oscillating in time, which allows a continuous measurement of the T-S wave response downstream the roughness. The oscillation frequency was approximately 1500 times lower than the frequency of the studied Tollmien-Schlichting wave and therefore, behaved as a steady roughness with respect to the T-S wave. Hot wire anemometry was used to measure wall normal profiles and spanwise scans close to the maximum of the eigenfunction of the T-S wave. The oscillation of the roughness and the synchronization of all-equipments permitted the use of ensemble average techniques. Two different amplitudes of T-S waves with a non-dimensional frequency of F120E-06 were studied. They show a strong amplification of the disturbances in a small spanwise wave number range. The analysis of the wall normal T-S profiles suggests the growth of oblique modes.

Characterization of turbulent jets from high-aspect-ratio rectangular nozzles

Turbulent free jets issuing from rectangular slots with various high aspect ratios (15-120) are characterized. The centerline mean and rms velocities are measured using hot-wire anemometry over a downstream distance of up to 160 slot heights at a slot-height-based Reynolds number of 10000. Experimental results suggest that a rectangular jet with sufficiently high aspect ratio (> 15) may be distinguished between three flow zones: an initial quasi-plane-jet zone, a transition zone, and a final quasi-axisymmetric-jet zone. In the quasi-plane-jet zone, the turbulent velocity field is statistically similar, but not identical, to those of a plane jet. (c) 2005 American Institute of Physics.

Analyse selbsterregter Strömungsfelder im Verdichter-Leitrad durch Kopplung von Particle Image Velocimetry und Hitzdrahtanemometrie mittels Fast Fourier Transformation

Der Einsatz der Particle Image Velocimetry (PIV) zur Analyse selbsterregter Strömungsphänomene und das dafür notwendige Auswerteverfahren werden in dieser Arbeit beschrieben. Zur Untersuchung von solchen Mechanismen, die in Turbo-Verdichtern als Rotierende Instabilitäten in Erscheinung treten, wird auf Datensätze zurückgegriffen, die anhand experimenteller Untersuchungen an einem ringförmigen Verdichter-Leitrad gewonnen wurden. Die Rotierenden Instabilitäten sind zeitabhängige Strömungsphänomene, die bei hohen aerodynamischen Belastungen in Verdichtergittern auftreten können. Aufgrund der fehlenden Phaseninformation kann diese instationäre Strömung mit konventionellen PIV-Systemen nicht erfasst werden. Die Kármánsche Wirbelstraße und Rotierende Instabilitäten stellen beide selbsterregte Strömungsvorgänge dar. Die Ähnlichkeit wird genutzt um die Funktionalität des Verfahrens anhand der Kármánschen Wirbelstraße nachzuweisen. Der mittels PIV zu visualisierende Wirbeltransport erfordert ein besonderes Verfahren, da ein externes Signal zur Festlegung des Phasenwinkels dieser selbsterregten Strömung nicht zur Verfügung steht. Die Methodik basiert auf der Kopplung der PIV-Technik mit der Hitzdrahtanemometrie. Die gleichzeitige Messung mittels einer zeitlich hochaufgelösten Hitzdraht-Messung ermöglicht den Zeitpunkten der PIV-Bilder einen Phasenwinkel zuzuordnen. Hierzu wird das Hitzdrahtsignal mit einem FFT-Verfahren analysiert, um die PIV-Bilder entsprechend ihrer Phasenwinkel zu gruppieren. Dafür werden die aufgenommenen Bilder auf der Zeitachse der Hitzdrahtmessungen markiert. Eine systematische Analyse des Hitzdrahtsignals in der Umgebung der PIV-Messung liefert Daten zur Festlegung der Grundfrequenz und erlaubt es, der markierten PIV-Position einen Phasenwinkel zuzuordnen. Die sich aus den PIV-Bildern einer Klasse ergebenden Geschwindigkeitskomponenten werden anschließend gemittelt. Aus den resultierenden Bildern jeder Klasse ergibt sich das zweidimensionale zeitabhängige Geschwindigkeitsfeld, in dem die Wirbelwanderung der Kármánschen Wirbelstraße ersichtlich wird. In hierauf aufbauenden Untersuchungen werden Zeitsignale aus Messungen in einem Verdichterringgitter analysiert. Dabei zeigt sich, dass zusätzlich Filterfunktionen erforderlich sind. Im Ergebnis wird schließlich deutlich, dass die Übertragung der anhand der Kármánschen Wirbelstraße entwickelten Methode nur teilweise gelingt und weitere Forschungsarbeiten erforderlich sind.