Solid-State Bipolar Marx Converter with Output Transformer and Energy Recovery

The purpose of this paper is to present and discuss a general HV topology of the solid-state Marx modulator, for unipolar or bipolar generation connected with a step-up transformer to increase the output voltage applied to a resistive load. Due to the use of an output transformer, discussion about the reset of the transformer is made to guarantee zero average voltage applied to the primary. It is also discussed the transformer magnetizing energy recovering back to the energy storage capacitors. Simulation results for a circuit that generates 100 kV pulses using 1000 V semiconductors are presented and discussed regarding the voltage and current stress on the semiconductors and result obtained.

Solid-State bipolar Marx modulator modeling

A mathematical model that simulates the operation of a solid-state bipolar Marx modulator topology, including the influence of parasitic capacitances is presented and discussed as a tool to analyze the circuit behavior and to assist the design engineer to select the semiconductor components and to enhance the operating performance. Simulations show good agreement with experimental results, considering a four stage circuit assembled with 1200 V isolated gate bipolar transistors and diodes, operating at 1000 V dc input voltage and 1-kHz frequency, giving 4 kV and 10-mu s output pulses into several resistive loads. Results show that parasitic capacitances between Marx cells to ground can significantly load the solid-state switches, adding new operating circuit conditions.

Marx-Type solid-state bipolar modulator topologies: Performance comparison

The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and switch hold-off voltages has been made. A circuit topology is obtained as a compromise in terms of operating performance, trigger simplicity, and switching losses. A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 mu s pulse width and 5 mu s relaxation time into resistive, capacitive, and inductive loads.

Characterization and simulation of a CdTe detector for use in PET

The Voxel Imaging PET (VIP) Path nder project got the 4 year European Research Council FP7 grant in 2010 to prove the feasibility of using CdTe detectors in a novel conceptual design of PET scanner. The work presented in this thesis is a part of the VIP project and consists of, on the one hand, the characterization of a CdTe detector in terms of energy resolution and coincidence time resolution and, on the other hand, the simulation of the setup with the single detector in order to extend the results to the full PET scanner. An energy resolution of 0.98% at 511 keV with a bias voltage of 1000 V/mm has been measured at low temperature T=-8 ºC. The coincidence time distribution of two twin detectors has been found to be as low as 6 ns FWHM for events with energies above 500 keV under the same temperature and bias conditions. The measured energy and time resolution values are compatible with similar ndings available in the literature and prove the excellent potential of CdTe for PET applications. This results have been presented in form of a poster contribution at the IEEE NSS/MIC & RTSD 2011 conference in October 2011 in Valencia and at the iWoRID 2012 conference in July 2012 in Coimbra, Portugal. They have been also submitted for publication to "Journal of Instrumentation (JINST)" in September 2012.

Haja-asutusalueen keskijänniteverkon kaapeloinnin ja automaation suunnittelumetodiikka

Tässä diplomityössä tutkitaan erilaisia keskijänniteverkon kehittämismenetelmiä sekä suunnittelua haja-asutusalueelle. Suunnittelumetodiikan perustana on vertailla sähköverkon käyttövarmuuden tunnuslukujen sekä kokonaiskustannusten kehittymistä erilaisilla investointiratkaisuilla. Lähemmässä tarkastelussa ovat erilaiset kaapelointimenetelmät sekä automaatiolaitteet kuten maastoon sijoitettavat katkaisijat sekä kauko-ohjattavat erottimet. Kehittämisratkaisujen vertailemiseksi sähköverkosta muodostetaan laskentaa varten malli, jonka avulla on mahdollista tarkastella mm. käyttövarmuuden tunnuslukujen sekä verkon kustannusten kehittymistä. Verkon kustannuksissa otetaan huomioon investointikustannukset, käyttö- ja kunnossapitokustannukset, viankorjauskustannukset sekä keskeytyskustannukset. Keskeytysten laskentaa varten toteutetaan erilliset laskentalohkot, jotta keskeytyskustannukset saadaan mallinnettua tarkasti. Kaapelointistrategia-analyysissä vertaillaan kaapeloinnin erilaisia toteuttamisperiaatteita. Erilaisia tutkittavia kaapelointimenetelmiä ovat vyörytysmenetelmä, vikaherkimpien kohteiden uusinta, vanhimpien kohteiden uusinta, täydellinen kaapelointi sekä optimiverkostoratkaisu, jossa on hyödynnetty keskijännitejohtojen kaapeloinnin lisäksi mm. automaatioratkaisuja ja 1000 V tekniikkaa. Kaapelointimenetelmiä vertailtaessa on havaittu, että vikaherkimmistä kohteista aloitettava saneeraus tuottaa parhaimman tuloksen, jos optimiratkaisua ei oteta huomioon.

High-voltage electrophoretic deposition of preferentially oriented films from multiferroic YMn2O5 nanopowders

Processing of the YMn2O5 powder is very challenging, since it decomposes to YMnO3 and Mn3O4 at temperatures close to 1180 °C, while samples consolidation commonly demands high temperatures. The main goal of this work is to investigate a possibility to prepare thick films of YMn2O5, since their deposition generally requires significantly lower temperatures. Multiferroic YMn 2O5 was synthesized by the hydrothermal method from Y(CH3COO)3·xH2O, Mn(CH 3COO)2·4H2O and KMnO4 precursors. XRD, FE-SEM and TEM analysis showed that the obtained powder was monophasic, with orthorhombic crystal structure and columnar particle shape with mean diameter and length of around 20 and 50 nm, respectively. The obtained powder was suspended in isopropyl alcohol with addition of appropriate binder and deflocculant. This suspension was used for electrophoretic deposition of YMn2O5 thick films under the high-voltage conditions and electric fields ranging from 250 to 2125 V/cm. The films obtained at 1000 V/cm and higher electric fields showed good adhesion, particle packing, homogeneity and very low porosity. It was shown that the deposition in extremely high electric fields (KC=2125 V/cm) can influence the crystal orientation of the films, resulting in formation of preferentially oriented films. © 2012 Elsevier Ltd and Techna Group S.r.l.

Dispositivo de microdescargas em gases na pressão atmosférica

This work describes the development of an electro-mechanical micro-discharges device operating at ambient condition of pressure and temperature, capable to produce plasma jets for surface finishing. The discharges are produced through a needle shape electrode hollow cathode type by which flows the helium gas. The voltage applied on the electrode is provided for an AC/AC switching voltage converter of full-bridge topology. The converter is energized by a power line of 110/220 VAC, 60 Hz and gives a 1000 V peak-to-peak from 5 kHz to 40 kHz square waveform output. The output frequency is defined by a control signal provided by an external signal generator. The equipment setup includes output acquisition of voltage and current and a photo-detector for photo-electrical measurements, which allows an optical characterization of the plasma jet

Dispositivo de microdescargas em gases na pressão atmosférica

This work describes the development of an electro-mechanical micro-discharges device operating at ambient condition of pressure and temperature, capable to produce plasma jets for surface finishing. The discharges are produced through a needle shape electrode hollow cathode type by which flows the helium gas. The voltage applied on the electrode is provided for an AC/AC switching voltage converter of full-bridge topology. The converter is energized by a power line of 110/220 VAC, 60 Hz and gives a 1000 V peak-to-peak from 5 kHz to 40 kHz square waveform output. The output frequency is defined by a control signal provided by an external signal generator. The equipment setup includes output acquisition of voltage and current and a photo-detector for photo-electrical measurements, which allows an optical characterization of the plasma jet

Die Mosesgruppe am Grabe des Kaisers und der Kaiserin Friedrich

C. V.

Zum Jubiläum der Cultusreform

-v.

Zum Jubiläum der Cultusreform

-v.

Panait Istrati: Michail [Rezension]

V.

Beiträge zur Entwicklungsgeschichte des Judentums, von ca. 400 v. Chr. bis ca. 1000 n. Chr.

von D. Chwolson

Isothermal Section of the V-Si-B System at 1600 A degrees C in the V-VSi(2)-VB Region

In recent years, the Me-Si-B (Me-metal) ternary systems have received considerable attention aiming at the development of high-temperature structural materials. Assuming that any real application of these materials will rely on multicomponent alloys, as is the case of Ni-base superalloys, phase equilibria data of these systems become very important. In this work, results are reported on phase equilibria in the V-Si-B system, and are summarized in the form of an isothermal section at 1600 A degrees C for the V-VSi(2)-VB region. Several alloys of different compositions were prepared via arc melting and then heat-treated at 1600 A degrees C under high vacuum. All the materials in both as-cast and heat-treated conditions were characterized through x-ray diffraction, scanning electron microscopy, and selected alloys via wavelength dispersive spectroscopy. A negligible solubility of B in the V(3)Si, V(5)Si(3) (T(1)), and V(6)Si(5) phases as well as of Si in V(3)B(2) and VB phases was noted. Two ternary phases presenting the structures known as T(2) (Cr(5)B(3)-prototype) and D8(8) (Mn(5)Si(3)-prototype) were observed in both as-cast and heat-treated samples. It is proposed that at 1600 A degrees C the homogeneity range of T(2) extends approximately from 5 at.% to 12 at.% Si at constant vanadium content and the composition of D8(8) phase is close to V(59.5)Si(33)B(7.5) (at.%).

Er : YAG laser, ultrasonic system, and curette produce different profiles on dentine root surfaces: An in vitro study

Objective: The aim of the present study was to compare the in vitro effects of the Er:YAG laser, an ultrasonic system, and manual curette on dentine root surface by roughness and micro-morphological analysis. Materials and Methods: Thirty-six flattened bovine roots were randomly assigned to one of the following groups: group 1 (n = 12): Er: YAG laser ( 2940 nm), 120 mJ/pulse, 10 Hz, 8.4 J/cm(2); group 2 ( n = 12): ultrasonic system; and group 3 ( n = 12): manual curette. The mean surface roughness (Ra) of each sample was measured using a profilometer before and after the treatments. The micro-morphology of the treated and untreated ( control) root surfaces was evaluated with scanning electron microscopy (SEM) at 50 x and 1000 x magnification. Results: Analysis with the profilometer showed that for equal times of instrumentation, the smoothest surfaces were produced by the Er: YAG laser and the ultrasonic system, followed by the curette ( p < 0.05). Morphological analyses demonstrated that treatment with the Er: YAG laser produced some areas with an irregular surface, craters, and ablation of the intertubular dentin. The smear layer was removed and dentine tubules were opened by both curettes and the ultrasonic system. The micro-morphology of the dentine root surface after ultrasonic treatment, however, demonstrated randomly distributed areas cratering. Conclusion: All instruments increased the roughness of the dentine root surface after treatment; however, the curette produced rougher surfaces than the other devices. SEM analysis revealed distinct root surface profiles produced by the three devices.