Fabricación y caracterización de wolframio nanoestructurado como material de primera pared en reactores de fusión nuclear

El trabajo que se llevará a cabo se basa en el desarrollo de nuevos materiales que sean capaces de resistir las condiciones extremas a las que estarían expuestos en el interior de un reactor de fusión nuclear, como son los altos choques térmicos y los altos flujos iónicos. Actualmente se está investigando en el potencial del wolframio nanoestructurado como material de primera pared (en inglés PFM: Plasma Facing Material). La principal ventaja de éste frente al wolframio masivo radica en su gran densidad de fronteras de grano que hacen que el material sea más resistente a la irradiación. El objetivo de este trabajo será la búsqueda de las condiciones óptimas para la fabricación de recubrimientos de wolframio nanoestructurado mediante la técnica de pulverización catódica ("sputtering") en diferentes configuraciones, continuo ("Direct Current Magnetron Sputtering" o DCMS) y/o pulsado ("High Power Impulse Magnetron Sputtering" o HiPIMS) y caracterizar sus propiedades como PFM mediante perfilometría, microscopía óptica, microscopía electrónica de barrido ("Scanning Electron Microscope" o SEM) y difracción de rayos X ("X-Ray Diffraction" o XRD). A su vez, se realizará un ensayo de implantación con un plasma pulsado de He para analizar los efectos de la irradiación en uno de los recubrimientos. Abstract: The work that will be carried out is based on the development of new materials capable of withstanding the extreme conditions that they will have to face inside a nuclear fusion reactor, such as high thermal loads and high ion fluxes. Currently, nanostructured tungsten potential is being investigated as a plasma facing material (PFM). The main advantage over coarse grain tungsten is its high density of grain boundaries which make the material more resistant to irradiation. The project´s main objective will be the search of the optimal conditions that will allow us to fabricate nanostructured tungsten thin films by using the sputtering technique in different configurations, such as DCMS (Direct Current Magnetron Sputtering) and/or HiPIMS (High Power Impulse Magetron Sputtering) and characterize their properties as a PFM by perfilometry, optical microscopy, SEM (Scanning Electron Microcopy) and XRD (X-Ray Diffracion) analysis. Moreover, an implantation test with a He pulsed plasma will be carried out to analyze the effects of irradiation on one of the coatings.

Processing of speech signals for physical and sensory disabilities.

Assistive technology involving voice communication is used primarily by people who are deaf, hard of hearing, or who have speech and/or language disabilities. It is also used to a lesser extent by people with visual or motor disabilities. A very wide range of devices has been developed for people with hearing loss. These devices can be categorized not only by the modality of stimulation [i.e., auditory, visual, tactile, or direct electrical stimulation of the auditory nerve (auditory-neural)] but also in terms of the degree of speech processing that is used. At least four such categories can be distinguished: assistive devices (a) that are not designed specifically for speech, (b) that take the average characteristics of speech into account, (c) that process articulatory or phonetic characteristics of speech, and (d) that embody some degree of automatic speech recognition. Assistive devices for people with speech and/or language disabilities typically involve some form of speech synthesis or symbol generation for severe forms of language disability. Speech synthesis is also used in text-to-speech systems for sightless persons. Other applications of assistive technology involving voice communication include voice control of wheelchairs and other devices for people with mobility disabilities.

Proteção de linhas de transmissão de sistemas VSC-HVDC utilizando limitadores de corrente de falta

Tecnologias HVDC que utilizam conversores do tipo fonte de tensão, o VSC-HVDC, ainda não são completamente difundidas e aplicadas no Brasil, em contraste com outros países que começaram a estudar e empregar este tipo de transmissão. Comparado com o HVDC tradicional, o VSC-HVDC é uma tecnologia de transmissão mais eficiente e pode superar deficiências encontradas na transmissão em corrente contínua convencional. O VSC-HVDC pode ser utilizado de maneira mais eficiente nas novas redes de energia, para alimentar ilhas, integração de geração eólica, renovação das linhas em centros urbanos, aplicações multiterminais e conexão com sistemas fracos. Por se tratar de uma tecnologia recente, o VSC-HVDC ainda não é amplamente adotado e uma das principais limitações da utilização destes sistemas é a sua fragilidade diante faltas na linha de corrente contínua. Neste contexto, limitadores de corrente de falta (LCF) podem ser utilizados para minimizar o impacto das faltas. A ação dos limitadores é benéfica ao sistema durante condições de falta, contudo, ainda assim é necessária a atuação do sistema de proteção para extinguir a condição faltosa. Portanto, este trabalho visa propor e avaliar um novo esquema de proteção que opere de maneira seletiva e confiável para sistemas VSC-HVDC na presença de LCF baseados em materiais supercondutores ou LCF indutivos. Para tanto, foram implementadas quatro funções de proteção tradicionais das linhas em CC, a saber: direcional de corrente, diferencial, sobrecorrente com restrição de tensão e ondas viajantes, e ainda, foi proposta uma nova função de proteção, a de condutância, a qual apresentou o menor tempo de identificação de falta, considerando as faltas mais severas. Adicionalmente, foi avaliado o comportamento destas funções quando o sistema apresenta os LCF em série com a linha. Foi demonstrado que é possível extrair os benefícios dos LCF sem deteriorar a qualidade dos resultados das funções de proteção, o que aumenta a segurança e confiabilidade dos sistemas VSC-HVDC, uma vez que os impactos das faltas são minimizados e as mesmas são identificadas em um curto intervalo de tempo.

Fundamentals of electronics.

"NAVPERS 93400 A."

Magnetic control of industrial motors /

Part 1. Alternating-current control devices and assemblies.--Part 2. Alternating-current controllers.--Part 3. Direct-current controllers.

Microstructure of MmM(5)/Mg multi-layer hydrogen storage films prepared by magnetron sputtering

Multi-layer hydrogen storage thin films with Mg and MmNi(3.5)(CoAlMn)(1.5) (here Mm denotes La-rich mischmetal) as alternative layers were prepared by direct current magnetron sputtering. Transmission electron microscopy investigation shows that the microstructure of the MmNi(3.5)(CoAlMn)(1.5) and Mg layers are significantly different although their deposition conditions are the same. The MmNi(3.5)(CoAlMn)(1.5) layer is composed of two regions: one is an amorphous region approximately 4 nm thick at the bottom of the layer and the other is a nanocrystalline region on top of the amorphous region. The Mg layer is also composed of two regions: one is a randomly orientated nanocrystalline region 50 nm thick at the bottom of the layer and the other is a columnar crystallite region on top of the nanocrystalline region. These Mg columnar crystallites have their [001] directions parallel to the growth direction and the average lateral size of these columnar crystallites is about 100 nm. A growth mechanism of the multi-layer thin films is discussed based on the experiment results. Wiley-Liss, Inc.

Microstructure of MmM(5)/Mg multi-layer films prepared by magnetron sputtering

Microstructure of MmNi(3.5)(CoAlMn)(1.5)/Mg (here Mm denotes La-rich mischmetal) multi-layer hydrogen storage thin films prepared by direct current magnetron sputtering was investigated by cross-sectional transmission electron microscopy (XTEM). It was shown that the MMM5 layers are composed of two regions: an amorphous region with a thickness of similar to 4nm at the bottom of the layers and a randomly orientated nanocrystallite region on the top of the amorphous region and the Mg layers consist of typical columnar crystallite with their [001] direction nearly parallel to the growth direction. The mechanism for the formation of the above microstructure characteristics in the multi-layer thin films has been proposed. Based on the microstructure feature of the multi-layer films, mechanism for the apparent improvement of hydrogen absorption/desorption kinetics was discussed. (c) 2005 Elsevier B.V. All rights reserved.

Two way power flow using GTO thyristors

Two-way power flow is nothing new and has been in practical use using line commutated converters for at least 50 years. With these types of converters, reversal of power flow can be achieved by increasing the firing angle of the devices beyond 90 degrees thus producing a negative DC voltage. Line commutated converters have several known disadvantages including: the direct current cannot be reversed, the power factor decreases when the firing angle increases and the harmonics are high on the line current. To tackle the above problems a forced commutated converter can be used. The power factor can be unity and the harmonics can be reduced. Many researchers have used PWM with different control techniques to serve the above purposes. In each converter arm, they used a forced commutated device with an antiparallel diode. Under the rectification mode of operation the current path is preponderantly through the diodes and under the inverter operation the current flows preponderantly through the forced commutated devices. Although their results were encouraging and gave a unity power factor with nearly sinusoidal current, the main disadvantage was that there were difficulties in controlling the power factor when the system is needed to operate at lagging or leading power factor. In this work, a new idea was introduced by connecting two GTOs antiparallel instead of a diode and a GTO. A single phase system using two GTO converters which are connected in series was built. One converter operates as a rectifier and the other converter operates as an inverter. In the case of the inversion mode and in each inverter arm one GTO is operated as a diode simply by switching it always on and the other antiparallel GTO is operated as a normal device to carry the inverter current. In case of the rectification mode, in each arm one GTO is always off and the other GTP is operated as a controlled device. The main advantage is that the system can be operated at lagging or leading power factor.

Fibre gratings in novel optical fibres for applications in sensing

This thesis presents the fabrication of fibre gratings in novel optical fibres for sensing applications. Long period gratings have been inscribed into photonic crystal fibre using the electric-arc technique. The resulting sensing characteristics were found to depend on the air-hole geometry of the particular fibre. This provides the potential of designing a fibre to have enhanced sensitivity to a particular measure and whilst removing unwanted cross sensitivities. Fibre Bragg gratings have been fabricated in a variety of polymer optical fibres, including microstructured polymer optical fibre, using a continuous wave helium cadmium laser. The thermal response of the gratings have been characterised and found to have enhanced sensitivity compared to fibre Bragg gratings in silica optical fibre. The increased sensitivity has been harnessed to achieve a grating based device in single mode step index polymer optical fibre by fabricating an electrically tunable fibre Bragg grating. This was accomplished by coating the grating region in a thin layer of copper, which upon application of a direct current, causes a temperature induced Bragg wavelength shift.