Investigation of competitive antagonist binding to the nicotinic acetylcholine receptor using voltage-jump and light-flash techniques

1. The effect of 2,2’-bis-[α-(trimethylammonium)methyl]azobenzene (2BQ), a photoisomerizable competitive antagonist, was studied at the nicotinic acetycholine receptor of Electrophorus electroplaques using voltage-jump and light-flash techniques.

2. 2BQ, at concentrations below 3 μΜ, reduced the amplitude of voltage-jump relaxations but had little effect on the voltage-jump relaxation time constants under all experimental conditions. At higher concentrations and voltages more negative than -150 mV, 2BQ caused significant open channel blockade.

3. Dose-ratio studies showed that the cis and trans isomers of 2BQ have equilibrium binding constants (K _ᵢ) of .33 and 1.0 μΜ, respectively. The binding constants determined for both isomers are independent of temperature, voltage, agonist concentration, and the nature of the agonist.

4. In a solution of predominantly cis-2BQ, visible-light flashes led to a net cis→trans isomerization and caused an increase in the agonist-induced current. This increase had at least two exponential components; the larger amplitude component had the same time constant as a subsequent voltage-jump relaxation; the smaller amplitude component was investigated using ultraviolet light flashes.

5. In a solution of predominantly trans-2BQ, UV-light flashes led to a net trans→cis isomerization and caused a net decrease in the agonist-induced current. This effect had at least two exponential components. The smaller and faster component was an increase in agonist-induced current and had a similar time constant to the voltage-jump relaxation. The larger component was a slow decrease in the agonist-induced current with rate constant approximately an order of magnitude less than that of the voltage-jump relaxation. This slow component provided a measure of the rate constant for dissociation of cis-2BQ (k_ = 60/s at 20°C). Simple modelling of the slope of the dose-rate curves yields an association rate constant of 1.6 x 10⁸/M/s. This agrees with the association rate constant of 1.8 x 10⁸/M/s estimated from the binding constant (K_i). The Q₁₀ of the dissociation rate constant of cis-2BQ was 3.3 between 6° and 20°C. The rate constants for association and dissociation of cis-28Q at receptors are independent of voltage, agonist concentration, and the nature of the agonist.

6. We have measured the molecular rate constants of a competitive antagonist which has roughly the same K _ᵢ as d-tubocurarine but interacts more slowly with the receptor. This leads to the conclusion that curare itself has an association rate constant of 4 x 10⁹/M/s or roughly as fast as possible for an encounter-limited reaction.

Study of crystal structure and phase transition studies in perovskite-type oxides using powder-diffraction techniques and symmetry-mode analysis.

251 p.

Manipulation of chromosomes in fish: review of various techniques and their implications in aquaculture

Human ingenuity has made it possible to advent the chromosome manipulation techniques to produce individuals with differing genomic status in a number of fish using various causal agents such as physical shocks (temperature or hydrostatic pressure), chemical (endomitotics) and anesthetic treatments either to suppress the second meiotic division shortly after fertilization of eggs or to prevent the first mitotic division shortly prior to mitotic cleavage formation. This results in the induction of polyploidy (triploidy and tetraploidy), gynogenesis (both meiotic and mitotic leading to clonal lines) and androgenesis in fish population. The rationale for the induction of such ploidy in fish has been its potential for generating sterile individuals, rapidly inbred lines and masculinized fish, which could be of benefit to fish farming and aquaculture. In this paper, these are critically reviewed and the implication of recently developed chromosome manipulation techniques to various fin fishes is discussed.

Production of triploid African catfish, Clarias gariepinus (Burchell), using chromosome manipulation techniques

An experiment was conducted to induce triploidy in African catfish, Clarias gariepinus, using heat shock and cold shock techniques. Cold shock at a temperature of 0± 1°C and 5±1°C for a duration of 15, 30, 45 and 60 min and heat shock at a temperature of 40±0.5°C and 41 ±OS C for a duration of 1, 2 and 3 min was given to induce triploidy 5 min after fertilization. Maximum percentage of triploids (91.4%) were obtained in the heat shock at a temperature of 40±0SC for a duration of 1 min whereas cold shock at 0± 1 C for a duration of 60 min yielded 90% of triploids. Chromosome analysis revealed that diploids have 54 chromosomes and triploids have 81 chromosomes. The erythrocyte measurements of the minor axis and major axis were 1.17 times larger in treated fish than in controls. The growth studies showed that the growth rate was not significantly affected in triploids.

Use of simple fat analysis for evaluating quality changes in intermediate moisture fish stored at tropical temperature

Changes in the quality of intermediate moisture (IM) fish during storage at 38°C were monitored by assessing the moisture content, pH, acid value, peroxide value and thiobarbituric acid (TBA) value periodically. Results adequately portrayed the hydrolysis and peroxidation of fats and the concomitant protein degradation and crosslinking reactions that have been shown by more sophisticated methods to occur in intermediate moisture fish. Since these changes markedly affect the organoleptic quality, acceptability/shelf-life and nutritive value of IM flesh-foods their predictability by simple fat analytical techniques is of practical value where/when the more sophisticated monitoring techniques are not feasible.

Measurements and calculations of transport AC loss in second generation high temperature superconducting pancake coils

Theoretical and experimental AC loss data on a superconducting pancake coil wound using second generation (2 G) conductors are presented. An anisotropic critical state model is used to calculate critical current and the AC losses of a superconducting pancake coil. In the coil there are two regions, the critical state region and the subcritical region. The model assumes that in the subcritical region the flux lines are parallel to the tape wide face. AC losses of the superconducting pancake coil are calculated using this model. Both calorimetric and electrical techniques were used to measure AC losses in the coil. The calorimetric method is based on measuring the boil-off rate of liquid nitrogen. The electric method used a compensation circuit to eliminate the inductive component to measure the loss voltage of the coil. The experimental results are consistent with the theoretical calculations thus validating the anisotropic critical state model for loss estimations in the superconducting pancake coil. © 2011 American Institute of Physics.

Modification of the trapped field in bulk high-temperature superconductors as a result of the drilling of a pattern of artificial columnar holes

The trapped magnetic field is examined in bulk high-temperature superconductors that are artificially drilled along their c-axis. The influence of the hole pattern on the magnetization is studied and compared by means of numerical models and Hall probe mapping techniques. To this aim, we consider two bulk YBCO samples with a rectangular cross-section that are drilled each by six holes arranged either on a rectangular lattice (sample I) or on a centered rectangular lattice (sample II). For the numerical analysis, three different models are considered for calculating the trapped flux: (i), a two-dimensional (2D) Bean model neglecting demagnetizing effects and flux creep, (ii), a 2D finite-element model neglecting demagnetizing effects but incorporating magnetic relaxation in the form of an E-J power law, and, (iii), a 3D finite element analysis that takes into account both the finite height of the sample and flux creep effects. For the experimental analysis, the trapped magnetic flux density is measured above the sample surface by Hall probe mapping performed before and after the drilling process. The maximum trapped flux density in the drilled samples is found to be smaller than that in the plain samples. The smallest magnetization drop is found for sample II, with the centered rectangular lattice. This result is confirmed by the numerical models. In each sample, the relative drops that are calculated independently with the three different models are in good agreement. As observed experimentally, the magnetization drop calculated in the sample II is the smallest one and its relative value is comparable to the measured one. By contrast, the measured magnetization drop in sample (1) is much larger than that predicted by the simulations, most likely because of a change of the microstructure during the drilling process.

Use of a high-temperature superconducting coil for magnetic energy storage

A high temperature superconducting magnetic energy storage device (SMES) has been realised using a 350 m-long BSCCO tape wound as a pancake coil. The coil is mounted on a cryocooler allowing temperatures down to 17.2 K to be achieved. The temperature dependence of coil electrical resistance R(T) shows a superconducting transition at T 102.5 K. Measurements of the V(I) characteristics were performed at several temperatures between 17.2 K and 101.5 K to obtain the temperature dependence of the critical current (using a 1 νV/cm criterion). Critical currents were found to exceed 100 A for T < 30 K. An electronic DC-DC converter was built in order to control the energy flow in and out of the superconducting coil. The converter consists of a MOS transistor bridge switching at a 80 kHz frequency and controlled with standard Pulse Width Modulation (PWM) techniques. The system was tested using a 30 V squared wave power supply as bridge input voltage. The coil current, the bridge input and output voltages were recorded simultaneously. Using a 10 A setpoint current in the superconducting coil, the whole system (coil + DC-DC converter) can provide a stable output voltage showing uninterruptible power supply (UPS) capabilities over 1 s. © 2006 IOP Publishing Ltd.

A low-cost CMOS programmable temperature

A novel uncalibrated CMOS programmable temperature switch with high temperature accuracy is presented. Its threshold temperature T-th can be programmed by adjusting the ratios of width and length of the transistors. The operating principles of the temperature switch circuit is theoretically explained. A floating gate neural MOS circuit is designed to compensate automatically the threshold temperature T-th variation that results form the process tolerance. The switch circuit is implemented in a standard 0.35 mu m CMOS process. The temperature switch can be programmed to perform the switch operation at 16 different threshold temperature T(th)s from 45-120 degrees C with a 5 degrees C increment. The measurement shows a good consistency in the threshold temperatures. The chip core area is 0.04 mm(2) and power consumption is 3.1 mu A at 3.3V power supply. The advantages of the temperature switch are low power consumption, the programmable threshold temperature and the controllable hysteresis.

Electron spin quantum beats and room temperature g factor in GaAsN

We report on the investigation of electron spin quantum beats at room temperature in GaAsN thin films by time-resolved Kerr rotation technique. The measurement of the quantum beats, which originate from the Larmor precession of electron spins in external transverse magnetic field, yields an accurate determination of the conduction electron g factor. We show that the g factor of GaAs1-xNx thin films is significantly changed by the introduction of a small nitrogen fraction.

Room-temperature continuous-wave electrically injected InP-GaInAsP equilateral-triangle-resonator lasers

Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are suitable to be a light source for photonic integrated circuits. InP-GaInAsP ETR lasers with side length from 10 to 30 pm and the output-waveguide width of 1 or 2 pm are fabricated using standard photolithography and inductively coupled-plasma etching techniques. Continuous-wave electrically injected 1520-nm ETR laser with 20-mu m sides is realized with the maximum output power 0.17 and 0.067 mW and the threshold current 34 and 43 mA at 290 K and 295 K, respectively.

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

A detailed characterisation study of GaN thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (ITBL) was carried out with Hall, photoluminescence (PL) and deep-level transient Fourier spectroscopy (DLTFS) techniques. The unique feature of our GaN thin films is that the GaN epitaxial layers are grown on top of a double layer that consists of an ITBL, which is grown at 690 degreesC, and a conventional low-temperature buffer layer deposited at 500 degreesC. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377 cm(2)V(-1)S(-1) for an ITBL thickness of 800 nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. The DLTFS results suggest a three-order-of-magnitude reduction in the deep level at E-c-0.40 eV in the device fabricated with the GaN films grown on an ITBL thickness of 1.25 mum in comparison with the control device without an ITBL. Our analyses indicate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films. (C) 2002 Elsevier Science BN. All rights reserved.

Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity and analyzes the optical characterization of cavity modes at room temperature. Single InAs/InGaAs quantum dots (QDs) layer was embedded in a GaAs waveguide layer grown on an Al0.7Ga0.3As layer and GaAs substrate. The patterning of the structure and the membrane release were achieved by using electron-beam lithography, reaction ion etching, inductively coupled plasma etching and selective wet etching. The micro-luminescence spectrum is recorded from the fabricated nanocavities, and it is found that some high-order cavity modes are clearly observed besides the lowest-order resonant mode is exhibited in spite of much high rate of nonradiative recombination. The variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed to improve the probability of achieving spectral coupling of a single QD to a cavity mode.

DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

Room temperature ionic liquid doped DNA network immobilized horseradish peroxidase biosensor for amperometric determination of hydrogen peroxide

A novel electrochemical H2O2 biosensor was constructed by embedding horseradish peroxide (HRP) in a 1-butyl-3-methylimidazolium tetrafluoroborate doped DNA network casting on a gold electrode. The HRP entrapped in the composite system displayed good electrocatalytic response to the reduction of H2O2. The composite system could provide both a biocompatible microenvironment for enzymes to keep their good bioactivity and an effective pathway of electron transfer between the redox center of enzymes, H2O2 and the electrode surface. Voltammetric and time-based amperometric techniques were applied to characterize the properties of the biosensor. The effects of pH and potential on the amperometric response to H2O2 were studied. The biosensor can achieve 95% of the steady-state current within 2 s response to H2O2. The detection limit of the biosensor was 3.5 mu M, and linear range was from 0.01 to 7.4 mM. Moreover, the biosensor exhibited good sensitivity and stability. The film can also be readily used as an immobilization matrix to entrap other enzymes to prepare other similar biosensors.