861 resultados para lateral bipolar junction transistor (BJT)
Resumo:
The equivalent circuit parameters for a pentacene organic field-effect transistor are determined from low frequency impedance measurements in the dark as well as under light illumination. The source-drain channel impedance parameters are obtained from Bode plot analysis and the deviations at low frequency are mainly due to the contact impedance. The charge accumulation at organic semiconductor-metal interface and dielectric-semiconductor interface is monitored from the response to light as an additional parameter to find out the contributions arising from photovoltaic and photoconductive effects. The shift in threshold voltage is due to the accumulation of photogenerated carriers under source-drain electrodes and at dielectric-semiconductor interface, and also this dominates the carrier transport. The charge carrier trapping at various interfaces and in the semiconductor is estimated from the dc and ac impedance measurements under illumination. (c) 2010 American Institute of Physics. doi: 10.1063/1.3517085]
Resumo:
In this paper, a physically based analytical quantum linear threshold voltage model for short channel quad gate MOSFETs is developed. The proposed model, which is suitable for circuit simulation, is based on the analytical solution of 3-D Poisson and 2-D Schrodinger equation. Proposed model is fully validated against the professional numerical device simulator for a wide range of device geometries and also used to analyze the effect of geometry variation on the threshold voltage.
Resumo:
In the mean, bipolar active regions are oriented nearly toroidally, according to Hale's polarity law, with a latitude-dependent tilt known as Joy's Law. The tilt angles of individual active regions deviate from this mean behavior and change over time. It has been found that on average the change is toward the mean angle at a rate characteristic of 4.37 days (Howard, 1996). We show that this orientational relaxation is consistent with the standard model of flux tube emergence from a deep dynamo layer. Under this scenario Joy's law results from the Coriolis effect on the rising flux tube (D'Silva and Choudhuri, 1993), and departures from it result from turbulent buffeting of the tubes (Longcope and Fisher, 1996). We show that relaxation toward Joy's angle occurs because the turbulent perturbations relax on shorter time scales than the perturbations from the Coriolis force. The turbulent perturbations relax more rapidly because they are localized to the topmost portion of the convection zone while the Coriolis perturbations are more widely distributed. If a fully-developed active region remains connected to the strong toroidal magnetic field at the base of the convection zone, its tilt will eventually disappear, leaving it aligned perfectly toroidally. On the other hand, if the flux becomes disconnected from the toroidal field the bipole will assume a tilt indicative of the location of disconnection. We compare models which are connected and disconnected from the toroidal field. Only those disconnected at points very deep in the convection zone a-re consistent with observed time scale of orientational relaxation.
Resumo:
In this paper, a finite-element model is developed in which the nonlinear soil behavior is represented by a hyperbolic relation for static load condition and modified hyperbolic relation, which includes both degradation and gap for a cyclic load condition. Although batter piles are subjected to lateral load, the soil resistance is also governed by axial load, which is incorporated by considering the P-Δ moment and geometric stiffness matrix. By adopting the developed numerical model, static and cyclic load analyses are performed adopting an incremental-iterative procedure where the pile is idealized as beam elements and the soil as elastoplastic spring elements. The proposed numerical model is validated with published laboratory and field pile test results under both static and cyclic load conditions. This paper highlights the importance of the degradation factor and its influence on the soil resistance-displacement (p-y) curve, number of cycles of loading, and cyclic load response.
Resumo:
Epitaxial LaNiO3 thin films have been grown on SrTiO3 and several other substrates by pulsed laser deposition. The films are observed to be metallic down to 15 K, and the temperature dependence of resistivity is similar to that of bulk LaNiO3. Epitaxial, c-axis oriented YBa2Cu3O7-x films with good superconducting properties have been grown on the LaNiO3 (100) films. I-V characteristics of the YBa2Cu3O7-x-LaNiO3 junction are linear, indicating ohmic contact between them.
Resumo:
A new configuration is proposed for high-power induction motor drives. The induction machine is provided with two three-phase stator windings with their axes in line. One winding is designed for higher voltage and is meant to handle the main (active) power. The second winding is designed for lower voltage and is meant to carry the excitation (reactive) power. The excitation winding is powered by an insulated-gate-bipolar-transistor-based voltage source inverter with an output filter. The power winding is fed by a load-commutated current source inverter. The commutation of thyristors in the load-commutated inverter (LCI) is achieved by injecting the required leading reactive power from the excitation inverter. The MMF harmonics due to the LCI current are also cancelled out by injecting a suitable compensating component from the excitation inverter, so that the electromagnetic torque of the machine is smooth. Results from a prototype drive are presented to demonstrate the concept.
Resumo:
During lightning strike to a tall grounded object (TGO), reflections of current waves are known to occur at either ends of the TGO. These reflection modify the channel current and hence, the lightning electromagnetic fields. This study aims to identify the possible contributing factors to reflection at a TGO-channel junction for the current waves ascending on the TGO. Possible sources of reflection identified are corona sheath and discontinuity of resistance and radius. For analyzing the contribution of corona sheath and discontinuity of resistance at the junction, a macroscopic physical model for the return stroke developed in our earlier work is employed. NEC-2D is used for assessing the contribution of abrupt change in radii at a TGO-channel junction. The wire-cage model adopted for the same is validated using laboratory experiments. Detailed investigation revealed the following. The main contributor for reflection at a TGO-channel junction is the difference between TGO and channel core radii. Also, the discontinuity of resistance at a TGO-channel junction can be of some relevance only for the first microsecond regime. Further, corona sheath does not play any significant role in the reflection.
Resumo:
Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (ION) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in ION compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.
Resumo:
This paper presents a robust fixed order H2controller design using strengthened discrete optimal projection equations, which approximate the first order necessary optimality condition. The novelty of this work is the application of the robust H2controller to a micro aerial vehicle named Sarika2 developed in house. The controller is designed in discrete domain for the lateral dynamics of Sarika2 in the presence of low frequency atmospheric turbulence (gust) and high frequency sensor noise. The design specification includes simultaneous stabilization, disturbance rejection and noise attenuation over the entire flight envelope of the vehicle. The resulting controller performance is comprehensively analyzed by means of simulation