Mechanism-based inhibition of CYP2C8 by gemfibrozil in humans : characterisation of time and dose relationships

Drug-drug interactions may cause serious, even fatal clinical consequences. Therefore, it is important to examine the interaction potential of new chemical entities early in drug development. Mechanism-based inhibition is a pharmacokinetic interaction type, which causes irreversible loss of enzyme activity and can therefore lead to unusually profound and long-lasting consequences. The in vitro in vivo extrapolation (IVIVE) of drug-drug interactions caused by mechanism-based inhibition is challenging. Consequently, many of these interactions have remained unrecognised for many years. The concomitant use of the fibrate-class lipid-lowering agent gemfibrozil increases the concentrations of some drugs and their effects markedly. Even fatal cases of rhabdomyolysis occurred in patients administering gemfibrozil and cerivastatin concomitantly. One of the main mechanisms behind this effect is the mechanism-based inhibition of the cytochrome P450 (CYP) 2C8 enzyme by a glucuronide metabolite of gemfibrozil leading to increased cerivastatin concentrations. Although the clinical use of gemfibrozil has clearly decreased during recent years, gemfibrozil is still needed in some special cases. To enable safe use of gemfibrozil concomitantly with other drugs, information concerning the time and dose relationships of CYP2C8 inhibition by gemfibrozil should be known. This work was carried out as four in vivo clinical drug-drug interaction studies to examine the time and dose relationships of the mechanism-based inhibitory effect of gemfibrozil on CYP2C8. The oral antidiabetic drug repaglinide was used as a probe drug for measuring CYP2C8 activity in healthy volunteers. In this work, mechanism-based inhibition of the CYP2C8 enzyme by gemfibrozil was found to occur rapidly in humans. The inhibitory effect developed to its maximum already when repaglinide was given 1-3 h after gemfibrozil intake. In addition, the inhibition was shown to abate slowly. A full recovery of CYP2C8 activity, as measured by repaglinide metabolism, was achieved 96 h after cessation of gemfibrozil treatment. The dose-dependency of the mechanism-based inhibition of CYP2C8 by gemfibrozil was shown for the first time in this work. CYP2C8 activity was halved by a single 30 mg dose of gemfibrozil or by twice daily administration of less than 30 mg of gemfibrozil. Furthermore, CYP2C8 activity was decreased over 90% by a single dose of 900 mg gemfibrozil or twice daily dosing of approximately 100 mg gemfibrozil. In addition, with the application of physiological models to the data obtained in the dose-dependency studies, the major role of mechanism-based inhibition of CYP2C8 in the interaction between gemfibrozil and repaglinide was confirmed. The results of this work enhance the proper use of gemfibrozil and the safety of patients. The information related to time-dependency of CYP2C8 inhibition by gemfibrozil may also give new insights in order to improve the IVIVE of the drug-drug interactions of new chemical entities. The information obtained by this work may be utilised also in the design of clinical drug-drug interaction studies in the future.

Chemical potential of oxygen for iron-rutile-ilmenite and iron-ilmenite-ulvospinel equilibria

The chemical potential of oxygen corresponding to the iron-rutile-ilmenite (IRI) and iron-ilmenite-ulvospinel (IIU) equilibria has been measured employing solid-state galvanic cells,$$Pt, Fe + TiO_2 + FeTiO_3 //(Y_2 O_3 ) ZrO_2 //Fe + FeO, Pt$$ and $${\text{Pt, Fe + FeTiO}}_{\text{3}} {\text{ + Fe}}_{\text{2}} {\text{TiO}}_{\text{4}} {\text{//(Y}}_{\text{2}} {\text{0}}_{\text{3}} {\text{) ZrO}}_{\text{2}} {\text{//Fe + FeO, Pt}}$$ in the temperature range of 875 to 1275 K and 900 to 1373 K, respectively. The cells are written such that the right-hand electrodes are positive. The electromotive force (emf) of both the cells was found to be reversible and to vary linearly with temperature over the entire range of measurement. The chemical potential of oxygen for IRI equilibrium is represented by Δμo2(IRI) = -550,724 - 29.445T + 20.374T InT(±210) J mol−1 (875 <-T<- 1184 K) = -620,260 + 369.593T - 27.716T lnT(±210) J mol−1 (1184 <-T<- 1275 K) and that for IIU equilibrium by Δμo2(IIU) = -501,800 - 49.035T + 20.374T lnT(±210) J mol−1 (900 <-T<- 1184 K) = -571,336 + 350.003T− 27.716T lnT(=−210) J mol-1 (1184 <-T<- 1373 K) The standard Gibbs energy changes for IRI and IIU equilibria have been deduced from the measured oxygen potentials. Since ilmenite contains small amounts of Ti³+ ions, a correction for the activity of FeTiO3 has been incorporated by assuming ideal mixing on each cation sublattice in the FeTiO3-Ti2O3 system. Similarly, the ulvospinel contains some Fe³+ ions and a correction for the activity of Fe2TiO4 has been included by modeling the Fe2TiO4-Fe3O4 system. The third-law analysis of the results obtained for IRI equilibrium gives ΔH 298 0 = -575 (±1.0) kJ mol-1 and for IIU equilibrium yields ΔH 298 0 = -523.7 (±0.7) kJ mol−1}. The present results suggest that Fe2+ and Ti4+ cations mix almost ideally on the octahedral site of spinel lattice in Fe2TiO4, giving rise to a configurational contribution of 2R In 2 (11.5256 J mol-1 K-1) to the entropy of Fe2TiO4.

Characteristics of Dynamic Recrystalization Domain in the Processing Map for Hot-Working of OFHC Coper

The constitutive flow behaviour of OFHC copper under working conditions is studied using hot compression in the temperature range 650 to 900-degrees-C and strain rate range 0.001 to 100 s-1. The variation of the efficiency of power dissipation given by [2m/(m + 1)] (where m is the strain rate sensitivity) with temperature and strain rate is represented in the form of a power dissipation map and interpreted on the basis of the Dynamic Materials Model. The map prominently exhibited a domain centered at 850-degrees-C and 100 s-1 with a peak efficiency of 35 %. On the basis of the correlation of variations of grain size, efficiency of power dissipation and hot workability with temperature, the domain is identified to represent dynamic recrystallization (DRX).

Phase Relations in the System Cu-Gd-O and Gibbs Energy of Formation of CuGd204

The phase relations in the system Cu-Gd-O have been determined at 1273 K by X-ray diffrac- tion, optical microscopy, and electron microprobe analysis of samples equilibrated in quartz ampules and in pure oxygen. Only one ternary compound, CuGd2O4, was found to be stable. The Gibbs free energy of formation of this compound has been measured using the solid-state cell Pt, Cu2O + CuGd2O4 + Gd2O3 // (Y2O3) ZrO2 // CuO + Cu2O, Pt in the temperature range of 900 to 1350 K. For the formation of CuGd2O4 from its binary component oxides, CuO (s) + Gd2O3 (s) → CuGd2O4 (s) ΔG° = 8230 - 11.2T (±50) J mol-1 Since the formation is endothermic, CuGd2O4 becomes thermodynamically unstable with respect to CuO and Gd2O3 below 735 K. When the oxygen partial pressure over CuGd2O4 is lowered, it decomposes according to the reaction 4CuGd2O4 (s) → 4Gd2O3 (s) + 2Cu2O (s) + O2 (g) for which the equilibrium oxygen potential is given by Δμo 2 = −227,970 + 143.2T (±500) J mol−1 An oxygen potential diagram for the system Cu-Gd-O at 1273 K is presented.

Processing map for hot working of stainless steel type AISI 316L

Processing and instability maps using a dynamic materials model have been developed for stainless steel type AISI 316L in the temperature range 600-1250-degrees-C and strain rate range 0.001-100 s-1 with a view to optimising its hot workability. Stainless steel type AISI 316L undergoes dynamic recrystallisation, with a peak efficiency of 35% at 1250-degrees-C and 0.05 s-1, which are the optimum parameters for hot working this material. The material undergoes dynamic recovery at 900-degrees-C and 0.001 s-1. The increase in the dynamic recrystallisation and dynamic recovery temperatures in comparison with stainless steel type AISI 304L is attributed to the presence of a backstress caused by the molybdenum additions. These results are in general agreement with those reported elsewhere on stainless steel type 316 deformed in hot extrusion and hot torsion. At temperatures < 850-degrees-C and strain rates > 10 s-1, the material exhibits flow localisation owing to adiabatic shear band formation, whereas at higher temperatures (> 850-degrees-C) and strain rates (> 10 s-1) mechanical twinning and wavy slip bands are observed. (C) 1993 The Institute of Materials.

Synthesis, characterization and photoluminescence properties of CaSiO3: Eu3+ red phosphor

CaSiO3:Eu3+ (1-5 mol%) red emitting phosphors have been synthesized by a low-temperature solution combustion method. The phosphors have been well characterized by powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and optical spectroscopy. PXRD patterns reveal monoclinic CaSiO3 phase can be obtained at 900 degrees C. The SEM micrographs show the crystallites with irregular shape, mostly angular. Upon 254 nm excitation, the phosphor show characteristic fluorescence D-5(0) -> F-7(J) (J = 0, 1, 2, 3, 4) of the Eu3+ ions. The electronic transition located at 614 nm corresponding to D-5(0) -> F-7(2) of Eu3+ ions, which is stronger than the magnetic dipole transition located at 593 nm corresponding to D-5(0) -> F-7(1) of Eu3+ ions. Different pathways involved in emission process have been studied. Concentration quenching has been observed for Eu3+ concentration >4 mol%. UV-visible absorption shows an intense band at 240 nm in undoped and 270 nm in Eu3+ doped CaSiO3 which is attributed to oxygen to silicon (O-Si) ligand-to-metal charge-transfer (LMCT) band in the SiO32- group. The optical energy band gap is widened with increase of Eu3+ ion dopant. (C) 2010 Elsevier B.V. All rights reserved.

Bearing capacity factors of circular foundations for a general c-phi soil using lower bound finite elements limit analysis

By using the lower bound limit analysis in conjunction with finite elements and linear programming, the bearing capacity factors due to cohesion, surcharge and unit weight, respectively, have been computed for a circular footing with different values of phi. The recent axisymmetric formulation proposed by the authors under phi = 0 condition, which is based on the concept that the magnitude of the hoop stress (sigma(theta)) remains closer to the least compressive normal stress (sigma(3)), is extended for a general c-phi soil. The computational results are found to compare quite well with the available numerical results from literature. It is expected that the study will be useful for solving various axisymmetric geotechnical stability problems. Copyright (C) 2010 John Wiley & Sons, Ltd.

Bi2W1–xCuxO6–x(0.7[less-than-or-eq]x[less-than-or-eq]0.8): a new oxide-ion conductor

Anion-deficient Aurivillius phases of the general formula, Bi2Wi-xCuxO6-2x, possessing orthorhombic/tetragonal Bi2WO6-like structures, have been synthesized by quenching the oxide melts. The tetragonal phase stabilized for the compositions 0.7 less-than-or-equal-to x less-than-or-equal-to 0.8 is a good oxide-ion conductor in the temperature range 500-900 K, the x = 0.7 composition exhibiting the highest conductivity in the series.

Characterization of coprecipitated ferroelectric Bi2 VO5·5

Fine powders of orthorhombic bismuth vandate (Bi2VO5.5) have been synthesized by coprecipitation method. Powder X-ray diffraction and electron microscopic techniques have been used to characterize these samples. The formation of the monophasic Bi2VO5.5 was confirmed. The compacted powders sintered at 1070 K have been characterized for their dielectric properties as a function of both temperature (300-900 K) and frequency (100 Hz-10 MHz) and found to be superior to those obtained by the conventional solid-state reaction route.

Microstructural control in hot working of IN-718 superalloy using processing map

The hot-working characteristics of IN-718 are studied in the temperature range 900 °C to 1200 °C and strain rate range 0.001 to 100 s−1 using hot compression tests. Processing maps for hot working are developed on the basis of the strain-rate sensitivity variations with temperature and strain rate and interpreted using a dynamic materials model. The map exhibits two domains of dynamic recrystallization (DRX): one occurring at 950 °C and 0.001 s−1 with an efficiency of power dissipation of 37 pct and the other at 1200 °C and 0.1 s−1 with an efficiency of 40 pct. Dynamic recrystallization in the former domain is nucleated by the δ(Ni3Nb) precipitates and results in fine-grained microstructure. In the high-temperature DRX domain, carbides dissolve in the matrix and make interstitial carbon atoms available for increasing the rate of dislocation generation for DRX nucleation. It is recommended that IN-718 may be hot-forged initially at 1200 °C and 0.1 s−1 and finish-forged at 950 °C and 0.001 s−1 so that fine-grained structure may be achieved. The available forging practice validates these results from processing maps. At temperatures lower than 1000 °C and strain rates higher than 1 s−1 the material exhibits adiabatic shear bands. Also, at temperatures higher than 1150°C and strain rates more than 1s−1, IN-718 exhibits intercrystalline cracking. Both these regimes may be avoided in hotworking IN-718.

High-temperature reactions of alkali and plagioclase feldspars with alkali and alkaline-earth chlorides-formation of celsian

High-temperature reactions (Ca 900-degrees-C) involving albite, K-feldspar or plagioclase and K, Ba-or K, Sr chlorides were experimentally studied. These experiments reveal that the reaction between K-exchanged albite, potash feldspar, or plagioclase and Ba-chloride/Ba-K chloride results in the formation of celsian by the breakdown of the starting feldspar structure above 800-degrees-C. Sr-feldspar does not form under similar conditions. A size-effect of the large M-site cation appears to be responsible for the formation of celsian. The reaction between K-feldspar and barium chloride may be used as a method for synthesizing celsian.

Spectroscopic Studies on Silver Selenide Thin Films

Silver selenide thin films of thickness between 80 nm and 160 nm were prepared by thermal evaporation technique at a high vacuum better than 2x10(-5)mbar on well cleaned glass substrates at a deposition rate of 0.2 nm/sec. Silver selenide thin films were polycrystalline with orthorhombic structure. Ellipsometric spectra of silver selenide thin films have been recorded in the wavelength range between 300 nm and 700 nm. Optical constants like refractive index, extinction coefficient, absorption coefficient, and optical band gap of silver selenide thin film have been calculated from the recorded spectra. The refractive index of silver selenide has been found to vary between 1.9 and 3.2 and the extinction coefficient varies from 0.5 to 1.6 with respect to their corresponding thickness of the films. Transmittance spectra of these films have been recorded in the wavelength range between 300 nm and 900 nm and its spectral data are analysed. The photoluminescence studies have been carried out on silver selenide thin films and the strong emission peak is found around 1.7 eV. The calculated optical band of thermally evaporated silver selenide thin films is found to be around 1.7 eV from their Ellipsometric, UV-Visible and Photoluminescence spectroscopic studies.

Microstructural control in hot working of IN-718 superalloy using processing map

The hot-working characteristics of IN-718 are studied in the temperature range 900 degrees C to 1200 degrees C and strain rate range 0.001 to 100 s(-1) using hot compression tests. Processing maps for hot working are developed on the basis of the strain-rate sensitivity variations with temperature and strain rate and interpreted using a dynamic materials model. The map exhibits two domains of dynamic recrystallization (DRX): one occurring at 950 degrees C and 0.001 s(-1) with an efficiency of power dissipation of 37 pct and the other at 1200 degrees C and 0.1 s(-1) with an efficiency of 40 pct. Dynamic recrystallization in the former domain is nucleated by the delta(Ni3Nb) precipitates and results in fine-grained microstructure. In the high-temperature DRX domain, carbides dissolve in the matrix and make interstitial carbon atoms available for increasing the rate of dislocation generation for DRX nucleation. It is recommended that IN-718 may be hot-forged initially at 1200 degrees C and 0.1 s(-1) and finish-forged at 950 degrees C and 0.001 s(-1) so that fine-grained structure may be achieved. The available forging practice validates these results from processing maps. At temperatures lower than 1000 degrees C and strain rates higher than 1 s(-1), the material exhibits adiabatic shear bands. Also, at temperatures higher than 1150 degrees C and strain rates more than 1 s(-1), IN-718 exhibits intercrystalline cracking. Both these regimes may be avoided in hot-working IN-718.

Processing of an α-2 aluminide alloy, Ti---24Al---11Nb

Compressive stress-strain curves have been generated over a range of temperatures (900-1100-degrees-C and strain rates (0.001-100 s-1) for two starting structures consisting of lath alpha2 and equiaxed alpha2 in a Ti-24Al-11Nb alloy. The data from these tests have been analysed in terms of a dynamic model for processing. The results define domains of strain rate and temperature in which dynamic recrystallization of alpha2 occurs for both starting structures. The rate controlling process for dynamic recrystallization is suggested to be cross-slip in the alpha2 phase. A region of processing instability has also been defined within which shear bands form in the lath structure. Recrystallization of the beta phase is shown to occur for different combinations of strain rate and temperature from those in which the alpha2 phase recrystallizes dynamically

Conductivity and structural studies on disordered amorphous conducting carbon films

Amorphous carbon films are prepared by the pyrolysis of Tetra Chloro Phthalic Anhydride (TCPA) at different temperatures (700 degrees C to 900 degrees C). DC Conductivity measurements are done on the films in the temperature range 300K to 4.2K. It shows an activated temperature dependence with a small activation energy (0.02eV to 0.003eV). Variable range hopping is observed at low temperatures. The films are characterised by XRD, SEM, TEM, AFM and microRaman. The electronic structure of the film is used to explain the electrical behaviour.